10-FZ12PMA005M701-P848A288 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 10-FZ12PMA005M701-P848A288 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总32页 (文件大小：1850K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FZ12PMA005M701-P848A288
datasheet
flowPIM 0
1200 V / 5 A
Features
flow 0 housing
● IGBT M7 with low VCEsat and improved EMC behavior
● Open emitter configuration
● Compact and low inductive design
● Builtin NTC
Schematic
Target applications
● Industrial Drives
Types
● 10-FZ12PMA005M701-P848A288
Maximum Ratings
Tjꢀ= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
1200
5
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150°C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
10
A
ꢀ
Tj = Tjmax
41
W
V
±20
9,5
175
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
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12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Maximum Ratings
Tjꢀ= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
5
V
A
ꢀ
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj limited by Tjmax
10
A
ꢀ
Tj = Tjmax
24
W
°C
Tjmax
Maximum junction temperature
175
Brake Switch
VCES
IC
Collector-emitter voltage
1200
5
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150°C
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
10
A
ꢀ
Tj = Tjmax
41
W
V
±20
9,5
175
Short circuit ratings
VGE = 15 V
Vcc = 800 V
µs
°C
Tjmax
Maximum junction temperature
Brake Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
5
V
A
ꢀ
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj limited by Tjmax
10
A
ꢀ
Tj = Tjmax
24
W
°C
Tjmax
Maximum junction temperature
175
Rectifier Diode
VRRM
IF
Peak repetitive reverse voltage
1600
35
V
A
A
ꢀ
Continuous (direct) forward current
Surge (non-repetitive) forward current
IFSM
270
50 Hz Single Half Sine Wave
Tj = 150 °C
Ts = 80 °C
tp = 10 ms
Surge current capability
370
A2s
I2t
ꢀ
Ptot
Total power dissipation
Tj = Tjmax
56
W
Tjmax
Maximum junction temperature
150
°C
Copyright Vincotech
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12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Maximum Ratings
Tjꢀ= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
9,29
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
> 200
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10-FZ12PMA005M701-P848A288
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tjꢀꢀ[°C]
VFꢀ [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
15
0,0005 25
25
5,4
6
6,6
V
V
1,62
1,83
1,89
1,95
VCEsat
Collector-emitter saturation voltage
5
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
20
µA
nA
Ω
20
500
none
1100
57
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
11
15
600
5
40
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j‐s)
Thermal resistance junction to sink
2,30
K/W
Dynamic
25
153
149
147
39
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
43
43
Rgon = 64 Ω
Rgoff = 64 Ω
ns
154
176
181
89
115
111
0,480
0,601
0,643
0,333
0,440
td(off)
Turn-off delay time
Fall time
±15
600
5
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 0,6 μC
= 0,9 μC
