10-P006PPA010SB04-M683B30Y [VINCOTECH]
Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching;型号: | 10-P006PPA010SB04-M683B30Y |
厂家: | VINCOTECH |
描述: | Highest efficiency in hard switching and resonant topologies;Lowest switching losses;Optimized for ultra-fast switching |
文件: | 总32页 (文件大小:9764K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-P006PPA010SB04-M683B30Y
datasheet
flowPIM 0 + PFC
600 V / 10 A
Features
flow 0 17 mm housing
● Clip in PCB mounting
● Trench Fieldstop IGBT's for low saturation losses
● High speed IGBT in the PFC circuit
● Integrated NTC
Schematic
Target applications
● Embedded Drives
● Industrial Drives
Types
● 10-P006PPA010SB04-M683B30Y
Copyright Vincotech
1
11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
14
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
30
A
Ptot
44
W
V
VGES
Gate-emitter voltage
±20
6
tSC
Short circuit ratings
VGE = 15 V, VCC = 360 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
14
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
20
A
Ptot
32
W
°C
Tjmax
Maximum junction temperature
175
PFC Switch
VCES
Collector-emitter voltage
650
30
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
90
A
Ptot
71
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Diode
VRRM
Peak repetitive reverse voltage
650
28
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
47
W
°C
Tjmax
Maximum junction temperature
175
PFC Sw. Inverse Diode
VRRM
Peak repetitive reverse voltage
650
8
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
12
36
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
33
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
200
200
44
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Shunt
I
DC current
Tc = 70 °C
Tc = 70 °C
22
5
A
Ptot
Top
Power dissipation
W
°C
Operation Temperature
-55 ... 170
Copyright Vincotech
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10-P006PPA010SB04-M683B30Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Capacitor (PFC)
VMAX
Maximum DC voltage
500
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,00015 25
5
5,8
6,5
V
V
25
10
1,1
1,59
1,78
1,9(1)
15
0
125
600
0
25
25
0,6
µA
nA
Ω
20
300
None
551
40
Cies
pF
pF
pF
Coes
Cres
Output capacitance
f = 1 Mhz
0
25
25
Reverse transfer capacitance
17
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,15
K/W
25
75,2
74,4
td(on)
Turn-on delay time
Rise time
ns
ns
125
25
23,8
tr
125
25
25,8
Rgon = 32 Ω
Rgoff = 32 Ω
136
td(off)
Turn-off delay time
Fall time
ns
125
25
158,8
83,29
123,18
0,277
0,376
0,33
±15
400
10
tf
ns
125
25
QrFWD=0,466 µC
QrFWD=0,896 µC
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
mWs
125
25
125
0,449
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10-P006PPA010SB04-M683B30Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,58
1,52
1,95(1)
27
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,99
K/W
25
5,13
6,56
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
125
25
193,87
269,56
0,466
0,896
0,132
0,255
21,2
trr
ns
125
25
di/dt=400 A/µs
di/dt=467 A/µs
Qr
±15
400
10
μC
125
25
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
125
25
(dirf/dt)max
125
64,56
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datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0003
30
25
3,3
4
4,7
V
25
1,97
2,25
2,22(1)
15
0
V
125
650
0
25
25
40
µA
nA
Ω
20
120
None
2100
45
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
7,7
VCC = 520 V
15
30
65
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,34
K/W
25
18,08
17,6
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
18,56
7,2
tr
125
150
25
8,48
8,8
Rgon = 8 Ω
Rgoff = 8 Ω
86,72
104,16
108,8
1,89
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
400
30
tf
125
150
25
3,49
ns
6,23
QrFWD=0,351 µC
QrFWD=0,731 µC
QrFWD=0,865 µC
0,179
0,279
0,301
0,188
0,298
0,325
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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10-P006PPA010SB04-M683B30Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,74
1,74
2,22(1)
1,6
VF
IR
Forward voltage
Reverse leakage current
30
V
125
Vr = 650 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
2,02
K/W
25
30,69
39,38
42,06
18,88
31,18
35,06
0,351
0,731
0,865
0,107
0,2
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3505 A/µs
di/dt=3215 A/µs
di/dt=3136 A/µs
Qr
Recovered charge
0/15
400
30
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
0,256
3437
2114
2125
(dirf/dt)max
125
150
Copyright Vincotech
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10-P006PPA010SB04-M683B30Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
PFC Sw. Inverse Diode
Static
25
1,23
1,72
1,58
1,53
1,87(1)
VF
IR
Forward voltage
6
125
150
V
Reverse leakage current
Vr = 650 V
25
0,1
