10-PY07NIA100S503-M515F58Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;型号: | 10-PY07NIA100S503-M515F58Y |
厂家: | VINCOTECH |
描述: | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
文件: | 总29页 (文件大小:5655K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-PY07NIA100S503-M515F58Y
datasheet
flowNPC 1
650 V / 100 A
Features
flow 1 12 mm housing
● NPC inverter topology
● Optimized for 1200 Vdc applications
● High-speed IGBT
Low inductive design
Integrated NTC
●
●
Schematic
Target applications
● Solar Inverters
● UPS
Types
● 10-PY07NIA100S503-M515F58Y
Copyright Vincotech
1
02 Nov. 2020 / Revision 1
10-PY07NIA100S503-M515F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
650
90
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
300
133
±20
175
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Buck Diode
VRRM
Peak repetitive reverse voltage
650
76
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
106
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Switch
VCES
Collector-emitter voltage
650
129
450
133
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
02 Nov. 2020 / Revision 1
Copyright Vincotech
2
10-PY07NIA100S503-M515F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
650
85
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
122
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Inv. Diode
VRRM
Peak repetitive reverse voltage
650
85
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
200
122
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
min. 12,7
8,09
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
02 Nov. 2020 / Revision 1
Copyright Vincotech
3
10-PY07NIA100S503-M515F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,001
100
25
3,2
4
4,8
V
V
25
1,39
1,48
1,51
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
100
200
µA
nA
Ω
20
None
6200
176
24
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
VCC = 520 V
15
100
240
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,72
K/W
25
72
74
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
73
11
tr
125
150
25
11
12
Rgon = 4 Ω
Rgoff = 4 Ω
98
td(off)
Turn-off delay time
Fall time
125
150
25
115
118
14,78
26,49
28,9
0,661
0,951
1,03
0,903
1,4
ns
±15
350
100
tf
125
150
25
ns
QrFWD=3,14 µC
QrFWD=6,11 µC
QrFWD=6,87 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
1,53
02 Nov. 2020 / Revision 1
Copyright Vincotech
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10-PY07NIA100S503-M515F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,6
1,92(1)
VF
IR
Forward voltage
100
125
150
1,58
1,57
V
Reverse leakage current
Thermal
Vr = 650 V
25
5,3
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,9
K/W
25
113,29
146,96
154,89
48,1
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
82,23
92,26
3,14
ns
di/dt=10159 A/µs
di/dt=8829 A/µs
di/dt=8697 A/µs
Qr
Recovered charge
±15
350
100
125
150
25
6,11
μC
6,87
0,837
1,63
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1,81
4040
3052
3359
(dirf/dt)max
125
150
02 Nov. 2020 / Revision 1
Copyright Vincotech
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10-PY07NIA100S503-M515F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,002
150
25
4,2
5
5,8
V
V
25
1,1
1,45(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,09
1,09
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
80
µA
nA
Ω
20
200
None
23250
60
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
520
150
872
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,72
K/W
25
205,8
205,2
205
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
10,4
tr
125
150
25
12,4
12,8
Rgon = 4 Ω
Rgoff = 4 Ω
302,2
346
td(off)
Turn-off delay time
Fall time
125
150
25
ns
372
±15
350
90
56,75
93,58
111,01
0,58
tf
125
150
25
ns
QrFWD=4,32 µC
QrFWD=8,37 µC
QrFWD=9,5 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
0,586
0,605
4,57
mWs
mWs
Eoff
125
150
6,97
7,51
02 Nov. 2020 / Revision 1
Copyright Vincotech
6
10-PY07NIA100S503-M515F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,18
1,78
1,57
1,82(1)
1,2
VF
IR
Forward voltage
100
V
150
Reverse leakage current
Vr = 650 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,78
K/W
25
104,99
132,31
139,28
133,73
193,51
202,62
4,32
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=10304 A/µs
di/dt=8191 A/µs
di/dt=8639 A/µs
Qr
Recovered charge