= 1 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
0,473
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tjꢀꢀ[°C]
VFꢀ [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,57
1,65
1,65
2,1
20
VF
IR
125
150
Forward voltage
5
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j‐s)
Thermal resistance junction to sink
3,50
K/W
Dynamic
25
4
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
4
4
Peak recovery current
A
259
387
434
0,551
0,873
0,985
0,186
0,330
0,378
46
trr
Reverse recovery time
ns
di/dt = 83 A/μs
di/dt = 99 A/μs
di/dt = 92 A/μs
Qr
Recovered charge
±15
600
5
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
ꢀ
125
150
25
25
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tjꢀꢀ[°C]
VFꢀ [V] IF [A]
Min
Max
Brake Switch
Static
VGE(th)
Gate-emitter threshold voltage
10
15
0,0005 25
25
5,4
6
6,6
V
V
1,62
1,83
1,89
1,95
VCEsat
Collector-emitter saturation voltage
5
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
20
µA
nA
Ω
20
500
none
1100
57
Cies
Coes
Cres
Qg
Output capacitance
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
11
15
600
5
40
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j‐s)
Thermal resistance junction to sink
2,30
K/W
Dynamic
25
79
73
72
td(on)
125
150
25
Turn-on delay time
45
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
48
49
Rgoff = 64 Ω
Rgon = 64 Ω
ns
234
262
270
101
114
117
0,480
0,609
0,634
0,345
0,454
0,474
td(off)
Turn-off delay time
Fall time
15/0
600
5
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 0,6 μC
= 0,8 μC
= 0,9 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
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10-FZ12PMA005M701-P848A288
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tjꢀꢀ[°C]
VFꢀ [V] IF [A]
Min
Max
Brake Diode
Static
25
1,57
1,65
1,65
2,1
20
VF
IR
125
150
Forward voltage
5
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j‐s)
Thermal resistance junction to sink
3,50
K/W
Dynamic
25
4
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
4
4
Peak recovery current
A
259
386
431
0,558
0,833
0,935
0,200
0,314
0,363
37
trr
Reverse recovery time
ns
di/dt = 85 A/μs
di/dt = 102 A/μs
di/dt = 87 A/μs
Qr
15/0
600
5
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
ꢀ
125
150
24
20
Rectifier Diode
Static
25
1,17
1,13
VF
IR
Forward voltage
Reverse leakage current
Thermal
35
V
125
1600
25
50
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j‐s)
Thermal resistance junction to sink
1,25
K/W
Copyright Vincotech
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10-FZ12PMA005M701-P848A288
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tjꢀꢀ[°C]
VFꢀ [V] IF [A]
Min
Max
Thermistor
R
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Δ
R/Rꢀ
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
P
5
mW
mW/K
K
1,5
B(25/50)
ꢀ
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
ꢀ
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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10-FZ12PMA005M701-P848A288
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
= f(
15
)
VCE
= f(
15
)
VCE
IC
IC
VGEꢀ
:
7 V
I
I
8 V
9 V
12
9
