20-1B06IPB010RC01-P955A45 [VINCOTECH]
Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels;
| 型号： | 20-1B06IPB010RC01-P955A45 |
| 厂家： | 
VINCOTECH |
| 描述： | Optimised collector emitter saturation voltage and forward voltage for low conduction losses;Reverse conductive IGBT technology;Smooth switching performance leading to low EMI levels 双极性晶体管 |
| 文件： | 总30页 (文件大小：1001K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
20-PB06IPB010RC01-P955A45Y
20-1B06IPB010RC01-P955A45
datasheet
flow IPM 1B
600 V / 10 A
Features
flow IPM 1B
● CIPꢀtopology (converter + inverter + PFC)
● Optimized for PFC frequencies of 20kHz..100kHz
and inverter frequencies of 4kHz..20kHz
● Integrated PFC gate drive
● PFC shunt
● Inverter gate drive inclusive bootstrap for
high side power supply
Solder pins
● Over current and short circuit protection
● Integrated DCꢀcapacitor
● Sense output of DCꢀcurrent
● Temperature sensor
● Conclusive power flow, all power connections
on one side, no input output Xꢀing
● Optional preꢀapplied thermal interface material
Pressꢀfit
Schematic
Target Applications
● Low Power Industrial Drives
● Motor Integrated Fans and Pumps
● AirCon
● Electrical Tools
Types
● 20ꢀ1B06IPB010RC01ꢀP955A45
● 20ꢀPB06IPB010RC01ꢀP955A45Y
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Input Rectifier Diode
Repetitive peak reverse voltage
DC forward current
V RRM
I FAV
1600
V
A
A
T s = 80 °C
T c = 80 °C
13
14
T j = T jmax
t p = 10 ms
T j = T jmax
I FSM
Surge (nonꢀrepetitive) forward current
130
80
I 2
t
I2tꢀvalue
A2s
W
T s = 80 °C
T c = 80 °C
15
23
P tot
Power dissipation
T jmax
Maximum Junction Temperature
150
°C
PFC IGBT
V CE
I C
Collectorꢀemitter breakdown voltage
DC collector current
650
V
A
T s = 80 °C
T c = 80 °C
12
14
T j = T jmax
I CRM
t p limited by T jmax
V CE ≤ 650V, T j ≤ T op max
T j = T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
90
90
A
A
T s = 80 °C
T c = 80 °C
19
29
P tot
V GE
W
V
Gateꢀemitter peak voltage
Maximum Junction Temperature
±20
175
T jmax
°C
copyright Vincotech
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31 Jan. 2017 / Revision 6
20-PB06IPB010RC01-P955A45Y
20-1B06IPB010RC01-P955A45
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC Inverse Diode
Peak Repetitive Reverse Voltage
DC forward current
V RRM
I F
I FRM
P tot
650
V
A
T s = 80 °C
T c = 80 °C
5
7
T j = T jmax
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
12
A
T s = 80 °C
T c = 80 °C
10
15
W
°C
T jmax
Maximum Junction Temperature
175
PFC Diode
V RRM
I F
Peak Repetitive Reverse Voltage
DC forward current
650
V
A
A
T s = 80 °C
T c = 80 °C
10
14
T j = T jmax
I FSM
Surge (nonꢀrepetitive) forward current
180
130
60
t p = 8,3 ms
60 Hz half sine wave
2t
I FRM
P tot
I2tꢀvalue
A2s
A
I
t p limited by T jmax
T j = T jmax
Repetitive peak forward current
Power dissipation
T s = 80 °C
T c = 80 °C
17
26
W
T jmax
Maximum Junction Temperature
175
°C
Inverter Transistor
Collectorꢀemitter breakdown voltage
DC collector current
V CE
I C
600
V
A
T s = 80 °C
T c = 80 °C
8
T j = T jmax
10
I CRM
t p limited by T jmax
V CE ≤ 600 V, T j ≤ 150 °C
T j = T jmax
Repetitive peak collector current
Turn off safe operating area
Power dissipation
30
20
A
A
T s = 80 °C
T c = 80 °C
16
25
P tot
V GE
W
V
Gateꢀemitter peak voltage
Short circuit ratings
±20
t SC
T j ≤ 150 °C
V GE = 15 V
5
µs
V
V CC
400
T jmax
Maximum Junction Temperature
175
°C
Inverter Diode
V RRM
I F
P tot
