10-PY07HVA100S5-L986F08Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 10-PY07HVA100S5-L986F08Y |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总30页 (文件大小：2878K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
650 V / 100 A
flow PACK 1 H6.5
Features
flow 1 12 mm housing
● For one-phase solar applications
● Innovative H6.5 topology
● LVRT (Low voltage ride throught) capability
● Fast IGBT S5
● Chipset optimized for switching frequencies up to 25kHz
● NTC
Solder Pin
Press-fit Pin
Schematic
Target applications
● Solar Inverters
● Special Application
Types
● 10-FY07HVA100S5-L986F08
● 10-PY07HVA100S5-L986F08Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Low Buck Switch / High Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
82
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
300
117
±20
175
A
Ts = 80 °C
W
V
Maximum junction temperature
°C
Copyright Vincotech
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10-PY07HVA100S5-L986F08Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
650
55
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj limited by Tjmax
Tj = Tjmax
150
71
A
W
°C
Tjmax
Maximum Junction Temperature
175
Boost Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
650
85
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
225
95
A
W
V
±20
175
Maximum junction temperature
°C
Low Boost Diode / High Boost Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
55
V
A
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj limited by Tjmax
Tj = Tjmax
150
71
A
W
°C
Tjmax
Maximum Junction Temperature
175
Copyright Vincotech
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
6000
2500
V
Visol
Isolation voltage
AC Voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
7,99
mm
mm
mm
Solder pin
Clearance
Press-fit pin
8,3
Comparative Tracking Index
*100 % tested in production
CTI
> 200
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10-PY07HVA100S5-L986F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Low Buck Switch / High Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,001
100
25
3,2
4
4,8
V
V
25
1,39
1,48
1,51
1,75
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
100
200
µA
nA
Ω
20
none
6200
176
24
Cies
Coes
Cres
Qg
Output capacitance
f = 1 MHz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
15
520
100
240
nC
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,81
K/W
Dynamic
25
45
42
44
td(on)
125
150
25
Turn-on delay time
12
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
11
13
117
131
133
14
Rgoff = 4 Ω
Rgon = 4 Ω
ns
td(off)
Turn-off delay time
Fall time
-5/15
350
106
tf
21
27
1,058
1,741
1,487
0,655
1,119
1,544
Qr
FWD
Qr
FWD
Qr
FWD
= 3,1 μC
= 5,6 μC
= 6,3 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
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10-PY07HVA100S5-L986F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1,53
1,49
1,47
1,92
3,8
VF
Ir
125
150
Forward voltage
75
V
Reverse leakage current
650
25
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,34
K/W
25
93
IRRM
125
150
25
141
142
56
Peak recovery current
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
93
98
ns
di/dt = 6500 A/μs
di/dt = 8158 A/μs
di/dt = 8119 A/μs
3,115
5,594
6,286
0,779
1,278
1,630
1463
2593
2821
Recovered charge
-5/15
350
106
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
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10-PY07HVA100S5-L986F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,001
75
25
4,2
5
5,8
V
V
25
1,10
1,08
1,09
1,45
Collector-emitter saturation voltage
VCEsat
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
40
µA
nA
Ω
20
100
none
11625
30
Cies
Cres
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,00
K/W
Dynamic
25
203
206
201
td(on)
Turn-on delay time
125
150
25
12
tr
Rise time
125
150
25
13
13
240
Rgoff = 8 Ω
Rgon = 8 Ω
ns
td(off)
Turn-off delay time
Fall time
125
150
25
125
150
25
125
150
25
125
150
270
262
79
221
±15
350
76
tf
282
1,017
0,973
0,498
3,000
4,345
5,018
Qr
FWD
Qr
FWD
Qr
FWD
= 2,4 μC
= 4,4 μC
= 5,2 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
Copyright Vincotech
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10-PY07HVA100S5-L986F08Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Low Boost Diode / High Boost Diode
Static
25
1,53
1,49
1,47
1,92
3,8
VF
Ir
125
