10-PG12NAC008MR04-LC69F46T [VINCOTECH]
Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode;
| 型号： | 10-PG12NAC008MR04-LC69F46T |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low on-resistance;Fast switching speed;Fast recovery body diode |
| 文件： | 总60页 (文件大小：6856K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
flowANPC 1 split
1500 V / 8 mΩ
Features
flow 1 12 mm housing
● Split Advanced NPC topology
● Ultra-high switching frequency with SiC MOSFETs
● Split topology for better thermal performance
● No x-conduction at high frequencies
LC59F46T
LC69F46T
Schematic
Target applications
● Solar Inverters
Types
● 10-PG12NAB008MR04-LC59F46T
● 10-PG12NAC008MR04-LC69F46T
LC59F46T
LC69F46T
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
AC Switch
VDSS
ID
Drain-source voltage
1200
164
V
A
Drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
Peak drain current
tp limited by Tjmax
Tj = Tjmax
685
A
Ptot
VGSS
Tjmax
Total power dissipation
Gate-source voltage
Maximum Junction Temperature
381
W
V
-4/22
175
°C
Copyright Vincotech
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17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
AC Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
85
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
252
243
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Neutral Point Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
149
300
287
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
Neutral Point Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
111
300
183
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Neutral Point Switch Prot. Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
1200
21
V
A
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
65
A
50 Hz Single Half Sine Wave
tp = 10 ms
21
A2s
W
°C
Total power dissipation
Tj = Tjmax
70
Maximum junction temperature
175
Copyright Vincotech
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10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
DC-Link Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
149
300
287
±20
175
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
°C
DC-Link Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
86
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
200
158
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
DC-Link Switch Prot. Diode
VRRM
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
1200
86
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
Ptot
200
158
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Capacitor (GS)
VMAX
Top
Maximum DC voltage
25
V
Operation Temperature
-55…+125
°C
Copyright Vincotech
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10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
Isolation voltage
-40…(Tjmax - 25)
Visol
DC Test Voltage*
tp = 2 s
6000
min. 12,7
8,33
V
Creepage distance
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
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10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
AC Switch
Static
25
8
10
rDS(on)
125
150
11
12
Drain-source on-state resistance
18
100
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
10
0,05
25
25
25
2,7
0
5,6
±500
50
V
-4/22
0
0
nA
µA
Ω
1200
1,4
535
110
205
6685
380
135
Qg
QGS
QGD
Ciss
Coss
Crss
Gate to source charge
18
600
800
100
25
25
25
nC
pF
Gate to drain charge
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Reverse Diode Static
Diode forward voltage
f = 1 MHz
0
VSD
0
100
3,2
V
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,25
K/W
AC Diode
Static
25
125
1,63
2,04
1,7
VF
IR
Forward voltage
Reverse leakage current
Thermal
60
V
1200
25
1200
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,39
K/W
Copyright Vincotech
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10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
AC Real Open configuration
Switch Dynamic
25
49
41
39
td(on)
125
150
25
Turn-on delay time
Rise time
18
tr
125
150
25
125
150
15
17
133
145
146
16
Rgon = 2 Ω
Rgoff = 2 Ω
ns
td(off)
Turn-off delay time
Fall time
-2 / 18
600
100
25
tf
125
150
25
125
150
25
12
13
2,18
2,02
2,05
0,929
1,28
Qr
FWD
Qr
FWD
Qr
FWD
= 0,8 μC
= 0,7 μC
= 0,7 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
1,29
Diode Dynamic
25
24
55
55
IRRM
125
150
25
Peak recovery current
A
22
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
16
17
ns
di/dt = 5202 A/μs
di/dt = 7639 A/μs
di/dt = 7755 A/μs
0,759
0,729
0,713
0,156
0,165
0,177
2264
9943
9635
-2 / 18
600
100
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
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17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