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
12
9
6
6
3
3
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)
VC E (V)
=
250
15
μs
25 °C
125 °C
150 °C
=
=
250
150
μs
°C
tp
tp
Tj
=
V
:
Tj
VGE
from
7 V to 17 V in steps of 1 V
VGE
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j‐s) = f(tp)
101
5
I
4
Z
100
3
2
1
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
4
8
12
16
VGEꢀ(V)
=
100
10
μs
25 °C
125 °C
150 °C
=
D
tp
tpꢀ/ꢀT
=
V
:
Tj
=
R th(j‐s)
2,30
K/W
VCE
IGBT thermal model values
(K/W)
R
τ
(s)
6,25E-02
1,37E-01
7,38E-01
5,28E-01
3,84E-01
2,39E-01
2,13E-01
3,48E+00
5,00E-01
8,11E-02
2,49E-02
5,54E-03
1,24E-03
3,29E-04
Copyright Vincotech
9
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
I
100ms
1ms
10µs
DC
10ms
100µs
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
=
single pulse
80
D
Ts
=
ºC
V
=
±15
VGE
Tjꢀ=
Tjmax
Copyright Vincotech
10
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
15
)
= f( )
tp
IF
VF
Z th(j‐s)
101
12
9
Z
100
6
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
3
10-2
0
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j‐s)
3,50
K/W
FWD thermal model values
(K/W)
Rꢀ
τ (s)
8,03E-02
2,34E-01
1,33E+00
7,92E-01
5,71E-01
4,85E-01
7,23E+00
4,70E-01
6,36E-02
2,24E-02
3,34E-03
7,05E-04
Copyright Vincotech
11
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
= f(
15
)
VCE
= f(
15
)
VCE
IC
IC
VGEꢀ
:
7 V
I
I
8 V
9 V
12
9
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
12
9
6
6
3
3
0
0
0
1
2
3
4
5
0
1
2
3
4
5
VC E (V)
VC E (V)
=
250
15
μs
25 °C
125 °C
150 °C
=
=
250
150
μs
°C
tp
tp
Tj
=
V
:
Tj
VGE
from
7 V to 17 V in steps of 1 V
VGE
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j‐s) = f(tp)
101
5
I
4
Z
100
3
2
1
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
4
8
12
16
VGEꢀ(V)
=
100
10
μs
25 °C
125 °C
150 °C
=
D
tp
t
pꢀ/ꢀ
2,30
IGBT thermal model values
(K/W)
T
=
V
:
Tj
=
R th(j‐s)
K/W
VCE
R
τ (s)
6,25E-02
1,37E-01
7,38E-01
5,28E-01
3,84E-01
2,39E-01
2,13E-01
3,48E+00
5,00E-01
8,11E-02
2,49E-02
5,54E-03
1,24E-03
3,29E-04
Copyright Vincotech
12
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
I
100ms
1ms
10µs
DC
10ms
100µs
10
1
0,1
0,01
1
10
100
1000
10000
VC E (V)
=
single pulse
80
D
Ts
=
ºC
V
=
±15
VGE
jꢀ
T
=
Tjmax
Copyright Vincotech
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12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
15
)
= f( )
tp
IF
VF
Z th(j‐s)
101
12
9
Z
100
6
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
3
10-2
0
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j‐s)
2,76
K/W
FWD thermal model values
Rꢀ (K/W)
τ
(s)
6,58E-02
1,43E-01
6,08E-01
8,65E-01
7,08E-01
3,69E-01
4,81E+00
3,47E-01
4,61E-02
1,40E-02
2,91E-03
5,42E-04
Copyright Vincotech
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10-FZ12PMA005M701-P848A288
datasheet
Rectifier Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
= f(
80
)
= f( )
tp
IF
VF
Z th(j‐s)
101
70
60
50
40
30
20
10
0
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
VF (V)
tp
=
250
μs
25 °C
125 °C
D =
tp / T
1,25
Tj:
R th(j‐s)
K/W
FWD thermal model values
(K/W)
Rꢀ
τ
(s)
8,00E-02
1,56E-01
6,95E-01
2,23E-01
9,97E-02
