10-PY12M3A040SH09-M749F38Y [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 10-PY12M3A040SH09-M749F38Y |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总28页 (文件大小：12032K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PY12M3A040SH09-M749F38Y
datasheet
flow3xMNPC 1
1200 V / 40 A
Features
flow 1 12 mm housing
● Mixed voltage neutral point clamped inverter
● 3 phase mixed voltage component topology
● Reactive power capability
● Low inductance layout
● Integrated NTC
Schematic
Target applications
● Energy Storage Systems
Types
● 10-PY12M3A040SH09-M749F38Y
Copyright Vincotech
1
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
1200
43
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
120
111
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Buck Diode
VRRM
Peak repetitive reverse voltage
650
33
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
48
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
Collector-emitter voltage
650
35
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
120
49
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
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29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
24
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
91
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
130
56
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
7,89
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
3
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0015
40
25
5,3
5,8
6,3
V
25
1,78
1,96
2,29
2,42(1)
15
0
V
125
1200
0
25
25
5
µA
nA
Ω
20
120
None
2330
150
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
130
VCC = 960 V
15
40
185
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,86
K/W
25
69,44
70,08
71,04
18,56
22,08
23,04
140,48
182,08
192,64
43,83
69,88
77,06
0,684
1,15
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
40
tf
125
150
25
ns
QrFWD=0,609 µC
QrFWD=1,7 µC
QrFWD=2,13 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,32
1,1
Eoff
125
150
1,72
1,92
Copyright Vincotech
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29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,98
1,58
1,49
3(1)
VF
IR
Forward voltage
30
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
5
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,98
K/W
25
34,76
41,37
46,28
29,12
98,71
114,44
0,609
1,7
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=2676 A/µs
di/dt=2355 A/µs
di/dt=2064 A/µs
Qr
Recovered charge
±15
350
40
125
150
25
μC
2,13
0,078
0,283
0,366
3624
1823
1739
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0004
40
25
3,2
4
4,8
V
V
25
1,34
1,42
1,46
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
50
µA
nA
Ω
20
100
None
2500
9
Cies
Cres
pF
pF
f = 1 Mhz
0
25
25
Reverse transfer capacitance
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,95
K/W
25
46,4
47,68
47,68
6,4
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
7,36
7,68
Rgon = 8 Ω
Rgoff = 8 Ω
75,2
td(off)
Turn-off delay time
Fall time
125
150
25
93,44
99,52
11,11
45,82
59,12
0,258
0,302
0,31
ns
±15
350
30
tf
125
150
25
ns
QrFWD=0,117 µC
QrFWD=0,113 µC
QrFWD=0,114 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
0,308
0,48
Eoff
125
150
0,543
Copyright Vincotech
6
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,5
1,8(1)
200
VF
IR
Forward voltage
20
125
150
1,88
2,03
V
Reverse leakage current
Thermal
Vr = 1200 V
25
35
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,71
K/W
25
20,18
18,58
18,27
9,68
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
10,7
ns
10,81
0,117
0,113
0,114
8,094x10-3
8,471x10-3
8,739x10-3
di/dt=4341 A/µs
di/dt=3859 A/µs
di/dt=3507 A/µs
Qr
Recovered charge
±15
350
30
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
5981
5094
4970
(dirf/dt)max
125
150
Copyright Vincotech
7
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
-5
5
5
mW
mW/K
K
d
25
1,5
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
125
125
VGE
:
7 V
8 V
9 V
100
75
50
25
0
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
125
μs
°C
25 °C
Tj:
VGE
Tj =
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
40
10
-1
30
20
10
0
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,856
25 °C
Tj:
VCE
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,40E-01
4,53E-01
1,58E-01
7,23E-02
3,25E-02
8,31E-01
1,26E-01
3,84E-02
8,41E-03
8,46E-04
Copyright Vincotech
9
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
80
60
40
20
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,978
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,10E-01
3,94E-01
1,08E+00
2,47E-01
1,46E-01
2,27E+00
2,26E-01
6,33E-02
6,38E-03
1,03E-03
Copyright Vincotech
11
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Boost Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
100
125
VGE
:
7 V
8 V
9 V
100
75
50
25
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
75
50
25
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
40
10
0
30
20
10
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,954
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
1,10E-01
4,76E-01
1,06E+00
2,03E-01
1,10E-01
1,26E+00
1,75E-01
5,29E-02
6,26E-03
5,43E-04
Copyright Vincotech
12
29 Jul. 2021 / Revision 1
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datasheet
Boost Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Boost Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,707
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,11E-01
3,80E-01
9,44E-01
2,12E-01
6,02E-02
1,83E+00
1,78E-01
4,49E-02
5,63E-03
9,17E-04
Copyright Vincotech
14
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datasheet
Thermistor Characteristics
figure 15.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
15
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10-PY12M3A040SH09-M749F38Y
datasheet
Buck Switching Characteristics
figure 16.
IGBT
figure 17.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eon
Eoff
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eon
Eoff
0
10
20
30
40
50
60
70
80
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
Ω
125 °C
150 °C
350
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 18.