AC Reactive Open configuration
Switch Dynamic
25
51
55
54
td(on)
125
150
25
Turn-on delay time
Rise time
18
tr
125
150
25
125
150
20
21
132
143
146
18
Rgon = 2 Ω
Rgoff = 2 Ω
ns
td(off)
Turn-off delay time
Fall time
-2 / 18
600
100
25
tf
125
150
25
125
150
25
23
23
1,92
1,91
2,07
1,65
1,75
Qr
FWD
Qr
FWD
Qr
FWD
= 1,2 μC
= 1,2 μC
= 1,2 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
1,74
Diode Dynamic
25
45
43
45
IRRM
125
150
25
Peak recovery current
A
32
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
37
37
ns
di/dt = 6506 A/μs
di/dt = 4757 A/μs
di/dt = 4833 A/μs
1,22
1,21
1,20
0,455
0,598
0,592
4067
2444
2741
-2 / 18
600
100
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
7
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
AC Real Short configuration
Switch Dynamic
25
54
53
53
td(on)
125
150
25
Turn-on delay time
Rise time
20
tr
125
150
25
125
150
22
22
134
146
147
22
Rgon = 2 Ω
Rgoff = 2 Ω
ns
td(off)
Turn-off delay time
Fall time
-2 / 18
600
100
25
tf
125
150
25
125
150
25
24
25
1,89
1,64
1,62
1,13
1,38
Qr
FWD
Qr
FWD
Qr
FWD
= 1,2 μC
= 1,2 μC
= 1,1 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
1,45
Diode Dynamic
25
53
48
49
IRRM
125
150
25
Peak recovery current
A
33
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
34
34
ns
di/dt = 4768 A/μs
di/dt = 4373 A/μs
di/dt = 4246 A/μs
1,15
1,19
1,12
0,563
0,671
0,636
4288
3726
3800
-2 / 18
600
100
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
8
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
AC Reactive Short configuration
Switch Dynamic
25
57
55
53
td(on)
125
150
25
Turn-on delay time
Rise time
25
tr
125
150
25
125
150
25
25
132
144
145
24
Rgon = 2 Ω
Rgoff = 2 Ω
ns
td(off)
Turn-off delay time
Fall time
-2 / 18
600
100
25
tf
125
150
25
125
150
25
25
26
1,69
1,64
1,69
1,41
1,55
Qr
FWD
Qr
FWD
Qr
FWD
= 1,8 μC
= 1,6 μC
= 1,8 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
1,57
Diode Dynamic
25
65
61
63
IRRM
125
150
25
Peak recovery current
A
45
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
44
45
ns
di/dt = 4238 A/μs
di/dt = 4105 A/μs
di/dt = 4164 A/μs
1,84
1,63
1,77
1,021
0,891
0,964
3747
3368
3440
-2 / 18
600
100
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
9
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Neutral Point Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,015
150
25
5,4
6
6,6
V
V
25
1,57
1,80
1,86
1,85
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
3
Cies
Coes
Cres
Qg
30000
880
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
320
15
600
150
1000
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,33
K/W
25
335
349
351
38
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
47
49
Rgon = 2 Ω
Rgoff = 2 Ω
ns
304
351
363
101
139
142
8,92
11,15
11,85
7,89
10,42
td(off)
Turn-off delay time
Fall time
±15
600
100
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 10,4 μC
= 15 μC
= 16,2 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
10,95
Copyright Vincotech
10
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Neutral Point Diode
Static
25
1,80
1,90
1,90
2,1
40
VF
IR
125
150
Forward voltage
150
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,52
K/W
25
83
86
88
IRRM
125
150
25
Peak recovery current
A
310
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
419
453
ns
di/dt = 2662 A/μs
di/dt = 2286 A/μs
di/dt = 2159 A/μs
10,40
15,02
16,24
3,99
5,95
6,43
507
±15
600
100
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
513
504
Neutral Point Switch Prot. Diode
Static
25
125
25
2,37
2,47
2,71
VF
IR
Forward voltage
Reverse leakage current
Thermal
15
V
60
1800
1200
µA
150
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,35
K/W
Copyright Vincotech
11
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10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
DC-Link Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,015
150
25
5,4
6
6,6
V
V
25
1,57
1,80
1,86
1,85
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
100
500
µA
nA
Ω
20
3
Cies
Coes
Cres
Qg
30000
880
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
320
15
600
150
1000
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,33
K/W
25
317
335
350
36
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
41
45
Rgon = 2 Ω
Rgoff = 2 Ω
ns
306
351
368
97
136
146
9,56
13,18
13,42
7,12
9,90
td(off)
Turn-off delay time
Fall time
±15
600
100
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 12,8 μC
= 20,8 μC
= 22,3 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
11,12
Copyright Vincotech
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10-PG12NAC008MR04-LC69F46T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
