10-PZ12NMA027ME-M340F63Y [VINCOTECH]
High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up;型号: | 10-PZ12NMA027ME-M340F63Y |
厂家: | VINCOTECH |
描述: | High Blocking Voltage with low drain source on state resistance;High speed SiC-MOSFET technology;Resistant to Latch-up |
文件: | 总30页 (文件大小:13328K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
10-PZ12NMA027ME-M340F63Y
datasheet
flowMNPC 0 SIC
1200 V / 27 mΩ
Topology features
flow 0 12 mm housing
● Common Emitter configuration
● Kelvin Emitter for improved switching performance
● Mixed Voltage Neutral Point Clamped Topology (T-Type)
● Temperature sensor
Component features
● High Blocking Voltage with low drain source on state resistance
● High speed SiC-MOSFET technology
● Resistant to Latch-up
Housing features
● Base isolation: Al2O3
● Clip-in, reliable mechanical connection, qualified for wave
soldering
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Extra features
● with SiC diode
Target applications
● Charging Stations
● Energy Storage Systems
● Solar Inverters
Types
● 10-PZ12NMA027ME-M340F63Y
Copyright Vincotech
1
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
MNPC BUCK Switch
VDSS
Drain-source voltage
1200
52
V
A
ID
Drain current (DC current)
Peak drain current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IDM
tp limited by Tjmax
Tj = Tjmax
240
A
Ptot
Total power dissipation
133
W
-5 / 20
-10 / 25
175
VGSS
Gate-source voltage
V
dynamic
Tjmax
Maximum Junction Temperature
°C
MNPC BUCK Diode
VRRM
Peak repetitive reverse voltage
650
28
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
I2t
tp limited by Tjmax
112,5
213
225
61
A
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
MNPC BOOST Switch
VCES
Collector-emitter voltage
650
57
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
240
94
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
MNPC BOOST Diode
VRRM
Peak repetitive reverse voltage
1200
15
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Surge (non-repetitive) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
IFRM
IFSM
Ptot
tp limited by Tjmax
47
A
Single Half Sine Wave,
tp = 10 ms
Tj = 25 °C
Ts = 80 °C
71
A
Tj = Tjmax
40
W
°C
Tjmax
Maximum junction temperature
175
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
650
15
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
12
A
Ptot
36
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Maximum DC voltage
500
V
Top
Operation Temperature
-55 ... 125
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
4000
2500
>12,7
9,17
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
MNPC BUCK Switch
Static
25
26,7
41,1
46,9
32,7(1)
rDS(on)
Drain-source on-state resistance
20
60
125
150
mΩ
VGS(th)
IGSS
IDSS
rg
Gate-source threshold voltage
Gate to Source Leakage Current
Zero Gate Voltage Drain Current
Internal gate resistance
Gate charge
VDS = VGS
0
0,015
25
25
25
2
2,6
4
V
20
0
0
750
300
nA
µA
Ω
1200
3
1,53
186
2850
240
22,8
3,3
Qg
-5/20
800
60
0
25
25
25
nC
Ciss
Coss
Crss
VSD
Short-circuit input capacitance
Short-circuit output capacitance
Reverse transfer capacitance
Diode forward voltage
f = 1 Mhz
0
0
1000
pF
V
30
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,71
K/W
Dynamic
25
18,57
17,59
17,03
7,58
td(on)
Turn-on delay time
125
150
25
ns
ns
tr
Rise time
125
150
25
6,48
6,49
Rgon = 4 Ω
Rgoff = 4 Ω
38,52
41,98
42,76
12,06
10,8
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
350
44
tf
125
150
25
ns
10,7
QrFWD=0,283 µC
QrFWD=0,297 µC
QrFWD=0,297 µC
0,163
0,143
0,141
0,07
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
0,076
0,079
Copyright Vincotech
4
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
MNPC BUCK Diode
Static
25
1,52
1,82
1,93
1,8(1)
153
VF
IR
Forward voltage
24
125
150
V
Reverse leakage current
Vr = 650 V
25
30
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,56
K/W
Dynamic
25
28,78
34,08
IRM
Peak recovery current
125
150
25
A
35,15
16,62
trr
Reverse recovery time
125
150
25
15,84
ns
15,75
0,283
di/dt=6668 A/µs
di/dt=6839 A/µs
di/dt=7834 A/µs
Qr
Recovered charge
-5/15
350
44
125
150
25
0,297
μC
0,297
0,065
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,073
mWs
