10-PZ12NMA080F205-M260F53Y [VINCOTECH]
5us short circuit withstand time;High speed switching;Minimized tail current;
| 型号： | 10-PZ12NMA080F205-M260F53Y |
| 厂家： | 
VINCOTECH |
| 描述： | 5us short circuit withstand time;High speed switching;Minimized tail current |
| 文件： | 总28页 (文件大小：8781K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
10-PZ12NMA080F205-M260F53Y
datasheet
flowMNPC 0
1200 V / 80 A
Topology features
flow 0 12 mm housing
● Kelvin Emitter for improved switching performance
● Temperature sensor
● Mixed Voltage Neutral Point Clamped Topology (T-Type)
Component features
● 5us short circuit withstand time
● High speed switching
● Minimized tail current
Housing features
● Base isolation: Al2O3
● Clip-in, reliable mechanical connection, qualified for wave
soldering
● Convex shaped substrate for superior thermal contact
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● Energy Storage Systems
● Industrial Drives
● Solar Inverters
● UPS
Types
● 10-PZ12NMA080F205-M260F53Y
Copyright Vincotech
1
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
1200
76
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
240
186
±20
5
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 600 V
µs
°C
Tjmax
Maximum junction temperature
175
Buck Diode
VRRM
Peak repetitive reverse voltage
600
51
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
69
W
°C
Tjmax
Maximum junction temperature
175
Boost Switch
VCES
Collector-emitter voltage
650
59
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
225
86
A
Ptot
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
1200
44
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
365
94
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
9
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
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12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,004
80
25
5
6
7
V
V
25
2,18
2,39
2,44
2,6(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
20
20
0
25
25
50
µA
nA
Ω
0
500
None
6400
440
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
160
VCC = 960 V
0/15
80
316
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,51
K/W
25
51,72
51,69
51,75
10,05
10,67
10,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 4 Ω
Rgoff = 4 Ω
59,79
73,88
78,32
37,81
57,28
63,12
0,574
1,05
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
55
tf
125
150
25
ns
QrFWD=1,01 µC
QrFWD=2,54 µC
QrFWD=3,25 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
1,21
1,01
Eoff
125
150
1,76
2,06
Copyright Vincotech
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12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
2,27
1,68
1,58
2,8(1)
VF
IR
Forward voltage
60
125
150
V
Reverse leakage current
Thermal
Vr = 600 V
25
10
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,38
K/W
25
78,93
98,7
IRM
Peak recovery current
125
150
25
A
107,7
23,12
51,55
68,95
1,01
trr
Reverse recovery time
125
150
25
ns
di/dt=6620 A/µs
di/dt=5238 A/µs
di/dt=5071 A/µs
Qr
Recovered charge
±15
350
55
125
150
25
2,54
μC
3,25
0,141
0,403
0,536
11555,08
6307,82
5897,32
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
(dirf/dt)max
125
150
Copyright Vincotech
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12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,00075 25
25
3,2
4
4,8
V
V
1,56
1,56
1,59
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
75
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
50
µA
nA
Ω
20
25
100
None
4500
130
17
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
VCC = 520 V
15
75
164
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,1
K/W
25
147,86
148,56
148,32
14,94
17,75
18,76
131,26
148,34
153,5
16,43
40,62
44,67
1,24
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 16 Ω
Rgoff = 16 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
70
tf
125
150
25
ns
QrFWD=1,77 µC
QrFWD=3,8 µC
QrFWD=4,55 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,47
mWs
mWs
1,55
0,783
1,2
Eoff
125
150
1,33
Copyright Vincotech
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12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
2,22
2,31
2,21
2,54(1)
VF
IR
Forward voltage
50
125
150
25
V
2,5(1)
60
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
4400
8800
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
1,02
K/W
25
82,66
100,13
108,75
37,78
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
123,66
130,08
1,77
ns
di/dt=4895 A/µs
di/dt=4510 A/µs
di/dt=4310 A/µs
Qr
Recovered charge
±15
350
70
125
150
25
3,8
μC
4,55
0,228
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
0,708
mWs
A/µs
0,878
6587,02
5434,74
5156,51
(dirf/dt)max
125
150
Copyright Vincotech
7
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
200
200
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
150
100
50
150
100
50
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
80
10
-1
60
40
20
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
59
μs
V
D =
tp / T
0,51
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,69E-02
9,41E-02
2,77E-01
6,79E-02
2,44E-02
3,44E+00
5,98E-01
1,08E-01
1,98E-02
1,61E-03
Copyright Vincotech
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12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
100µs
1ms
10ms
1
100ms
DC
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
50
100
150
200
250
300
350
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
40
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Buck Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
-2
10
50
0,5
0,2
0,1
-3
0,05
0,02
0,01
0,005
0
10
25
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,379
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,16E-02
2,02E-01
7,09E-01
2,16E-01
9,74E-02
7,28E-02
3,99E+00
6,32E-01
1,11E-01
3,68E-02
5,31E-03
1,31E-03
Copyright Vincotech
11
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Boost Switch Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
200
200
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
150
100
50
150
100
50
0
0,0
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 11.
IGBT
figure 12.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
1
70
10
60
50
40
30
20
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
VCE
=
=
250
10
μs
V
D =
tp / T
1,104
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,16E-01
6,30E-01
1,62E-01
3,68E-02
6,02E-02
4,05E-01
6,87E-02
1,13E-02
2,51E-03
3,09E-04
Copyright Vincotech
12
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Boost Switch Characteristics
figure 13.
