30-F212PMA050M7-L888A79 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 30-F212PMA050M7-L888A79 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总34页 (文件大小：4725K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
1200 V / 50 A
flow PIM 2
Features
flow 2 housing
● IGBT M7 with low V CEsat and improved EMC behavior
● Open emitter configuration
● Compact and low inductive design
● Built-in NTC
Solder pins
Press-fit pins
Schematic
Target applications
● Industrial Drives
Types
● 30-F212PMA050M7-L888A79
● 30-F212PMA050M7-L888A79-/3/
● 30-P212PMA050M7-L888A79Y
● 30-P212PMA050M7-L888A79Y-/3/
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Rectifier Diode
VRRM
Peak repetitive reverse voltage
1600
71
V
A
IF
IFSM
I2t
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
490
1200
106
150
A
50 Hz Single Half Sine Wave
tp = 8,3 ms
Tj = 150 °C
Ts = 80 °C
A2s
W
°C
Ptot
Tjmax
Total power dissipation
Tj = Tjmax
Maximum junction temperature
Copyright Vincotech
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30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
70
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
100
162
±20
175
A
W
V
Maximum junction temperature
°C
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
54
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
tp limited by Tjmax
Tj = Tjmax
100
101
175
A
W
°C
Tjmax
Maximum junction temperature
Brake Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
50
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
70
A
132
±20
175
W
V
Maximum junction temperature
°C
Brake Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
35
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj limited by Tjmax
Tj = Tjmax
50
A
70
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Brake Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
1200
7
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
Ptot
10
A
Tj = Tjmax
34
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
V
Visol
Isolation voltage
Creepage distance
Clearance
tp = 1 min
Press-fit pins
Solder pins
min. 12,7
mm
mm
Press-fit pins
Solder pins
11,58
11,82
> 200
Operation temperature under switching condition
*100% tested in production
CTI
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30-P212PMA050M7-L888A79Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Rectifier Diode
Static
25
1,14
1,08
1,07
1,7
VF
IR
Forward voltage
50
125
150
25
V
50
Reverse leakage current
1600
µA
150
1100
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,66
K/W
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
VGE = VCE
Gate-emitter threshold voltage
0,005
50
25
5,4
6
6,6
1,9
V
V
25
1,55
1,77
1,83
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
90
µA
nA
Ω
15
500
none
10000
350
Cies
Coes
Cres
Qg
Output capacitance
10
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
130
15
600
50
410
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
Rth(j-s)
0,59
K/W
Dynamic
25
176
176
190
52
td(on)
125
150
25
Turn-on delay time
tr
Rise time
125
150
25
125
150
25
125
150
25
125
150
25
58
60
Rgoff = 8 Ω
Rgon = 8 Ω
ns
206
229
241
92
125
122
4,82
6,38
6,25
2,98
4,25
5,03
td(off)
Turn-off delay time
Fall time
±15
600
50
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 4,9 μC
= 7,1 μC
= 8 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
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30-P212PMA050M7-L888A79Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,66
1,78
1,79
2,15
50
Forward voltage
VF
IR
50
125
150
25
V
Reverse leakage current
1200
µA
150
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,94
K/W
Dynamic
25
29
IRRM
Peak recovery current
125
150
25
125
150
25
125
150
25
125
150
25
33
33
A
339
435
511
4,93
7,08
8,04
1,79
2,59
3,33
195
128
114
trr
Qr
Reverse recovery time
ns
di/dt = 338 A/μs
di/dt = 450 A/μs ±15
di/dt = 498 A/μs
600
50
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
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30-P212PMA050M7-L888A79Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Switch
Static
VGE(th)
VGE = VCE
Gate-emitter threshold voltage
0,0035 25
25
5,4
6
6,6
V
V
1,48
1,64
1,68
1,85
VCEsat
Collector-emitter saturation voltage
15
35
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
80
µA
nA
Ω
20
500
none
7900
270
97
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
15
600
35
260
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink
Rth(j-s)
0,72
K/W
Dynamic
