10-PY07HVA050S5-L984F08Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-PY07HVA050S5-L984F08Y |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总30页 (文件大小：2887K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
650 V / 50 A
flow PACK 1 H6.5
Features
flow 1 12 mm housing
● Innovative H6.5 Topology
● IGBT S5 + IGBT L5
● NTC
Press-fit
Solder
Schematic
Target applications
● Solar Inverters
● Special Application
Types
● 10-FY07HVA050S5-L984F08
● 10-PY07HVA050S5-L984F08Y
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
48
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
150
73
A
W
V
±20
175
Maximum junction temperature
°C
Copyright Vincotech
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10-PY07HVA050S5-L984F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
33
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
60
A
Tj = Tjmax
50
W
°C
Tjmax
Maximum Junction Temperature
175
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
42
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
67
W
V
±20
175
Maximum Junction Temperature
°C
Boost Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
33
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
60
A
Tj = Tjmax
50
W
°C
Tjmax
Maximum Junction Temperature
175
Copyright Vincotech
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
6000
2500
V
Visol
Isolation voltage
AC Voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
7,99
mm
mm
mm
Solder pin
Clearance
Press-fit pin
8,3
Comparative Tracking Index
*100 % tested in production
CTI
> 200
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10-PY07HVA050S5-L984F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0005 25
25
3,2
4
4,8
V
V
1,39
1,48
1,51
1,75
Collector-emitter saturation voltage
VCEsat
15
50
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
none
3100
88
Cies
Coes
Cres
Qg
Output capacitance
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
12
15
520
50
120
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,29
K/W
Dynamic
25
29
29
29
td(on)
125
150
25
Turn-on delay time
7
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
9
9
105
122
125
11
Rgoff = 8 Ω
Rgon = 8 Ω
ns
td(off)
Turn-off delay time
Fall time
-5/+15 350
50
tf
22
24
0,428
0,612
0,651
0,301
0,613
0,704
Qr
FWD
Qr
FWD
Qr
FWD
= 1,6 μC
= 2,8 μC
= 3,1 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
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10-PY07HVA050S5-L984F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
VF
Ir
Forward voltage
30
25
25
1,52
1,7
1,6
V
Reverse leakage current
650
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,92
K/W
Dynamic
25
55
76
80
IRRM
125
150
25
Peak recovery current
A
69
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
99
114
ns
di/dt = 4527 A/μs
di/dt = 5388 A/μs -5/+15 350
di/dt = 4657 A/μs
1,640
2,762
3,133
0,307
0,586
0,680
4200
5006
5105
50
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0004 25
25
4,2
5
5,8
V
V
1,07
1,03
1,04
1,45
Collector-emitter saturation voltage
VCEsat
15
30
0
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
100
none
4650
12
Cies
Cres
Qg
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
30
168
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,41
K/W
Dynamic
25
97
94
94
td(on)
Turn-on delay time
125
150
25
9
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
6
7
Rgoff = 8 Ω
Rgon = 8 Ω
ns
173
199
205
64
236
275
0,120
0,145
0,166
1,270
1,894
2,062
td(off)
Turn-off delay time
Fall time
±15
350
30
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 1,5 μC
= 2,8 μC
= 2,7 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
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10-PY07HVA050S5-L984F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
VF
Ir
Forward voltage
30
25
25
1,52
1,7
1,6
V
Reverse leakage current
650
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,92
K/W
Dynamic
25
37
59
64
IRRM
125
150
25
Peak recovery current
A
58
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
84
93
ns
di/dt = 5645 A/μs
di/dt = 5928 A/μs ±15
di/dt = 5670 A/μs
1,061
2,036
2,365
0,324
0,496
0,589
2031
3010
3613
350
30
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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10-PY07HVA050S5-L984F08Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,29
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
2,09E-01
6,00E-01
3,10E-01
1,08E-01
6,63E-02
5,36E-01
8,05E-02
1,69E-02
4,25E-03
5,30E-04
Copyright Vincotech
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10-PY07HVA050S5-L984F08Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
I
I
I
V
V
V
V
D =
single pulse
80 ºC
IC=
50
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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10-PY07HVA050S5-L984F08Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
1,92
T j:
K/W
FWD thermal model values
R (K/W)
τ
(s)
9,41E-02
3,44E-01
8,56E-01
3,61E-01
1,37E-01
1,27E-01
2,25E+00
2,12E-01
5,84E-02
9,83E-03
2,89E-03
4,79E-04
Copyright Vincotech
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10-PY07HVA050S5-L984F08Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
I
I
I
I
I
I
I
I
μs
tp
=
250
15
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
V
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
Transient Thermal Impedance as function of Pulse duration
IGBT
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D
=
tp
1,41
IGBT thermal model values
(K/W)
/ T
VCE
=
Tj:
R th(j-s)
=
K/W
R
τ
(s)
8,53E-02
2,62E-01
5,87E-01
2,62E-01
6,47E-02
1,51E-01
8,35E+00
4,97E-01
6,43E-02
1,70E-02
8,32E-03
8,63E-04
Copyright Vincotech
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10-PY07HVA050S5-L984F08Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs Gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
I
I
I
V
V
V
V
At
IC=
At
D =
single pulse
80 ºC
30
A
Ts
VGE
Tj
=
=
=
±15
V
Tjmax
ºC
Copyright Vincotech
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datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
1,92
T j:
K/W
FWD thermal model values
R (K/W)
τ
(s)
9,41E-02