IGBT
figure 14.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
25
50
75
100
125
150
175
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
75
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
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12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Boost Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
150
125
100
75
10
0
10
-1
10
50
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
25
-3
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
1,016
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,56E-02
1,14E-01
4,09E-01
2,64E-01
9,94E-02
7,49E-02
3,42E+00
5,52E-01
9,78E-02
3,21E-02
6,42E-03
9,84E-04
Copyright Vincotech
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12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Thermistor Characteristics
figure 17.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Buck Switching Characteristics
figure 18.
IGBT
figure 19.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Eoff
Eoff
Eon
Eoff
Eon
Eoff
Eon
Eon
Eoff
Eon
Eoff
Eon
0
20
40
60
80
100
120
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
Ω
125 °C
150 °C
350
±15
55
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
4
figure 20.
FWD
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
120
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
55
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
16
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Buck Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
-1
10
-1
10
tf
td(off)
td(on)
tf
tr
tr
-2
10
-2
10
-3
10
-3
10
0
20
40
60
80
100
120
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
4
°C
V
150
350
±15
55
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
4
figure 24.
FWD
figure 25.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
120
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
55
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
17
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Buck Switching Characteristics
figure 26.
FWD
figure 27.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
6
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
120
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
55
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 28.
FWD
figure 29.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
175
150
125
100
75
IRM
IRM
IRM
IRM
IRM
50
IRM
50
25
25
0
0
0,0
0
20
40
60
80
100
120
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
55
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
18
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Buck Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
15000
20000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
20
40
60
80
100
120
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
4
V
V
Ω
125 °C
150 °C
350
±15
55
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 32.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
4
4
Ω
Copyright Vincotech
19
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Boost Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
2,5
2,0
1,5
1,0
0,5
0,0
5
4
3
2
1
0
Eon
Eon
Eon
Eoff
Eon
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0
25
50
75
100
125
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
Ω
125 °C
150 °C
350
±15
70
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 35.
FWD
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,25
1,00
0,75
0,50
0,25
0,00
1,0
0,8
0,6
0,4
0,2
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
25
50
75
100
125
0
10
20
30
40
50
60
70
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
70
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
20
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Boost Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
td(off)
-1
10
-1
10
tr
tf
tf
tr
-2
10
-2
10
-3
10
-3
10
0
25
50
75
100
125
0
10
20
30
40
50
60
70
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
16
°C
V
150
350
±15
70
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
16
figure 39.
FWD
figure 40.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,45
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
25
50
75
100
125
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Boost Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Qr
Qr
Qr
Qr
Qr
Qr
0
25
50
75
100
125
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
70
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 43.
FWD
figure 44.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
200
175
150
125
100
75
IRM
IRM
IRM
50
IRM
IRM
IRM
50
25
25
0
0
0
25
50
75
100
125
0
10
20
30
40
50
60
70
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Boost Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
9000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
8000
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
25
50
75
100
125
IC(A)
0
10
20
30
40
50
60
70
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
16
V
V
Ω
125 °C
150 °C
350
±15
70
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 47.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
175
IC MAX
150
125
100
75
50
25
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
16
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
23
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Switching Definitions
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 50.
IGBT
figure 51.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
24
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Switching Definitions
figure 52.
FWD
figure 53.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
25
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Ordering Code
Version
Ordering Code
Without thermal paste
10-PZ12NMA080F205-M260F53Y
10-PZ12NMA080F205-M260F53Y-/7/
10-PZ12NMA080F205-M260F53Y-/3/
With thermal paste (5,2 W/mK, PTM6000HV)
With thermal paste (3,4 W/mK, PSX-P7)
Marking
Name
Date code
UL & VIN
Lot
Serial
SSSS
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
Function
S2
33,6
30,8
22
0
2
0
G2
3
0
-DC
-DC
GND
S4
4
19,2
10,1
2,8
0
0
5
0
6
0
7
0
G4
8
0
7,1
9,9
12,7
15,5
22,6
22,6
22,6
22,6
22,6
22,6
22,6
14,8
8,2
Line
Line
Line
Line
G3
9
0
10
11
12
13
14
15
16
17
18
19
20
21
22
0
0
0
2,8
10,1
19,2
22
S3
GND
+DC
+DC
G1
30,8
33,6
33,6
33,6
S1
NTC1
NTC2
not assembled
not assembled
Copyright Vincotech
26
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Pinout
+DC
15,16
T1
D1
17
18
G1
S1
12
G3
S3
T3
D4
T4
13
Line
08,09,10,11
GND
05,14
D3
07
G4
S4
T2
02
D2
06
G2
S2
NTC
01
-DC
03,04
NTC2
20
NTC1
19
Identification
Component
Voltage
Current
Function
Comment
ID
T1_1,_2, T2_1,_2
D3, D4
IGBT
FWD
1200 V
600 V
80 A
60 A
75 A
50 A
Buck Switch
Buck Diode
Boost Switch
Boost Diode
Thermistor
T3, T4
IGBT
650 V
D1, D2
FWD
1200 V
NTC
Thermistor
Copyright Vincotech
27
12 Jul. 2022 / Revision 1
10-PZ12NMA080F205-M260F53Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 135
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 0 packages see vincotech.com website.
Package data
Package data for flow 0 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
10-PZ12NMA080F205-M260F53Y-D1-14
12 Jul. 2022
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
12 Jul. 2022 / Revision 1
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