10-FZ126PA025M7-P869F78 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 10-FZ126PA025M7-P869F78 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总17页 (文件大小：1565K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10ꢀFZ126PA025M7ꢀP869F78
datasheet
1200 V / 25 A
flow PACK 0
Features
flow 0 12 mm housing
● IGBT M7 with low
and improved EMC behavior
V CEsat
● Compact and low inductive design
● Builtꢀin NTC
Schematic
Target applications
● Industrial Drives
Types
● 10ꢀFZ126PA025M7ꢀP869F78
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collectorꢀemitter voltage
1200
34
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gateꢀemitter voltage
tp limited by Tjmax
Tj = Tjmax
50
A
82
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
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28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
33
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
50
A
Tj = Tjmax
62
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
ꢀ40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
ꢀ40…(Tjmax ꢀ 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
9,22
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gateꢀemitter threshold voltage
VGE = VCE
0,0025 25
25
5,4
6
6,6
V
V
1,65
1,89
1,95
1,95
VCEsat
Collectorꢀemitter saturation voltage
15
25
125
150
ICES
IGES
Cies
Coes
Cres
Qg
Collectorꢀemitter cutꢀoff current
Gateꢀemitter leakage current
Input capacitance
0
1200
0
25
25
70
µA
nA
20
500
4800
170
57
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
25
180
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,16
K/W
25
147
149
145
td(on)
125
150
25
Turnꢀon delay time
29
tr
Rise time
125
150
25
33
34
171
Rgoff = 16 ꢁ
Rgon = 16 ꢁ
ns
td(off)
Turnꢀoff delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
191
196
95
110
±15
600
25
tf
115
2,060
2,664
2,816
1,666
2,178
2,290
Qr
FWD
Qr
FWD
Qr
FWD
= 2,5 ꢂC
= 3,9 ꢂC
= 4,3 ꢂC
Eon
Turnꢀon energy (per pulse)
Turnꢀoff energy (per pulse)
mWs
Eoff
Copyright Vincotech
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28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
125
150
1,63
1,70
1,69
2,1
35
Forward voltage
VF
IR
25
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
Dynamic
Rth(j-s)
1,54
K/W
25
21
23
23
IRRM
125
150
25
Peak recovery current
A
254
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
367
404
ns
di/dt = 645 A/ꢂs
di/dt = 673 A/ꢂs ±15
di/dt = 633 A/ꢂs
2,543
3,878
4,279
0,885
1,448
1,610
217
600
25
Recovered charge
ꢂC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
134
132
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kꢁ
%
Deviation of R100
Power dissipation
Power dissipation constant
Bꢀvalue
R100 = 1484 ꢁ
ꢀ5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
Bꢀvalue
K
Vincotech NTC Reference
I
Copyright Vincotech
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28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
ꢂs
V
25 °C
125 °C
150 °C
tp
=
250
125
7 V to 17 V in steps of 1 V
ꢂs
VGE
=
Tj:
Tj =
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10ꢀ1
10ꢀ2
10ꢀ5
10ꢀ4
10ꢀ3
10ꢀ2
10ꢀ1
100
101
tp(s)
102
tp
=
100
10
ꢂs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,16
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
5,33Eꢀ02
1,07Eꢀ01
5,05Eꢀ01
2,68Eꢀ01
1,51Eꢀ01
7,80Eꢀ02
3,54E+00
5,75Eꢀ01
1,04Eꢀ01
3,30Eꢀ02
7,35Eꢀ03
6,52Eꢀ04
Copyright Vincotech
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10ꢀFZ126PA025M7ꢀP869F78
datasheet
Inverter Switch Characteristics
figure 6.
