10-PD126PA025SH-LA09F57Y [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-PD126PA025SH-LA09F57Y |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总18页 (文件大小：1668K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
flowPACK 0
1200 V / 25 A
Features
flow 0 17mm housing
● Trench + Field stop IGBT4 HS3 technology
● Fast switching and high efficient
● Open emitter configuration
● Compact and low inductance design
● Builtꢀin NTC
Schematic
Target applications
● Industrial Drives
● Solar
Types
● 10ꢀPD126PA025SHꢀLA09F57Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collectorꢀemitter voltage
1200
31
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gateꢀemitter voltage
tp limited by Tjmax
Tj = Tjmax
75
A
94
W
V
±20
tSC
Tj ≤ 150°C
VGE = 15V
10
µs
V
Short circuit ratings
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
Copyright Vincotech
1
08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak Repetitive Reverse Voltage
1200
25
V
A
Continuous (direct) forward current
Surge (nonꢀrepetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
100
50
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
61
Maximum Junction Temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
ꢀ40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
Isolation voltage
ꢀ40…(Tjmax ꢀ 25)
Visol
DC Test Voltage
tp = 2 s
4000
V
Creepage distance
min. 12,7
min. 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
CTI
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gateꢀemitter threshold voltage
VGE = VCE
0,00085 25
25
5,3
5,8
6,3
V
V
1,78
1,98
2,38
2,49
2,42
Collectorꢀemitter saturation voltage
VCEsat
15
25
125
150
ICES
IGES
rg
Collectorꢀemitter cutꢀoff current
Gateꢀemitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2,4
µA
nA
ꢁ
20
120
none
1430
115
75
Cies
Coes
Cres
Output capacitance
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,01
K/W
IGBT Dynamic
25
127
130
130
35
td(on)
125
150
25
Turnꢀon delay time
Rgoff = 32 ꢁ
Rgon = 32 ꢁ
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
37
37
210
265
277
49
ns
td(off)
Turnꢀoff delay time
Fall time
±15
600
25
tf
93
104
1,939
2,581
2,863
1,005
1,689
1,881
Qr
FWD
Qr
FWD
Qr
FWD
= 1,6 ꢂC
= 3,1 ꢂC
= 4 ꢂC
Eon
Turnꢀon energy (per pulse)
Turnꢀoff energy (per pulse)
mWs
Eoff
125
150
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
150
2,47
2,49
2,74
VF
Ir
Forward voltage
25
V
25
60
3300
Reverse leakage current
1200
150
µA
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Thermal resistance junction to sink
Rth(j-s)
1,56
K/W
FWD Dynamic
25
12
16
17
IRRM
125
150
25
Peak recovery current
A
341
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
502
591
ns
di/dt = 559 A/ꢂs
di/dt = 571 A/ꢂs ±15
di/dt = 555 A/ꢂs
1,608
3,148
3,956
0,603
1,247
1,594
96
Recovered charge
600
25
ꢂC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
54
60
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kꢁ
%
Deviation of R100
Power dissipation
Power dissipation constant
Bꢀvalue
R100 = 1484 ꢁ
ꢀ5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
Bꢀvalue
K
Vincotech NTC Reference
I
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
I
I
I
I
I
I
I
I
tp
=
250
15
ꢂs
V
25 °C
125 °C
150 °C
tp
=
250
150
ꢂs
°C
VGE
=
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10ꢀ1
10ꢀ2
10ꢀ3
10ꢀ5
10ꢀ4
10ꢀ3
10ꢀ2
10ꢀ1
100
101
tp(s)
102
tp
=
100
10
ꢂs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,01
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
8,44Eꢀ02
2,46Eꢀ01
4,48Eꢀ01
1,38Eꢀ01
5,48Eꢀ02
3,85Eꢀ02
1,03E+00
1,79Eꢀ01
5,38Eꢀ02
1,04Eꢀ02
1,66Eꢀ03
8,73Eꢀ04
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs Gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
V
V
V
V
I I
I I
At
IC=
At
D =
single pulse
80
25
A
Ts
VGE
Tj
=
ºC
V
=
=
±15
Tjmax
figure 7.
Short circuit duration as a function of VGE
IGBT
figure 8.
