10-FZ122PB100SC02-M819F08 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 10-FZ122PB100SC02-M819F08 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总16页 (文件大小：1727K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
flowPHASE 0 + NTC
1200 V / 100 A
Features
flow 0 housing
17 mm housing
solder pin /
Press-fit pin
● High efficiency IGBT4 half-bridge
● Full current FWD
● Thermistor
12 mm housing
solder pin /
Press-fit pin
Schematic
Target applications
● Industrial Drives
● Power Supply
● Solar Inverters
● UPS
● Welding & Cutting
Types
● 10-FZ122PB100SC02-M819F08
● 10-PZ122PB100SC02-M819F08Y
● 10-F0122PB100SC02-M819F09
● 10-P0122PB100SC02-M819F09Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Switch
VCES
IC
Collector-emitter voltage
1200
98
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
300
199
±20
10
A
W
V
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
1
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Half-Bridge Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
79
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
200
123
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
V
Visol
Isolation voltage
Creepage distance
Clearance
tp = 1 min
min. 12,7
9,12 / 9,54
min. 12,7
mm
12 mm housing solder pin / Press-fit pin
17 mm housing solder pin / Press-fit pin
mm
Copyright Vincotech
2
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0038 25
25
5,1
5,8
6,4
V
V
1,53
1,72
1,97
2,01
1,97
VCEsat
Collector-emitter saturation voltage
15
100
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
1,3
µA
nA
Ω
20
120
7,5
6300
270
Cies
Cres
Qg
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
800
nC
Thermal
λpaste=3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,48
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
25
125
171
184
33
37
293
365
60
121
6,905
10,138
6,265
9,373
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Rgon = 4 Ω
Rgoff = 4 Ω
ns
Turn-off delay time
Fall time
±15
600
100
Qr
Qr
= 9,1 μC
= 16,8 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
Copyright Vincotech
3
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Half-Bridge Diode
Static
25
1,77
1,75
1,73
2,05
18
VF
IR
125
150
Forward voltage
100
V
Reverse leakage current
1200
25
µA
Thermal
λpaste=3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,78
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
104
119
247
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
392
di/dt = 3987 A/μs
di/dt = 3060 A/μs
9,064
16,837
3,237
6,304
3017
1630
±15
600
100
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
4
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Half-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE
)
300
300
VGE
:
7 V
I
I
I
I
I
I
I
I
8 V
250
200
150
100
50
9 V
250
200
150
100
50
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
=
:
Tj
°C
VGE
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
100
I
I
I
I
80
60
40
20
0
Z
Z
Z
Z
10-1
10-2
10-3
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
0
2
4
6
8
10
12
VG E (V)
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
IGBT thermal model values
(K/W)
t
p / T
VCE
=
Tj:
=
0,48
K/W
R
τ
(s)
9,76E-02
1,99E-01
1,27E-01
3,20E-02
1,66E-02
4,53E-03
9,68E-01
1,64E-01
6,12E-02
1,05E-02
9,83E-04
3,89E-04
Copyright Vincotech
5
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Half-Bridge Switch Characteristics
figure 6.
IGBT
Safe operating area
I C = f(VCE
)
1000
1ms
10µs
100µs
10ms
I
I
I
I
100ms
DC
100
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
D =
single pulse
80 ºC
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
6
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Half-Bridge Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
300
)
= f( )
tp
I F
VF
Z th(j-s)
100
250
200
150
100
50
Z
Z
Z
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
=
0
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
VF (V)
=
250
μs
25 °C
125 °C
150 °C
/
tp
tp
D
T
:
Tj
R th(j-s)
0,78
K/W
FWD thermal model values
R (K/W)
τ (s)
3,30E-02
9,76E-02
3,59E-01
2,01E-01
5,37E-02
3,09E-02
5,07E+00
9,33E-01
1,37E-01
4,10E-02
6,38E-03
6,30E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
7
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(IC
)
25
20
E
E
E
E
E
E
E
E
Eon
20
15
10
5
Eon
15
10
5
Eoff
Eon
Eoff
Eoff
Eon
Eoff
0
0
0
20
40
60
80
100
120
140
160
180
200
0
2
4
6
8
10
12
14
16
18
R
g (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
25 °C
125 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
600
±15
4
V
V
Ω
Ω
VCE
VGE
IC
=
=
=
600
±15
100
V
V
A
125 °C
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(Ic)
Erec = f(R g)
8
10
E
E
E
E
E
E
E
E
Erec
8
6
4
2
0
6
4
2
0
Erec
Erec
Erec
0
2
4
6
8
10
12
14
16
18
0
20
40
60
80
100
120
140
160
180
IC (A)
200
R
g (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
600
±15
4
V
V
Ω
VCE
VGE
IC
=
=
=
600
±15
100
V
V
A
125 °C
125 °C
R gon
Copyright Vincotech
8
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
td(off)
t
t
t
t
t
t
t
t
td(off)
td(on)
td(on)
tf
tf
0,1
0,1
tr
tr
0,01