DC-Link Diode
Static
25
1,82
1,96
1,97
2,1
40
VF
IR
125
150
Forward voltage
100
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,60
K/W
25
117
120
118
IRRM
125
150
25
Peak recovery current
A
268
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
406
454
ns
di/dt = 2578 A/μs
di/dt = 2565 A/μs
di/dt = 2545 A/μs
12,79
20,79
22,27
4,36
7,63
8,66
865
±15
600
100
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
626
632
DC-Link Switch Prot. Diode
Static
25
1,82
1,96
1,97
2,1
40
VF
IR
125
150
Forward voltage
100
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,60
10
K/W
Capacitor (GS)
Capacitance
C
nF
%
%
Tolerance
-10
+10
0,1
Dissipation factor
f = 1 kHz
25
Copyright Vincotech
13
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10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
14
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
I D = f(VDS
)
I D = f(VDS)
VGS
:
tp
=
250
18
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGS
=
V
Tj:
VGS from
-4 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
I D = f(VGS
)
Z th(j-s)= f(tp)
100
Z
10-1
10-2
10-4
10-3
10-2
10-1
10
101
102
tp(s)
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,25
VDS
=
V
Tj:
=
K/W
MOSFET thermal model values
R (K/W)
1,24E-02
4,34E-02
6,77E-02
1,07E-01
6,92E-03
5,51E-03
τ (s)
4,44E+00
1,03E+00
1,99E-01
5,57E-02
4,37E-03
1,30E-03
Copyright Vincotech
15
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Switch Characteristics
figure 5.
MOSFET
Gate voltage vs Gate charge
VGS = f(Q g)
600 V
At
I C=
100
A
Copyright Vincotech
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17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-3
10-4
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
D =
tp / T
Tj:
125 °C
R th(j-s)
0,39
K/W
FWD thermal model values
R (K/W)
τ (s)
1,95E-02
6,79E-02
1,06E-01
1,67E-01
1,08E-02
8,63E-03
1,10E-02
6,94E+00
1,61E+00
3,11E-01
8,72E-02
6,83E-03
2,04E-03
5,15E-04
Copyright Vincotech
17
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Neutral Point Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,33
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,65E-02
5,75E-02
8,96E-02
1,41E-01
9,17E-03
7,30E-03
9,30E-03
5,88E+00
1,37E+00
2,63E-01
7,38E-02
5,78E-03
1,73E-03
4,36E-04
Copyright Vincotech
18
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Neutral Point Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80
Ts
=
ºC
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Neutral Point Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-3
10-4
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
0,52
K/W
FWD thermal model values
R (K/W)
τ (s)
2,59E-02
9,06E-02
1,41E-01
2,22E-01
1,44E-02
1,15E-02
1,46E-02
9,26E+00
2,15E+00
4,14E-01
1,16E-01
9,10E-03
2,72E-03
6,86E-04
Copyright Vincotech
20
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Neutral Point Switch Prot. Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
D =
tp / T
1,35
Tj:
125 °C
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
6,72E-02
2,35E-01
3,66E-01
5,76E-01
3,74E-02
2,98E-02
3,80E-02
2,40E+01
5,58E+00
1,07E+00
3,01E-01
2,36E-02
7,04E-03
1,78E-03
Copyright Vincotech
21
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
DC-Link Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,33
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,65E-02
5,75E-02
8,96E-02
1,41E-01
9,17E-03
7,30E-03
9,30E-03
5,88E+00
1,37E+00
2,63E-01
7,38E-02
5,78E-03
1,73E-03
4,36E-04
Copyright Vincotech
22
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
DC-Link Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80
Ts
=
ºC
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
23
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
DC-Link Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-3
10-4
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
0,60
K/W
FWD thermal model values
R (K/W)
τ (s)
2,99E-02
1,04E-01
1,63E-01
2,56E-01
1,66E-02
1,33E-02
1,69E-02
1,07E+01
2,48E+00
4,77E-01
1,34E-01
1,05E-02
3,13E-03
7,91E-04
Copyright Vincotech
24
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
DC-Link Switch Prot. Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-3
10-4
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
0,60
K/W
FWD thermal model values
R (K/W)
τ (s)
2,99E-02
1,04E-01
1,63E-01
2,56E-01
1,66E-02
1,33E-02
1,69E-02
1,07E+01
2,48E+00
4,77E-01
1,34E-01
1,05E-02
3,13E-03
7,91E-04
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
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17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Real Open Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
-2 / 18