25
199
172
167
111
109
110
438
485
497
65
td(on)
125
150
25
125
150
25
125
150
25
Turn-on delay time
tr
Rise time
Rgoff = 16 Ω
Rgon = 16 Ω
ns
td(off)
Turn-off delay time
Fall time
15/0
700
35
tf
125
150
25
125
150
25
100
107
4,87
5,85
6,10
3,00
3,88
4,10
Qr
FWD
Qr
FWD
Qr
FWD
= 2,8 μC
= 4,5 μC
= 5,1 μC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
mWs
Eoff
125
150
Copyright Vincotech
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30-P212PMA050M7-L888A79Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Brake Diode
Static
25
1,63
1,70
1,69
2,1
35
Forward voltage
VF
IR
25
125
150
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
1,36
K/W
Dynamic
25
18
20
20
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
Peak recovery current
A
269
397
449
2,81
4,53
5,09
1,12
1,92
2,21
132
80
trr
Qr
Reverse recovery time
ns
di/dt = 310 A/μs
di/dt = 311 A/μs
di/dt = 260 A/μs
15/0
700
35
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
77
Brake Sw. Protection Diode
Static
25
1,57
1,65
1,65
2,1
20
Forward voltage
VF
IR
5
125
150
V
Reverse leakage current
1200
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
2,76
K/W
Copyright Vincotech
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30-P212PMA050M7-L888A79Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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30-P212PMA050M7-L888A79Y
datasheet
Rectifier Diode Characteristics
figure 1.
Rectifer
figure 2.
Rectifer
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,66
Tj:
R th(j-s)
K/W
Rectifer thermal model values
R (K/W)
τ
(s)
2,64E-02
6,63E-02
1,36E-01
3,29E-01
6,63E-02
3,95E-02
1,18E+01
1,18E+00
1,65E-01
4,29E-02
1,04E-02
1,49E-03
Copyright Vincotech
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30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,59
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
3,16E-02
5,30E-02
1,21E-01
2,39E-01
9,09E-02
2,38E-02
2,73E-02
4,80E+00
1,05E+00
1,71E-01
4,01E-02
1,21E-02
1,71E-03
3,65E-04
Copyright Vincotech
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30-P212PMA050M7-L888A79Y
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
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30-P212PMA050M7-L888A79Y
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
0,94
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,03E-02
8,14E-02
2,71E-01
3,67E-01
9,51E-02
7,76E-02
3,45E+00
4,50E-01
7,41E-02
2,11E-02
3,99E-03
4,74E-04
Copyright Vincotech
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30-P212PMA050M7-L888A79Y
datasheet
Brake Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,72
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
3,93E-02
7,23E-02
1,28E-01
3,10E-01
1,08E-01
3,17E-02
3,18E-02
5,07E+00
9,25E-01
1,58E-01
3,68E-02
1,02E-02
1,41E-03
3,39E-04
Copyright Vincotech
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30-P212PMA050M7-L888A79Y
datasheet
Brake Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
Ts
=
80
ºC
V
VGE
=
±15
Tjmax
Tj =
Copyright Vincotech
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datasheet
Brake Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
75
60
45
30
15
0
Z
100
0,5
10-1
0,2
0,1
0,05
0,02
0,01
0,005
0
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp (s)
0
1
2
3
4
5
VF (V)
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
1,36
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,30E-02
7,33E-02
1,84E-01
5,52E-01
2,85E-01
1,16E-01
1,06E-01
6,93E+00
1,01E+00
1,33E-01
2,95E-02
7,43E-03
1,34E-03
3,07E-04
Copyright Vincotech
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datasheet
Brake Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
2,76
K/W
FWD thermal model values
R (K/W)
τ
(s)
6,58E-02
1,43E-01
6,08E-01
8,65E-01
7,08E-01
3,69E-01
4,81E+00
3,47E-01
4,61E-02
1,40E-02
2,91E-03
5,42E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
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30-P212PMA050M7-L888A79Y
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
8
V
V
Ω
Ω
j
:
600
±15
50
V
V
A
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
8
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
8
V
V
Ω
:
600
±15
50
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
600
±15
8
°C
V
150
600
±15
50
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
8
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
600
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
±15
8
:
Tj
