30-P2126PA100SC-L289F09Y [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;型号: | 30-P2126PA100SC-L289F09Y |
厂家: | VINCOTECH |
描述: | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
文件: | 总17页 (文件大小:1612K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
30-P2126PA100SC-L289F09Y
datasheet
1200 V / 100 A
flow PACK 2
Features
flow 2 17 mm housing
● IGBT4 (1200 V) technology for low saturation losses and
improved EMC behavior
● Compact and low inductive design
● Integrated temperature sensor
Schematic
Target applications
● Industrial Drives
Types
● 30-P2126PA100SC-L289F09Y
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collector-emitter voltage
1200
116
300
307
±20
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
tSC
Tj ≤ 150 °C
VGE = 15 V
10
µs
V
Short circuit ratings
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
Copyright Vincotech
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30-P2126PA100SC-L289F09Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
1200
96
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80°C
Ts = 80°C
200
176
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum Junction Temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
AC Voltage
tp = 2 s
4000
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
min. 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
VCEsat
ICES
Gate-emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
VGE = VCE
0,0034 25
5,3
5,8
6,3
V
V
25
100
1,58
1,88
2,30
2,07
15
0
150
1200
0
25
25
2
µA
nA
Ω
IGES
rg
20
240
2
Cies
Input capacitance
5600
200
f = 1 MHz
0
25
25
pF
Cres
Reverse transfer capacitance
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,31
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
25
104
108
18
23
219
293
72
111
4,040
6,729
5,249
8,769
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
Rgoff = 4 Ω
Rgon = 4 Ω
ns
Turn-off delay time
Fall time
±15
600
100
Qr
Qr
= 9,3 μC
= 18,7 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
150
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30-P2126PA100SC-L289F09Y
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
100
1,35
1,83
1,86
2,05
18
VF
Ir
Forward voltage
V
125
25
Reverse leakage current
1200
150
µA
Thermal
phase-change
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
0,54
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
164
187
130
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
294
di/dt = 6900 A/μs
di/dt = 5512 A/μs
9,320
18,656
3,869
7,956
8743
3702
±15
600
100
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
R
ΔR/R
P
Rated resistance
25
100
25
25
25
25
22
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1486 Ω
-12
+14
200
2
mW
mW/K
K
B(25/50) Tol. ±3%
B(25/100) Tol. ±3%
3950
3998
B-value
K
Vincotech NTC Reference
B
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datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
Tj:
VGE
=
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10-1
10-2
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
150 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
=
0,31
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
6,00E-02
7,30E-02
1,19E-01
4,31E-02
1,45E-02
1,67E+00
2,35E-01
5,35E-02
1,45E-02
1,21E-03
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datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
I
I
I
D =
single pulse
80
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
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datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
D = 0,5
0,2
0,1
0,05
0,02
0,01
0,005
0,000
10-2
10-4
=
10-3
10-2
10-1
100
101
102
D =
R th(j-s)
tp
=
250
μs
25 °C
125 °C
150 °C
tp / T
0,54
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
3,2540E-02
5,0100E-02
1,3800E-01
2,2240E-01
5,6920E-02
3,9240E-02
4,1350E+00
9,8970E-01
1,4500E-01
3,3740E-02
9,5120E-03
7,9710E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Typical NTC characteristic
Thermistor
as a function of temperature
R = f(T)
Copyright Vincotech
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30-P2126PA100SC-L289F09Y
datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(rg)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
4
V
V
Ω
Ω
T
j
:
VCE
VGE
I C
=
=
=
600
±15
100
V
V
A
Tj:
125 °C
150 °C
VCE
VGE
=
=
=
=
R gon
R goff
4
Figure 3.
FWD
Figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(r g )
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
600
±15
4
V
V
Ω
:
600
±15
100
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
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30-P2126PA100SC-L289F09Y
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(r g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
4
°C
V
150
600
±15
100
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
4
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
600
25 °C
At
VCE
=
V
25 °C
125 °C
150 °C
At
VCE
=
600
±15
100
V
V
A
:
:
Tj
125 °C
150 °C
VGE
R gon
=
=
±15
4
V
VGE
I C
=
Tj
Ω
=
Copyright Vincotech
9
13 Jul. 2017 / Revision 3
30-P2126PA100SC-L289F09Y
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
±15
4
V
V
Ω
25 °C
125 °C
150 °C
600
±15
100
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
Tj
:
Tj
=
=
=
=
Figure 11.
