10-PZ12B2A075ME-P621L18Y [VINCOTECH]

High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;
10-PZ12B2A075ME-P621L18Y
型号: 10-PZ12B2A075ME-P621L18Y
厂家: VINCOTECH    VINCOTECH
描述:

High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up

文件: 总20页 (文件大小:6856K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
10-PZ12B2A075ME-P621L18Y  
datasheet  
flowBOOST 0 dual SiC  
1200 V / 75 mΩ  
Topology features  
flow 0 12 mm housing  
● Kelvin Emitter for improved switching performance  
● Dual Booster  
● Bypass Diode  
● Open Emitter configuration  
● Temperature sensor  
Component features  
● High Blocking Voltage with low drain source on state resistance  
● High speed SiC-MOSFET technology  
● Resistant to Latch-up  
Housing features  
● Base isolation: Al2O3  
● Clip-in, reliable mechanical connection, qualified for wave  
soldering  
Schematic  
● Convex shaped substrate for superior thermal contact  
● Thermo-mechanical push-and-pull force relief  
● Press-fit pin  
● Reliable cold welding connection  
Target applications  
● Solar Inverters  
Types  
● 10-PZ12B2A075ME-P621L18Y  
Copyright Vincotech  
1
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Boost Switch  
VDSS  
Drain-source voltage  
1200  
20  
V
A
ID  
Drain current (DC current)  
Peak drain current  
Tj = Tjmax  
Ts = 80 °C  
Ts = 80 °C  
IDM  
tp limited by Tjmax  
Tj = Tjmax  
80  
A
Ptot  
Total power dissipation  
52  
W
-4 / 15  
-8 / 19  
175  
VGSS  
Gate-source voltage  
V
dynamic  
Tjmax  
Maximum Junction Temperature  
°C  
Boost Diode  
VRRM  
Peak repetitive reverse voltage  
1200  
19  
V
A
IF  
Forward current (DC current)  
Repetitive peak forward current  
Surge (non-repetitive) forward current  
Total power dissipation  
Tj = Tjmax  
Ts = 80 °C  
IFRM  
IFSM  
Ptot  
tp limited by Tjmax  
52  
A
Single Half Sine Wave,  
tp = 10 ms  
Tj = 25 °C  
Ts = 80 °C  
92  
A
Tj = Tjmax  
58  
W
°C  
Tjmax  
Maximum junction temperature  
175  
ByPass Diode  
VRRM  
Peak repetitive reverse voltage  
1600  
38  
V
A
IF  
Forward current (DC current)  
Surge (non-repetitive) forward current  
Surge current capability  
Tj = Tjmax  
Ts = 80 °C  
Tj = 150 °C  
Ts = 80 °C  
IFSM  
I2t  
270  
370  
47  
A
Single Half Sine Wave,  
tp = 10 ms  
A2s  
W
°C  
Ptot  
Total power dissipation  
Tj = Tjmax  
Tjmax  
Maximum junction temperature  
150  
Copyright Vincotech  
2
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Conditions  
Value  
Unit  
Module Properties  
Thermal Properties  
Tstg  
Tjop  
Storage temperature  
-40…+125  
°C  
°C  
Operation temperature under switching  
condition  
-40…+(Tjmax - 25)  
Isolation Properties  
Isolation voltage  
Isolation voltage  
Creepage distance  
Clearance  
Visol  
Visol  
DC Test Voltage*  
tp = 2 s  
6000  
2500  
V
AC Voltage  
tp = 1 min  
V
min 12,7  
9,15  
mm  
mm  
Comparative Tracking Index  
*100 % tested in production  
CTI  
≥ 200  
Copyright Vincotech  
3
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
Boost Switch  
Static  
25  
76,2  
105  
116  
90(1)  
rDS(on)  
Drain-source on-state resistance  
15  
20  
125  
150  
mΩ  
VGS(th)  
IGSS  
IDSS  
rg  
Gate-source threshold voltage  
Gate to Source Leakage Current  
Zero Gate Voltage Drain Current  
Internal gate resistance  
Gate charge  
0
0,005  
25  
25  
25  
1,7  
2,5  
10  
4
V
15  
0
0
250  
100  
nA  
