10-PY07NIB080SM03-L095F03Y [VINCOTECH]
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
| 型号： | 10-PY07NIB080SM03-L095F03Y |
| 厂家： | 
VINCOTECH |
| 描述： | High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge |
| 文件： | 总30页 (文件大小：3535K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
flowNPC 1
650 V / 80 A
Features
flow 1 12 mm housing
● Neutral Point Clamped Topology (I-Type)
● 4 quadrant operation, very high speed
● Integrated DC capacitor and temperature sensor
● Kelvin Emitter for improved switching performance
● Press-fit pins and solder pins
Schematic
Target applications
● Power Supply
● Solar Inverters
● UPS
Types
● 10-FY07NIB080SM03-L095F03
● 10-PY07NIB080SM03-L095F03Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch / Boost Switch
VCES
Collector-emitter voltage
650
60
V
A
IC
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Tjmax
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
240
109
±20
175
A
W
V
Maximum junction temperature
°C
Copyright Vincotech
1
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
74
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
160
103
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
108
240
140
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
63
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
Ptot
120
98
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Top
Maximum DC voltage
630
V
Operation Temperature
-55…+125
°C
Copyright Vincotech
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21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
6000
2500
V
Visol
Isolation voltage
AC Voltage
tp = 1 min
V
Creepage distance
Clearance
min. 12,7
mm
mm
Solder Pin
8,33
8,15
Press-fit Pin
Comparative Tracking Index
*100 % tested in production
CTI
> 200
Copyright Vincotech
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21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0008 25
25
3,3
4
4,7
V
V
1,64
1,89
1,95
2,22
Collector-emitter saturation voltage
VCEsat
15
80
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
80
µA
nA
Ω
20
240
none
5000
80
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
18
15
520
80
190
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,87
K/W
Dynamic
25
46
47
48
Turn-on delay time
td(on)
125
150
25
7
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
8
9
125
147
151
6
Rgon = 8 Ω
Rgoff = 8 Ω
ns
Turn-off delay time
Fall time
td(off)
-5 / 15
350
40
tf
7
7
0,461
0,686
0,735
0,250
Qr
FWD
Qr
FWD
Qr
FWD
= 1,7 μC
= 3,3 μC
= 3,8 μC
Turn-on energy (per pulse)
Eon
mWs
Turn-off energy (per pulse)
Eoff
125
150
0,364
0,394
Copyright Vincotech
4
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1,52
1,47
1,45
1,92
4,2
VF
IR
Forward voltage
80
125
150
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,92
K/W
Dynamic
25
50
68
73
IRRM
125
150
25
Peak recovery current
A
52
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
79
90
ns
di/dt = 3712 A/μs
di/dt = 3734 A/μs
di/dt = 3515 A/μs
1,693
3,313
3,815
0,360
0,765
0,884
1317
1064
1003
-5 / 15
350
40
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Copyright Vincotech
5
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0008 25
25
3,3
4
4,7
V
V
1,64
1,89
1,95
2,22
Collector-emitter saturation voltage
VCEsat
15
80
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
80
µA
nA
Ω
20
240
none
5000
80
Cies
Coes
Cres
Qg
Output capacitance
f = 1 Mhz
0
25
25
25
pF
Reverse transfer capacitance
Gate charge
18
15
520
80
190
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,87
K/W
Dynamic
25
25
24
45
Turn-on delay time
td(on)
125
150
25
8
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
9
9
173
203
152
4
Rgon = 8 Ω
Rgoff = 8 Ω
ns
Turn-off delay time
Fall time
td(off)
-5 / 15
350
40
tf
5
8
0,593
0,857
0,879
0,232
Qr
FWD
Qr
FWD
Qr
FWD
= 1,8 μC
= 3,8 μC
= 4,3 μC
Turn-on energy (per pulse)
Eon
mWs
Turn-off energy (per pulse)
Eoff
125
150
0,379
0,418
Copyright Vincotech
6
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
1,48
1,40
1,37
1,92
6,4
VF
IR
Forward voltage
120
125
150
V
