10-PG123BA080SH21-LN68L18T [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-PG123BA080SH21-LN68L18T |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总22页 (文件大小：6910K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PG123BA080SH21-LN68L18T
datasheet
flowBOOST 1 triple
1200 V / 80 A
Topology features
flow 1 12 mm housing
● Bypass Diode
● Kelvin Emitter for improved switching performance
● Temperature sensor
● Triple Booster
Component features
● Easy paralleling
● High speed switching
● Low switching losses
Housing features
● Base isolation: Al2O3
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● Solar Inverters
Types
● 10-PG123BA080SH21-LN68L18T
Copyright Vincotech
1
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
1200
78
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
240
192
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
47
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
286
408
96
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1600
47
V
A
IF
IFSM
I2t
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
270
370
61
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
150
Copyright Vincotech
2
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
ByPass Diode
VRRM
Peak repetitive reverse voltage
1600
94
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
600
1800
113
150
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
11,53
≥ 600
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
3
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,003
80
25
5,3
5,8
6,3
V
V
25
1,78
1,99
2,33
2,41
2,42(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
10
µA
nA
Ω
20
240
None
4660
300
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
260
VCC = 960 V
15
80
370
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,5
K/W
Rth(j-s)
25
27,8
27,26
27,08
17,04
18,29
18,94
253,26
312,64
326,81
35,66
73,64
87,85
1,58
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
700
80
tf
125
150
25
ns
QrFWD=0,236 µC
QrFWD=0,234 µC
QrFWD=0,228 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,97
mWs
mWs
2,09
3,68
Eoff
125
150
5,82
6,43
Copyright Vincotech
4
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,44
1,71
1,81
0,4
1,6(1)
160
VF
IR
Forward voltage
40
125
150
25
V
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
28
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,99
K/W
Rth(j-s)
25
31,88
30,27
29,42
12,64
13,06
13,16
0,236
0,234
0,228
0,078
0,075
0,072
5872,58
5171,9
4213,78
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=5717 A/µs
di/dt=5016 A/µs
di/dt=5857 A/µs
Qr
Recovered charge
0/15
700
80
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
5
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,15
1,1
1,5(1)
VF
IR
Forward voltage
28
V
125
25
100
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
1000
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
1,15
K/W
Rth(j-s)
ByPass Diode
Static
25
1,07
1
1,5(1)
VF
IR
Forward voltage
50
125
150
25
V
0,983
100
2
Reverse leakage current
Thermal
Vr = 1600 V
µA
150
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
0,62
K/W
Rth(j-s)
Copyright Vincotech
6
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
25
5
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 499 Ω
100
25
3,2
3,3
130
1,3
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
3380
Vincotech Thermistor Reference
V
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
7
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
250
250
VGE
:
7 V
8 V
9 V
200
150
100
50
200
150
100
50
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
2,5
5,0
7,5
10,0
12,5
2,5
5,0
7,5
10,0
12,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
80
10
-1
60
40
20
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,495
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,27E-02
1,80E-01
1,82E-01
3,03E-02
2,06E-02
1,36E+00
1,79E-01
5,73E-02
3,66E-03
2,43E-04
Copyright Vincotech
8
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
10µs
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
9
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Boost Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
100
75
50
25
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,986
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,13E-02
1,88E-01
5,18E-01
1,44E-01
5,47E-02
1,41E+00
1,88E-01
5,07E-02
6,19E-03
8,41E-04
Copyright Vincotech
10
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Boost Sw. Protection Diode Characteristics
figure 8.
Rectifier
figure 9.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
-2
10
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,00
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
2,00
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
1,149
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
Rectifier thermal model values
R (K/W)
τ (s)
8,29E-02
1,02E-01
4,20E-01
3,78E-01
1,08E-01
5,78E-02
7,59E+00
6,72E-01
1,19E-01
4,22E-02
4,04E-03
7,21E-04
Copyright Vincotech
11
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
ByPass Diode Characteristics
figure 10.
Rectifier
figure 11.