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
-2 / 18
R gon
R goff
2
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
-2 / 18
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
-2 / 18
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
26
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Real Open Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
-2 / 18
2
°C
V
Tj =
150
600
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-2 / 18
100
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
600
At
VCE
=
V
V
Ω
At
VCE
=
600
V
V
A
25 °C
25 °C
VGE
=
=
-2 / 18
2
Tj:
VGE
I C
=
-2 / 18
100
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
27
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Real Open Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
600
-2 / 18
2
V
V
Ω
At
VCE
VGE
I C
=
600
-2 / 18
100
V
V
A
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
600
-2 / 18
2
V
V
Ω
At
VCE
VGE
I C
=
600
-2 / 18
100
V
V
A
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
28
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Real Open Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
V
V
A
25 °C
VGE
R gon
=
=
-2 / 18
2
=
-2 / 18
100
125 °C
Tj:
Tj:
=
150 °C
AC Real Open measurement circuit
Copyright Vincotech
29
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Reactive Open Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
-2 / 18
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
-2 / 18
R gon
R goff
2
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
-2 / 18
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
-2 / 18
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
30
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Reactive Open Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
-2 / 18
2
°C
V
Tj =
150
600
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-2 / 18
100
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
trr
600
At
VCE
=
V
V
Ω
At
VCE
=
600
V
V
A
25 °C
25 °C
VGE
=
=
-2 / 18
2
Tj:
VGE
I C
=
-2 / 18
100
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
31
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Reactive Open Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
600
-2 / 18
2
V
V
Ω
At
VCE
VGE
I C
=
600
-2 / 18
100
V
V
A
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
600
-2 / 18
2
V
V
Ω
At
VCE
VGE
I C
=
600
-2 / 18
100
V
V
A
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
32
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Reactive Open Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dir r/dt
t
t
i
At
VCE
=
600
-2 / 18
2
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
V
V
A
25 °C
VGE
=
=
=
-2 / 18
100
125 °C
Tj:
Tj:
R gon
=
150 °C
AC Reactive Open measurement circuit
Copyright Vincotech
33
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Real Short Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
-2 / 18
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
-2 / 18
R gon
R goff
2
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
-2 / 18
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
-2 / 18
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
34
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Real Short Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
-2 / 18
2
°C
V
Tj =
150
600
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-2 / 18
100
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
600
At
VCE
=
V
V
Ω
At
VCE
=
600
V
V
A
25 °C
25 °C
VGE
=
=
-2 / 18
2
Tj:
VGE
I C
=
-2 / 18
100
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
35
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Real Short Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
600
-2 / 18
2
V
V
Ω
At
VCE
VGE
I C
=
600
-2 / 18
100
V
V
A
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
600
-2 / 18
2
V
V
Ω
At
VCE
VGE
I C
=
600
-2 / 18
100
V
V
A
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
36
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Real Short Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
V
V
A
25 °C
VGE
R gon
=
=
-2 / 18
2
=
-2 / 18
100
125 °C
Tj:
Tj:
=
150 °C
AC Real Short measurement circuit
Copyright Vincotech
37
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Reactive Short Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
-2 / 18
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
-2 / 18
R gon
R goff
2
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
-2 / 18
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
-2 / 18
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
38
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Reactive Short Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
