10-P106PPA050SJ-PD54B09Y [VINCOTECH]
5us short circuit withstand time;High speed switching;Low EMI;Short tail current;
| 型号： | 10-P106PPA050SJ-PD54B09Y |
| 厂家： | 
VINCOTECH |
| 描述： | 5us short circuit withstand time;High speed switching;Low EMI;Short tail current |
| 文件： | 总32页 (文件大小：8749K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-P106PPA050SJ-PD54B09Y
datasheet
flowPIM 1 + PFC
600 V / 50 A
Topology features
flow 1 17 mm housing
● Open Emitter configuration
● Temperature sensor
● On-board Capacitors
● Converter + 2-leg interleaved PFC + Inverter
● 2x Shunts
Component features
● 5us short circuit withstand time
● High speed switching
● Low EMI
● Short tail current
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● Embedded Drives
● Heat Pumps
● HVAC
● Industrial Drives
Types
● 10-P106PPA050SJ-PD54B09Y
Copyright Vincotech
1
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
600
48
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
79
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
5
tSC
Short circuit ratings
VGE = 15 V, VCC = 400 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
600
33
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
60
A
Ptot
52
W
°C
Tjmax
Maximum junction temperature
175
PFC Switch
VCES
Collector-emitter voltage
650
41
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
120
73
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
PFC Diode
VRRM
Peak repetitive reverse voltage
600
55
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
120
480
76
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
PFC Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
650
V
A
(1)
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts <= 80 °C
Ts = 80 °C
20
IFRM
tp limited by Tjmax
Tj = Tjmax
20
33
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
(1)
limited by IFRM
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
86
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
890
3960
91
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
PFC Shunt
I
DC current
31,6
2
A
Ptot
Top
Power dissipation
Tc = 70 °C
W
°C
Operation Temperature
-65 ... 170
Copyright Vincotech
3
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Capacitor (PFC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 150
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
>12.7mm
7.82mm
≥ 600
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
4
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0008
50
25
4,1
5,1
5,7
V
V
25
1,49
1,61
1,64
1,8(2)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
600
0
25
25
2,8
µA
nA
Ω
20
100
None
1950
83
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
67
VCC = 480 V
15
50
249
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(3)
Dynamic
1,2
K/W
Rth(j-s)
25
70
td(on)
Turn-on delay time
Rise time
125
150
25
70
ns
ns
71,2
45,2
43,2
42,8
114,8
133,6
138,6
22,47
34,2
41,12
1,84
2,2
tr
125
150
25
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
50
tf
125
150
25
ns
QrFWD=1,62 µC
QrFWD=3,09 µC
QrFWD=3,57 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
2,28
0,536
0,839
0,941
Eoff
125
150
Copyright Vincotech
5
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
1,25
1,64
1,55
1,95(2)
27
VF
IR
Forward voltage
30
V
150
Reverse leakage current
Vr = 600 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(3)
Dynamic
1,81
K/W
Rth(j-s)
25
10,63
16,09
16,77
251,47
331,66
392,82
1,62
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=245 A/µs
di/dt=545 A/µs
di/dt=378 A/µs
Qr
Recovered charge
±15
350
50
125
150
25
3,09
μC
3,57
0,406
0,762
0,892
76,03
88,46
100,72
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
6
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0004
40
25
3,3
4
4,7
V
V
25
1,54
1,69
1,74
2,22(2)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
80
µA
nA
Ω
20
240
None
2400
60
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
10
VCC = 520 V
15
40
96
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(3)
Dynamic
1,3
K/W
Rth(j-s)
25
14,85
14,55
14,29
8,26
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
9,49
9,93
Rgon = 4 Ω
Rgoff = 4 Ω
68,26
81,94
85,21
4,89
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
400
50
tf
125
150
25
11,54
16,52
0,434
0,676
0,765
0,307
0,471
0,527
ns
QrFWD=0,759 µC
QrFWD=2,06 µC
QrFWD=2,6 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
7
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
PFC Diode
Static
25
1,89
1,57
1,5
2,5(2)
VF
IR
Forward voltage
60
125
150
V
Reverse leakage current
Thermal
Vr = 600 V
25
25
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(3)
Dynamic
1,25
K/W
Rth(j-s)
25
57,46
98,57
112,75
24,63
35
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
38,46
0,759
2,06
di/dt=4573 A/µs
di/dt=4683 A/µs
di/dt=4623 A/µs
Qr
Recovered charge
0/15
400
50
125
150
25
μC
2,6
0,165
0,514
0,659
5595,29
6038,91
6707,51
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
8
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
PFC Sw. Protection Diode
Static
25
1,23
1,67
1,54
1,87(2)
0,14
VF
IR
Forward voltage
10
V
125