5,22E+00
4,18E-01
8,82E-02
3,07E-02
5,99E-03
Copyright Vincotech
15
12 Jul. 2018 / Revision 1
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datasheet
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
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12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
Eꢀ=ꢀf(R g
)
Eꢀ=ꢀf(IC
)
2
1,6
ꢀ
ꢀ
ꢀ
ꢀ
Eon
1,5
1,2
0,8
0,4
0
Eonꢀ
Eon
Eon
Eonꢀ
Eonꢀ
1
Eoff
Eoffꢀ
Eoff
Eoffꢀ
0,5
Eoffꢀ
Eoff
0
0
2
4
6
8
10
0
60
120
180
240
300
RgꢀꢁΩꢂ
IC ꢀꢀꢁAꢂ
With an inductive load at
25 °C
With an inductive load at
25 °C
ꢀ
ꢀ
VCE
VGEꢀ
R gonꢀ
=
=
=
600
±15
64
V
V
Ω
Ω
Tj:
VCE
=
600
±15
5
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGEꢀ=
ICꢀ=
R
goffꢀ=
64
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erecꢀ=ꢀf(Ic)
Erecꢀ=ꢀf(R g)
0,5
0,4
0,3
0,2
0,1
0
0,6
Erec
Erecꢀ
ꢀ
ꢀ
0,5
0,4
0,3
0,2
0,1
0
Erec
Erec
Erecꢀ
Erec
0
60
120
180
240
300
RgꢀꢁΩꢂ
0
2
4
6
8
10
IC ꢀꢁAꢂ
With an inductive load at
25 °C
With an inductive load at
25 °C
ꢀ
VCE
VGEꢀ
R gonꢀ
=
=
=
600
±15
64
V
V
Ω
Tj:
VCEꢀ=
VGEꢀ=
ICꢀ=
600
±15
5
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
Copyright Vincotech
17
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
tꢀ=ꢀf(IC
)
tꢀ=ꢀf(R g)
1
1
td(on)
td(off)
td(off)
ꢀ
ꢀ
td(on)
tr
0,1
0,1
tf
tf
tr
0,01
0,01
0,001
0,001
0
60
120
180
240
300
0
2
4
6
8
10
RgꢀꢁΩꢂ
IC ꢀꢁAꢂ
With an inductive load at
With an inductive load at
Tjꢀ=ꢀ
150
600
±15
64
°C
V
Tjꢀ=ꢀ
150
600
±15
5
°C
V
ꢀ
ꢀ
VCE
=
=
=
VCE
=
VGEꢀ
V
VGEꢀ=
V
R gonꢀ
Ω
Ω
ICꢀ=
A
R
goffꢀ=
64
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trrꢀ=ꢀf(IC
)
trrꢀ=ꢀf(R gon)
0,6
0,8
trr
trrꢀ
ꢀ
ꢀ
0,5
trr
0,6
0,4
0,3
0,2
0,1
0
trrꢀ
trrꢀ
0,4
0,2
trrꢀ
0
0
0
2
4
6
8
10
60
120
180
240
300
IC ꢁAꢂ
RgonꢀꢀꢁΩꢂ
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
=
=
=
600
±15
64
V
V
Ω
Tj:
VCEꢀ=
VGEꢀ=
ICꢀ=
600
±15
5
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGEꢀ
R gonꢀ
Copyright Vincotech
18
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qrꢀ=ꢀf(IC
)
Qrꢀ=ꢀf(R gon)
1,6
1,2
Q
Q
Qr
Qrꢀ
Qr
1,2
0,9
Qrꢀ
0,8
0,4
0,6
0,3
Qrꢀ
Qr
0
0
0
0
2
4
6
8
10
60
120
180
240
300
RgonꢀꢀꢁΩꢂ
IC ꢀꢁAꢂ
With an inductive load at
25 °C
With an inductive load at
25 °C
VCEꢀ
=
=
=
600
±15
64
V
V
Ω
Tj:
VCE
VGEꢀ=
IC
=
600
±15
5
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGEꢀ
R gonꢀ
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRMꢀ=ꢀf(IC
)
IRMꢀ=ꢀf(R gon)
5
10
IRM
I
I
IRM
4
8
IRMꢀ
6
4
2
3
2
1
IRM
IRM
IRM
0
0
0
0
60
120
180
240
300
Rgo nꢀꢀꢁΩꢂ
2
4
6
8
10
IC ꢀꢁAꢂ
With an inductive load at
25 °C
With an inductive load at
25 °C
VCEꢀ
=
=
=
600
±15
64
V
V
Ω
Tj:
VCEꢀ
VGEꢀ=
ICꢀ
=
600
±15
5
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGEꢀ
R gonꢀ
=
Copyright Vincotech
19
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,ꢀdi rr/dtꢀ=ꢀf(IC
)
di F/dt,ꢀdi rr/dtꢀ=ꢀf(R gon)
400
160
d
iF/dt
d
iF/
/
dt
ꢀ
i
t
i
dirr/dt
dirr
dt
300
200
100
120
80
40
0
0
0
0
60
120
180
240
300
RgonꢀꢁΩꢂ
2
4
6
8
10
ICꢀꢁAꢂ
With an inductive load at
25 °C
With an inductive load at
25 °C
VCEꢀ
=
=
=
600
±15
64
V
V
Ω
Tj:
VCEꢀ
VGEꢀ=
IC
=
600
±15
5
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGEꢀ
R gonꢀ
=
figure 15.