±15
350
90
125
150
25
8,37
μC
9,5
1,08
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,36
mWs
A/µs
2,7
7314
3676
3353
(dirf/dt)max
125
150
02 Nov. 2020 / Revision 1
Copyright Vincotech
7
10-PY07NIA100S503-M515F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Sw. Inv. Diode
Static
25
1,18
1,78
1,57
1,82(1)
1,2
VF
IR
Forward voltage
100
V
150
Reverse leakage current
Vr = 650 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,78
K/W
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
02 Nov. 2020 / Revision 1
Copyright Vincotech
8
10-PY07NIA100S503-M515F58Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
VGE
:
7 V
8 V
250
200
150
100
50
250
200
150
100
50
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
100
10
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,715
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
7,52E-02
1,31E-01
3,01E-01
1,21E-01
4,30E-02
4,35E-02
1,73E+00
2,44E-01
6,32E-02
1,39E-02
3,50E-03
3,33E-04
02 Nov. 2020 / Revision 1
Copyright Vincotech
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10-PY07NIA100S503-M515F58Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
02 Nov. 2020 / Revision 1
Copyright Vincotech
10
10-PY07NIA100S503-M515F58Y
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,9
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,42E-02
1,41E-01
3,41E-01
1,94E-01
9,09E-02
5,85E-02
3,64E+00
5,85E-01
1,04E-01
2,64E-02
6,04E-03
5,72E-04
02 Nov. 2020 / Revision 1
Copyright Vincotech
11
10-PY07NIA100S503-M515F58Y
datasheet
Boost Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
400
400
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
300
200
100
0
300
200
100
0
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
125
10
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,715
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,29E-01
1,33E-01
3,21E-01
6,42E-02
5,12E-02
1,68E-02
2,09E+00
4,46E-01
8,45E-02
2,97E-02
7,88E-03
1,62E-03
02 Nov. 2020 / Revision 1
Copyright Vincotech
12
10-PY07NIA100S503-M515F58Y
datasheet
Boost Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
02 Nov. 2020 / Revision 1
Copyright Vincotech
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10-PY07NIA100S503-M515F58Y
datasheet
Boost Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,78
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
5,76E-02
8,79E-02
2,14E-01
2,31E-01
1,16E-01
3,20E-02
4,19E-02
5,42E+00
1,09E+00
1,59E-01
4,95E-02
1,05E-02
2,39E-03
4,10E-04
02 Nov. 2020 / Revision 1
Copyright Vincotech
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datasheet
Boost Sw. Inv. Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
300
250
200
150
100
50
10
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,78
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
5,76E-02
8,79E-02
2,14E-01
2,31E-01
1,16E-01
3,20E-02
4,19E-02
5,42E+00
1,09E+00
1,59E-01
4,95E-02
1,05E-02
2,39E-03
4,10E-04
02 Nov. 2020 / Revision 1
Copyright Vincotech
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datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
02 Nov. 2020 / Revision 1
Copyright Vincotech
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datasheet
Buck Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eon
Eoff
Eoff
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eoff
Eon
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
Ω
125 °C
150 °C
350
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,25
2,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
02 Nov. 2020 / Revision 1
Copyright Vincotech
17
10-PY07NIA100S503-M515F58Y
datasheet
Buck Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
-1
10
-1
10
tf
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
4
°C
V
150
350
±15
100
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
02 Nov. 2020 / Revision 1
Copyright Vincotech
18
10-PY07NIA100S503-M515F58Y
datasheet
Buck Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
12
10
8
8
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
6
Qr
Qr
4
2
0
0
25
50
75
100
125
150
175
200
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
200
175
150
125
100
75
200
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
25
50
75
100
125
150
175
200
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
100
V
125 °C
150 °C