T jmax
Peak Repetitive Reverse Voltage
DC forward current
600
V
A
T s = 80 °C
T c = 80 °C
T s = 80 °C
T c = 80 °C
8
T j = T jmax
T j = T jmax
10
14
22
Power dissipation
W
°C
Maximum Junction Temperature
175
copyright Vincotech
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20-1B06IPB010RC01-P955A45
datasheet
Maximum Ratings
T j=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
PFC Shunt
I F
DC forward current
Power dissipation
10
10
A
P tot
W
PFC Driver*
V CEO
I C
Collectorꢀemitter voltage
Collector current
45
500
1000
100
200
150
V
I CM
t P ≤ 10 ms
Peak collector current
Base current
mA
I B
I BM
Peak base current
mA
°C
Maximum Junction Temperature
T jmax
* for more information see infineon's datasheet BC817
DC - Shunt
I F
DC forward current
Power dissipation
8
5
A
P tot
W
DC link Capacitor
U MAX
Maximum DC voltage
500
V
Gate Driver
U CC
U IN
Supply voltage
20
10
V
V
V
Input voltage (LIN, HIN, EN)
Output voltage (FAULT)
U OUT
V CC+0,5
Thermal Properties
T stg
T op
Storage temperature
ꢀ40…+125
°C
°C
Operation temperature under switching condition
ꢀ40…+(Tjmax ꢀ 25)
Isolation Properties
Isolation voltage
V is
t = 2 s
DC voltage
4000
min 12,7
min 12,7
>200
V
Creepage distance
Clearance
mm
mm
Comparative tracking index
CTI
copyright Vincotech
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datasheet
Characteristic Values
Conditions
V r [V]
Value
Typ
Parameter
Symbol
Unit
I C [A]
I F [A] T j [°C]
I D [A]
V GE [V]
V CE
[V]
V DS
Min
Max
V GS [V]
Input Rectifier Diode
Forward voltage
25
125
25
125
25
125
25
125
1,04
0,97
0,87
0,74
25
V F
V to
r t
7
V
V
Threshold voltage (for power loss calc. only)
Slope resistance (for power loss calc. only)
Reverse current
7
7
mꢁ
mA
33
0,01
I r
1600
phaseꢀchange
material
R th(j-s)
K/W
Thermal resistance junction to sink
4,56
λ = 3,4W/mK
PFC IGBT
25
0,0003
125
3,3
4
4,7
1,9
V GE(th)
V CEsat
I CES
I GES
R gint
t d(on)
t r
V CE = V GE
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff
Gateꢀemitter leakage current
Integrated Gate resistor
Turnꢀon delay time
Rise time
V
V
25
125
1,28
1,28
15
0
10
25
125
25
0,04
120
650
0
mA
nA
ꢁ
20
125
none
25
125
25
125
25
27
28
5
7
ns
122
154
2
t d(off)
t f
Turnꢀoff delay time
Fall time
125
U CC = 15 V
400
10
25
125
25
125
25
2
0,1516
0,2417
0,0317
0,0583
E on
Turnꢀon energy loss
Turnꢀoff energy loss
Input capacitance
mWs
pF
E off
125
C ies
C oss
C rss
Q G
2100
45
Output capacitance
Reverse transfer capacitance
Gate charge
f = 1 MHz
0
25
25
7,7
65
15
520
30
10
25
nC
phaseꢀchange
material
λ = 3,4W/mK
R th(j-s)
Thermal resistance junction to sink
4,96
K/W
PFC Inverse Diode
25
125
1,23
1,73
1,59
2,15
V F
Diode forward voltage
V
phaseꢀchange
material
R th(j-s)
Thermal resistance junction to sink
9,56
K/W
λ = 3,4W/mK
copyright Vincotech
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20-1B06IPB010RC01-P955A45
datasheet
Characteristic Values
Conditions
V r [V]
Value
Typ
Parameter
Symbol
Unit
I C [A]
I F [A] T j [°C]
I D [A]
V GE [V]
V CE
[V]
V DS
Min
Max
V GS [V]
PFC Diode
25
125
1,64
1,63
2,26
5
V F
I rm
Forward voltage
10
V
µA
Reverse leakage current
Peak recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovered energy
Peak rate of fall of recovery current
650
400
25
25
125
25
125
25
125
25
125
25
125
15
19
22
I RRM
A
t rr
ns
36
0,2008
0,4358
0,0150
0,0504
2033
891
Q rr
U CC = 15 V
10
µC
E rec
mWs
A/µs
( di rf/dt )max
phaseꢀchange
material
R th(j-s)