-2 / 18
2
°C
V
Tj =
150
600
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-2 / 18
100
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
600
At
VCE
=
V
V
Ω
At
VCE
=
600
V
V
A
25 °C
25 °C
VGE
=
=
-2 / 18
2
Tj:
VGE
I C
=
-2 / 18
100
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
39
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Reactive Short Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
600
-2 / 18
2
V
V
Ω
At
VCE
VGE
I C
=
600
-2 / 18
100
V
V
A
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
600
-2 / 18
2
V
V
Ω
At
VCE
VGE
I C
=
600
-2 / 18
100
V
V
A
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
40
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Reactive Short Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
V
V
A
25 °C
VGE
=
=
-2 / 18
2
=
-2 / 18
100
125 °C
Tj:
Tj:
R gon
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
125
°C
Ω
R gon
R goff
=
=
2
2
Ω
Copyright Vincotech
41
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
2 Ω
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-2
V
VGE (0%) =
-2
18
V
VGE (100%) =
VC (100%) =
I C (100%) =
18
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
600
100
144
V
600
100
55
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
600
100
25
V
VC (100%) =
I C (100%) =
600
100
25
V
A
A
ns
tr
=
ns
Copyright Vincotech
42
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
AC Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
100
61
V
I F (100%) =
Q r (100%) =
100
A
A
1,63
μC
A
trr
=
44
ns
AC Reactive Short measurement circuit
Copyright Vincotech
43
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Neutral Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
±15
2
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
44
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Neutral Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
±15
2
°C
V
Tj =
150
600
±15
100
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
600
At
VCE
=
V
At
VCE
=
600
±15
100
V
V
A
25 °C
25 °C
VGE
=
=
±15
V
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
2
Ω
=
Copyright Vincotech
45
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Neutral Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
600
±15
2
V
V
Ω
At
VCE
VGE
I C
=
600
±15
100
V
V
A
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
25 °C
At
VCE
=
600
±15
2
V
V
Ω
At
VCE
VGE
I C
=
600
±15
100
V
V
A
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
46
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Neutral Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/dt
dir r/dt
t
t
dir r/dt
i
i
At
VCE
=
600
±15
2
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
100
V
V
A
25 °C
VGE
R gon
=
=
=
125 °C
Tj:
Tj:
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj =
125
°C
Ω
R gon
R goff
=
=
2
2
Ω
Copyright Vincotech
47
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Neutral Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
2 Ω
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
100
351
V
600
100
349
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
600
100
139
V
VC (100%) =
I C (100%) =
600
100
47
V
A
A
ns
tr
=
ns
Copyright Vincotech
48
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Neutral Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
100
86
V
I F (100%) =
Q r (100%) =
100
A
A
15,02
μC
A
trr
=
419
ns
Neutral Switching measurement circuit
Copyright Vincotech
49
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
DC Open Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
±15
2
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
2
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
2
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
50
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
DC Open Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
±15
2
°C
V
Tj =
150
600
±15
100
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
2
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
600
At
VCE
=
V
V
Ω
At
VCE
=
600
±15
100
V
V
A
25 °C
25 °C
VGE
=
=
±15
Tj:
VGE
I C
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
2
=
Copyright Vincotech
51
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
DC Open Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
At
VCE
VGE
R gon
=
600
±15
2
V
V
Ω
At
VCE
VGE
I C
=
600
±15
100
V
V
A
25 °C
25 °C
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
600
±15
2
V
V
Ω
At
VCE
VGE
I C
=
600
±15
100
V
V
A
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
52
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
DC Open Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
100
V
V
A
25 °C