A/µs
0,074
7672,79
9431,05
9470,57
(dirf/dt)max
125
150
Copyright Vincotech
5
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
MNPC BOOST Switch
Static
VGE(th)
VCEsat
ICES
IGES
rg
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
VCE = VGE
0,0008
80
25
3,3
4
4,7
V
25
1,67
1,8
2,22(1)
15
0
V
125
650
0
25
25
80
µA
nA
Ω
20
240
None
5000
18
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
20
0
190
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
1,01
K/W
Dynamic
25
19
td(on)
Turn-on delay time
125
150
25
19,38
19,25
4,58
ns
ns
tr
Rise time
125
150
25
5,52
5,9
Rgon = 2 Ω
Rgoff = 2 Ω
79,29
101,82
107,88
11,97
12,03
13,03
0,146
0,24
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
350
44
tf
125
150
25
ns
QrFWD=0,346 µC
QrFWD=0,621 µC
QrFWD=0,739 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
0,272
0,251
0,383
0,412
Eoff
125
150
Copyright Vincotech
6
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
MNPC BOOST Diode
Static
25
1,49
1,78
1,9
1,8(1)
250
VF
IR
Forward voltage
10
125
150
V
Reverse leakage current
Vr = 1200 V
25
30
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,39
K/W
Dynamic
25
43,15
53,77
54,13
15,6
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
21,8
ns
23,93
0,346
0,621
0,739
0,061
0,114
0,135
9526,24
2867,85
7503,89
di/dt=9346 A/µs
di/dt=7574 A/µs
di/dt=7571 A/µs
Qr
Recovered charge
-5/15
350
44
125
150
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
7
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
1,23
1,72
1,58
1,54
1,87(1)
VF
IR
Forward voltage
6
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
0,1
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,65
K/W
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
270
nF
%
Tolerance
-20
20
Thermistor
Static
R
Rated resistance
Deviation of R25
25
22
kΩ
%
R25 = 22 kΩ
25
-5
5
ΔR/R
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
100
-12
14
P
d
200
2
mW
mW/K
K
25
B(25/50)
Tol. ±3 %
Tol. ±3 %
3950
3998
B(25/100)
B-value
K
Vincotech Thermistor Reference
B
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BUCK Switch Characteristics
figure 1.
MOSFET
figure 2.
MOSFET
Typical output characteristics
Typical output characteristics
ID = f(VDS
)
ID = f(VDS)
200
200
VGS
:
-10 V
-8 V
-6 V
-4 V
-2 V
0 V
150
100
50
150
100
50
2 V
4 V
6 V
8 V
0
10 V
12 V
14 V
16 V
18 V
20 V
-50
-100
-150
-200
0
0,0
2,5
5,0
7,5
10,0
12,5
-10,0 -7,5
-5,0 -2,5
0,0
2,5
5,0
7,5
10,0 12,5
V
DS(V)
VDS(V)
tp
=
tp
=
250
20
μs
V
250
150
μs
°C
25 °C
VGS
=
Tj =
125 °C
150 °C
Tj:
VGS from -10 V to 20 V in steps of 2 V
figure 3.
MOSFET
figure 4.
MOSFET
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
ID = f(VGS
)
Zth(j-s) = f(tp)
0
100
10
80
60
40
20
0
-1
10
-2
10
0,5
0,2
0,1
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
0,0
2,5
5,0
7,5
10,0
12,5
10
V
GS(V)
tp(s)
tp
=
250
10
μs
V
D =
tp / T
0,714
25 °C
VDS
=
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
MOSFET thermal model values
R (K/W)
τ (s)
1,23E-01
3,61E-01
8,99E-02
6,32E-02
7,67E-02
9,22E-01
1,32E-01
4,36E-02
6,10E-03
7,13E-04
Copyright Vincotech
9
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BUCK Switch Characteristics
figure 5.
MOSFET
figure 6.
MOSFET
Safe operating area
Gate voltage vs gate charge
ID = f(VDS
)
VGS = f(Qg)
1000
25
20
15
10
5
100
10
1
0,1
0,01
0
-5
1
10
100
1000
10000
0
25
50
A
75
100
125
150
175
200
Qg(μC)
V
DS(V)
D =
ID
=
single pulse
20
25
Ts =
Tj =
80
20
°C
V
°C
VGS
=
Tj =
Tjmax
Copyright Vincotech
10
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BUCK Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
70
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,565
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,04E-01
2,58E-01
8,80E-01
2,30E-01
9,23E-02
1,96E+00
2,34E-01
5,94E-02
6,92E-03
1,26E-03
Copyright Vincotech
11
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BOOST Switch Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
200
200
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
150
100
50
150
100
50
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
250
125
μs
°C
25 °C
Tj:
VGE
=
Tj =
V
125 °C
VGE from 7 V to 17 V in steps of 1 V
figure 11.