Thermal resistance junction to sink
5,48
K/W
λ = 3,4W/mK
PFC Shunt
R1 value
R
50
5
mꢁ
Inverter Transistor
Gate emitter threshold voltage
Collectorꢀemitter saturation voltage *
Collectorꢀemitter cutꢀoff current incl. Diode
Turnꢀon delay time **
Rise time
25
0,0002
125
4,4
1,7
5,6
2,95
0,1
V GE(th)
V CEsat
I CES
t d(on)
t r
VCE=VGE
V
V
25
125
2,20
2,32
15
0
10
25
125
25
125
25
125
25
600
400
mA
582
631
20
25
837
950
16
22
0,1950
0,3241
0,1611
0,2042
ns
t d(off)
t f
Turnꢀoff delay time **
Fall time
U CC = 15 V
U IN = 5 V
125
25
6
125
25
125
25
E on
Turnꢀon energy loss
mWs
E off
Turnꢀoff energy loss
125
C ies
Input capacitance
655
37
C oss
C rss
Output capacitance
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
22
phaseꢀchange
material
R th(j-s)
Thermal resistance junction to sink
5,79
K/W
λ = 3,4W/mK
* chip data
** including gate driver
copyright Vincotech
5
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20-1B06IPB010RC01-P955A45
datasheet
Characteristic Values
Conditions
V r [V]
Value
Typ
Parameter
Symbol
Unit
I C [A]
I F [A] T j [°C]
I D [A]
V GE [V]
V CE
[V]
V DS
Min
Max
V GS [V]
Inverter Diode
25
125
25
125
25
1,5
2,23
2,18
6
6
179
2,85
V F
I RRM
Diode forward voltage
10
V
A
Peak reverse recovery current
Reverse recovery time
t rr
ns
125
276
U CC=15V
U IN=5V
25
125
25
125
25
0,3566
0,6738
181
46
0,0867
0,1610
Q rr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
400
6
µC
( di rf/dt )max
E rec
A/µs
mWs
125
phaseꢀchange
material
R th(j-s)
Thermal resistance junction to sink
6,66
K/W
λ = 3,4W/mK
DC - Shunt
R2 value
R
C
25
25
mꢁ
nF
DC link Capacitor
C value
100
Gate Driver
V CC
IQCC
Supply voltage
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
25
13
15
17,5
2
V
U LIN = 0 V; U HIN=3,3 V
Quiescent Vcc supply current
Input voltage (LIN, HIN, EN)
Input voltage (GATE)
1,3
mA
VIN
0
0
5
15
VGATE
VIH
Logic "0" input voltage (LIN, HIN)
Logic "1" input voltage (LIN, HIN)
Positive going threshold voltage (EN)
Negative going threshold voltage (EN)
Input clamp voltage (LIN, HIN, EN)
ITRIP positive going threshold
Input bias current LIN high
Input bias current LIN low
1,7
0,7
1,9
1,1
9
2,1
0,9
2,1
1,3
10,3
445
70
2,4
1,1
2,3
1,5
12
U CC = 15 V
VIL
V
VEN, TH+
VEN, THꢀ
VIN, CLAMP I IN = 4 mA
VIT, TH+
380
510
100
200
100
120
120
U CC
mV
ꢂA
I LIN+
I LINꢀ
I HIN+
I HINꢀ
IEN+
V FLT
U LIN = 3,3 V
U LIN = 0 V
110
70
U HIN = 3,3 V
U HIN = 0 V
U HIN = 3,3 V
Input bias current HIN high
Input bias current HIN low
110
45
Input bias current EN high
Output voltage (FAULT)
0
V
ꢁ
RON, FLT U FAULT = 0,5 V
Low on resistor of pull down trans. (FAULT)
Pulse width for ON or OFF
45
100
tIN
1
ꢂs
tON
Turnꢀon propagation delay (LIN, HIN)
Turnꢀoff propagation delay (LIN, HIN)
FAULT reset time
400
360
530
490
4
800
760
U LIN/HIN = 0 V or 3,3 V
ns
tOFF
tRST
tDT
ms
ns
U LIN/HIN = 0 V & 3,3 V
Fixed deadtime between high and low side
150
310
copyright Vincotech
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31 Jan. 2017 / Revision 6
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20-1B06IPB010RC01-P955A45
datasheet
Characteristic Values
Conditions
V r [V]
Value
Typ
Parameter
Symbol
Unit
I C [A]
I F [A] T j [°C]
I D [A]
V GE [V]
V GS [V]
V CE
[V]
V DS
Min
Max
Thermistor
Rated resistance
Deviation of R 100
R
ΔR/R
P
25
100
25
25
25
25
22000
ꢁ
%
R 100 = 1486 ꢁ
ꢀ12
12
Power dissipation
Power dissipation constant
Bꢀvalue
200
2
mW
mW/K
K
B (25/50)
Tol. ±3%
Tol. ±3%