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(3)
2,87
K/W
Rth(j-s)
Rectifier Diode
Static
25
1,04
0,973
0,956
1,5(2)
VF
IR
Forward voltage
60
125
150
25
V
100
2
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(3)
0,77
K/W
Rth(j-s)
PFC Shunt
Static
R
Resistance
2
mΩ
Temperature coeficient
tc
275
ppm/K
Copyright Vincotech
9
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (PFC)
Static
DC bias voltage =
0 V
C
Capacitance
Tolerance
25
33
nF
%
-5
5
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(2)
Value at chip level
(3)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
125
VGE
:
7 V
8 V
125
100
75
50
25
0
9 V
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
=
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
50
10
0
40
30
20
10
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,195
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,02E-02
1,93E-01
7,24E-01
1,54E-01
5,44E-02
2,29E+00
3,20E-01
6,54E-02
8,99E-03
9,23E-04
Copyright Vincotech
11
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,811
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
8,35E-02
2,01E-01
7,60E-01
4,22E-01
2,13E-01
1,40E-01
4,59E+00
4,81E-01
9,25E-02
1,80E-02
3,31E-03
3,46E-04
Copyright Vincotech
13
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
PFC Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
125
100
VGE
:
7 V
8 V
9 V
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
=
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
40
10
0
10
30
20
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,299
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,67E-02
1,78E-01
7,37E-01
1,98E-01
1,09E-01
2,84E+00
3,36E-01
7,35E-02
9,72E-03
1,65E-03
Copyright Vincotech
14
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
PFC Switch Characteristics
figure 12.
IGBT
figure 13.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
20
40
60
80
100
120
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
20
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
15
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
PFC Diode Characteristics
figure 14.
FWD
figure 15.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
175
150
125
100
75
10
0
10
-1
10
0,5
0,2
0,1
50
-2
10
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,254
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,51E-02
1,82E-01
6,95E-01
2,01E-01
1,12E-01
3,13E+00
4,53E-01
8,72E-02
1,20E-02
1,13E-03
Copyright Vincotech
16
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
PFC Sw. Protection Diode Characteristics
figure 16.
FWD
figure 17.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,873
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
6,53E-02
1,48E-01
1,31E+00
7,32E-01
4,04E-01
2,11E-01
3,94E+00
4,48E-01
5,96E-02
1,36E-02
2,79E-03
5,37E-04
Copyright Vincotech
17
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Rectifier Diode Characteristics
figure 18.
Rectifier
figure 19.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
175
150
125
100
75
10
-1
10
-2
10
0,5
50
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
25
-4
0
0,00
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,25
0,50
0,75
1,00
1,25
1,50
10
10
10
10
VF(V)
tp(s)
tp
=
250
μs
D =
tp / T
0,772
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
2,82E-02
1,16E-01
4,16E-01
1,62E-01
5,02E-02
8,69E+00
1,22E+00
1,44E-01
2,97E-02
2,64E-03
Copyright Vincotech
18
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Thermistor Characteristics
figure 20.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
19
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Inverter Switching Characteristics
figure 21.
IGBT
figure 22.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 23.
FWD
figure 24.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
20
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Inverter Switching Characteristics
figure 25.
IGBT
figure 26.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
-1
10
tr
td(on)
tr
tf
-1
10
-2
10
tf
-3
10
-2
10
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
8
°C
V
150
350
±15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 27.
FWD
figure 28.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Inverter Switching Characteristics
figure 29.
FWD
figure 30.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
6
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 31.
FWD
figure 32.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
5,0
IRM
2,5
0,0
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Inverter Switching Characteristics
figure 33.
FWD
figure 34.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
2250
4000
3500
3000
2500
2000
1500
1000
500
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
2000
dirr/dt ──────
1750
1500
1250
1000
750
500
250
0
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 35.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
100
200
300
400
500
600
700
V
CE(V)
Tj =
At
150
8
°C
Rgon
Rgoff
=
=
Ω
Ω
8
Copyright Vincotech
23
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
PFC Switching Characteristics
figure 36.