µA  
1200  
1
10,5  
54  
Qg  
-4/15  
800  
20  
0
25  
25  
25  
nC  
Ciss  
Coss  
Crss  
VSD  
Short-circuit input capacitance  
Short-circuit output capacitance  
Reverse transfer capacitance  
Diode forward voltage  
1350  
58  
f = 1 Mhz  
0
0
1000  
pF  
V
3
10  
4,5  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,84  
K/W  
25  
14,4  
12,8  
td(on)  
Turn-on delay time  
Rise time  
125  
150  
25  
ns  
ns  
12,48  
9,28  
tr  
125  
150  
25  
9,28  
8,96  
Rgon = 8 Ω  
Rgoff = 8 Ω  
69,76  
78,4  
td(off)  
Turn-off delay time  
Fall time  
125  
150  
25  
ns  
80,96  
27,91  
30,9  
0/15  
700  
16  
tf  
125  
150  
25  
ns  
32,13  
0,235  
0,216  
0,212  
0,08  
QrFWD=0,119 µC  
QrFWD=0,113 µC  
QrFWD=0,111 µC  
Eon  
Turn-on energy (per pulse)  
Turn-off energy (per pulse)  
125  
150  
25  
mWs  
mWs  
Eoff  
125  
150  
0,087  
0,091  
Copyright Vincotech  
4
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VGE [V]  
VGS [V]  
Min  
Max  
VF [V]  
IF [A]  
Boost Diode  
Static  
25  
1,43  
1,73  
1,84  
1,8(1)  
300  
VF  
IR  
Forward voltage  
10  
125  
150  
V
Reverse leakage current  
Thermal  
Vr = 1200 V  
25  
40  
µA  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
Dynamic  
1,64  
K/W  
25  
7,75  
8,71  
IRRM  
Peak recovery current  
125  
150  
25  
A
8,88  
26,16  
24,28  
23,87  
0,119  
0,113  
0,111  
0,047  
0,044  
0,043  
733,99  
1159  
trr  
Reverse recovery time  
125  
150  
25  
ns  
di/dt=2071 A/µs  
di/dt=2263 A/µs  
di/dt=2290 A/µs  
Qr  
Recovered charge  
0/15  
700  
16  
125  
150  
25  
μC  
Erec  
Reverse recovered energy  
Peak rate of fall of recovery current  
125  
150  
25  
mWs  
A/µs  
(dirf/dt)max  
125  
150  
1267  
Copyright Vincotech  
5
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Characteristic Values  
Symbol  
Parameter  
Conditions  
Values  
Typ  
Unit  
VCE [V] IC [A]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
VGE [V]  
VGS [V]  
Min  
Max  
ByPass Diode  
Static  
25  
1,15  
1,1  
1,5(1)  
VF  
IR  
Forward voltage  
28  
V
125  
25  
100  
Reverse leakage current  
Vr = 1600 V  
µA  
150  
1000  
Thermal  
λpaste = 3,4 W/mK  
(PSX)  
(2)  
Rth(j-s)  
Thermal resistance junction to sink  
1,5  
K/W  
Thermistor  
Static  
R
ΔR/R  
P
Rated resistance  
Deviation of R100  
Power dissipation  
Power dissipation constant  
B-value  
25  
22  
kΩ  
%
R100 = 1484 Ω  
100  
25  
-5  
5
130  
1,5  
mW  
mW/K  
K
d
25  
B(25/50)  
Tol. ±1 %  
Tol. ±1 %  
3962  
4000  
B(25/100)  
B-value  
K
Vincotech Thermistor Reference  
I
(1)  
Value at chip level  
(2)  
Only valid with pre-applied Vincotech thermal interface material.  
Copyright Vincotech  
6
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Boost Switch Characteristics  
figure 1.  
MOSFET  
figure 2.  
MOSFET  
Typical output characteristics  
Typical output characteristics  
ID = f(VDS  
)
ID = f(VDS)  
80  
80  
VGS  
:
-4 V  
-2 V  
0 V  
60  
40  
2 V  
60  
40  
20  
0
4 V  
6 V  
8 V  
20  
10 V  
12 V  
14 V  
16 V  
18 V  
20 V  
0
-20  
-40  
-60  
-80  
0,0  
2,5  
5,0  
7,5  
10,0  
12,5  
-12,5 -10,0 -7,5 -5,0 -2,5 0,0  
2,5  
5,0  
7,5 10,0 12,5  
V
DS(V)  
VDS(V)  
tp  
=
=
tp  
=
250  
16  
μs  
V
250  
150  
μs  
°C  
25 °C  
VGS  
Tj =  
125 °C  
150 °C  
Tj:  
VGS from -4 V to 20 V in steps of 2 V  
figure 3.  
MOSFET  
figure 4.  