Tj:
Tj:
V
A
02 Nov. 2020 / Revision 1
Copyright Vincotech
19
10-PY07NIA100S503-M515F58Y
datasheet
Buck Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
15000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
150
175
200
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
125 °C
150 °C
350
±15
100
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
225
IC MAX
200
175
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
02 Nov. 2020 / Revision 1
Copyright Vincotech
20
10-PY07NIA100S503-M515F58Y
datasheet
Boost Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
12,5
10,0
7,5
8
7
6
5
4
3
2
1
0
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
5,0
Eon
Eon
Eon
2,5
Eon
Eon
Eon
0,0
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
125 °C
150 °C
350
±15
90
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
Ω
Ω
4
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
125 °C
150 °C
350
±15
90
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
02 Nov. 2020 / Revision 1
Copyright Vincotech
21
10-PY07NIA100S503-M515F58Y
datasheet
Boost Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(off)
td(on)
tf
tf
-1
10
-1
10
tr
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
150
175
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
4
°C
150
350
±15
90
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
4
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
150
175
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
125 °C
150 °C
350
±15
90
V
125 °C
150 °C
Tj:
Tj:
V
A
Ω
02 Nov. 2020 / Revision 1
Copyright Vincotech
22
10-PY07NIA100S503-M515F58Y
datasheet
Boost Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
15,0
12,5
10,0
7,5
12
10
8
Qr
Qr
Qr
Qr
6
Qr
Qr
5,0
4
2,5
2
0,0
0
0,0
0
25
50
75
100
125
150
175
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
125 °C
150 °C
350
±15
90
V
125 °C
150 °C
Tj:
Tj:
V
A
Ω
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
175
150
125
100
75
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
IRM
50
50
25
25
0
0
0,0
0
25
50
75
100
125
150
175
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
125 °C
150 °C
350
±15
90
V
125 °C
150 °C
Tj:
Tj:
V
A
Ω
02 Nov. 2020 / Revision 1
Copyright Vincotech
23
10-PY07NIA100S503-M515F58Y
datasheet
Boost Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
25
50
75
100
125
150
175
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
90
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
350
IC MAX
300
250
200
150
100
50
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
4
°C
Ω
Rgon
Rgoff
=
=
4
Ω
02 Nov. 2020 / Revision 1
Copyright Vincotech
24
10-PY07NIA100S503-M515F58Y
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
02 Nov. 2020 / Revision 1
Copyright Vincotech
25
10-PY07NIA100S503-M515F58Y
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
02 Nov. 2020 / Revision 1
Copyright Vincotech
26
10-PY07NIA100S503-M515F58Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
With thermal paste
10-PY07NIA100S503-M515F58Y
10-PY07NIA100S503-M515F58Y-/3/
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
NTC1
NTC2
E3
52,2
52,2
36,2
33,2
33,2
9,2
6,2
6,2
2,7
0
6,9
0
2
3
6,75
7,9
4
G3-a
G3-b
E4
5
4,9
6
5,75
6,9
7
G4-a
G4-b
DC-
8
3,9
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
0
DC-
2,7
0
2,7
DC-
2,7
DC-
2,7
0
5,4
DC-
5,4
DC-
2,7
0
12,75
12,75
15,45
15,45
22,8
22,8
25,5
25,5
28,2
28,2
22,45
21,3
24,3
22,15
21
GND
GND
GND
GND
DC+
DC+
DC+
DC+
DC+
DC+
E1
2,7
0
2,7
0
2,7
0
2,7
0
18,3
21,3
21,3
43
G1-b
G1-a
E2
46
G2-b
G2-a
OUT
OUT
OUT
OUT
OUT
OUT
OUT
46
24
52,2
49,5
52,2
49,5
52,2
49,5
52,2
20,1
22,8
22,8
25,5
25,5
28,2
28,2
02 Nov. 2020 / Revision 1
Copyright Vincotech
27
10-PY07NIA100S503-M515F58Y
datasheet
Pinout
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T4
D5, D6
T2, T3
D4, D1
D3, D2
NTC
IGBT
FWD
650 V
650 V
650 V
650 V
650 V
100 A
100 A
150 A
100 A
100 A
Buck Switch
Buck Diode
IGBT
Boost Switch
Boost Diode
FWD
FWD
Boost Sw. Inv. Diode
Thermistor
Thermistor
02 Nov. 2020 / Revision 1
Copyright Vincotech
28
10-PY07NIA100S503-M515F58Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY07NIA100S503-M515F58Y-D1-14
2 Nov. 2020
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
02 Nov. 2020 / Revision 1
Copyright Vincotech
29
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