IGBT
figure 37.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0
20
40
60
80
100
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 38.
FWD
figure 39.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,25
1,00
0,75
0,50
0,25
0,00
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
24
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
PFC Switching Characteristics
figure 40.
IGBT
figure 41.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
tf
tr
tf
tr
td(on)
-2
10
-2
10
-3
10
-3
10
0
20
40
60
80
100
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
0/15
4
°C
V
150
400
0/15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 42.
FWD
figure 43.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
25
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
PFC Switching Characteristics
figure 44.
FWD
figure 45.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 46.
FWD
figure 47.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
150
125
100
75
IRM
IRM
IRM
IRM
IRM
50
50
IRM
25
25
0
0
0,0
0
20
40
60
80
100
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
26
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
PFC Switching Characteristics
figure 48.
FWD
figure 49.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
80000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
70000
60000
50000
40000
30000
20000
10000
0
dirr/dt ──────
0
20
40
60
80
100
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
0/15
4
V
V
Ω
125 °C
150 °C
400
0/15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 50.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
90
IC MAX
80
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
4
4
Ω
Ω
Copyright Vincotech
27
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Switching Definitions
figure 51.
IGBT
figure 52.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 53.
IGBT
figure 54.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
28
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Switching Definitions
figure 55.
FWD
figure 56.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
29
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-P106PPA050SJ-PD54B09Y
10-P106PPA050SJ-PD54B09Y-/7/
10-P106PPA050SJ-PD54B09Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
not assembled
not assembled
2
3
45,5
42,8
38,5
38,5
38,5
31,8
31,8
25,1
23,1
22,1
19,1
19,1
15
0
0
DC-Rect
4
DC-Rect
PFC-
5
0
6
3
S1sh2
S2sh2
PFC+
PFC+
S1sh3
S2sh3
PFC-
7
6
8
1,2
3,9
1,9
4,9
0
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
0
Therm1
Therm2
G11
3
0
12
0
DC-1
G13
9
0
6
0
DC-2
G15
3
0
0
0
DC-3
DC+Inv
DC+Inv
G16
0
15,15
17,85
25,5
28,5
25,5
28,5
25,5
28,5
16,3
19,3
28,5
28,5
19,3
19,3
28,5
28,5
28,5
28,5
17,2
14,45
0
0
0
Ph3
7,7
G14
7,7
Ph2
15,4
15,4
21,7
21,7
23,4
31,1
32,9
35,9
39,1
41,8
49,8
52,5
44,3
44,3
G12
Ph1
G27
S27
PFC2
PFC1
G25
S25
DC+Rect
DC+Rect
ACIn1
ACIn1
ACIn2
ACIn2
Copyright Vincotech
30
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Pinout
35,36
8,9
PFC+
21,22
DC+Rect
DC+Inv
D25
D27
PFC1
PFC2
31
32
T12
T14
T16
D11
G14
D13
G16
D15
D32
D34
G12
27
25
23
Ph1
Ph2
37,38
39,40
C25
C27
28
26
ACIn1
ACIn2
T25
33
T27
Ph3
24
29
30
D31
D33
G25
S25
D47
D45
G27
S27
T11
T13
T15
D12
G13
D14
G15
D16
34
G11
15
17
19
S2sh2
S2sh3
11
7
SH2
SH3
DC-Rect
3,4
6
10
S1sh3
DC-1
16
DC-2
18
DC-3
20
S1sh2
Rt
PFC-
5,12
Therm1
13
Therm2
14
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
600 V
600 V
50 A
Inverter Switch
Inverter Diode
T15, T16
D11, D12, D13, D14,
D15, D16
FWD
30 A
T25, T27
IGBT
FWD
650 V
600 V
650 V
1600 V
40 A
60 A
10 A
60 A
PFC Switch
PFC Diode
D25, D27
D45, D47
FWD
PFC Sw. Protection Diode
Rectifier Diode
PFC Shunt
D31, D32, D33, D34
SH2, SH3
Rectifier
Shunt
C25, C27
Capacitor
Thermistor
630 V
Capacitor (PFC)
Thermistor
Rt
Copyright Vincotech
31
02 May. 2023 / Revision 3
10-P106PPA050SJ-PD54B09Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-P106PPA050SJ-PD54B09Y-D3-14
2 May. 2023
PFC Switch changed
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
02 May. 2023 / Revision 3
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