VGE
R gon
=
=
±15
=
125 °C
Tj:
Tj:
2
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
125
°C
Ω
R gon
R goff
=
=
2
2
Ω
Copyright Vincotech
53
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
DC Open Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
2 Ω
2 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
100
351
V
600
100
335
V
A
A
tdoff
=
ns
tdon
=
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
600
100
136
V
VC (100%) =
I C (100%) =
600
100
41
V
A
A
ns
tr
=
ns
Copyright Vincotech
54
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
DC Open Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
100
120
406
V
I F (100%) =
Q r (100%) =
100
A
A
20,79
μC
A
trr
=
ns
DC Open Switching measurement circuit
Copyright Vincotech
55
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with press-fit pins
with thermal paste 12 mm housing with press-fit pins
Ordering Code
10-PG12NAB008MR04-LC59F46T
10-PG12NAB008MR04-LC59F46T -/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
High Side Module 10-PG12NAB008MR04-LC59F46T
Outline
Pin table
Y
Pin
X
Function
Not assembled
1
2
52,9
49,9
52,9
49,9
3
3
0
0
DC-1
3
4
DC-1
DC-1
DC-1
5
6
Not assembled
7
40
37
0
0
GND1
GND1
8
9
Not assembled
Not assembled
10
11
12
13
21,8
18,9
0
0
GND1
GND1
Not assembled
14
15
16
17
18
19
20
21
22
9
6
3
0
0
0
0
0
DC+1
DC+1
DC+1
DC+1
G11
0
0
9,5
12,5
S11
12,45 17,45
15,45 18,45
G13
S13
0
3
28,9
28,9
Therm11
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
Therm12
Not assembled
Not assembled
Not assembled
Not assembled
Not assembled
Not assembled
Not assembled
Not assembled
40,9
43,9
46,9
49,9
52,9
44,3
41,2
38,2
37,95
28,9
28,9
28,9
28,9
28,9
17,9
14,7
14,7
17,9
Ph1
Ph1
Ph1
Ph1
Ph1
N1
S15
G15
N1
Not assembled
Not assembled
29,35
26,9
18,5
15,6
P1
P1
Not assembled
Not assembled
Not assembled
Not assembled
Copyright Vincotech
56
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
High Side Module 10-PG12NAB008MR04-LC59F46T
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T13
MOSFET
1200 V
8 mΩ
60 A
AC Switch
D13
T15
FWD
IGBT
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
25 V
AC Diode
Neutral Point Switch
Neutral Point Diode
Neutral Point Switch Prot. Diode
DC-Link Switch
150 A
150 A
15 A
D16-b
D15-a
T11
FWD
FWD
IGBT
150 A
100 A
100 A
D12-b
D11-a
C13
FWD
DC-Link Diode
FWD
DC-Link Switch Prot. Diode
Capacitor (GS)
Capacitor
NTC
Rt1
Thermistor
Copyright Vincotech
57
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with press-fit pins
with thermal paste 12 mm housing with press-fit pins
Ordering Code
10-PG12NAC008MR04-LC69F46T
10-PG12NAC008MR04-LC69F46T-/3/
Name
NN-NNNNNNNNNNNNNN-TTTTTTVV
Date code
WWYY
UL & VIN
UL VIN
Lot
LLLLL
Serial
SSSS
Text
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Type&Ver
Lot number
Serial
SSSS
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
Low Side Module 10-PG12NAC008MR04-LC69F46T
Outline
Pin table
Pin
X
Y
6
3
3
0
0
Function
Ph2
52,9
52,9
49,9
52,9
49,9
1
2
Ph2
Ph2
Ph2
Ph2
3
4
5
6
Not assembled
Not assembled
Not assembled
7
8
9
31,5
28,5
0
1
S14
G14
10
11
12
13
14
15
16
17
18
19
20
21
22
Not assembled
Not assembled
Not assembled
Not assembled
Not assembled
3
0
0
0
0
0
Therm21
Therm22
S16
9,5
12,5
G16
Not assembled
Not assembled
0
28,9
DC+2
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
3
6
9
28,9
28,9
28,9
DC+2
DC+2
DC+2
Not assembled
18,9
21,8
31
28,9
28,9
28,9
28,9
GND2
GND2
GND2
GND2
34
Not assembled
Not assembled
43,9
46,9
49,9
52,9
28,9
28,9
28,9
28,9
DC-2
DC-2
DC-2
DC-2
Not assembled
Not assembled
Not assembled
Not assembled
35,9
14,9
17,9
G12
S12
35,35
Not assembled
26,9
26,9
15,6
13
N2
N2
Not assembled
17,8
15,2
12,3
12,3
P2
P2
Copyright Vincotech
58
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Low Side Module 10-PG12NAC008MR04-LC69F46T
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T14
MOSFET
1200 V
8 mΩ
60 A
AC Switch
D14
T16
FWD
IGBT
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
1200 V
25 V
AC Diode
Neutral Point Switch
Neutral Point Diode
Neutral Point Switch Prot. Diode
DC-Link Switch
150 A
150 A
15 A
D15-b
D16-a
T12
FWD
FWD
IGBT
150 A
100 A
100 A
D11-b
D16-a
C14
FWD
DC-Link Diode
FWD
DC-Link Switch Prot. Diode
Capacitor (GS)
Capacitor
NTC
Rt2
Thermistor
Copyright Vincotech
59
17 May. 2019 / Revision 2
10-PG12NAB008MR04-LC59F46T
10-PG12NAC008MR04-LC69F46T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Marketing application voltage modified
Correction of Ic/If values
1
2
10-PG12NAx008MR04-LCx9F46T-D2-14
17 May. 2019
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
60
17 May. 2019 / Revision 2
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