10-PY07HVA100RG11-L986F58Y [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;型号: | 10-PY07HVA100RG11-L986F58Y |
厂家: | VINCOTECH |
描述: | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
文件: | 总28页 (文件大小:8657K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-PY07HVA100RG11-L986F58Y
datasheet
flowPACK 1 H6.5
650 V / 100 A
Features
flow 1 12 mm housing
● Innovative H6.5 topology
● Optimized for bidirectional operation
● Integrated temperature sensor
● Low inductance housing
Schematic
Target applications
● Energy Storage Systems
Types
● 10-PY07HVA100RG11-L986F58Y
Copyright Vincotech
1
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
650
76
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
400
120
±30
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Buck Diode
VRRM
Peak repetitive reverse voltage
650
70
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
400
96
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
Collector-emitter voltage
650
58
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
300
88
A
Ptot
W
V
VGES
Gate-emitter voltage
±30
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
650
70
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
400
96
A
Ptot
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
8,17
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
5
0,066
100
25
5
6
7
V
V
25
1,5
1,66
1,7
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
0,02
0,4
mA
µA
Ω
30
None
8400
208
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
30
25
25
Reverse transfer capacitance
Gate charge
158
15
400
100
282
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,79
K/W
25
42,73
41,53
41,67
14,52
14,92
14,93
103,04
115,31
119,96
30,21
41,36
44,75
0,571
0,837
1,01
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
400
100
tf
125
150
25
ns
QrFWD=3,64 µC
QrFWD=5,22 µC
QrFWD=6,18 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,8
Eoff
125
150
2,38
2,53
Copyright Vincotech
4
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,51
1,57
1,54
1,9(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
20
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,99
K/W
25
141,13
161,74
169,56
45,42
62,44
77,61
3,64
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=8417 A/µs
di/dt=7402 A/µs
di/dt=7656 A/µs
Qr
Recovered charge
-5/15
400
100
125
150
25
5,22
μC
6,18
1,35
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
1,82
mWs
A/µs
2,11
5907,97
5991,05
5691,87
(dirf/dt)max
125
150
Copyright Vincotech
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21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
5
0,0504
75
25
5
6
7
V
V
25
1,43
1,58
1,61
1,9(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Thermal
0
650
0
25
25
10
µA
µA
Ω
30
0,2
None
1,08
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
K/W
25
37,23
36,9
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
36,49
9,52
tr
125
150
25
10,48
10,69
88,56
100,27
103,32
32,4
Rgon = 4 Ω
Rgoff = 4 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
400
75
tf
125
150
25
45,14
47,96
0,234
0,346
0,407
1,32
ns
QrFWD=3,02 µC
QrFWD=4,46 µC
QrFWD=5,23 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
1,72
1,83
Copyright Vincotech
6
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,51
1,57
1,54
1,9(1)
VF
IR
Forward voltage
100
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
20
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,99
K/W
25
130,69
140,37
146,24
40,15
63,25
76,18
3,02
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=8479 A/µs
di/dt=7774 A/µs
di/dt=7795 A/µs
Qr
Recovered charge
-5/15
400
75
125
150
25
4,46
μC
5,23
1,14
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
1,5
mWs
A/µs
1,74
6178,82
5259,82
5286,19
(dirf/dt)max
125
150
Copyright Vincotech
7
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
-1
75
50
25
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,792
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,64E-02
1,20E-01
4,13E-01
1,44E-01
4,90E-02
2,15E+00
4,67E-01
1,02E-01
1,52E-02
1,48E-03
Copyright Vincotech
9
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,988
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,23E-02
1,76E-01
5,11E-01
1,81E-01
5,73E-02
4,13E+00
5,84E-01
1,10E-01
1,35E-02
1,86E-03
Copyright Vincotech
11
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Boost Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
200
200
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
150
100
50
150
100
50
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
70
10
60
50
40
30
20
10
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
8
9
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
14
μs
V
D =
tp / T
1,078
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
8,14E-02
1,88E-01
6,08E-01
1,59E-01
4,09E-02
2,67E+00
3,44E-01
6,67E-02
9,52E-03
8,22E-04
Copyright Vincotech
12
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Boost Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Boost Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,988
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,23E-02
1,76E-01
5,11E-01
1,81E-01
5,73E-02
4,13E+00
5,84E-01
1,10E-01
1,35E-02
1,86E-03
Copyright Vincotech
14
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Thermistor Characteristics
figure 15.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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10-PY07HVA100RG11-L986F58Y
datasheet
Buck Switching Characteristics
figure 16.