MOSFET  
Typical transfer characteristics  
Transient thermal impedance as a function of pulse width  
ID = f(VGS  
)
Zth(j-s) = f(tp)  
1
35  
10  
30  
25  
20  
15  
10  
5
0
10  
-1  
10  
0,5  
0,2  
-2  
10  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
10  
1
10  
2
10  
2
4
6
8
10  
10  
V
GS(V)  
tp(s)  
tp  
=
=
250  
10  
μs  
V
D =  
tp / T  
1,843  
25 °C  
VDS  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
MOSFET thermal model values  
R (K/W)  
τ (s)  
1,10E-01  
4,15E-01  
7,53E-01  
4,02E-01  
1,64E-01  
1,89E+00  
1,55E-01  
3,96E-02  
6,20E-03  
7,03E-04  
Copyright Vincotech  
7
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Boost Switch Characteristics  
figure 5.  
MOSFET  
Safe operating area  
ID = f(VDS  
)
100  
10  
1
0,1  
0,01  
1
10  
100  
1000  
10000  
V
DS(V)  
D =  
single pulse  
Ts =  
80  
16  
°C  
V
VGS  
=
Tj =  
Tjmax  
Copyright Vincotech  
8
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Boost Diode Characteristics  
figure 6.  
FWD  
figure 7.  
FWD  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
30  
25  
20  
15  
10  
5
10  
0
10  
-1  
10  
0,5  
0,2  
0,1  
-2  
10  
0,05  
0,02  
0,01  
0,005  
0
-3  
0
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0
1
2
3
4
5
10  
10  
10  
10  
tp(s)  
VF(V)  
tp  
=
250  
μs  
D =  
tp / T  
1,635  
25 °C  
125 °C  
150 °C  
Rth(j-s) =  
Tj:  
K/W  
FWD thermal model values  
R (K/W)  
τ (s)  
1,05E-01  
2,66E-01  
7,28E-01  
4,30E-01  
1,07E-01  
2,56E+00  
2,22E-01  
4,00E-02  
5,14E-03  
8,14E-04  
Copyright Vincotech  
9
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
ByPass Diode Characteristics  
figure 8.  
Rectifier  
figure 9.  
Rectifier  
Typical forward characteristics  
Transient thermal impedance as a function of pulse width  
IF = f(VF)  
Zth(j-s) = f(tp)  
1
80  
60  
40  
20  
0
10  
0
10  
-1  
10  
0,5  
0,2  
-2  
10  
0,1  
0,05  
0,02  
0,01  
0,005  
0
-3  
10  
-5  
-4  
10  
-3  
10  
-2  
10  
-1  
10  
0
1
2
0,00  
0,25  
0,50  
μs  
0,75  
1,00  
1,25  
1,50  
1,75  
2,00  
VF(V)  
10  
10  
10  
10  
tp(s)  
tp  
=
250  
D =  
tp / T  
1,5  
25 °C  
Tj:  
125 °C  
Rth(j-s) =  
K/W  
Rectifier thermal model values  
R (K/W)  
τ (s)  
9,44E-02  
3,47E-01  
7,44E-01  
2,04E-01  
1,11E-01  
2,48E+00  
3,51E-01  
7,63E-02  
1,21E-02  
1,25E-03  
Copyright Vincotech  
10  
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Thermistor Characteristics  
figure 10.  
Thermistor  
Typical NTC characteristic as function of temperature  
RT = f(T)  
25000  
20000  
15000  
10000  
5000  
0
20  
40  
60  
80  
100  
120  
140  
T(°C)  
Copyright Vincotech  
11  
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Boost Switching Characteristics  
figure 11.  
MOSFET  
figure 12.  
MOSFET  
Typical switching energy losses as a function of drain current  
Typical switching energy losses as a function of MOSFET turn on gate resistor  
E = f(ID)  
E = f(Rg)  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
0,5  
0,4  
0,3  
0,2  
0,1  
0,0  
Eon  
Eon  
Eon  
Eon  
Eon  
Eon  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
Eoff  
0
5
10  
15  
20  
25  
30  
35  
0
5
10  
15  
20  
25  
30  
35  
ID(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VDS  
VGS  
=
=
=
=
VDS  
VGS  
ID  
=
=
=
700  
0/15  
8
V
125 °C  
150 °C  
700  
0/15  
16  
V
125 °C  
150 °C  
Tj:  
Tj:  
V
V
A
Rgon  
Rgoff  
Ω
Ω
8
figure 13.  
FWD  
figure 14.  
FWD  
Typical reverse recovered energy loss as a function of drain current  
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor  
Erec = f(ID)  
Erec = f(Rg)  
0,06  
0,05  
0,04  
0,03  
0,02  
0,01  
0,00  
0,05  
0,04  
0,03  
0,02  
0,01  
0,00  
Erec  
Erec  
Erec  
Erec  
Erec  
Erec  
0
5
10  
15  
20  
25  
30  
35  
0
5
10  
15  
20  
25  
30  
35  
ID(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
25 °C  
25 °C  
VDS  
VGS  
=
=
=
VDS  
VGS  
ID  
=
=
=
700  
0/15  
8
V
V
125 °C  
150 °C  
700  
0/15  
16  
V
V
A
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Ω
Copyright Vincotech  
12  
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Boost Switching Characteristics  
figure 15.  
