10-PD074PA075SM-L625F07Y [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-PD074PA075SM-L625F07Y |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总19页 (文件大小：6859K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PD074PA075SM-L625F07Y
datasheet
fastPACK 0 H C
650 V / 75 A
Features
flow 0 17 mm housing
● High speed H-Bridge
● High efficiency IGBT H5
● Full current fast FWD
● Integrated capacitors
● Thermistor
Schematic
Target applications
● Power Supply
● Welding & Cutting
Types
● 10-PD074PA075SM-L625F07Y
Copyright Vincotech
1
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
H-Bridge Switch
VCES
Collector-emitter voltage
650
53
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
225
90
A
Ptot
W
V
VGES
±20
175
Tjmax
Maximum junction temperature
°C
H-Bridge Diode
VRRM
Peak repetitive reverse voltage
650
55
V
A
IF
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
150
71
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
0 ... 125
°C
Copyright Vincotech
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26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
min. 12,7
min. 12,7
≥ 600
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
H-Bridge Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00075 25
25
3,3
4
4,7
V
V
1,67
1,84
1,89
2,22(1)
VCEsat
Collector-emitter saturation voltage
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
40
µA
nA
Ω
20
25
120
None
4300
75
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
16
VCC = 520 V
15
75
166
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,06
K/W
25
49
td(on)
Turn-on delay time
Rise time
125
150
25
49,2
49,2
9,8
ns
ns
tr
125
150
25
12,4
13,4
66,6
78,6
82
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
75
4,97
7,23
8,48
0,644
0,982
1,08
0,269
0,524
0,596
tf
125
150
25
ns
QrFWD=2,53 µC
QrFWD=4,54 µC
QrFWD=5,21 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
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26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
H-Bridge Diode
Static
25
1,53
1,49
1,46
1,92(1)
VF
IR
Forward voltage
75
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
3,8
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,34
K/W
25
90,26
110,59
117,11
51,24
82,54
93,03
2,53
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=7979 A/µs
di/dt=6480 A/µs
di/dt=6720 A/µs
Qr
Recovered charge
±15
350
75
125
150
25
4,54
μC
5,21
0,578
1,07
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,24
3574
2005
2114
(dirf/dt)max
125
150
Copyright Vincotech
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26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Capacitor (DC)
Static
C
Capacitance
150
nF
%
Tolerance
-10
10
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
6
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
H-Bridge Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
200
200
VGE
:
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
150
100
50
150
100
50
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 9 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
70
10
60
50
40
30
20
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
D =
tp / T
1,057
25 °C
V
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,05E-01
2,95E-01
4,07E-01
1,50E-01
3,75E-02
6,12E-02
8,62E-01
1,39E-01
4,84E-02
1,04E-02
2,37E-03
2,88E-04
7
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
H-Bridge Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
8
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
H-Bridge Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
200
150
100
50
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,336
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,84E-02
1,57E-01
5,86E-01
3,27E-01
1,27E-01
8,12E-02
3,64E+00
5,25E-01
1,06E-01
2,57E-02
4,84E-03
4,11E-04
9
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
Thermistor Characteristics
figure 15.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
10
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
H-Bridge Switching Characteristics
figure 16.
IGBT
figure 17.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
25
50
75
100
125
150
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
Ω
125 °C
150 °C
350
±15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 18.
FWD
figure 19.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
11
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
H-Bridge Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
td(off)
td(on)
0
10
-1
10
-1
10
td(off)
td(on)
tr
tf
-2
10
tr
tf
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
2
°C
V
150
350
±15
75
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 22.
FWD
figure 23.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
12
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
H-Bridge Switching Characteristics
figure 24.
FWD
figure 25.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 26.
FWD
figure 27.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
13
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
H-Bridge Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
12000
12000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
10000
8000
6000
4000
2000
0
0
25
50
75
100
125
150
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 30.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
14
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
Switching Definitions
figure 46.
IGBT
figure 47.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
15
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
Switching Definitions
figure 50.
FWD
figure 51.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
16
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-PD074PA075SM-L625F07Y
10-PD074PA075SM-L625F07Y-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
G11
0
22,5
22,5
22,5
22,5
22,5
22,5
22,5
22,5
17,8
15,3
7,2
4,7
0
2
2,9
S11
3
8,3
DC-1
DC-1
DC+
DC+
S12
4
10,8
19,6
22,1
29,1
32
5
6
7
8
G12
9
33,5
33,5
33,5
33,5
32
Ph1
10
11
12
13
14
15
16
17
18
19
20
21
22
Ph1
Ph2
Ph2
G14
29,1
22,1
19,6
10,8
8,3
0
S14
0
DC+
DC+
DC-2
DC-2
S13
0
0
0
2,9
0
0
0
G13
0
8
Therm1
Therm2
0
14,5
17
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
Pinout
DC+
5,6,15,16
T12
T14
D11
D13
G12
S12
G14
S14
8
7
13
14
Ph1
9,10
C10
C20
Ph2
11,12
T11
T13
D12
D14
G11
S11
G13
S13
20
19
1
2
Rt
Low current connection
3,4
DC-1
17,18
DC-2
Therm1
21
Therm2
22
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T13
D12, D14
T12, T14
D11, D13
C10, C20
Rt
IGBT
FWD
650 V
650 V
650 V
650 V
630 V
75 A
75 A
75 A
75 A
H-Bridge Switch - Lo side
H-Bridge Diode - Lo side
H-Bridge Switch - Hi side
H-Bridge Diode - Hi side
Capacitor (DC)
IGBT
FWD
Capacitor
Thermistor
Thermistor
18
Copyright Vincotech
26 Jun. 2020 / Revision 1
10-PD074PA075SM-L625F07Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PD074PA075SM-L625F07Y-D1-14
26 Jun. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
19
Copyright Vincotech
26 Jun. 2020 / Revision 1
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