IGBT
figure 12.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
80
10
0
60
40
20
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,014
25 °C
Tj:
125 °C
Rth(j-s) =
K/W
IGBT thermal model values
R (K/W)
τ (s)
9,43E-02
2,11E-01
5,17E-01
1,34E-01
5,81E-02
1,39E+00
2,21E-01
6,27E-02
7,49E-03
5,09E-04
Copyright Vincotech
12
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BOOST Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
30
25
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,392
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
7,48E-02
2,03E-01
1,24E+00
4,88E-01
3,16E-01
7,23E-02
2,91E+00
3,58E-01
6,46E-02
1,70E-02
3,69E-03
8,74E-04
Copyright Vincotech
13
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Boost Sw. Protection Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
17,5
15,0
12,5
10,0
7,5
10
0
10
-1
10
0,5
0,2
0,1
5,0
-2
10
0,05
0,02
0,01
0,005
0
2,5
-3
0,0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,646
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,02E-01
3,50E-01
9,53E-01
7,66E-01
4,76E-01
2,56E+00
1,72E-01
3,96E-02
5,83E-03
9,87E-04
Copyright Vincotech
14
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
15
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BUCK Switching Characteristics
figure 18.
MOSFET
figure 19.
MOSFET
Typical switching energy losses as a function of drain current
Typical switching energy losses as a function of MOSFET turn on gate resistor
E = f(ID)
E = f(Rg)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eon
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
0
10
20
30
40
50
60
70
80
90
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
=
VDS
VGS
ID
=
=
=
350
-5/15
4
V
V
Ω
Ω
125 °C
150 °C
350
-5/15
44
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of drain current
Typical reverse recovered energy loss as a function of MOSFET turn on gate resistor
Erec = f(ID)
Erec = f(Rg)
0,09
0,08
0,07
0,06
0,05
0,04
0,03
0,02
0,01
0,00
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
10
20
30
40
50
60
70
80
90
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
350
-5/15
4
V
V
Ω
125 °C
150 °C
350
-5/15
44
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
16
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BUCK Switching Characteristics
figure 22.
MOSFET
figure 23.
MOSFET
Typical switching times as a function of drain current
Typical switching times as a function of MOSFET turn on gate resistor
t = f(ID)
t = f(Rg)
-1
10
0
10
td(off)
td(off)
-1
10
td(on)
td(on)
-2
10
tr
tf
tf
tr
-2
10
-3
10
-3
10
0
10
20
30
40
50
60
70
80
90
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
-5/15
4
°C
V
150
350
-5/15
44
°C
VDS
=
=
=
=
VDS
=
=
=
V
V
A
VGS
Rgon
Rgoff
VGS
ID
V
Ω
Ω
4
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of drain current
Typical reverse recovery time as a function of MOSFET turn on gate resistor
trr = f(ID)
trr = f(Rgon)
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
0,0225
0,0200
0,0175
0,0150
0,0125
0,0100
0,0075
0,0050
0,0025
0,0000
trr
trr
trr
trr
trr
trr
0
10
20
30
40
50
60
70
80
90
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
-5/15
4
V
V
Ω
At
350
V
V
A
25 °C
25 °C
125 °C
150 °C
-5/15
44
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
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09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BUCK Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of drain current
Typical recovered charge as a function of MOSFET turn on gate resistor
Qr = f(ID)
Qr = f(Rgon)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
10
20
30
40
50
60
70
80
90
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
ID(A)
Rgon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
V
At
350
-5/15
44
V
25 °C
25 °C
-5/15
4
V
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Ω
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of drain current
Typical peak reverse recovery current as a function of MOSFET turn on gate resistor
IRM = f(ID)
IRM = f(Rgon)
45
40
35
30
25
20
15
10
5
80
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
0
10
20
30
40
50
60
70
80
90
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
V
V
Ω
At
350
-5/15
44
V
25 °C
25 °C
-5/15
4
125 °C
150 °C
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Copyright Vincotech
18
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BUCK Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of drain current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(ID)
diF/dt, dirr/dt = f(Rgon)
17500
30000
25000
20000
15000
10000
5000
0
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
15000
12500
10000
7500
5000
2500
0
0
10
20
30
40
50
60
70
80
90
ID(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
VDS
VGS
=
=
=
VDS
VGS
ID
=
=
=
At
350
-5/15
4
V
V
Ω
At
350
V
V
A
25 °C
25 °C
125 °C
150 °C
-5/15
44
125 °C
150 °C
Tj:
Tj:
Rgon
figure 32.