MOSFET  
figure 16.  
MOSFET  
Typical switching times as a function of drain current  
Typical switching times as a function of MOSFET turn on gate resistor  
t = f(ID)  
t = f(Rg)  
0
10  
0
10  
td(off)  
-1  
10  
-1  
10  
td(off)  
td(on)  
tr  
tf  
tf  
td(on)  
-2  
tr  
-2  
10  
10  
10  
10  
-3  
-3  
0
5
10  
15  
20  
25  
30  
35  
0
5
10  
15  
20  
25  
30  
35  
ID(A)  
Rg(Ω)  
With an inductive load at  
With an inductive load at  
Tj =  
Tj =  
150  
700  
0/15  
8
°C  
150  
700  
0/15  
16  
°C  
VDS  
=
=
=
=
VDS  
=
=
=
V
V
Ω
Ω
V
V
A
VGS  
Rgon  
Rgoff  
VGS  
ID  
8
figure 17.  
FWD  
figure 18.  
FWD  
Typical reverse recovery time as a function of drain current  
Typical reverse recovery time as a function of MOSFET turn on gate resistor  
trr = f(ID)  
trr = f(Rgon)  
0,035  
0,030  
0,025  
0,020  
0,015  
0,010  
0,005  
0,000  
0,07  
0,06  
0,05  
0,04  
0,03  
0,02  
0,01  
0,00  
trr  
trr  
trr  
trr  
trr  
trr  
0
5
10  
15  
20  
25  
30  
35  
0
5
10  
15  
20  
25  
30  
35  
ID(A)  
Rgon(Ω)  
VDS  
=
=
=
VDS  
VGS  
ID  
=
=
=
At  
700  
0/15  
8
V
V
Ω
At  
700  
0/15  
16  
V
V
A
25 °C  
25 °C  
VGS  
125 °C  
150 °C  
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Copyright Vincotech  
13  
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Boost Switching Characteristics  
figure 19.  
FWD  
figure 20.  
FWD  
Typical recovered charge as a function of drain current  
Typical recovered charge as a function of MOSFET turn on gate resistor  
Qr = f(ID)  
Qr = f(Rgon)  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
0,175  
0,150  
0,125  
0,100  
0,075  
0,050  
0,025  
0,000  
Qr  
Qr  
Qr  
Qr  
Qr  
Qr  
0
5
10  
15  
20  
25  
30  
35  
0
5
10  
15  
20  
25  
30  
35  
ID(A)  
Rgon(Ω)  
VDS  
=
=
=
VDS  
=
=
=
At  
700  
0/15  
8
V
V
Ω
At  
700  
0/15  
16  
V
V
A
25 °C  
25 °C  
VGS  
VGS  
ID  
125 °C  
150 °C  
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
figure 21.  
FWD  
figure 22.  
FWD  
Typical peak reverse recovery current as a function of drain current  
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor  
IRM = f(ID)  
IRM = f(Rgon)  
10  
17,5  
15,0  
12,5  
10,0  
7,5  
IRM  
IRM  
8
IRM  
6
4
IRM  
IRM  
IRM  
5,0  
2
2,5  
0
0,0  
0
5
10  
15  
20  
25  
30  
35  
0
5
10  
15  
20  
25  
30  
35  
ID(A)  
Rgon(Ω)  
VDS  
VGS  
=
=
=
VDS  
VGS  
ID  
=
=
=
At  
700  
0/15  
8
V
At  
700  
0/15  
16  
V
V
A
25 °C  
25 °C  
V
125 °C  
150 °C  
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
Ω
Copyright Vincotech  
14  
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Boost Switching Characteristics  
figure 23.  
FWD  
figure 24.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of drain current  
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor  
diF/dt, dirr/dt = f(ID)  
diF/dt, dirr/dt = f(Rgon)  
3500  
6000  
5000  
4000  
3000  
2000  
1000  
0
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
diF/dt ‒ ‒ ‒ ‒ ‒  
dirr/dt ──────  
3000  
2500  
2000  
1500  
1000  
500  
0
0
5
10  
15  
20  
25  
30  
35  
0
5
10  
15  
20  
25  
30  
35  
ID(A)  
Rgon(Ω)  
VDS  
=
=
=
VDS  
=
=
=
At  
700  
0/15  
8
V
V
Ω
At  
700  
0/15  
16  
V
V
A
25 °C  
25 °C  
VGS  
VGS  
ID  
125 °C  
150 °C  
125 °C  
150 °C  
Tj:  
Tj:  
Rgon  
figure 25.  