Rectifier
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
10
50
0,5
0,2
-3
10
0,1
0,05
0,02
0,01
0,005
0
25
-4
0
0,00
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,25
0,50
μs
0,75
1,00
1,25
1,50
1,75
VF(V)
10
10
10
10
tp(s)
tp
=
250
D =
tp / T
0,62
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
Rectifier thermal model values
R (K/W)
τ (s)
3,05E-02
7,00E-02
1,92E-01
2,54E-01
4,42E-02
2,73E-02
2,83E-03
6,33E+00
1,17E+00
1,79E-01
5,78E-02
6,88E-03
1,10E-03
5,91E-04
Copyright Vincotech
12
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Thermistor Characteristics
figure 12.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
13
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Boost Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
12,5
10,0
7,5
8
7
6
5
4
3
2
1
0
Eoff
Eoff
Eoff
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eon
Eon
5,0
Eon
2,5
0,0
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
125 °C
150 °C
700
0/15
80
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
Ω
Ω
4
figure 15.
FWD
figure 16.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,10
0,08
0,06
0,04
0,02
0,00
0,25
0,20
0,15
0,10
0,05
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
125 °C
150 °C
700
0/15
80
V
125 °C
150 °C
Tj:
Tj:
V
A
Ω
Copyright Vincotech
14
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Boost Switching Characteristics
figure 17.
IGBT
figure 18.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
tf
td(on)
tr
-1
10
tf
td(on)
-2
10
tr
-3
10
-2
10
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
700
0/15
4
°C
150
700
0/15
80
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
4
figure 19.
FWD
figure 20.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
80
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
15
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Boost Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
125 °C
150 °C
700
0/15
80
V
125 °C
150 °C
Tj:
Tj:
V
A
Ω
figure 23.
FWD
figure 24.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
40
35
30
25
20
15
10
5
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
125 °C
150 °C
700
0/15
80
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
16
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Boost Switching Characteristics
figure 25.
FWD
figure 26.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
9000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
8000
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
150
175
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
700
0/15
4
V
V
Ω
125 °C
150 °C
700
0/15
80
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 27.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
4
4
Ω
Ω
Copyright Vincotech
17
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Boost Switching Definitions
figure 28.
IGBT
figure 29.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 30.
IGBT
figure 31.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
18
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Boost Switching Definitions
figure 32.
FWD
figure 33.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
19
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PG123BA080SH21-LN68L18T
10-PG123BA080SH21-LN68L18T-/7/
10-PG123BA080SH21-LN68L18T-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
DC+Boost2
DC+Boost2
S29
52,2
52,2
43,9
43,9
37,9
2
2,8
0
3
4
2,8
0
G29
5
DC-
Boost21
DC-
Boost21
DC-
Boost12
DC-
6
7
8
37,9
32,1
32,1
2,8
0
2,8
Boost12
S27
9
26,1
26,1
17,4
17,4
14,6
14,6
6
0
2,8
0
10
11
12
13
14
15
16
17
G27
DC+Boost1
DC+Boost1
DC+Boost1
DC+Boost1
S25
2,8
0
2,8
0
6
2,8
0
G25
0
DC-
Boost11
DC-
18
0
2,8
Boost11
Boost11
Boost11
DC+In11
DC+In11
DC+In12
DC+In12
Boost12
Boost12
Boost21
Boost21
DC+In21
DC+In21
Therm1
Therm2
19
20
21
22
23
24
25
26
27
28
29
30
31
32
0
25,4
28,2
25,4
28,2
25,4
28,2
28,2
28,2
28,2
28,2
28,2
25,4
19,2
19,2
0
8,5
8,5
18,7
18,7
28,1
30,9
39,2
42
52,2
52,2
36,3
33,3
Copyright Vincotech
20
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Pinout
DC+Boost1
11,12,13,14
DC+Boost2
1,2
D30
D26
DC+In21
29,30
DC+In11
21,22
D28
DC+In12
23,24
D25
D27
D29
Boost11
19,20
Boost21
27,28
Boost12
25,26
T25
T27
T29
D45
G27
D47
D49
G25
S25
G29
S29
16
15
10
9
4
3
S27
Rt
DC-Boost11
17,18
DC-Boost12
7,8
DC-Boost21
5,6
Therm1
31
Therm2
32
Identification
Component
Voltage
Current
Function
Comment
ID
T25, T27, T29
D25, D27, D29
D45, D47, D49
D26, D28, D30
Rt
IGBT
FWD
1200 V
1200 V
1600 V
1600 V
80 A
40 A
28 A
50 A
Boost Switch
Boost Diode
Rectifier
Rectifier
Thermistor
Boost Sw. Protection Diode
ByPass Diode
Thermistor
Copyright Vincotech
21
31 Mar. 2023 / Revision 2
10-PG123BA080SH21-LN68L18T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PG123BA080SH21-LN68L18T-D2-14
31 Mar. 2023
Change Boost Diode
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
22
31 Mar. 2023 / Revision 2
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