MOSFET
Reverse bias safe operating area
ID = f(VDS
)
150
ID MAX
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
DS(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
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09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BOOST Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eoff
Eoff
Eoff
Eoff
Eon
Eon
Eon
Eoff
Eon
Eoff
0
10
20
30
40
50
60
70
80
90
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
Ω
125 °C
150 °C
350
-5/15
44
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,25
0,20
0,15
0,10
0,05
0,00
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
44
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
20
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BOOST Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
-1
10
-1
10
td(off)
td(on)
td(on)
tf
tr
tf
-2
10
-2
10
tr
-3
10
-3
10
0
20
40
60
80
100
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
-5/15
2
°C
V
150
350
-5/15
44
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,040
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
0,035
0,030
0,025
0,020
0,015
0,010
0,005
0,000
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
44
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
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09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BOOST Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
1,50
1,25
1,00
0,75
0,50
0,25
0,00
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
44
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
70
60
50
40
30
20
10
0
70
60
50
40
30
20
10
0
IRM
IRM
IRM
IRM
IRM
IRM
0
20
40
60
80
100
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
44
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BOOST Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
20000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
17500
15000
12500
10000
7500
5000
2500
0
dirr/dt ──────
0
20
40
60
80
100
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
44
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
Copyright Vincotech
23
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BOOST Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
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09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BOOST Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
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09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BUCK Switching Definitions
figure 48.
MOSFET
figure 49.
MOSFET
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon
)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
MOSFET
figure 51.
MOSFET
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
ID
IC
VCE
tr
VDS
tf
Copyright Vincotech
26
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
MNPC BUCK Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of ttrr
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr)
Qr
IF
IF
fitted
VF
figure 54.
FWD
Turn-on Switching Waveforms & definition of tErec (tErec = integrating time for Erec
)
%
E
rec
tErec
P
rec
t (µs)
Copyright Vincotech
27
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PZ12NMA027ME-M340F63Y
10-PZ12NMA027ME-M340F63Y-/7/
10-PZ12NMA027ME-M340F63Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
22,2
22,2
22,2
22,2
22,2
22,2
22,2
16,4
13,9
8,3
5,8
0
Function
E1
0
2
3,1
G1
3
12,8
15,3
22,7
30,1
33,2
33,2
33,2
33,2
33,2
33,2
30,1
22,7
15,3
12,8
3,1
DC+
DC+
GND
E2
4
5
6
7
G2
8
OUT1
OUT1
OUT2
OUT2
G3
9
10
11
12
13
14
15
16
17
18
19
20
0
E3
0
GND
DC-
0
0
DC-
0
G4
0
0
E4
0
9,55
12,65
NTC1
NTC2
0
Copyright Vincotech
28
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Pinout
DC+
3,4
T1
G1
C1
D5
2
E1
D2
1
D7
GND
5
OUT1
8,9
T2
E3
13
G3
12
G2
E2
6
T3
7
GND
14
OUT2
10,11
D8
D3
T4
D6
C2
G4
NTC
17
E4
18
DC-
NTC1
19
NTC2
20
15,16
Identification
Component
Voltage
Current
Function
Comment
ID
T1, T4
D7, D8
T3, T2
D5, D6
D3, D2
C2, C1
NTC
MOSFET
FWD
1200 V
650 V
650 V
1200 V
650 V
500 V
26,67 mΩ
24 A
MNPC BUCK Switch
MNPC BUCK Diode
MNPC BOOST Switch
MNPC BOOST Diode
Boost Sw. Protection Diode
Capacitor (DC)
IGBT
80 A
FWD
10 A
FWD
6 A
Capacitor
Thermistor
Thermistor
Copyright Vincotech
29
09 Sep. 2022 / Revision 4
10-PZ12NMA027ME-M340F63Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
Correct Buck Diode Maximum Ratings according to PCN-31-
2022
10-PZ12NMA027ME-M340F63Y-D4-14
9 Sep. 2022
Characteristic values updated with new measurements
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
30
09 Sep. 2022 / Revision 4
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