Typical short circuit current as a function of VGE
IGBT
tpSC = f(VGE
)
I SC = f(VGE)
t
t
t
t
I I
I I
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10ꢀ1
0,1
0,05
0,02
0,01
0,005
0.000
10ꢀ2
10ꢀ4
=
10ꢀ3
10ꢀ2
10ꢀ1
100
101
102
D =
R th(j-s)
tp
=
250
ꢂs
25 °C
150 °C
tp / T
1,56
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,65Eꢀ02
1,06Eꢀ01
4,71Eꢀ01
4,83Eꢀ01
2,34Eꢀ01
1,81Eꢀ01
3,38Eꢀ02
4,86E+00
8,11Eꢀ01
1,09Eꢀ01
3,07Eꢀ02
7,03Eꢀ03
1,25Eꢀ03
3,28Eꢀ04
Copyright Vincotech
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Thermistor typical temperature characteristic
R T = f(T)
Copyright Vincotech
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(rg)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
600
±15
32
V
V
ꢁ
ꢁ
T
j
:
VCE
VGE
I C
=
=
=
600
±15
25
V
V
A
T j:
R gon
R goff
32
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(r g )
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
T j
600
±15
32
V
V
ꢁ
:
600
±15
25
V
V
A
VCE
VGE
=
=
=
T j
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(r g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
32
°C
V
150
600
±15
25
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
ꢁ
ꢁ
A
32
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
600
600
At
VCE
=
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
:
:
Tj
VGE
R gon
=
=
±15
32
Tj
VGE
I C
=
±15
25
=
Copyright Vincotech
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
±15
32
V
V
ꢁ
25 °C
125 °C
150 °C
600
±15
25
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
:
T j
=
T j
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
600
±15
32
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
600
±15
25
V
V
A
25 °C
125 °C
150 °C
:
:
T j
VGE
=
=
T j
VGE
I C
=
R gon
=
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
t
t
t
t
d
iF
/
/
d
t
t
t
t
t
t
i
i
i
i
dirr/dt
i
i
i
i
dirr
d
600
At
VCE
=
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
25
V
V
A
25 °C
125 °C
150 °C
:
:
T j
±15
32
VGE
=
=
T j
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
IC MAX
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
ꢁ
R gon =
R goff =
32
32
ꢁ
Copyright Vincotech
12
08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Inverter Switching Definitions
General conditions
=
=
=
125 °C
32 ꢁ
T j
Rgon
R goff
32 ꢁ
figure 1.
IGBT
figure 2.
IGBT
Turnꢀoff Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turnꢀon Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VCE
VGE
VGE
IC
tEoff
VCE
tEon
ꢀ15
ꢀ15
15
V
V
VGE (0%) =
VGE (0%) =
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
600
25
V
600
25
V
A
A
0,264
0,509
ꢂs
ꢂs
0,126
0,416
ꢂs
ꢂs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turnꢀoff Switching Waveforms & definition of tf
Turnꢀon Switching Waveforms & definition of tr
IC
VCE
tr
VCE
tf
IC
600
25
V
600
25
V
VC (100%) =
VC (100%) =
I C (100%) =
A
A
I
C (100%) =
0,085
µs
0,037
µs
t f =
tr
=
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Inverter Switching Definitions
figure 5.
IGBT
figure 6.
IGBT
Turnꢀoff Switching Waveforms & definition of tEoff
Turnꢀon Switching Waveforms & definition of tEon
Pon
Poff
Eoff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
15,01
kW
mJ
ꢂs
P on (100%) =
Eon (100%) =
15,01
2,60
0,42
kW
mJ
ꢂs
1,62
0,51
t Eoff
=
tEon =
figure 7.
FWD
Turnꢀoff Switching Waveforms & definition of trr
Id
Vd
fitted
Vd (100%) =
I d (100%) =
I RRM (100%) =
600
25
V
A
ꢀ16
0,511
A
ꢂs
t rr
=
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Inverter Switching Definitions
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Id
Qrr
Erec
tErec
Prec
25
A
15,01
1,28
1,00
kW
I d (100%) =
P rec (100%) =
Erec (100%) =
Q rr (100%) =
3,23
1,00
ꢂC
ꢂs
mJ
ꢂs
t Qrr
=
tErec =
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste 17mm housing with Pressꢀfit pins
10ꢀPD126PA025SHꢀLA09F57Y
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NNꢀNNNNNNNNNNNNNNꢀTTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
2,3
0
Function
DCꢀ3
DCꢀ3
S15
34
2
34
3
31,2
28,2
24,2
21,2
18,9
0
4
0
G15
5
0
G13
6
0
S13
7
0
DCꢀ2
8
Not assembled
9
16
13,8
10,8
5,7
2,7
0
5,4
0
DCꢀ2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
NTC2
NTC1
G11
S11
DCꢀ1
DCꢀ1
DC+
Ph1
0
0
0
0
0
2,3
12,2
23
23
23
23
23
23
23
23
23
12,2
0
0
2,5
7,75
15,7
18,4
21,45
26,65
31,5
34
Ph1
G12
Ph2
Ph2
G14
G16
Ph3
Ph3
DC+
34
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Pinout
Identification
ID
T11ꢀT16
D11ꢀD16
Rt
Component
IGBT
Voltage
1200 V
1200 V
Current
Function
Comment
25 A
25 A
Inverter Switch
Inverter Diode
Thermistor
FWD
Thermistor
Copyright Vincotech
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08 Jul. 2016 / Revision 1
10ꢀPD126PA025SHꢀLA09F57Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10ꢀPD126PA025SHꢀLA09F57YꢀD1ꢀ14
08 Jul. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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08 Jul. 2016 / Revision 1
相关型号：
10-PF07NIA100S505-P927F53T
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
10-PG06PPA020SJ-LJ01B08T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG06PPA030SJ-LJ02B08T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG06PPA030SJ01-LH52E08T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG06PPA030SJ02-LH92E08T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG06PPA030SJ04-LJ02B03T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG06PPA050SJ-LJ04B08T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG06PPA050SJ01-LH54E08T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG06PPA050SJ02-LH94E08T
5us short circuit withstand time;High speed switching;Low EMI;Short tail current
VINCOTECH
10-PG07N3A030S5-M894F96T
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
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