0,01
0
2
4
6
8
10
12
14
16
18
0
20
40
60
80
100
120
140
160
180
200
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj
VCE
=
=
=
=
=
125
600
±15
4
°C
V
Tj
VCE
VGE
I C
=
=
=
=
125
600
±15
100
°C
V
VGE
V
V
R gon
R goff
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
0,5
0,6
trr
trr
t
t
t
t
t
t
t
t
0,5
0,4
0,3
0,2
0,1
0
0,4
0,3
0,2
0,1
0
trr
trr
0
20
40
600
60
80
100
120
140
160
180
IC (A)
200
0
2
4
6
8
10
12
14
16
18
Rgon (Ω)
At
VCE
=
V
At
VCE
=
600
±15
100
V
V
A
25 °C
25 °C
125 °C
Tj:
Tj:
VGE
R gon
=
=
±15
4
V
VGE
I C
=
125 °C
Ω
=
Copyright Vincotech
9
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
25
20
Qr
Q
Q
Q
Q
Q
Q
Q
Q
Qr
20
15
10
5
15
10
5
Qr
Qr
0
0
0
20
40
60
80
100
120
140
160
180
IC (A)
200
0
2
4
6
8
10
12
14
16
18
Rg on (Ω)
At
VCE
VGE
R gon
=
600
±15
4
V
V
Ω
At
VCE
VGE
I C
=
600
±15
100
V
V
A
25 °C
25 °C
Tj:
Tj:
=
=
125 °C
125 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
160
160
IRM
I
I
I I
I I
I
I
120
80
40
0
120
80
40
0
IRM
IRM
IRM
0
2
4
6
8
10
12
14
16
18
Rgo n (Ω)
0
50
100
150
200
IC (A)
At
VCE
=
600
±15
4
V
V
Ω
At
VCE
=
600
±15
100
V
V
A
25 °C
125 °C
25 °C
125 °C
Tj:
Tj:
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
10
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
5000
5000
d
iF/d
t
t
d
iF/dt
t
t
t t
t t
t
t
d
i
r r/d
dirr/dt
i
i
i i
i i
i
i
4000
3000
2000
1000
0
4000
3000
2000
1000
0
0
5
10
15
20
Rgon (Ω)
0
20
40
600
60
80
100
120
140
160
180
200
IC (A)
At
VCE
=
V
25 °C
125 °C
At
VCE
VGE
I C
=
600
±15
100
V
V
A
25 °C
125 °C
±15
4
V
:
=
:
Tj
VGE
=
=
Tj
R gon
Ω
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
250
I
I
I
I
IC MAX
200
150
100
50
I
I
I
I
I
I
I
I
V
V
V
V
0
0
200
400
600
800
1000
1200
1400
C E (V)
V
At
Tj
=
=
=
125
°C
Ω
R gon
R goff
4
4
Ω
Copyright Vincotech
11
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Inverter Switching Definitions
General conditions
=
=
=
T j
125 °C
4 Ω
4 Ω
R gon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
V
V
GE (100%) =
C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
100
365
V
600
100
184
V
I
C (100%) =
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
C (100%) =
tf
600
100
121
V
VC (100%) =
I C (100%) =
600
100
37
V
I
A
A
=
ns
tr
=
ns
Copyright Vincotech
12
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Inverter Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr
=
integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t
(µs)
t
(µs)
VF (100%) =
600
100
119
392
V
I F (100%) =
Q r (100%) =
100
A
I
I
F (100%) =
A
16,84
μC
RRM (100%) =
A
trr
=
ns
Copyright Vincotech
13
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with Press-fit pins
with thermal paste 12 mm housing with Press-fit pins
without thermal paste 17 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
without thermal paste 17 mm housing with Press-fit pins
with thermal paste 17 mm housing with Press-fit pins
Ordering Code
10-FZ122PB100SC02-M819F08
10-FZ122PB100SC02-M819F08-/3/
10-PZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y-/3/
10-F0122PB100SC02-M819F09
10-F0122PB100SC02-M819F09-/3/
10-P0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
0
0
0
0
0
0
0
0
Y
Function
DC-
0
1
2
2,3
4,6
6,9
15,6
17,9
20,2
22,5
DC-
DC-
3
4
5
6
7
8
9
DC-
DC+
DC+
DC+
DC+
G12
13,85 16,45
16,75 16,45
10
11
12
13
14
S12
Ph
Ph
33,5
33,5
33,5
33,5
11,5
9,2
6,9
4,6
Ph
Ph
15
16
17
18
19
20
21
33,5
33,5
2,3
0
Ph
Ph
13,85 13,55
Ph
19,55
19,55
33,5
4,95
7,85
22,5
22,5
S11
G11
Therm1
Therm2
26,1
Copyright Vincotech
14
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12
IGBT
1200 V
100 A
100 A
Half-Bridge Switch
D11, D12
Rt
FWD
NTC
1200 V
Half-Bridge Diode
Thermistor
Copyright Vincotech
15
17 Aug. 2018 / Revision 1
10-FZ122PB100SC02-M819F08Y
10-PZ122PB100SC02-M819F08Y
10-F0122PB100SC02-M819F09Y
10-P0122PB100SC02-M819F09Y
datasheet
Packaging instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instruction
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ122PB100SC02-M819F0xx-D1-14
17 Aug. 2018
Initial release
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
16
17 Aug. 2018 / Revision 1
相关型号：
10-FZ122PB100SC03-M819F18
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-FZ124PA040F2-P629F38
5us short circuit withstand time;High speed switching;Minimized tail current
VINCOTECH
10-FZ126PA010M7-P867F78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-FZ126PA015M7-P868F78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-FZ126PA025M7-P869F78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-FZ126PA035M7-P860F78
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-FZ127PA008SC-L156E08
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-FZ127PA015SC-L158E08
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-FZ127PA025SC-L159E08
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current
VINCOTECH
10-FZ12B2A080MR04-P629L82
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode
VINCOTECH
10-FZ12NMA080F202-M260F48
5us short circuit withstand time;High speed switching;Minimized tail current
VINCOTECH
©2020 ICPDF网 联系我们和版权申明