10-FY126TA050SH-L828F68 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;型号: | 10-FY126TA050SH-L828F68 |
厂家: | VINCOTECH |
描述: | Easy paralleling;High speed switching;Low switching losses |
文件: | 总18页 (文件大小:5622K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-FY126TA050SH-L828F68
datasheet
flowPACK 1
1200 V / 50 A
Features
flow 1 12 mm housing
● High speed IGBT4
● Tandem diodes for improved thermal performance
● Integrated thermal sensor
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-FY126TA050SH-L828F68
Copyright Vincotech
1
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
48
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
122
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1300
38
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
102
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
7,81
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
2
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0017
50
25
5,3
5,8
6,3
V
V
25
1,78
2,05
2,38
2,46
2,42(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
1
µA
nA
Ω
20
120
4
Cies
Cres
Qg
2770
160
380
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
0
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,78
K/W
25
92,2
94,6
96
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
20,2
24
tr
125
150
25
24,6
184,6
236,4
251,6
54,57
87
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
50
tf
125
150
25
ns
90,1
2,05
2,9
QrFWD=1,61 µC
QrFWD=3,04 µC
QrFWD=3,55 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
3,13
2,01
3,18
3,52
Eoff
125
150
Copyright Vincotech
3
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
3,23
3,09
3,03
3,84(1)
2,65
VF
IR
Forward voltage
50
125
150
V
Reverse leakage current
Thermal
Vr = 1300 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,93
K/W
25
32,13
39,68
43,22
108,64
148,68
166,83
1,61
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=2600 A/µs
di/dt=2009 A/µs
di/dt=3015 A/µs
Qr
Recovered charge
±15
600
50
125
150
25
3,04
μC
3,55
0,516
0,987
1,17
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1844
(dirf/dt)max
125
150
155,86
170,69
Copyright Vincotech
4
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
5
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
50
10
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,782
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,24E-01
3,94E-01
1,70E-01
6,32E-02
3,04E-02
9,17E-01
1,41E-01
4,90E-02
9,18E-03
9,28E-04
Copyright Vincotech
6
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
7
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
10
50
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,934
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,47E-02
1,44E-01
4,22E-01
2,08E-01
7,41E-02
3,12E-02
3,74E+00
5,45E-01
1,08E-01
2,56E-02
4,14E-03
4,84E-04
Copyright Vincotech
8
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
9
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Inverter Switching Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
10
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Inverter Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
tf
-1
10
-1
10
tr
tr
-2
10
-2
10
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
11
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Inverter Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
6
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
60
50
40
30
20
10
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
12
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Inverter Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4500
12000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 23.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
13
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Inverter Switching Definitions
figure 24.
IGBT
figure 25.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
14
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Inverter Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
15
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-FY126TA050SH-L828F68
10-FY126TA050SH-L828F68-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC-123
DC-123
G15
52,6
49,9
42,65
39,65
35,15
28,4
24
0
0
2
3
0
4
0
S15
5
0
Therm1
Therm2
G13
6
0
7
0
8
21
0
S13
9
12,2
9,2
0
G11
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
S11
2,7
0
DC-123
DC-123
DC+123
DC+123
Ph1
0
0
0
14,65
14,65
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
14,65
14,65
2,7
0
2,7
Ph1
5,4
Ph1
9,6
S12
12,6
19,6
22,3
25
G12
Ph2
Ph2
Ph2
29,7
32,7
39,7
42,7
47,2
49,9
52,6
52,6
49,9
S14
G14
S16
G16
Ph3
Ph3
Ph3
DC+123
DC+123
Copyright Vincotech
16
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Pinout
DC+123
13,14,30,31
D11-1
D11-2
D13-1
D15-1
D15-2
T12
T14
T16
G12
19
G14
24
D13-2
G16
26
S12
18
S14
23
S16
25
Ph1
15,16,17
Ph2
20,21,22
Ph3
27,28,29
D12-1
D12-2
D14-1
D14-2
D16-1
T11
T13
T15
G11
9
G13
7
G15
3
D16-2
Rt
S11
10
S13
8
S15
4
DC-123
5
6
1,2,11,12
Therm1
Therm2
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
50 A
50 A
Inverter Switch
T15, T16
D11, D12, D13, D14,
D15, D16
FWD
NTC
1300 V
Inverter Diode
Thermistor
Rt
Copyright Vincotech
17
08 Apr. 2021 / Revision 1
10-FY126TA050SH-L828F68
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FY126TA050SH-L828F68-D1-14
8 Apr. 2021
Initial Release
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
08 Apr. 2021 / Revision 1
相关型号:
10-FY12B2A032ME-L387L28
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up
VINCOTECH
10-FY12B2A036MR-L387L18
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH
10-FY12B2A040MR-L387L68
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH
10-FY12B2A040MR02-L387L63
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH
10-FY12PMA015M7-P587A78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
©2020 ICPDF网 联系我们和版权申明