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,65
K/W
Rectifier Diode
Static
25
1,22
1,2
VF
IR
Forward voltage
25
V
125
Reverse leakage current
Vr = 1600 V
25
50
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,59
K/W
Shunt
Static
R
Resistance
10
mΩ
%
Tolerance
-1
1
Temperature coeficient
tc
30
ppm/K
Copyright Vincotech
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (PFC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
100
2,5
nF
%
%
Tolerance
-10
10
Dissipation factor
f = 1 kHz
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
30
30
VGE
:
7 V
8 V
25
20
15
10
5
25
20
15
10
5
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0
0
0
1
2
3
4
5
1
2
3
4
5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
10,0
10
0
7,5
5,0
2,5
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0,0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
2,149
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,04E-01
2,88E-01
6,99E-01
4,91E-01
3,07E-01
2,60E-01
1,37E+00
2,01E-01
5,27E-02
1,22E-02
2,97E-03
3,80E-04
Copyright Vincotech
11
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10-P006PPA010SB04-M683B30Y
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
100
10µs
10
1
100µs
1ms
10ms
0,1
0,01
100ms
DC
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,988
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,74E-02
2,41E-01
1,22E+00
6,89E-01
4,52E-01
2,99E-01
5,59E+00
4,60E-01
6,53E-02
2,20E-02
5,14E-03
1,11E-03
Copyright Vincotech
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datasheet
PFC Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
80
80
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
60
40
20
60
40
20
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
30
10
25
20
15
10
5
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,344
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,09E-01
4,65E-01
4,65E-01
2,22E-01
8,42E-02
8,15E-01
1,08E-01
3,70E-02
6,76E-03
1,24E-03
Copyright Vincotech
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datasheet
PFC Switch Characteristics
figure 12.
IGBT
figure 13.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
100
17,5
15,0
12,5
10,0
7,5
10
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
10
20
30
40
50
60
70
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
30
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
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datasheet
PFC Diode Characteristics
figure 14.
FWD
figure 15.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,024
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,68E-02
2,45E-01
1,12E+00
3,96E-01
1,72E-01
3,48E+00
3,50E-01
6,11E-02
9,10E-03
1,24E-03
Copyright Vincotech
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datasheet
PFC Sw. Inverse Diode Characteristics
figure 16.
FWD
figure 17.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
17,5
15,0
12,5
10,0
7,5
10
0
10
-1
10
0,5
0,2
0,1
5,0
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,646
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,02E-01
3,50E-01
9,53E-01
7,66E-01
4,76E-01
2,56E+00
1,72E-01
3,96E-02
5,83E-03
9,87E-04
Copyright Vincotech
17
11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Rectifier Diode Characteristics
figure 18.
Rectifier
figure 19.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,594
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,44E-02
1,12E-01
5,81E-01
4,89E-01
2,38E-01
1,22E-01
1,81E-02
9,66E+00
1,22E+00
1,45E-01
5,05E-02
9,26E-03
1,79E-03
7,88E-04
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Thermistor Characteristics
figure 20.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Inverter Switching Characteristics
figure 21.
IGBT
figure 22.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,0
0,8
0,6
0,4
0,2
0,0
Eon
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eoff
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
Ω
125 °C
400
±15
10
V
V
A
125 °C
Rgon
Rgoff
32
figure 23.
FWD
figure 24.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
125 °C
400
±15
10
V
V
A
125 °C
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Inverter Switching Characteristics
figure 25.
IGBT
figure 26.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
tf
-1
10
tr
td(off)
tf
td(on)
-1
10
-2
10
tr
-2
10
-3
10
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
125
400
±15
32
°C
V
125
400
±15
10
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
32
figure 27.
FWD
figure 28.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
R
gon(Ω)
25 °C
125 °C
With an inductive load at
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
125 °C
400
±15
10
V
V
A
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datasheet
Inverter Switching Characteristics
figure 29.