IGBT
figure 17.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
5
4
3
2
1
0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eoff
Eon
Eoff
Eon
Eoff
Eoff
Eon
Eon
Eon
Eon
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
V
Ω
Ω
125 °C
150 °C
400
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 18.
FWD
figure 19.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
V
Ω
125 °C
150 °C
400
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
16
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10-PY07HVA100RG11-L986F58Y
datasheet
Buck Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
-1
10
-1
10
td(on)
tf
tr
tf
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
-5/15
4
°C
V
150
400
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
-5/15
100
Ω
Ω
4
figure 22.
FWD
figure 23.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
V
Ω
125 °C
150 °C
400
-5/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
17
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Buck Switching Characteristics
figure 24.
FWD
figure 25.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
12
10
8
8
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
6
Qr
4
Qr
2
0
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
V
Ω
125 °C
150 °C
400
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 26.
FWD
figure 27.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
225
200
175
150
125
100
75
200
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
V
Ω
125 °C
150 °C
400
-5/15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Buck Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
125 °C
150 °C
400
-5/15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 30.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
Copyright Vincotech
19
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Boost Switching Characteristics
figure 31.
IGBT
figure 32.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eoff
Eoff
Eoff
Eon
Eoff
Eon
Eon
Eon
Eon
Eon
0
25
50
75
100
125
150
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
V
Ω
Ω
125 °C
150 °C
400
-5/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 33.
FWD
figure 34.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
V
Ω
125 °C
150 °C
400
-5/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
20
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Boost Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(on)
td(off)
tf
td(on)
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
400
-5/15
4
°C
V
150
400
-5/15
75
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 37.
FWD
figure 38.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
V
Ω
125 °C
150 °C
400
-5/15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Boost Switching Characteristics
figure 39.
FWD
figure 40.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
9
8
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
150
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
V
Ω
125 °C
150 °C
400
-5/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 41.
FWD
figure 42.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
200
175
150
125
100
75
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
25
50
75
100
125
150
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
V
Ω
125 °C
150 °C
400
-5/15
75
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Boost Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
15000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
150
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
400
-5/15
4
V
V
Ω
125 °C
150 °C
400
-5/15
75
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 45.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
Copyright Vincotech
23
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Switching Definitions
figure 46.
IGBT
figure 47.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
24
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Switching Definitions
figure 50.
FWD
figure 51.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
25
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PY07HVA100RG11-L986F58Y
10-PY07HVA100RG11-L986F58Y-/7/
10-PY07HVA100RG11-L986F58Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
0
Function
G14
52,2
49,2
2
S14
3
not assembled
4
26,1
23,1
3
0
Therm2
5
0
Therm1
S12
6
0
7
0
0
G12
DC+
DC+
DC-1
DC-1
G11
S11
8
0
8
9
0
10,5
17,7
20,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
20,2
17,7
10,5
8
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
0
0
0
3
10
G21
S21
13
20,35
22,85
29,35
31,85
39,2
42,2
49,2
52,2
52,2
52,2
52,2
52,2
26,1
Ph2
Ph2
Ph1
Ph1
S22
G22
S13
G13
DC-2
DC-2
DC+
DC+
A20
22,1
Copyright Vincotech
26
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Pinout
DC+
8,9,26,27
T12
T14
D20
G12
7
G14
1
S12
6
S14
2
D22
D21
T22
Ph1
18,19
T21
S21
15
G21
14
G22
21
S22
20
A20
28
Ph2
16,17
T11
T13
D14
D12
G11
12
G13
23
S13
22
S11
13
Rt
10,11
DC-1
24,25
DC-2
Therm2
4
Therm1
5
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T13, T12, T14
IGBT
FWD
650 V
650 V
650 V
650 V
100 A
100 A
75 A
Buck Switch
Buck Diode
Boost Switch
Boost Diode
Thermistor
D22, D21
T21, T22
IGBT
D12, D14, D20
Rt
FWD
100 A
Thermistor
Copyright Vincotech
27
21 Jan. 2022 / Revision 1
10-PY07HVA100RG11-L986F58Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY07HVA100RG11-L986F58Y-D1-14
21 Jan. 2022
Initial Release
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
21 Jan. 2022 / Revision 1
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