3950
3998
B (25/100)
Bꢀvalue
K
Vincotech NTC Reference
B
copyright Vincotech
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20-1B06IPB010RC01-P955A45
datasheet
Output Inverter
Figure 1
Typical output characteristics
Output inverter IGBT
Figure 2
Typical output characteristics
Output inverter IGBT
I C = f(V CE
)
I C = f(V CE)
35
35
30
25
20
15
10
5
30
25
20
15
10
5
0
0
0
0
1
2
3
4
5
V
CE (V)
1
2
3
4
V
CE (V)
5
At
At
t p
=
t p =
250
25
ꢂs
°C
250
125
ꢂs
°C
T j =
T j =
U CC from
U CC from
10 V to 17 V in steps of 1 V
10 V to 17 V in steps of 1 V
Figure 3
Output inverter FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
40
35
30
25
20
15
10
Tj = Tjmax-25°C
5
Tj = 25°C
0
0
1
2
3
4
5
VF (V)
At
t p
=
250
ꢂs
copyright Vincotech
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20-1B06IPB010RC01-P955A45
datasheet
Output Inverter
Figure 4
Output inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
0,6
0,5
0,4
0,3
0,2
0,1
0,0
Eon High T
Eon Low T
Eoff High T
Eoff Low T
0
2
4
6
8
10
12
I C (A)
With an inductive load at
T j =
°C
V
25/125
400
V CE
U CC
=
15
V
Figure 5
Output inverter FWD
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I C)
0,20
Erec
Tj = Tjmax -25°C
0,15
0,10
0,05
0,00
Tj = 25°C
Erec
0
2
4
6
8
10
12
I C (A)
With an inductive load at
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
copyright Vincotech
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20-1B06IPB010RC01-P955A45
datasheet
Output Inverter
Figure 6
Output inverter IGBT
Typical switching times as a
function of collector current
t = f(I C)
10,00
1,00
0,10
0,01
0,00
tdoff
tdon
tr
tf
0
2
4
6
8
10
I C (A)
With an inductive load at
T j =
125
400
15
°C
V
V CE
U CC
=
V
Figure 7
Output inverter FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I C)
0,35
trr
Tj = Tjmax -25°C
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
Tj = 25°C
0
2
4
6
8
10
12
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
copyright Vincotech
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datasheet
Output Inverter
Figure 8
Output inverter FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
1,0
Qrr
0,8
Tj = Tjmax -25°C
0,6
0,4
0,2
0,0
Tj = 25°C
Qrr
0
2
4
6
8
10
12
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
Figure 9
Output inverter FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
6
IRRM
Tj = Tjmax -25°C
IRRM
5
Tj = 25°C
4
3
2
1
0
0
2
4
6
8
10
12
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
copyright Vincotech
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20-1B06IPB010RC01-P955A45
datasheet
Output Inverter
Figure 10
Output inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I C)
600
dI0/dt
µ
µ
µ
µ
dIrec/dt
500
400
300
200
100
0
I C (A)
0
2
4
6
8
10
12
At
T j =
25/125
400
°C
V
V CE
U CC
=
15
V
Figure 11
Output inverter IGBT
Figure 12
Output inverter FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10110
10-5
10-4
10-3
10-2
10-1
100
10110
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
5,79
K/W
6,66
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,30
Tau (s)
6,6E+00
2,1Eꢀ01
4,9Eꢀ02
1,0Eꢀ02
2,9Eꢀ03
7,4Eꢀ04
R (K/W)
0,62
Tau (s)
3,1Eꢀ01
5,4Eꢀ02
2,3Eꢀ02
4,7Eꢀ03
9,8Eꢀ04
7,5Eꢀ04
0,61
3,07
3,21
0,76
0,84
1,19
0,56
0,95
0,26
0,08
copyright Vincotech
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datasheet
Output Inverter
Figure 13
Output inverter IGBT
Figure 14
Output inverter IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