150
Forward voltage
75
V
Reverse leakage current
650
25
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,34
K/W
25
87
IRRM
125
150
25
106
112
52
Peak recovery current
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
82
94
ns
di/dt = 8281 A/μs
di/dt = 7642 A/μs
di/dt = 6766 A/μs
2,413
4,386
5,234
0,449
1,038
1,265
4168
1586
2135
Recovered charge
±15
350
76
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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datasheet
Low Buck Switch / High Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,81
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
4,67E-02
8,18E-02
3,18E-01
2,26E-01
8,12E-02
2,54E-02
3,27E-02
3,86E+00
7,09E-01
1,25E-01
4,22E-02
5,84E-03
5,78E-04
1,79E-04
Copyright Vincotech
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10-PY07HVA100S5-L986F08Y
datasheet
Low Buck Switch / High Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G)
I C = f(VCE)
I
I
I
I
V
V
V
V
D =
single pulse
80 ºC
IC=
100
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
ºC
Copyright Vincotech
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10-PY07HVA100S5-L986F08Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
1,34
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,84E-02
1,57E-01
5,86E-01
3,27E-01
1,27E-01
8,12E-02
3,64E+00
5,25E-01
1,06E-01
2,57E-02
4,84E-03
4,11E-04
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
102
tp(s)
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D
=
tp
1,00
IGBT thermal model values
(K/W)
/ T
VCE
=
Tj:
R th(j-s)
=
K/W
R
τ
(s)
8,80E-02
1,67E-01
5,38E-01
1,47E-01
3,80E-02
1,88E-02
2,68E+00
3,70E-01
8,09E-02
1,56E-02
3,42E-03
5,45E-04
Copyright Vincotech
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datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
I
I
V
V
V
I
V
D =
single pulse
80 ºC
IC=
75
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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datasheet
Low Boost Diode / High Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
1,34
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,84E-02
1,57E-01
5,86E-01
3,27E-01
1,27E-01
8,12E-02
3,64E+00
5,25E-01
1,06E-01
2,57E-02
4,84E-03
4,11E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T)
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datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
-5/15
4
V
V
Ω
Ω
j
:
350
-5/15
106
V
V
A
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
4
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
-5/15
4
V
V
Ω
:
350
-5/15
106
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
Tj =
150
350
-5/15
4
°C
V
Tj =
150
350
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
-5/15
106
V
VGE
R gon
R goff
VGE
I C
Ω
Ω
A
4
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
At
VCE
=
350
-5/15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
350
-5/15
106
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
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datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
V
V
Ω
25 °C
125 °C
150 °C
350
-5/15
106
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
-5/15
4
:
Tj
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
350
-5/15
4
V
V
Ω
25 °C
125 °C
150 °C
350
-5/15
106
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE =
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
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datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
diF
/
dt
t
t
t
t
t
t
t
t
dirr/dt
i
i
i
i
dir r
/dt
i
i
i
i
At
VCE
=
350
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
350
-5/15
106
V
V
A
25 °C
125 °C
150 °C
-5/15
4
:
Tj
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj
=
=
=
175
4
°C
Ω
R gon
R goff
4
Ω
Copyright Vincotech
17
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Buck Switching Definitions
General conditions
=
=
=
125 °C
4 Ω
T j
Rgon
R goff
4 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
VGE
IC
IC
VCE
tEoff
VGE
VCE
tEon
-5
V
-5
V
VGE (0%) =
VGE (0%) =
15
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
350
V
350
107
0,042
0,142
V
107
A
A
t doff
t Eoff
=
=
-0,697
0,274
μs
μs
tdon
tEon
=
=
μs
μs
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
350
V
A
350
V
A
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