IGBT
Reverse bias safe operating area
ICꢀ=ꢀf(VCE
)
12
I
ICꢀMAX
10
I
8
6
4
2
0
I
V
0
200
400
600
800
1000
1200
1400
VC EꢀꢁVꢂ
At
Tjꢀ=
gonꢀ=
goffꢀ=
125
°C
Ω
R
R
64
64
Ω
Copyright Vincotech
20
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Inverter Switching Definitions
General conditions
=
=
=
T jꢀ
125 °C
64 Ω
64 Ω
Rgonꢀ
Rgoffꢀ
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGEꢀ90%
VCEꢀ90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCEꢀ3%
VCE
ICꢀ10%
VGEꢀ10%
tEon
t ꢁµsꢂ
t ꢁµsꢂ
VGEꢀ(0%)ꢀ=
-15
15
V
VGEꢀ(0%)ꢀ=
-15
V
VGEꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
tdoffꢀ=
V
VGEꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
tdonꢀ=
15
V
600
5
V
600
5
V
A
A
176
ns
149
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
ICꢀ90%
ICꢀ60%
ICꢀ40%
VCE
ICꢀ90%
tr
IC10%
VCE
ICꢀ10%
tf
t ꢁµsꢂ
t ꢁµsꢂ
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
600
5
V
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
600
5
V
A
A
tfꢀ=
115
ns
trꢀ
=
43
ns
Copyright Vincotech
21
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Inverter Switching Definitions
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t ꢁµsꢂ
t ꢁµsꢂ
VFꢀ(100%)ꢀ=
Fꢀ(100%)ꢀ=
IRRMꢀ(100%)ꢀ=
rrꢀ=
600
5
V
IFꢀ(100%)ꢀ=
Qrꢀ(100%)ꢀ=
5
A
I
A
0,87
μC
4
A
t
387
ns
Copyright Vincotech
22
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Brake Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
Eꢀ=ꢀf(R g
)
Eꢀ=ꢀf(IC
)
2
1,6
ꢀ
ꢀ
ꢀ
ꢀ
Eon
Eonꢀ
1,5
1,2
0,8
0,4
0
Eon
Eon
Eonꢀ
Eonꢀ
1
Eoff
Eoffꢀ
Eoffꢀ
Eoff
Eoffꢀ
0,5
Eoff
0
0
2
4
6
8
10
0
50
100
150
200
25 °C
250
300
RgꢀꢁΩꢂ
IC ꢀꢀꢁAꢂ
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
ꢀ
:
ꢀ
VCE
=
=
=
600
15/0
64
V
V
Ω
Ω
T
j
VCE
=
600
15/0
5
V
V
A
Tj:
125 °C
150 °C
VGEꢀ
VGEꢀ=
R gonꢀ
ICꢀ=
R goffꢀ=
64
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erecꢀ=ꢀf(Ic)
Erecꢀ=ꢀf(R g)
0,5
0,4
0,3
0,2
0,1
0
0,6
ꢀ
Erec
Erecꢀ
ꢀ
0,5
0,4
0,3
0,2
0,1
0
Erec
Erec
Erecꢀ
Erec
0
50
100
150
200
250
300
RgꢀꢁΩꢂ
0
2
4
6
8
10
IC ꢀꢁAꢂ
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
ꢀ
:
VCE
=
=
=
600
15/0
64
V
V
Ω
Tj:
VCEꢀ=
VGEꢀ=
ICꢀ=
600
15/0
5
V
V
A
Tj
VGEꢀ
R gonꢀ
Copyright Vincotech
23
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
tꢀ=ꢀf(IC
)
tꢀ=ꢀf(R g)
1
1
td(off)
td(on)
tr
ꢀ
ꢀ
td(off)
tf
td(on)
tr
0,1
0,1
tf
0,01
0,01
0,001
0,001
0
32
64
96
128
160
192
224
256
288
RgꢀꢁΩꢂ
0
2
4
6
8
10
IC ꢀꢁAꢂ
With an inductive load at
With an inductive load at
Tjꢀ=ꢀ
150
600
15/0
64
°C
V
Tjꢀ=ꢀ
150
600
15/0
5
°C
V
ꢀ
ꢀ
VCE
=
=
=
VCE
=
VGEꢀ
V
VGEꢀ=
V
R gonꢀ
Ω
Ω
ICꢀ=
A
R goffꢀ=
64
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trrꢀ=ꢀf(IC
)
trrꢀ=ꢀf(R gon)
0,6
0,8
trr
trrꢀ
ꢀ
ꢀ