35
30
25
20
15
10
5
12
9
6
3
0
0
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
T s
(
At
At
T j =
T j =
U CC
175
°C
175
15
°C
V
Figure 15
Power dissipation as a
Output inverter FWD
Figure 16
Forward current as a
Output inverter FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
30
25
20
15
10
5
12
9
6
3
0
0
0
50
100
150
200
o C)
T s (
o C)
0
50
100
150
200
T s
(
At
At
T j =
T j =
175
°C
175
°C
copyright Vincotech
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datasheet
Output Inverter
Figure 17
Output inverter IGBT
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
103
1mS
100uS
10mS
100mS
DC
102
101
100
10-1
103
100
VCE (V)
101
102
At
U CC
T j =
15
T jmax
V
ºC
Figure 18
Reverse bias safe operating area
Output inverter IGBT
I C = f(V CE
)
25
20
15
10
5
0
0
100
200
300
400
500
600
700
VCE (V)
At
T j
=
T jmaxꢀ25
ºC
copyright Vincotech
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datasheet
PFC
Figure 1
PFC IGBT
Figure 2
Typical output characteristics
PFC IGBT
Typical output characteristics
I C = f(V CE
)
I C = f(V CE)
120
120
100
80
100
80
60
60
40
40
20
20
0
0
0
0
1
2
3
4
5
6
1
2
3
4
5
6
VCE (V)
VCE (V)
At
At
t p
=
t p
=
250
25
ꢂs
°C
250
125
ꢂs
°C
T j =
T j =
U CC from 7 V to 17 V in steps of 1 V
U CC from 7 V to 17 V in steps of 1 V
Figure 3
PFC FWD
Typical diode forward current as
a function of forward voltage
I F = f(V F)
25
20
15
10
5
Tj = Tjmax-25°C
Tj = 25°C
0
0
1
1
2
2
3
3
VF (V)
At
t p
=
250
ꢂs
copyright Vincotech
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datasheet
PFC
Figure 4
PFC IGBT
Typical switching energy losses
as a function of collector current
E = f(I C)
0,5
0,4
0,3
0,2
0,1
0,0
Eon
Eon
Eoff
Eoff
0
5
10
15
20
I C (A)
With an inductive load at
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
Figure 5
PFC IGBT
Typical reverse recovery energy loss
as a function of collector current
E rec = f(I c)
0,08
Erec
Tj = Tjmax -25°C
0,06
0,04
0,02
0,00
Tj = 25°C
Erec
0
5
10
15
20
I C (A)
With an inductive load at
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
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datasheet
PFC
Figure 6
PFC IGBT
Typical switching times as a
function of collector current
t = f(I C)
1,00
0,10
0,01
0,00
tdoff
tdon
tr
tf
I C (A)
0
5
10
15
20
With an inductive load at
T j =
125
400
15
°C
V
V CE
U CC
=
=
V
Figure 7
PFC FWD
Typical reverse recovery time as a
function of collector current
t rr = f(I c)
0,05
0,04
0,03
0,02
0,01
0,00
trr
trr
0
5
10
15
20
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
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20-1B06IPB010RC01-P955A45
datasheet
PFC
Figure 8
PFC FWD
Typical reverse recovery charge as a
function of collector current
Q rr = f(I C)
0,6
Qrr
Tj = Tjmax - 25°C
0,5
0,4
0,3
0,2
0,1
0,0
Qrr
Tj = 25°C
0
5
10
15
20
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
Figure 9
PFC FWD
Typical reverse recovery current as a
function of collector current
I RRM = f(I C)
20
Tj = Tjmax - 25°C
IRRM
15
Tj = 25°C
IRRM
10
5
0
0
5
10
15
20
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
copyright Vincotech
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datasheet
PFC
Figure 10
PFC FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI 0/dt ,dI rec/dt = f(I c)
12000
10000
8000
6000
4000
2000
0
dI0/dt
dIrec/dt
0
5
10
15
20
I C (A)
At
T j =
25/125
400
°C
V
V CE
U CC
=
=
15
V
Figure 11
PFC IGBT