VGE
I C
=
±15
50
:
Tj
VGE
R gon
=
=
=
Copyright Vincotech
19
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
600
600
±15
8
V
V
Ω
25 °C
125 °C
150 °C
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
±15
50
:
Tj
=
=
Tj
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
600
±15
8
V
V
Ω
25 °C
125 °C
150 °C
600
±15
50
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
VGE
=
=
=
R gon
=
Copyright Vincotech
20
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/
dt
t
t
i
dirr/dt
i
dir r
/
dt
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
50
V
V
A
25 °C
±15
8
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj
=
=
=
175
°C
Ω
R gon
R goff
8
8
Ω
Copyright Vincotech
21
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Inverter Switching Definitions
General conditions
=
=
=
125 °C
8 Ω
T j
Rgon
R goff
8 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VCE
VGE
IC
VGE
tEoff
VCE
tEon
-15
VGE (0%) =
-15
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
50
V
600
50
V
A
A
0,229
0,683
μs
μs
0,176
0,561
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
600
50
V
VC (100%) =
I C (100%) =
600
50
V
A
A
0,125
μs
tr
=
0,058
μs
Copyright Vincotech
22
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eoff
Eon
Pon
Poff
tEon
tEoff
30
kW
mJ
μs
30
kW
mJ
μs
P off (100%) =
Eoff (100%) =
P on (100%) =
Eon (100%) =
4,25
0,68
6,38
0,56
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
600
50
V
A
-33
0,435
A
μs
t rr
=
Copyright Vincotech
23
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Inverter Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
Erec
IF
Qr
tErec
Prec
50
A
30,00
2,59
0,88
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
7,08
0,88
μC
μs
mJ
μs
t Qr
=
tErec =
Copyright Vincotech
24
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Brake Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
700
15/0
16
V
V
j
:
700
15/0
35
V
V
A
VCE
VGE
=
=
=
=
T
VCE
VGE
I C
=
=
=
Tj:
R gon
R goff
Ω
Ω
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
700
15/0
16
V
V
Ω
:
700
15/0
35
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
25
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
150
700
15/0
16
°C
150
700
15/0
35
°C
V
Tj =
Tj =
VCE
=
=
=
=
V
V
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
700
700
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
15/0
16
:
Tj
VGE
I C
=
15/0
35
:
Tj
VGE
R gon
=
=
=
Copyright Vincotech
26
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Brake Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
700
700
15/0
16
V
V
Ω
25 °C
125 °C
150 °C
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
15/0
35
:
Tj
=
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
700
15/0
16
V
V
Ω
25 °C
125 °C
150 °C
700
15/0
35
V
V
A
25 °C
125 °C
150 °C
At
VCE
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
VGE
=
=
=
R gon
=
Copyright Vincotech
27
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Brake Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
diF/
dt
t
t
i
dirr/dt
i
dir r
/
dt
700
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
700
V
V
A
25 °C
15/0
16
:
Tj
15/0
35
:
Tj
125 °C
150 °C
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj
=
=
=
175
16
°C
Ω
R gon
R goff
16
Ω
Copyright Vincotech
28
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Brake Switching Definitions
General conditions
=
=
=
125 °C
16 Ω
T j
R gon
Rgoff
16 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff
=
integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VGE
VCE
IC
VGE
tEoff
VCE
tEon
0
V
0
V
VGE (0%) =
VGE (0%) =
15
V
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
700
35
V
700
35
V
A
A
t doff
t Eoff
=
=
0,485
0,973
μs
μs
tdon
tEon
=
=
0,172
0,642
μs
μs
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
VCE
IC
tr
VCE
tf
700
VC (100%) =
I C (100%) =
t f =
700
35
V
VC (100%) =
I C (100%) =
V
A
35
A
0,100
μs
tr
=
0,109
μs
Copyright Vincotech
29
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Brake Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Eoff
Pon
Eon
Poff
tEoff
tEon
24,56
3,88
0,97
kW
mJ
μs
24,56
5,85
0,64
kW
mJ
μs
P off (100%) =
Eoff (100%) =
P on (100%) =
Eon (100%) =
t Eoff
=
tEon =
figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
IF
VF
fitted
VF (100%) =
I F (100%) =
I RRM (100%) =
700
35
V
A
-20
0,397
A
μs
t rr
=
Copyright Vincotech
30
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Brake Switching Characteristics
figure 8.