3,44E-01
8,56E-01
3,61E-01
1,37E-01
1,27E-01
2,25E+00
2,12E-01
5,84E-02
9,83E-03
2,89E-03
4,79E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T)
Copyright Vincotech
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datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
350
-5/+15
50
V
V
A
Tj:
VCE
VGE
=
=
=
=
-5/+15
8
8
R gon
R goff
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
-5/+15
8
V
V
Ω
:
350
-5/+15
50
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
-5/+15
8
°C
V
150
350
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-5/+15
50
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
At
VCE
=
V
25 °C
125 °C
150 °C
At
VCE
=
350
V
V
A
25 °C
125 °C
150 °C
-5/+15
8
V
:
Tj
VGE
I C
=
-5/+15
50
:
Tj
VGE
R gon
=
=
Ω
=
Copyright Vincotech
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datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
-5/+15
8
V
V
Ω
25 °C
125 °C
150 °C
350
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
-5/+15
50
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
350
-5/+15
8
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
350
-5/+15
50
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
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datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
dir r/dt
d
iF
/
dt
t
t
t
t
t
t
t
t
i
i
i
i
dir r
/dt
i
i
i
i
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
V
V
A
25 °C
125 °C
150 °C
-5/+15
8
:
Tj
-5/+15
50
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
17
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Buck Switching Definitions
General conditions
=
=
=
125 °C
8 Ω
T j
Rgon
R goff
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
IC
VCE
VGE
tEoff
VCE
tEon
-5
VGE (0%) =
-5
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
+15
350
50
V
VGE (100%) =
VC (100%) =
I C (100%) =
+15
V
V
350
V
A
50
A
0,122
0,226
μs
μs
0,029
0,080
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
50
V
350
50
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
0,022
μs
0,009
μs
tr
=
Copyright Vincotech
18
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eoff
Pon
Eon
Poff
tEoff
tEon
P off (100%) =
Eoff (100%) =
17,59
0,61
0,23
kW
mJ
μs
P on (100%) =
Eon (100%) =
17,59
0,61
0,08
kW
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
350
50
V
A
-76
0,099
A
μs
t rr
=
Copyright Vincotech
19
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Buck Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
IF
Qr
Erec
tErec
Prec
50
A
17,59
0,59
0,20
kW
mJ
μs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
2,76
0,20
μC
μs
t Qr
=
tErec =
Copyright Vincotech
20
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
±15
8
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
350
±15
30
V
V
A
Tj:
VCE
VGE
=
=
=
=
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
±15
8
V
V
Ω
:
350
±15
30
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
21
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
±15
8
°C
V
150
350
±15
30
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
350
A
t
VCE
=
V
25 °C
125 °C
150 °C
At
VCE
=
350
V
V
A
25 °C
125 °C
150 °C
±15
8
V
:
Tj
VGE
I C
=
±15
30
:
Tj
VGE
R gon
=
=
Ω
=
Copyright Vincotech
22
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
±15
8
V
V
Ω
25 °C
125 °C
150 °C
350
±15
30
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
350
±15
8
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
350
±15
30
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
23
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF
/
dt
diF/dt
t
t
t
t
dir r/dt
t
t
t
t
dirr
/dt
i
i
i
i
i
i
i
i
At
VCE
=
350
±15
8
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
±15
30
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
24
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
8 Ω
T j
Rgon
R goff
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
VGE
IC
IC
VCE
VGE
tEoff
VCE
tEon
-15
VGE (0%) =
-15
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
30
V
350
30
V
A
A
0,149
0,541
μs
μs
0,095
0,127
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
30
V
350
30
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
A
0,221
μs
0,009
μs
tr
=
Copyright Vincotech
25
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Poff
Eoff
Eon
Pon
tEoff
tEon
P off (100%) =
Eoff (100%) =
10,53
2,52
0,54
kW
mJ
μs
P on (100%) =
Eon (100%) =
10,53
0,18
0,13
kW
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
350
30
V
A
-71
0,100
A
μs
t rr
=
Copyright Vincotech
26
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Erec
Qr
IF
Prec
tErec
30
A
10,53
0,74
0,20
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
2,84
0,20
μC
μs
mJ
μs
t Qr
=
tErec =
Copyright Vincotech
27
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
with thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with press-fit pins
with thermal paste 12 mm housing with press-fit pins
Ordering Code
10-FY07HVA050S5-L984F08
10-FY07HVA050S5-L984F08-/3/
10-PY07HVA050S5-L984F08Y
10-PY07HVA050S5-L984F08Y-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
0
Function
G14
52,2
49,2
1
2
S14
3
Not assembled
4
26,1
23,1
3
0
Therm2
5
0
Therm1
S12
G12
DC+
DC+
DC-1
DC-1
G11
S11
G21
S21
Ph2
6
0
7
0
0
8
0
8
9
0
10,5
17,7
20,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
10
11
12
13
14
15
16
17
18
19
20
21
22
0
0
0
3
10
13
20,35
22,85
29,35
31,85
39,2
42,2
49,2
Ph2
Ph1
Ph1
S22
G22
S13
23
24
25
26
27
28
52,2
52,2
52,2
52,2
52,2
26,1
28,2
20,2
17,7
10,5
8
G13
DC-2
DC-2
DC+
DC+
A20
22,1
Copyright Vincotech
28
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11 , T12 , T13 ,
T14
IGBT
650 V
50 A
Buck Switch
D12 , D14 , D20
T21 , T22
D21 , D22
Rt
FWD
IGBT
FWD
NTC
650 V
650 V
650 V
30 A
30 A
30 A
Boost Diode
Boost Switch
Buck Diode
Thermistor
Copyright Vincotech
29
21 Jul. 2017 / Revision 1
10-FY07HVA050S5-L984F08
10-PY07HVA050S5-L984F08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xY07HVA050S5-L984F08x-D1-14
21 Jul. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
21 Jul. 2017 / Revision 1
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