IGBT
Safe operating area
IC = f(VCE
)
I
I
I
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
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28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
10ꢀ1
10ꢀ2
10ꢀ4
=
10ꢀ3
10ꢀ2
10ꢀ1
100
101
102
tp
=
250
ꢂs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
1,54
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,69Eꢀ02
1,06Eꢀ01
5,57Eꢀ01
4,68Eꢀ01
2,35Eꢀ01
8,77Eꢀ02
4,01Eꢀ02
5,05E+00
7,09Eꢀ01
1,01Eꢀ01
3,22Eꢀ02
5,52Eꢀ03
1,01Eꢀ03
5,52Eꢀ04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T)
Copyright Vincotech
7
28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
16
V
V
ꢁ
ꢁ
T
j
:
VCE
VGE
I C
=
=
=
600
±15
25
V
V
A
Tj:
VCE
VGE
=
=
=
=
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
16
V
V
ꢁ
:
600
±15
25
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
8
28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
16
°C
V
150
600
±15
25
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
ꢁ
ꢁ
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
600
600
At
VCE
=
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
±15
16
:
Tj
VGE
I C
=
±15
25
:
Tj
VGE
R gon
=
=
=
Copyright Vincotech
9
28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
600
±15
16
V
V
ꢁ
25 °C
125 °C
150 °C
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
±15
25
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
600
±15
16
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
600
±15
25
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
10
28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
di
rr/dt
i
i
i
i
dir r
/dt
i
i
i
i
600
At
VCE
=
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
25
V
V
A
25 °C
125 °C
150 °C
±15
16
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
ꢁ
R gon
R goff
=
=
16
16
ꢁ
Copyright Vincotech
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28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Inverter Switching Definitions
General conditions
=
=
=
125 °C
16 ꢁ
T j
Rgon
R goff
16 ꢁ
figure 1.
IGBT
figure 2.
IGBT
Turnꢀoff Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turnꢀon Switching Waveforms & definition of tdon, tEon (tEon
=
integrating time for Eon)
tdoff
IC
VGE
VCE
IC
VGE
tEoff
VCE
tEon
ꢀ15
ꢀ15
15
V
V
VGE (0%) =
VGE (0%) =
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
600
25
V
600
25
V
A
A
0,191
0,826
ꢂs
ꢂs
0,149
0,504
ꢂs
ꢂs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turnꢀoff Switching Waveforms & definition of tf
Turnꢀon Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
600
25
V
600
25
V
VC (100%) =
C (100%) =
VC (100%) =
I C (100%) =
A
A
I
0,110
µs
0,033
µs
t f =
tr =
Copyright Vincotech
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28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turnꢀoff Switching Waveforms & definition of tEoff
Turnꢀon Switching Waveforms & definition of tEon
Eoff
Pon
Poff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
15,13
2,18
0,83
kW
mJ
ꢂs
P on (100%) =
Eon (100%) =
15,13
2,66
0,50
kW
mJ
ꢂs
t Eoff
=
tEon =
figure 7.
FWD
Turnꢀoff Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
25
V
A
ꢀ23
0,367
A
ꢂs
t rr
=
Copyright Vincotech
13
28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Inverter Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turnꢀon Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turnꢀon Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
Erec
IF
Qr
tErec
Prec
25
A
15,13
1,45
0,73
kW
mJ
ꢂs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
3,88
0,73
ꢂC
ꢂs
t Qr
=
tErec =
Copyright Vincotech
14
28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste 12 mm housing with solder pins
10ꢀFZ126PA025M7ꢀP869F78
Name
Text
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NNꢀNNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
NNꢀNNNNNNNNNNNNNNꢀTTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
0
0
0
0
0
0
0
0
0
Function
DCꢀ
33,3
30,7
27,9
23,85
21,05
15,95
9,6
2
S15
G15
3
4
S13
5
G13
6
Therm2
Therm1
G11
7
8
5,4
9
2,6
S11
10
11
12
13
0
0
0
DCꢀ
DC+
Ph1
Ph1
11,15
22,3
22,3
0
2,6
14
15
16
17
18
19
20
21
5,5
22,3
22,3
22,3
22,3
22,3
22,3
22,3
11,15
G12
G14
Ph2
Ph2
G16
Ph3
Ph3
DC+
13,1
15,9
19,4
27,7
30,7
33,3
33,3
Copyright Vincotech
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28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11ꢀT16
IGBT
1200 V
25 A
25 A
Inverter Switch
Inverter Diode
Thermistor
D11ꢀD16
Rt
FWD
NTC
1200 V
Copyright Vincotech
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28 Sep. 2017 / Revision 1
10ꢀFZ126PA025M7ꢀP869F78
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10ꢀFZ126PA025M7ꢀP869F78ꢀD1ꢀ14
28 Sep. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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28 Sep. 2017 / Revision 1
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10-FZ12NMA080F205-M260F53
5us short circuit withstand time;High speed switching;Minimized tail current
VINCOTECH
10-FZ12PMA005M7-P848A28
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
10-FZ12PMA005M701-P848A288
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
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