0,5
trr
trrꢀ
0,6
0,4
0,3
0,2
0,1
0
trrꢀ
0,4
0,2
trrꢀ
0
0
0
2
4
6
8
10
50
100
150
200
25 °C
250
300
IC ꢁAꢂ
RgonꢀꢀꢁΩꢂ
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCE
=
600
V
V
Ω
25 °C
125 °C
150 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
600
15/0
5
V
V
A
15/0
64
:
VGEꢀ
ICꢀ
=
:
Tj
125 °C
150 °C
VGEꢀ
=
Tj
R gonꢀ
=
=
Copyright Vincotech
24
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Brake Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qrꢀ=ꢀf(IC
)
Qrꢀ=ꢀf(R gon)
1,6
1,2
Q
Q
Qr
Qrꢀ
1,2
0,9
Qr
Qrꢀ
Qrꢀ
0,8
0,4
0,6
0,3
Qr
0
0
0
0
2
4
6
8
10
50
600
100
150
200
25 °C
250
300
RgonꢀꢀꢁΩꢂ
IC ꢀꢁAꢂ
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
600
15/0
64
V
V
Ω
25 °C
125 °C
150 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCE
GEꢀ=
IC=
=
V
V
A
:
15/0
5
:
Tj
125 °C
150 °C
VGEꢀ
=
V
Tj
R gonꢀ
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRMꢀ=ꢀf(IC
)
IRMꢀ=ꢀf(R gon)
5
8
IRM
I
I
4
IRM
6
IRMꢀ
3
2
1
4
2
IRM
IRM
IRM
0
0
0
0
50
100
150
200
25 °C
250
300
Rgo nꢀꢀꢁΩꢂ
2
4
6
8
10
IC ꢀꢁAꢂ
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
600
15/0
64
V
V
Ω
25 °C
125 °C
150 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
VGEꢀ=
ICꢀ
=
600
15/0
5
V
V
A
:
:
Tj
125 °C
150 °C
VGEꢀ
=
Tj
R gonꢀ
=
=
Copyright Vincotech
25
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Brake Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,ꢀdi rr/dtꢀ=ꢀf(IC
)
di F/dt,ꢀdi rr/dtꢀ=ꢀf(R gon)
375
125
d
iF/dt
d
iF/
dt
ꢀ
i
t
dirr/dt
dirr
/
d
t
i
300
100
75
50
25
0
225
150
75
0
0
50
100
150
200
250
300
RgonꢀꢁΩꢂ
0
2
4
6
8
10
ICꢀꢁAꢂ
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
=
600
V
V
Ω
25 °C
125 °C
150 °C
AtꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀꢀVCEꢀ
GEꢀ=
IC
=
600
15/0
5
V
V
A
25 °C
125 °C
150 °C
15/0
64
:
Tj
V
:
Tj
VGEꢀ=
R gonꢀ
=
=
figure 15.
IGBT
Reverse bias safe operating area
ICꢀ=ꢀf(VCE
)
12
ICꢀMAX
I
10
I
8
6
4
2
0
I
V
0
200
400
600
800
1000
1200
1400
VC EꢀꢁVꢂ
At
Tjꢀ=
175
°C
Ω
R
gonꢀ=
64
64
R goffꢀ=
Ω
Copyright Vincotech
26
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Brake Switching Definitions
General conditions
=
=
=
T jꢀ
Rgonꢀ
125 °C
64 Ω
Rgoffꢀ
64 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
125
200
tdoff
IC
%
%
100
150
VCEꢀ90%
VGEꢀ90%
75
50
25
0
VCE
100
IC
VGE
VGE
tdon
tEoff
50
IC 1%
VCEꢀ3%
VGEꢀ10%
ICꢀ10%
VCE
0
tEon
-25
-0,2
-50
0
0,2
0,4
0,6
0,8
1
3,9
4
4,1
4,2
4,3
4,4
4,5
t ꢁµsꢂ
t ꢁµsꢂ
VGEꢀ(0%)ꢀ=
GEꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
0
V
VGEꢀ(0%)ꢀ=
VGEꢀ(100%)ꢀ=
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
tdonꢀ=
0
V
V
15
V
15
V
600
5
V
600
V
I
t
Cꢀ(100%)ꢀ=
doffꢀ=
A
5
A
0,262
0,874