Reverse leakage current
650
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,68
K/W
Dynamic
25
44
54
60
IRRM
125
150
25
Peak recovery current
A
65
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
86
95
ns
di/dt = 5704 A/μs
di/dt = 4474 A/μs
di/dt = 4573 A/μs
1,795
3,814
4,331
0,351
0,824
0,951
413
-5 / 15
350
40
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
3324
2033
Boost Sw. Protection Diode
Static
25
1,23
1,70
1,59
1,87
0,72
Forward voltage
Reverse leakage current
Thermal
VF
IR
60
V
125
650
25
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,96
K/W
Capacitor (DC)
C
Capacitance
47
nF
%
Tolerance
-10
+10
Climatic category
55/125/56
Copyright Vincotech
7
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
-12
+14
200
2
mW
mW/K
K
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
3950
3998
B-value
K
Vincotech NTC Reference
B
Copyright Vincotech
8
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
240
240
VGE
:
7
V
V
V
I
I
8
9
200
200
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
160
120
80
160
120
80
40
40
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
=
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
80
I
Z
60
10-1
40
20
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
1
2
3
4
5
6
7
VG E (V)
tp
=
100
3634
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,87
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,42E-01
3,44E-01
1,79E-01
1,18E-01
3,80E-02
5,36E-02
7,24E-01
1,23E-01
3,69E-02
9,05E-03
2,24E-03
3,22E-04
Copyright Vincotech
9
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
15
1000
130 V
V
I
12,5
100
520 V
10
7,5
5
10
1
0,1
2,5
0
0
0,01
1
50
100
150
200
10
100
1000
QG (nC)
VC E (V)
D =
single pulse
80 ºC
I C
=
80
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
10
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
240
200
160
120
80
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
40
10-2
0
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,92
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
4,25E-02
1,12E-01
3,86E-01
2,10E-01
1,09E-01
6,17E-02
4,35E+00
6,58E-01
1,10E-01
3,30E-02
7,30E-03
8,74E-04
Copyright Vincotech
11
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
240
240
VGE
:
7
V
V
V
I
I
8
9
200
200
10
11
12
13
14
15
16
17
V
V
V
V
V
V
V
V
160
120
80
160
120
80
40
40
0
0
0
0
1
2
3
4
5
1
2
3
4
5
VC E (V)
VC E (V)
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
Tj
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
V
Tj:
=
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
80
I
Z
60
10-1
40
20
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-5
0
0
10-4
10-3
10-2
10-1
100
101
tp(s)
102
1
2
3
4
5
6
7
VG E (V)
tp
=
100
3634
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,87
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,42E-01
3,44E-01
1,79E-01
1,18E-01
3,80E-02
5,36E-02
7,24E-01
1,23E-01
3,69E-02
9,05E-03
2,24E-03
3,22E-04
Copyright Vincotech
12
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Boost Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
15
1000
130 V
V
I
12,5
100
520 V
10
7,5
5
10
1
0,1
2,5
0
0
0,01
1
50
100
150
200
10
100
1000
QG (nC)
VC E (V)
D =
single pulse
80 ºC
I C
=
80
A
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
13
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
400
Z
300
200
100
0
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
0,5
1
1,5
2
2,5
3
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,68
Tj:
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
3,92E-02
8,22E-02
2,55E-01
1,58E-01
7,12E-02
2,99E-02
4,25E-02
5,75E+00
9,83E-01
1,51E-01
4,02E-02
8,23E-03
1,81E-03
2,74E-04
Copyright Vincotech
14
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
180
150
120
90
60
30
0
Z
10-1
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
VF (V)
tp
=
250
μs
25 °C
D =
tp / T
0,96
Tj:
125 °C
R th(j-s)
=
K/W
FWD thermal model values
R (K/W)
τ (s)
7,25E-02
1,28E-01
3,41E-01
2,28E-01
1,27E-01
6,83E-02
3,37E+00
5,13E-01
8,29E-02
1,76E-02
3,85E-03
5,32E-04
Thermistor Characteristics
figure 1.