FWD
Figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
V
A
At
VCE
=
600
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
=
600
±15
100
25 °C
:
Tj
:
Tj
125 °C
150 °C
VGE
=
=
VGE
I C
=
V
R gon
=
Copyright Vincotech
10
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30-P2126PA100SC-L289F09Y
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
dir r/dt
t
t
t
t
diF/dt
t
t
t
t
i
i
i
i
dirr/dt
i
i
i
i
At
VCE
=
600
±15
4
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
100
V
V
A
25 °C
125 °C
150 °C
:
Tj
:
Tj
VGE
=
=
=
R gon
=
Figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
Ω
R gon =
R goff =
4
4
Ω
Copyright Vincotech
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datasheet
Inverter Switching Definitions
General conditions
=
=
=
150 °C
4 Ω
T j
Rgon
R goff
4 Ω
Figure 1.
IGBT
Figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VCE
VGE
IC
VCE
VGE
tEoff
tEon
-15
VGE (0%) =
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
V
600
V
100
A
100
A
0,293
0,665
μs
μs
0,108
0,339
μs
μs
t doff
t Eoff
=
=
tdon
tEon
=
=
Figure 3.
IGBT
Figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
VCE
IC
IC
VCE
tr
tf
600
V
600
100
0,023
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
100
A
A
0,111
μs
μs
tr
=
Copyright Vincotech
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datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
Pon
Poff
Eoff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
60,25
kW
mJ
μs
P on (100%) =
Eon (100%) =
60,25
6,73
0,34
kW
8,77
0,67
mJ
μs
t Eoff
=
tEon =
Figure 7.
FWD
Turn-off Switching Waveforms & definition of trr
Id
Vd
fitted
Vd (100%) =
I d (100%) =
I RRM (100%) =
600
100
V
A
-187
A
0,294
μs
t rr
=
Copyright Vincotech
13
13 Jul. 2017 / Revision 3
30-P2126PA100SC-L289F09Y
datasheet
Inverter Switching Characteristics
Figure 8.
FWD
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Id
Qrr
Erec
tErec
Prec
100
A
60,25
7,96
0,70
kW
mJ
μs
I d (100%) =
P rec (100%) =
Erec (100%) =
Q rr (100%) =
18,66
0,70
μC
μs
t Qrr
=
tErec =
Copyright Vincotech
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13 Jul. 2017 / Revision 3
30-P2126PA100SC-L289F09Y
datasheet
Ordering Code & Marking
Version
with thermal paste 17 mm housing with press-fit pins
without thermal paste 17 mm housing with press-fit pins
Ordering Code
30-P2126PA100SC-L289F09Y-/3/
30-P2126PA100SC-L289F09Y
Name
Date code
WWYY
Serial
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
Pin table
Pin
X
Y
0
Function
S11
0,9
1
2
0,9
3
G11
3
3,9
0
DC-1
DC-1
DC-1
DC-1
DC+1
DC+1
DC+1
DC+1
S13
4
3,9
2,7
5,4
0
5
3,9
6
6,6
7
15,2
15,2
17,9
17,9
26,2
26,2
29,2
29,2
29,2
31,9
32,2
40,5
40,5
43,2
43,2
51,5
0
8
2,7
0
9
10
11
12
13
14
15
16
17
18
19
20
21
22
2,7
0
3
G13
0
DC-2
DC-2
DC-2
DC-2
NTC
2,7
5,4
0
4,05
0
DC+2
DC+2
DC+2
DC+2
S15
2,7
0
2,7
0
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
51,5
54,5
54,5
54,5
57,2
65,8
65,8
68,5
68,5
64,7
61,7
58,7
56
3
G15
DC-3
DC-3
DC-3
DC-3
DC+3
DC+3
DC+3
DC+3
G16
0
2,7
5,4
0
0
2,7
0
2,7
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
36
S16
PH3
PH3
53,3
50,6
39,4
36,4
33,4
30,7
28
PH3
PH3
G14
S14
PH2
PH2
PH2
25,3
14,1
11,1
8,1
PH2
G12
S12
PH1
5,4
PH1
2,7
0
PH1
PH1
Copyright Vincotech
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30-P2126PA100SC-L289F09Y
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11 , T12 , T13 ,
T14 , T15 , T16
IGBT
1200 V
100 A
100 A
Inverter Switch
D11 , D12 , D13 ,
D14 , D15 , D16
FWD
NTC
1200 V
Inverter Diode
Thermistor
NTC
Copyright Vincotech
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30-P2126PA100SC-L289F09Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-P2126PA100SC-L289F09Y-D3-14
13 Jul. 2017
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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13 Jul. 2017 / Revision 3
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Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC
VINCOTECH
30-PT073AA100SM02-LN55L88Y
High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
VINCOTECH
30-PT07NAA300S501-LF64F58Y
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
30-PT07NIA450S501-PD68F58Y
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
30-PT07NIA600S501-PD60F58Y
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
30-PT07NIB200S502-LE04F58Y
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage
VINCOTECH
30-PT07NIB200SG02-L965F08Y
High speed switching;Low EMI;Low turn-off losses;Low collector emitter saturation voltage
VINCOTECH
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