μs
μs
0,073
0,467
μs
μs
tEoffꢀ=
tEonꢀ
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
125
200
fitted
%
%
IC
100
150
ICꢀ90%
IC
75
50
25
0
VCE
100
50
0
ICꢀ60%
ICꢀ90%
tr
ICꢀ40%
VCE
IC10%
ICꢀ10%
tf
-25
-50
0
0,1
0,2
0,3
0,4
0,5
4
4,05
4,1
4,15
4,2
4,25
4,3
t ꢁµsꢂ
t ꢁµsꢂ
600
5
V
600
5
V
VCꢀ(100%)ꢀ=
Cꢀ(100%)ꢀ=
tfꢀ
VCꢀ(100%)ꢀ=
ICꢀ(100%)ꢀ=
A
A
I
0,114
μs
0,048
μs
=
trꢀ=
Copyright Vincotech
27
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
125
200
%
%
ICꢀ1%
Pon
100
150
100
50
Eoff
Poff
75
Eon
50
25
VCEꢀ3%
VGEꢀ10%
VGEꢀ90%
tEon
0
0
tEoff
-25
-50
-0,2
0
0,2
0,4
0,6
0,8
1
3,9
4
4,1
4,2
4,3
4,4
4,5
t ꢁµsꢂ
t ꢁµsꢂ
Poffꢀ(100%)ꢀ=
3,03
0,45
0,87
kW
mJ
μs
Ponꢀ(100%)ꢀ=
Eonꢀ(100%)ꢀ=
3,03
0,61
0,47
kW
mJ
μs
E
offꢀ(100%)ꢀ=
tEoffꢀ=
tEonꢀ=
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
150
%
IF
100
trr
50
VF
0
IRRM 10%
fitted
-50
IRRM 90%
IRRM 100%
-100
4
4,1
4,2
4,3
4,4
4,5
4,6
t ꢁµsꢂ
VFꢀ(100%)ꢀ=
600
5
V
I
I
t
Fꢀ(100%)ꢀ=
RRMꢀ(100%)ꢀ=
rrꢀ=
A
-4
A
0,386
μs
Copyright Vincotech
28
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
125
150
%
%
Erec
Qr
100
75
50
25
0
100
tErec
tQr
50
IF
0
Prec
-50
-100
-25
4
4,25
4,5
4,75
5
5,25
4
4,2
4,4
4,6
4,8
5
5,2
t ꢁµsꢂ
t ꢁµsꢂ
IFꢀ(100%)ꢀ=
5
A
Precꢀ(100%)ꢀ=
Erecꢀ(100%)ꢀ=
tErecꢀ=
3,03
kW
Q
rꢀ(100%)ꢀ=
0,83
1,00
μC
μs
0,31
1,00
mJ
tQrꢀ
=
μs
Copyright Vincotech
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12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste
10-FZ12PMA005M701-P848A288
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
2,7
0
Function
Therm1
25,5
25,5
22,8
20,1
16,2
13,5
10,8
8,1
1
2
Therm2
DC-Rect
G27
3
4
5
6
7
8
0
0
0
DC-Br
G15
0
0
DC-3
G13
0
9
5,4
2,7
0
0
0
0
DC-2
G11
DC-1
G12
Ph1
10
11
12
13
14
15
0
0
19,8
22,5
19,8
22,5
7,5
7,5
G14
Ph2
16
17
18
19
20
21
22
23
15
19,8
22,5
22,5
22,5
22,5
15
G16
Ph3
15
22,8
25,5
33,5
33,5
33,5
33,5
DC+Inv
DC+Rect
Br
ACIn1
ACIn2
ACIn3
7,5
0
Copyright Vincotech
30
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13, T14,
T15, T16
D11, D12, D13, D14,
IGBT
1200 V
5 A
Inverter Switch
FWD
IGBT
1200 V
1200 V
1200 V
1600 V
5 A
5 A
Inverter Diode
Brake Switch
Brake Diode
Rectifier Diode
NTC
D15, D16
T27
D27
FWD
5 A
D31, D32, D33, D34,
D35, D36
Rectifier
Thermistor
35 A
Rt
Copyright Vincotech
31
12 Jul. 2018 / Revision 1
10-FZ12PMA005M701-P848A288
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 2 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-FZ12PMA005M701-P848A288-D1-14
12 Jul. 2018
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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12 Jul. 2018 / Revision 1
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