FWD
figure 30.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
0
25
50
75
100
125
150
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
125 °C
400
±15
10
V
V
A
125 °C
figure 31.
FWD
figure 32.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
8
7
6
5
4
3
2
1
0
20,0
17,5
15,0
12,5
10,0
7,5
IRM
IRM
5,0
IRM
IRM
2,5
0,0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
125 °C
400
±15
10
V
V
A
125 °C
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Inverter Switching Characteristics
figure 33.
FWD
figure 34.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
600
1750
1500
1250
1000
750
500
250
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
500
400
300
200
100
0
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
20,0
IC(A)
0
25
50
75
100
125
150
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
Tj:
Tj:
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
±15
32
V
V
Ω
125 °C
400
±15
10
V
V
A
125 °C
figure 35.
IGBT
Reverse bias safe operating area
IC = f(VCE
22,5
)
IC MAX
20,0
17,5
15,0
12,5
10,0
7,5
5,0
2,5
0,0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
125
32
°C
Rgon
Rgoff
=
=
Ω
Ω
32
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
PFC Switching Characteristics
figure 36.
IGBT
figure 37.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eoff
Eon
Eoff
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eoff
0
10
20
30
40
50
60
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
Ω
125 °C
150 °C
400
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 38.
FWD
figure 39.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
PFC Switching Characteristics
figure 40.
IGBT
figure 41.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-2
10
-3
10
td(off)
-1
10
-2
10
-3
10
td(on)
td(on)
tr
tf
tr
tf
0
10
20
30
40
50
60
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
8
°C
V
150
400
0/15
30
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 42.
FWD
figure 43.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,045
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
PFC Switching Characteristics
figure 44.
FWD
figure 45.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,2
1,0
0,8
0,6
0,4
0,2
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 46.
FWD
figure 47.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
60
50
40
30
20
10
0
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
PFC Switching Characteristics
figure 48.
FWD
figure 49.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
20000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
17500
15000
12500
10000
7500
5000
2500
0
dirr/dt ──────
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
8
V
V
Ω
125 °C
150 °C
400
0/15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 50.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
70
IC MAX
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
8
8
Ω
Ω
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Switching Definitions
figure 51.
IGBT
figure 52.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 53.
IGBT
figure 54.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Switching Definitions
figure 55.
FWD
figure 56.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
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11 Nov. 2020 / Revision 1
10-P006PPA010SB04-M683B30Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-P006PPA010SB04-M683B30Y
10-P006PPA010SB04-M683B30Y-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
DC-Rect
DC-SH
S2SH2
S1SH2
DC-PFC
G27
33,5
30,7
28
0
0
2
3
0
4
25,3
22,6
19,9
17,2
13,5
10,8
8,1
5,4
2,7
0
0
5
0
6
0
7
0
S27
8
0
G11
9
0
DC-1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
0
G13
0
DC-2
0
G15
0
DC-3
0
8,6
11,45
19,8
22,5
19,8
22,5
19,8
22,5
22,5
22,5
22,5
22,5
15
Therm1
Therm2
G16
0
0
0
Ph3
6
G14
6
Ph2
12
G12
12
Ph1
17,7
20,5
26,5
33,5
33,5
33,5
DC+INV
DC+PFC
PFC
DC+Rect
ACIn1
ACIn2
7,5
Copyright Vincotech
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10-P006PPA010SB04-M683B30Y
datasheet
Pinout
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
600 V
10 A
Inverter Switch
T15, T16
D11, D12, D13, D14,
FWD
600 V
10 A
Inverter Diode
D15, D16
T27
IGBT
FWD
650 V
650 V
650 V
1600 V
30 A
30 A
6 A
PFC Switch
PFC Diode
D27
D47
FWD
PFC Sw. Inverse Diode
Rectifier Diode
Shunt
D31, D32, D33, D34
Rectifier
Shunt
25 A
SH2
C27
Rt
Capacitor
Thermistor
500 V
Capacitor (PFC)
Thermistor
Copyright Vincotech
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10-P006PPA010SB04-M683B30Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-P006PPA010SB04-M683B30Y-D1-14
11 Nov. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
11 Nov. 2020 / Revision 1
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