107
107
0,021
μs
0,011
μs
tr
=
Copyright Vincotech
18
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Eoff
Eon
Poff
tEoff
tEon
37,35
1,12
0,27
kW
mJ
μs
37,35
0,22
0,14
kW
mJ
μs
P off (100%) =
Eoff (100%) =
P on (100%) =
Eon (100%) =
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
350
V
VF (100%) =
I F (100%) =
I RRM (100%) =
107
A
-141
0,086
A
t rr
=
μs
Copyright Vincotech
19
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Buck Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
Erec
IF
Qr
tErec
Prec
107
A
37,35
-1,69
0,16
kW
mJ
μs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
5,56
0,16
μC
μs
t Qr
=
tErec =
Copyright Vincotech
20
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
125 °C
150 °C
350
±15
76
V
V
A
VCE
VGE
=
=
=
=
350
±15
8
V
V
Ω
Ω
T
j
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
350
±15
8
V
V
Ω
:
350
±15
76
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
21
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
350
±15
8
°C
150
350
±15
76
°C
V
Tj =
Tj =
VCE
=
=
=
=
V
V
Ω
Ω
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
At
VCE
=
350
±15
8
V
V
Ω
25 °C
At
VCE
=
350
V
V
A
25 °C
125 °C
150 °C
:
Tj
125 °C
150 °C
±15
76
:
Tj
VGE
R gon
=
=
VGE
I C
=
=
Copyright Vincotech
22
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
350
25 °C
V
V
Ω
350
±15
76
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
±15
8
:
Tj
125 °C
150 °C
=
:
Tj
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
350
25 °C
At
VCE
=
V
V
Ω
At
VCE
=
350
±15
76
V
V
A
25 °C
125 °C
150 °C
±15
8
:
Tj
125 °C
150 °C
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
23
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon
)
diF/dt
dir r/dt
d
iF
/
d
t
t
t
t
t
t
t
t
t
i
i
i
i
dir r
/dt
i
i
i
i
25 °C
At
VCE
=
350
±15
8
V
V
Ω
At
VCE
VGE
I C
=
350
±15
76
V
V
A
25 °C
125 °C
150 °C
:
Tj
125 °C
150 °C
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
24
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
8 Ω
T j
Rgon
R goff
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon
=
integrating time for Eon)
tdoff
IC
VGE
IC
VCE
VGE
tEoff
VCE
tEon
VGE (0%) =
-15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
350
76
V
350
76
V
A
A
0,270
0,657
μs
μs
0,206
0,322
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
VCE
IC
tr
IC
tf
350
76
V
350
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
A
76
A
0,221
μs
0,013
μs
tr
=
Copyright Vincotech
25
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eon
Eoff
Pon
Poff
tEon
tEoff
P off (100%) =
Eoff (100%) =
26,62
4,35
0,66
kW
mJ
μs
P on (100%) =
Eon (100%) =
26,62
0,97
0,32
kW
mJ
μs
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
350
76
V
A
-106
A
0,082
μs
t rr
=
Copyright Vincotech
26
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Boost Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
Erec
Qr
tErec
IF
Prec
76
A
26,62
1,04
0,17
kW
mJ
μs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
4,39
0,17
μC
μs
t Qr
=
tErec =
Copyright Vincotech
27
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12 mm housing with solder pins
without thermal paste 12 mm housing with press-fit pins
Ordering Code
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
0
Function
G14
52,2
49,2
1
2
S14
3
Not assembled
4
26,1
23,1
3
0
Therm2
5
0
Therm1
S12
G12
DC+
DC+
DC-1
DC-1
G11
S11
G21
S21
Ph2
6
0
7
0
0
8
0
8
9
0
10,5
17,7
20,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
10
11
12
13
14
15
16
17
18
19
20
21
22
0
0
0
3
10
13
20,35
22,85
29,35
31,85
39,2
42,2
49,2
Ph2
Ph1
Ph1
S22
G22
S13
23
24
25
26
27
28
52,2
52,2
52,2
52,2
52,2
26,1
28,2
20,2
17,7
10,5
8
G13
DC-2
DC-2
DC+
DC+
A20
22,1
Copyright Vincotech
28
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
650 V
650 V
650 V
650 V
650 V
650 V
Current
Function
Comment
T11, T13
T12, T14
D21, D22
T21, T22
D12, D14
D20
100 A
100 A
75 A
75 A
75 A
75 A
Low Buck Switch
High Buck Switch
Buck Diode
IGBT
FWD
IGBT
Boost Switch
FWD
Low Boost Diode
High Boost Diode
Thermistor
FWD
Rt
NTC
Copyright Vincotech
29
11 Aug. 2017 / Revision 1
10-FY07HVA100S5-L986F08
10-PY07HVA100S5-L986F08Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-xY07HVA100S5-L986F08x-D1-14
11 Aug. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
11 Aug. 2017 / Revision 1
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