Figure 12
PFC FWD
IGBT transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
FWD transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
101
101
100
100
D = 0,5
D = 0,5
10-1
10-1
0,2
0,1
0,2
0,1
0,05
0,02
0,01
0,005
0,000
0,05
0,02
0,01
0,005
0,000
10-2
10-2
t p (s)
t p (s)
10-5
10-4
10-3
10-2
10-1
100
10110
10-5
10-4
10-3
10-2
10-1
100
1011 0
At
At
t p / T
t p / T
D =
D =
R th(j-s)
=
R th(j-s) =
4,96
K/W
5,48
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,42
Tau (s)
0,775
0,104
0,033
0,004
0,001
R (K/W)
0,20
Tau (s)
2,872
0,254
0,055
0,007
0,001
2,554
1,288
0,560
0,142
0,69
3,28
0,98
0,33
copyright Vincotech
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datasheet
PFC
Figure 13
PFC IGBT
Figure 14
PFC IGBT
Power dissipation as a
function of heatsink temperature
P tot = f(T s)
Collector current as a
function of heatsink temperature
I C = f(T s)
40
30
20
10
0
25
20
15
10
5
0
T s
(
o C)
T s (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
15
ºC
V
U CC
=
Figure 15
Power dissipation as a
PFC FWD
Figure 16
Forward current as a
PFC FWD
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
40
30
20
10
0
15
12
9
6
3
0
0
50
100
150
200
T s
(
o C)
T s (
o C)
0
50
100
150
200
At
At
T j =
T j =
175
ºC
175
ºC
copyright Vincotech
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31 Jan. 2017 / Revision 6
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20-1B06IPB010RC01-P955A45
datasheet
PFC
Figure 17
PFC IGBT
Safe operating area as a function
of collector-emitter voltage
I C = f(V CE
)
103
102
10uS
100mS
1mS
100uS
10mS
101
DC
100
10-1
102
101
VCE (V)
103
At
single pulse
D =
T s =
80
ºC
U CC
=
15
V
T jmax
T j =
Figure 18
Reverse bias safe operating area
PFC IGBT
I C = f(V CE
)
70
60
50
40
30
20
10
0
0
100
200
300
400
500
600
700
VCE (V)
At
T j =
T jmaxꢀ25
ºC
copyright Vincotech
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datasheet
Input Rectifier Diode
Figure 1
Rectifier Diode
Figure 2
Rectifier Diode
Typical diode forward current as
a function of forward voltage
I F= f(V F)
Diode transient thermal impedance
as a function of pulse width
Z th(j-s) = f(t p)
25
20
15
10
101
100
D = 0,5
0,2
10-1
0,1
0,05
0,02
0,01
0,005
0,000
5
Tj = 25°C
Tj = Tjmax-25°C
0
10-2
0,0
0,5
1,0
1,5
2,0
10-5
10-4
10-3
10-2
10-1
100
10110
t p (s)
VF (V)
At
At
t
p / T
t p
=
250
ꢂs
D =
R th(j-s)
=
4,56
K/W
Figure 3
Power dissipation as a
Rectifier diode
Figure 4
Forward current as a
Rectifier diode
function of heatsink temperature
function of heatsink temperature
P tot = f(T s)
I F = f(T s)
35
30
25
20
15
10
5
15
12
9
6
3
0
0
o C)
T s (
o C)
0
30
60
90
120
150
T s
(
0
30
60
90
120
150
At
At
T j =
T j =
150
ºC
150
ºC
copyright Vincotech
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datasheet
Shunt
Figure 1
PFC Shunt
Figure 2
DC Shunt
Pulse Power R1
Pulse Power R2
103
103
Single
Repetitive
Single
Repetitive
102
102
101
100
101
100
10ꢀ1
100
102
103
104
101
t pulse (ms)
t pulse (ms)
10ꢀ1
100
101
102
103
104
dR /R 0 < 5% after 1 pulse
dR /R 0 < 5% after 10.000 cycles; duty cycle< 0,1%
dR /R 0 < 1% after 1 pulse
dR /R 0 < 1% after 10.000 cycles; duty cycle< 0,1%
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
R T = f(T )
NTC-typical temperature characteristic
24000
20000
16000
12000
8000
4000
0
25
45
65
85
105
125
T (°C)
copyright Vincotech
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datasheet
Switching Definitions Output Inverter