MOSFET  
Reverse bias safe operating area  
ID = f(VDS  
)
45  
ID MAX  
40  
35  
30  
25  
20  
15  
10  
5
0
0
250  
500  
750  
1000  
1250  
1500  
V
DS(V)  
Tj =  
At  
150  
°C  
Rgon  
Rgoff  
=
=
8
8
Ω
Ω
Copyright Vincotech  
15  
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Boost Switching Definitions  
figure 26.  
MOSFET  
figure 27.  
MOSFET  
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff  
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon  
)
tdoff  
IC  
IC  
VGE  
VGE  
VCE  
tEoff  
VCE  
tEon  
figure 28.  
MOSFET  
figure 29.  
MOSFET  
Turn-off Switching Waveforms & definition of tf  
Turn-on Switching Waveforms & definition of tr  
ID  
IC  
VCE  
tr  
VDS  
tf  
Copyright Vincotech  
16  
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Boost Switching Definitions  
figure 30.  
FWD  
figure 31.  
FWD  
Turn-off Switching Waveforms & definition of ttrr  
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)  
Qr  
IF  
IF  
fitted  
VF  
figure 32.  
FWD  
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec  
)
%
Erec  
tErec  
Prec  
3.01  
3.1  
3.19  
3.28  
3.37  
3.46  
t (µs)  
Copyright Vincotech  
17  
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Ordering Code  
Version  
Ordering Code  
Without thermal paste  
10-PZ12B2A075ME-P621L18Y  
10-PZ12B2A075ME-P621L18Y-/7/  
10-PZ12B2A075ME-P621L18Y-/3/  
With thermal paste (5,2 W/mK, PTM6000HV)  
With thermal paste (3,4 W/mK, PSX-P7)  
Marking  
Name  
Date code  
UL & VIN  
Lot  
Serial  
Text  
NN-NNNNNNNNNNNNNN-  
TTTTTTVV  
WWYY  
UL VIN  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
WWYY  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
G25  
0
22,5  
22,5  
22,5  
2
2,9  
8,3  
S25  
3
DC-  
Boost1  
DC-  
4
10,8  
22,5  
Boost1  
DC+Boost  
DC+Boost  
DC+In1  
DC+In1  
Boost1  
Boost1  
Boost2  
Boost2  
DC+In2  
DC+In2  
DC+Boost  
DC+Boost  
DC-  
5
19,6  
22,1  
29,1  
32  
22,5  
22,5  
22,5  
22,5  
17,8  
15,3  
7,2  
4,7  
0
6
7
8
9
33,5  
33,5  
33,5  
33,5  
32  
10  
11  
12  
13  
14  
15  
16  
17  
29,1  
22,1  
19,6  
10,8  
0
0
0
0
Boost2  
DC-  
18  
8,3  
0
Boost2  
S27  
19  
20  
21  
22  
2,9  
0
0
0
G27  
0
8
Therm1  
Therm2  
0
14,5  
Copyright Vincotech  
18  
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Pinout  
DC+Boost  
5,6,15,16  
DC+In1  
7,8  
DC+In2  
13,14  
D26  
D28  
D25  
D27  
Boost1  
9,10  
Boost2  
11,12  
T25  
T27  
G25  
1
G27  
20  
S25  
2
S27  
19  
Rt  
3,4  
DC-Boost1  
17,18  
DC-Boost2  
21  
Therm1  
22  
Therm2  
Identification  
Component  
Voltage  
Current  
Function  
Comment  
ID  
T25, T27  
D25, D27  
D26, D28  
Rt  
MOSFET  
FWD  
1200 V  
1200 V  
1600 V  
75 mΩ  
10 A  
Boost Switch  
Boost Diode  
ByPass Diode  
Thermistor  
Rectifier  
Thermistor  
28 A  
Copyright Vincotech  
19  
05 May. 2022 / Revision 2  
10-PZ12B2A075ME-P621L18Y  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 135  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 0 packages see vincotech.com website.  
Package data  
Package data for flow 0 packages see vincotech.com website.  
Vincotech thermistor reference  
See Vincotech thermistor reference table at vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
-/7/ ordering option added  
New Datasheet format, module is unchanged  
10-PZ12B2A075ME-P621L18Y-D2-14  
5 May. 2022  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
20  
05 May. 2022 / Revision 2  

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