FWD
figure 19.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
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29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Buck Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
-1
10
td(on)
tf
tr
-1
10
tf
tr
-2
10
-3
10
-2
10
0
10
20
30
40
50
60
70
80
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
8
°C
V
150
350
±15
40
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 22.
FWD
figure 23.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
40
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
17
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Buck Switching Characteristics
figure 24.
FWD
figure 25.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 26.
FWD
figure 27.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
10
20
30
40
50
60
70
80
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
40
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Buck Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
7000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
6000
5000
4000
3000
2000
1000
0
0
10
20
30
40
50
60
70
80
IC(A)
0
5
10
15
20
25
30
35
R
goff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
40
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 30.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
90
IC MAX
80
70
60
50
40
30
20
10
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
19
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Boost Switching Characteristics
figure 31.
IGBT
figure 32.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(IC)
E = f(Rg)
1,0
0,8
0,6
0,4
0,2
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eoff
Eon
Eon
Eoff
Eon
Eoff
Eoff
Eon
Eoff
Eon
Eon
Eoff
0
10
20
30
40
50
60
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
Ω
125 °C
150 °C
350
±15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 33.
FWD
figure 34.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(IC)
Erec = f(Rg)
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
20
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Boost Switching Characteristics
figure 35.
IGBT
figure 36.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
-1
10
-1
10
td(off)
td(on)
tf
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
8
°C
V
150
350
±15
30
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 37.
FWD
figure 38.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn off gate resistor
trr = f(IC)
trr = f(Rgoff)
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Boost Switching Characteristics
figure 39.
FWD
figure 40.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of turn off gate resistor
Qr = f(IC)
Qr = f(Rgoff)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 41.
FWD
figure 42.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of turn off gate resistor
IRM = f(IC)
IRM = f(Rgoff)
25
20
15
10
5
40
35
30
25
20
15
10
5
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
30
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Boost Switching Characteristics
figure 43.
FWD
figure 44.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn off gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgoff)
8000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
10
20
30
40
50
60
0
5
10
15
20
25
30
35
IC(A)
Rgoff(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
30
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 45.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
90
IC MAX
80
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
°C
Rgon
Rgoff
=
=
8
8
Ω
Ω
Copyright Vincotech
23
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Switching Definitions
figure 46.
IGBT
figure 47.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
24
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Switching Definitions
figure 50.
FWD
figure 51.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
25
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PY12M3A040SH09-M749F38Y
10-PY12M3A040SH09-M749F38Y-/7/
10-PY12M3A040SH09-M749F38Y-/3/
With thermal paste (4,4 W/mK, PTM6000)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
SSSS
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
Function
+DC
GND
G3
52,2
46,2
47
2
0
3
3
4
40,9
44
0
GND
S3
5
3
6
34,9
34,9
28,9
25,9
22,9
22,9
16,9
16,9
10,9
10,9
6
0
-DC
-DC
GND
S7
7
3
8
0
9
2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
0
GND
G7
3
0
+DC
+DC
GND
G11
GND
S11
-DC
S12
G12
S10
G10
G6
3
0
3
0
7,9
3
0
0
4,75
1,75
13,25
13,25
21,25
21,25
30,4
33,4
40,15
40,15
50,45
50,45
0
8,9
7,9
13,7
10,7
10,7
13,7
9,7
9,7
11,2
8,2
10,7
13,7
16,35
19,35
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
28,2
S6
S8
G8
S4
G4
S2
G2
NTC
NTC
OUT3
OUT3
G9
0
5,45
8,25
11,25
14,25
23
S9
S5
26
G5
29
OUT2
OUT2
OUT1
OUT1
G1
31,8
40,4
43,2
46,2
49,2
S1
Copyright Vincotech
26
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Pinout
DC+23
12,13
DC+1
1
T11
T21
38
T31
D13
D23
D33
35
36
43
44
G21
S21
G31
S31
G11
S11
29
30
37
S14
G14
D11
T14
Ph1
41,42
GND1
GND2
GND3
2,4
D12
5
3
24
T13
S13
G13
S24
G24
23
D21
T24
Ph2
39,40
8,10
D22
9
21
T23
S23
G23
S34
G34
11
22
D31
T34
Ph3
33,34
14,16
D32
17
15
T33
S33
G33
T12
28
T22
T32
D14
D24
D34
26
20
Rt
G12
S12
G22
S22
G32
S32
25
27
19
31
32
Therm1
Therm2
DC-12
6,7
18
DC-3
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T21, T22,
IGBT
1200 V
40 A
Buck Switch
Buck Diode
Boost Switch
T31, T32
D11, D12, D21, D22,
D31, D32
FWD
IGBT
650 V
650 V
30 A
40 A
20 A
T13, T14, T23, T24,
T33, T34
D13, D14, D23, D24,
D33, D34
FWD
1200 V
Boost Diode
Thermistor
Rt
Thermistor
Copyright Vincotech
27
29 Jul. 2021 / Revision 1
10-PY12M3A040SH09-M749F38Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 100
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 1 packages see vincotech.com website.
Package data
Package data for flow 1 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PY12M3A040SH09-M749F38Y-D1-14
29 Jul. 2021
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
29 Jul. 2021 / Revision 1
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