General conditions
T j
=
125 °C
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of t doff, t Eoff
Turn-on Switching Waveforms & definition of t don, t Eon
(t E off = integrating time for E off
)
(t E on = integrating time for E on)
125
200
%
IC
tdoff
%
VCE
100
75
50
25
0
150
100
VCE 90%
UIN 90%
IC
UIN
UIN
VCE
tdon
tEoff
50
VCE 3%
UIN10%
IC10%
IC 1%
0
tEon
-25
-50
-0,2
0
0,2
0,4
0,6
0,8
1
1,2
2,9
3,1
3,3
3,5
3,7
3,9
time(us)
time (us)
U IN (0%) =
0
5
V
U IN (0%) =
0
V
U IN (100%) =
V C (100%) =
I C (100%) =
V
U IN (100%) =
V C (100%) =
I C (100%) =
5
V
400
V
400
6
V
6
A
A
t doff
=
=
0,95
1,11
ꢂs
ꢂs
t don
=
=
0,63
0,83
ꢂs
ꢂs
t E off
t E on
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of t f
Turn-on Switching Waveforms & definition of t r
125
200
fitted
%
%
VCE
IC
175
150
125
100
IC 90%
75
50
25
0
VCE
IC
60%
100
IC90%
IC 40%
75
tr
50
25
IC10%
tf
IC10%
Ic
0
-25
-25
0,6
0,7
0,8
0,9
1
1,1
1,2
3,5
3,6
3,7
3,8
3,9
4
time(us)
time (us)
V C (100%) =
I C (100%) =
t f =
400
6
V
V C (100%) =
I C (100%) =
t r =
400
6
V
A
A
0,02
ꢂs
0,03
ꢂs
copyright Vincotech
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datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of t Eoff
Turn-on Switching Waveforms & definition of t Eon
125
200
%
Pon
%
Eoff
100
150
Poff
75
50
Eon
100
50
0
25
IC
UIN 10%
VCE
3%
1%
UIN 90%
tEon
0
tEoff
-50
-25
2,9
3,1
3,3
3,5
3,7
3,9
-0,2
0
0,2
0,4
0,6
0,8
1
1,2
time(us)
time (us)
P off (100%) =
E off (100%) =
2,39
kW
mJ
ꢂs
P on (100%) =
E on (100%) =
2,39
0,32
0,83
kW
mJ
ꢂs
0,20
1,11
t E off
=
t E on =
Figure 7
Output inverter FWD
Turn-off Switching Waveforms & definition of t rr
120
Id
%
80
trr
40
fitted
Vd
0
IRRM10%
-40
-80
IRRM 90%
IRRM 100%
-120
3,5
3,6
3,7
3,8
3,9
4
time(us)
V d (100%) =
I d (100%) =
I RRM (100%) =
400
6
V
A
ꢀ6
A
t rr
=
0,28
ꢂs
copyright Vincotech
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datasheet
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Figure 9
Output inverter FWD
Turn-on Switching Waveforms & definition of t Qrr
Turn-on Switching Waveforms & definition of t Erec
(t Q rr = integrating time for Q rr
)
(t Erec= integrating time for E rec)
150
125
%
%
Erec
Id
Qrr
100
100
tQrr
tErec
50
75
50
25
0
0
-50
Prec
-100
-150
-25
3,5
3,6
3,7
3,8
3,9
4
4,1
4,2
4,3
3,6
3,8
4
4,2
4,4
time(us)
time(us)
I d (100%) =
Q rr (100%) =
6
A
P rec (100%) =
E rec (100%) =
2,39
0,16
0,59
kW
0,67
0,59
ꢂC
ꢂs
mJ
ꢂs
t Q rr
=
t E rec =
copyright Vincotech
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datasheet
Application data
Static logic funtion table
V CC
<V CCUV–
15V
V BS
X
RCIN
ITRIP
ENABLE
X
FAULT
0
LO1,2,3
0
HO1,2,3
X
X
X
0
0
0
<V BSUV–
3.3V
High imp /LIN1,2,3
15V
15V
15V
15V
15V
15V
15V
15V
<3.2V↓
X
0
3.3V
3.3V
3.3V
0
0
0
0
0
0
0
> V IT,TH+
> V RCIN,TH
> V RCIN,TH
0
0
High imp /LIN1,2,3 /HIN1,2,3
High imp
0
0
Pin Descriptions
Pin #
Pin Name
Pin Description
1
2
NTC2
NTC1
Temperature sensor connector 1
Temperature sensor connector 2
Inverter sense resistor highꢀside
Inverter sense resistor lowꢀside
Enable I/O functionality
3
InvS +
InvS ꢀ
EN
4
5
6
¬Fault
¬LIN3
¬LIN2
¬LIN1
¬HIN3
¬HIN2
Fault output, indicates over current or under voltage (negative logic, openꢀdrain output)
Signal input for lowꢀside W phase
7
8
Signal input for lowꢀside V phase
9
Signal input for lowꢀside U phase
10
11
Signal input for highꢀside W phase
Signal input for highꢀside V phase
12
13
¬HIN1
VCC
Signal input for highꢀside U phase