FWD
figure 9.
FWD
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turn-on Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec)
IF
Erec
Qr
tErec
Prec
35
A
24,56
1,92
0,80
kW
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
4,53
0,80
μC
μs
mJ
μs
t Qr
=
tErec =
Copyright Vincotech
31
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Ordering Code & Marking
Version
without thermal paste 17 mm housing with solder pins
with thermal paste 17 mm housing with solder pins
without thermal paste 17 mm housing with press-fit pins
with thermal paste 17 mm housing with press-fit pins
Ordering Code
30-F212PMA050M7-L888A79
30-F212PMA050M7-L888A79-/3/
30-P212PMA050M7-L888A79Y
30-P212PMA050M7-L888A79Y-/3/
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
1
X
Y
0
Function
DC-Rect
DC-Rect
DC-Rect
DC-Rect
DC+Rect
DC+Rect
DC+Rect
DC+Rect
DC+Inv1
DC+Inv1
S11
Pin
52
53
54
55
56
52
53
54
55
56
X
Y
Function
ACIn3
Br
71,2
68,7
66,2
63,7
55,95
53,45
55,95
53,45
48,4
45,9
38,9
36,1
38,9
36,1
31,3
28,5
31,3
28,5
19,3
19,3
12,3
71,2
71,2
68,7
71,2
71,2
71,2
71,2
68,7
71,2
71,2
20,2
12,8
12,8
5,6
2
3
0
0
Br
4
0
G27
5
0
2,8
DC-Br
ACIn3
Br
6
0
20,2
12,8
12,8
5,6
7
2,8
2,8
0
8
Br
9
G27
10
11
12
13
14
15
16
17
18
19
20
21
0
2,8
DC-Br
0
0
2,8
2,8
0
Solder pins
DC-1
G11
DC-1
DC-2
0
S13
2,8
2,8
0
DC-2
G13
Therm2
Therm1
DC+Inv2
2,8
0
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
9,8
12,3
9,8
0
DC+Inv2
DC+Inv2
DC+Inv2
S15
Press-fit pins
2,8
2,8
2,8
0
0
0
DC-3
G15
2,8
2,8
0
2,8
DC-3
Ph3
0
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
37,2
34,7
32,2
25,2
22,7
2,5
Ph3
5
Ph3
7,8
S16
10,6
18,45
21,25
24,05
26,55
29,05
36,1
38,6
41,1
43,9
46,7
53,7
56,2
58,7
71,2
71,2
71,2
71,2
71,2
G16
G14
S14
Ph2
Ph2
Ph2
Ph1
Ph1
Ph1
S12
G12
ACIn1
ACIn1
ACIn1
ACIn2
ACIn2
ACIn2
ACIn3
ACIn3
Copyright Vincotech
32
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
D31, D32, D33, D34,
D35, D36
Rectifier
1200 V
50 A
50 A
50 A
Rectifier Diode
Inverter Switch
Inverter Diode
T11, T12, T13, T14,
T15, T16
IGBT
FWD
1200 V
1200 V
D11, D12, D13, D14,
D15, D16
T27
D27
D47
Rt
IGBT
FWD
Diode
NTC
1200 V
1200 V
1200 V
35 A
25 A
5 A
Brake Switch
Brake Diode
Brake Sw. Protection Diode
Thermistor
Copyright Vincotech
33
08 Mar. 2019 / Revision 4
30-F212PMA050M7-L888A79
30-P212PMA050M7-L888A79Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-x212PMA050M7-L888A79x-D4-14
08 Mar. 2019
Correction of Ic/If values
1,2,3
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
34
08 Mar. 2019 / Revision 4
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