Thermistor
Typical Thermistor resistance values
Typical NTC characteristic
as a function of temperature
R = f(T)
NTC-typical temperature characteristic
25000
20000
15000
10000
5000
0
25
50
75
100
125
T (°C)
Copyright Vincotech
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21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
1,2
2
Eon
Eon
E
E
Eon
Eon
0,9
1,5
Eon
Eoff
Eoff
Eon
0,6
0,3
0
1
0,5
0
Eoff
Eoff
Eoff
Eoff
0
20
40
60
25 °C
80
0
10
20
30
25 °C
40
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
=
350
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
40
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
-5 / 15
R gon
R goff
8
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
1,2
1,6
E
E
Erec
Erec
0,9
1,2
Erec
Erec
0,6
0,3
0
0,8
0,4
0
Erec
Erec
0
10
20
30
40
0
20
40
60
80
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
-5 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
40
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
16
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Buck Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
td(off)
td(off)
td(on)
0,1
0,1
td(on)
tr
tr
0,01
0,01
tf
tf
0,001
0,001
0
10
20
30
40
0
20
40
60
80
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
350
-5 / 15
8
°C
V
Tj =
150
350
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-5 / 15
40
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,12
0,16
trr
trr
t
t
trr
trr
0,09
0,12
trr
trr
0,06
0,03
0
0,08
0,04
0
0
0
20
40
60
80
10
20
30
25 °C
40
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
350
-5 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
40
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
17
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Buck Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
6
4
Qr
Qr
Q
Qr
Qr
Q
5
3
4
3
2
1
2
1
Qr
Qr
0
0
0
0
20
40
60
25 °C
80
10
20
30
25 °C
40
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
350
-5 / 15
8
V
V
Ω
Tj:
VCE=
VGE =
I C=
350
-5 / 15
40
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
100
100
I
I
IRM
80
80
IRM
60
40
20
60
40
20
IRM
IRM
IRM
IRM
0
0
0
0
10
20
30
25 °C
40
Rgo n (Ω)
20
40
60
25 °C
80
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
350
-5 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
40
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
18
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Buck Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
10000
6000
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
5000
8000
4000
3000
2000
1000
6000
4000
2000
0
0
0
0
10
20
30
25 °C
40
Rgon (Ω)
20
40
60
80
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
350
-5 / 15
8
V
V
Ω
Tj:
VCE =
VGE =
I C=
350
-5 / 15
40
V
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
180
IC MAX
I
160
140
120
100
80
I
I
60
40
20
V
0
0
100
200
300
400
500
600
700
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
19
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Buck Switching Definitions
General conditions
T j
=
=
=
125 °C
Rgon
Rgoff
8 Ω
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-5
V
VGE (0%) =
-5
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
350
40
V
350
40
V
A
A
tdoff
=
147
ns
tdon
=
47
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
350
40
7
V
VC (100%) =
I C (100%) =
350
40
8
V
A
A
ns
tr
=
ns
Copyright Vincotech
20
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
350
40
V
I F (100%) =
Q r (100%) =
40
3
A
A
μC
68
A
trr
=
79
ns
Copyright Vincotech
21
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
1,6
2
Eon
Eon
Eon
Eon
E
E
Eon
1,2
1,5
Eon
0,8
0,4
0
1
0,5
0
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
20
40
60
25 °C
80
0
10
20
30
25 °C
40
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
=
350
V
V
Ω
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
40
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
-5 / 15
R gon
R goff
8
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
1,2
1,6
Erec
E
E
Erec
0,9
1,2
Erec
Erec
0,6
0,3
0
0,8
0,4
0
Erec
Erec
0
10
20
30
40
0
20
40
60
80
IC (A)
Rg (Ω)
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
350
-5 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
40
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
22
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Boost Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
1
1
t
t
td(off)
td(off)
td(on)
0,1
0,1
td(on)
tr
tr
0,01
0,01
tf
tf
0,001
0,001
0
10
20
30
40
0
20
40
60
80
Rg (Ω)
IC (A)
With an inductive load at
With an inductive load at
Tj =
150
350
-5 / 15
8
°C
V
Tj =
150
350
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
-5 / 15
40
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon)
0,12
0,16
trr
trr
t
t
trr
trr
0,09
0,12
trr
trr
0,06