Driver circuit supply voltage
14
15
16
17
18
19
20
21
22
23
24
25
26
27
GND2
GND
Inverter ground
PFC gate driver GND
PFC Switch gate driver input
Rectifier input
GATE
AC1
AC2
Rectifier input
DC1 + (coil)
PFC + (coil)
DC1 ꢀ
PFC ꢀ
DC2 ꢀ
DC2 +
W
Rectifier output DC +
PFC coil connector
Rectifier output DC ꢀ
PFC return
Inverter input DC ꢀ
Inverter input DC +
Output for W phase
Output for V phase
Output for U phase
V
U
copyright Vincotech
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20-1B06IPB010RC01-P955A45
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
without thermal paste, solder pins
Ordering Code
20ꢀ1B06IPB004RC01ꢀP955A45
20ꢀ1B06IPB004RC01ꢀP955A45ꢀ/3/
20ꢀPB06IPB004RC01ꢀP955A45Y
20ꢀPB06IPB004RC01ꢀP955A45Yꢀ/3/
with thermal paste, solder pins
without thermal paste, press fit pins
with thermal paste, press fit pins
Name
Type&Ver
TTTTTTTVV
Serial
Date code
VIN&Lot
Serial&UL
Text
NNꢀNNNNNNNNNNNNNN
WWYY
VIN LLLLL
SSSS UL
Type&Ver
TTTTTTTVV
Lot number
LLLLL
Date code
WWYY
Datamatrix
SSSS
Outline
Pin table
Pin
X
Y
Function
1
45
42
0
0
NTC2
NTC1
Inv_S+
Inv_Sꢀ
EN
2
3
39
0
4
36
0
5
33
0
6
30
0
FAULT
LIN3
LIN2
LIN1
HIN3
HIN2
HIN1
VCC
7
27
0
8
24
0
9
21
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
18
0
15
0
12
0
9
0
6
0
GND2
GND
GATE
AC1
3
0
0
0
ꢀ0,2
4,8
9,8
14,8
19,8
22,5
25,2
30,2
35,2
40,2
45,2
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
26,4
AC2
DC1+
PFC+
DC1ꢀ
PFCꢀ
DC2ꢀ
DC2+
W
V
U
copyright Vincotech
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datasheet
Ordering Code and Marking - Outline - Pinout
Pinout
Identification
ID
Component
IGBT
Voltage Current
Function
Inverter Transistor
PFC IGBT
Comment
T1,T2,T3,T4,T5,T6
600 V
650 V
650 V
650 V
10 A
30 A
30 A
6 A
T7
IGBT
D12
FWD
PFC Diode
D11
FWD
PFC Inverse Diode
PFC Shunt
R3
Resistor
Rectifier
Resistor
Capacitor
Thermistor
D7,D8,D9,D10
1600 V
500 V
12 A
Input Rectifier Diode
DC Shunt
R2
C1
T
DC Link Capacitor
Thermistor
copyright Vincotech
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datasheet
Packaging instruction
Standard packaging quantity (SPQ)
>SPQ
Standard
<SPQ
Sample
100
Handling instruction
Handling instructions for flow 1B packages see vincotech.com website.
Package data
Package data for flow 1B packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
4ꢀ6
20ꢀxB06IPB004RC01ꢀP955A45xꢀD6ꢀ14
31 Jan. 2017
Correction condition values
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to reader in good
faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations that may exist or occur.
Vincotech reserves the right to make any changes without further notice to any products to improve reliability, function or design. No representation,
guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said information or that the application or use of any of the same
will avoid hazards, accidents, losses, damages or injury of any kind to persons or property or that the same will not infringe third parties rights or give
desired results. It is reader’s sole responsibility to test and determine the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c)
whose failure to perform when properly used in accordance with instructions for use provided in la
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the
life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
30
31 Jan. 2017 / Revision 6
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