0,03
0
0,08
0,04
0
0
0
20
40
60
80
10
20
30
25 °C
40
Rg on (Ω)
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
350
-5 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
40
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
23
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Boost Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
7
5
Qr
Qr
Q
Q
6
Qr
Qr
4
5
4
3
2
1
3
2
1
Qr
Qr
0
0
0
0
20
40
60
25 °C
80
10
20
30
25 °C
40
Rgon (Ω)
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
350
-5 / 15
8
V
V
Ω
Tj:
VCE=
VGE =
I C=
350
-5 / 15
40
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
80
80
I
I
IRM
IRM
60
60
IRM
IRM
IRM
40
20
40
20
IRM
0
0
0
0
10
20
30
25 °C
40
Rgo n (Ω)
20
40
60
25 °C
80
IC (A)
With an inductive load at
With an inductive load at
VCE
=
=
=
350
-5 / 15
8
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
350
-5 / 15
40
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
R gon
Copyright Vincotech
24
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Boost Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
7000
6000
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
6000
i
i
5000
5000
4000
3000
2000
1000
4000
3000
2000
1000
0
0
0
0
10
20
30
25 °C
40
Rgon (Ω)
20
40
60
80
IC (A)
With an inductive load at
25 °C
With an inductive load at
VCE
=
=
=
350
-5 / 15
8
V
V
Ω
Tj:
VCE =
VGE =
I C=
350
-5 / 15
40
V
Tj:
125 °C
150 °C
125 °C
150 °C
VGE
V
A
R gon
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
180
IC MAX
I
160
140
120
100
80
I
I
60
40
20
V
0
0
100
200
300
400
500
600
700
VC E (V)
At
Tj =
125
°C
Ω
R gon
R goff
=
=
8
8
Ω
Copyright Vincotech
25
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Boost Switching Definitions
General conditions
T j
=
=
=
125 °C
Rgon
Rgoff
8 Ω
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
%
%
VGE 90%
VCE 90%
IC
IC
VGE
VGE
VCE
tdon
tEoff
IC 1%
VCE 3%
VCE
IC 10%
VGE 10%
tEon
t (µs)
t (µs)
VGE (0%) =
-5
V
VGE (0%) =
-5
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
350
40
V
350
40
V
A
A
tdoff
=
203
ns
tdon
=
24
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
fitted
%
%
IC
IC
IC 90%
IC 60%
IC 40%
VCE
IC 90%
tr
IC10%
VCE
IC 10%
tf
t (µs)
t (µs)
VC (100%) =
I C (100%) =
tf =
350
40
5
V
VC (100%) =
I C (100%) =
350
40
9
V
A
A
ns
tr
=
ns
Copyright Vincotech
26
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
%
%
Qr
trr
tQr
IF
IF
fitted
IRRM 10%
VF
IRRM 90%
IRRM 100%
t (µs)
t (µs)
VF (100%) =
I F (100%) =
I RRM (100%) =
350
40
V
I F (100%) =
Q r (100%) =
40
4
A
A
μC
54
A
trr
=
86
ns
Copyright Vincotech
27
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Ordering Code & Marking
Version
without thermal paste 12mm housing with Solder pins
with thermal paste 12mm housing with Solder pins
without thermal paste 12mm housing with Pressfit pins
with thermal paste 12mm housing with Pressfit pins
Ordering Code
10-FY07NIB080SM03-L095F03
10-FY07NIB080SM03-L095F03-/3/
10-PY07NIB080SM03-L095F03Y
10-PY07NIB080SM03-L095F03Y-/3/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
6,9
0
Function
Therm1
52,2
52,2
36,2
33,2
33,2
9,2
1
2
Therm2
S4
3
4
6,75
7,9
4,9
5,75
6,9
3,9
0
G14
G18
S2
5
6
7
6,2
G12
G16
DC-
DC-
8
6,2
9
2,7
10
0
0
11
12
13
2,7
0
2,7
2,7
2,7
5,4
DC-
DC-
DC-
14
15
16
17
18
19
20
21
22
0
3
5,4
DC-
12,75
12,75
15,45
15,45
22,8
GND
GND
GND
GND
DC+
DC+
DC+
DC+
0,3
2,7
0
2,7
0
22,8
2,7
0
25,5
25,5
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
2,7
0
28,2
28,2
22,45
21,3
24,3
22,15
21
DC+
DC+
S1
18,3
21,3
21,3
43
G15
G11
S3
46
G17
G13
Ph
46
24
52,2
49,5
52,2
49,5
52,2
49,5
52,2
18,6
21,3
24,75
27,45
20,1
22,8
22,8
25,5
25,5
28,2
28,2
0
Ph
Ph
Ph
Ph
Ph
Ph
T12C
T12C
T11E
T11E
0
28,2
28,2
Copyright Vincotech
28
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
Parallel devices with separate control.
Values refer to complete device.
T11‖T15, T12‖T16
IGBT
650 V
80 A
80 A
80 A
Buck Switch
D11, D12
FWD
IGBT
650 V
650 V
Buck Diode
Parallel devices with separate control.
Values refer to complete device.
T13‖T17, T14‖T18
Boost Switch
Parallel devices with separate control.
Values refer to complete device.
D13‖D17, D14‖D18
D43‖D47, D44‖D48
FWD
FWD
650 V
120 A
60 A
Boost Diode
Parallel devices with separate control.
Values refer to complete device.
650 V
630 V
Boost Sw. Protection Diode
C10, C20
Rt
Capacitor
NTC
Capacitor (DC)
Thermistor
Copyright Vincotech
29
21 Feb. 2019 / Revision 6
10-FY07NIB080SM03-L095F03 /
10-PY07NIB080SM03-L095F03Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Change of Buck and Boost diode and their switching
characteristic
1-2, 4-7, 11, 14,
16-27
10-FY07NIB080SM03-L095F03-D6-14
21 Feb. 2019
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
21 Feb. 2019 / Revision 6
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