30-PT07NIA600S501-PD60F58Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;型号: | 30-PT07NIA600S501-PD60F58Y |
厂家: | VINCOTECH |
描述: | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
文件: | 总29页 (文件大小:8713K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
30-PT07NIA600S501-PD60F58Y
datasheet
flowNPC 2
650 V / 600 A
Topology features
flow 2 13 mm housing
● Integrated DC capacitor
● Kelvin Emitter for improved switching performance
● Neutral Point Clamped Topology (I-Type)
● Split topology
● Temperature sensor
Component features
● High speed and smooth switching
● Low gate charge
● Very low collector emitter saturation voltage
Housing features
● Base isolation: Al2O3
● Convex shaped baseplate for superior thermal contact
● Cu baseplate
Schematic
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Target applications
● Industrial Drives
● Solar Inverters
● UPS
Types
● 30-PT07NIA600S501-PD60F58Y
Copyright Vincotech
1
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
650
336
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
Tj = Tjmax
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = 150°C, VCE = 1200 V
Tj = Tjmax
1200
1200
500
A
A
Ptot
Ts = 80 °C
W
V
VGES
Gate-emitter voltage
±20
175
Tjmax
Maximum junction temperature
°C
Buck Diode
VRRM
Peak repetitive reverse voltage
650
250
750
311
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Switch
VCES
Collector-emitter voltage
650
285
1350
1350
403
±20
3
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Turn off safe operating area
Total power dissipation
Tj = Tjmax
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = 150°C, VCE = 1200 V
Tj = Tjmax
A
A
Ptot
VGES
tSC
Ts = 80 °C
W
V
Gate-emitter voltage
Short circuit ratings
VGE = 15 V, VCC = 400 V
Tj = 150 °C
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Diode
VRRM
Peak repetitive reverse voltage
650
204
600
255
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Inv. Diode
VRRM
Peak repetitive reverse voltage
650
204
600
255
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Capacitor (DC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 150
°C
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
V
tp = 1 min
V
>12,7
>12,7
≥ 600
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,006
600
25
3,25
1,15
4
4,75
V
V
25
1,24
1,7
1,8(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,75
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
150
600
µA
nA
Ω
20
None
34200
990
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
115,8
2520
VCC = 400 V
±15
600
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,19
K/W
25
478,53
540,72
474,65
92,33
94,24
95,2
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 8 Ω
Rgoff = 16 Ω
592,34
619,14
626,24
59,4
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
475
tf
125
150
25
54,48
51,64
9,91
ns
QrFWD=6,1 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
QrFWD=10,84 µC
QrFWD=13,24 µC
125
150
25
10,16
10,35
19,65
19,44
19,81
mWs
mWs
Eoff
125
150
Copyright Vincotech
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12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,53
1,48
1,46
1,92(1)
VF
IR
Forward voltage
375
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
19
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,3
K/W
25
107,47
147,5
166,49
86,78
108,36
118,17
6,1
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=3922 A/µs
di/dt=3987 A/µs
di/dt=3684 A/µs
Qr
Recovered charge
±15
350
475
125
150
25
10,84
13,24
1,29
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,34
mWs
A/µs
2,91
3339,33
4487,66
4481,07
(dirf/dt)max
125
150
Copyright Vincotech
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12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0045
450
25
4,35
5
5,65
V
V
25
1,52
1,7
1,65(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,75
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
120
600
µA
nA
Ω
20
None
26760
810
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
276
VCC = 520 V
15
450
2610
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,24
K/W
25
575,24
580,24
582,18
173,65
171,84
171,92
1026,85
1095,12
1114,91
123,94
101,33
96,85
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 5,82 Ω
Rgoff = 12,8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
475
tf
125
150
25
ns
QrFWD=4,52 µC
QrFWD=12,43 µC
QrFWD=14,87 µC
20,62
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
23,57
mWs
mWs
23,96
35,99
Eoff
125
150
35,41
35,94
Copyright Vincotech
6
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
1,53
1,49
1,46
1,92(1)
15,2
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,37
K/W
25
70,72
127,6
138,83
95,49
147,5
162,77
4,52
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=2550 A/µs
di/dt=2549 A/µs
di/dt=2605 A/µs
Qr
Recovered charge
±15
350
475
125
150
25
12,43
14,87
0,788
2,25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
2,72
1894,85
2463,13
1956,79
(dirf/dt)max
125
150
Copyright Vincotech
7
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Sw. Inv. Diode
Static
25
1,53
1,49
1,46
1,92(1)
15,2
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Vr = 650 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,37
K/W
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
33
nF
%
Tolerance
-5
5
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
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12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1500
1500
VGE
:
7 V
8 V
1250
1000
750
500
250
0
1250
1000
750
500
250
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
600
10
500
400
300
200
100
0
-1
10
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,19
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,23E-02
3,92E-02
7,54E-02
3,68E-02
6,28E-03
3,19E+00
5,61E-01
6,82E-02
1,46E-02
1,14E-03
Copyright Vincotech
9
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
10000
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
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12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Buck Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
1000
750
500
250
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,305
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,75E-02
7,11E-02
1,43E-01
5,15E-02
1,23E-02
3,96E+00
5,62E-01
5,86E-02
1,00E-02
8,47E-04
Copyright Vincotech
11
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Boost Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
1250
1250
VGE
:
7 V
8 V
9 V
1000
750
500
250
0
1000
750
500
250
0
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
0
1
2
3
4
5
V
CE(V)
VCE(V)
tp
VGE
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
400
10
-1
10
300
200
100
0
-2
10
-3
10
0,5
0,2
0,1
-4
0,05
0,02
0,01
0,005
0
10
-5
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
54
μs
V
D =
tp / T
0,236
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,49E-02
5,32E-02
6,22E-02
6,22E-02
1,35E-02
3,55E+00
6,58E-01
1,22E-01
3,02E-02
5,48E-03
Copyright Vincotech
12
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Boost Switch Characteristics
figure 12.
IGBT
figure 13.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
10000
1000
100
10
17,5
15,0
12,5
10,0
7,5
100µs
1ms
10ms
100ms
DC
1
5,0
0,1
2,5
0,01
0,0
1
10
100
1000
10000
0
500
1000
1500
2000
2500
3000
V
CE(V)
Qg(μC)
D =
IC
=
single pulse
75
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
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12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Boost Diode Characteristics
figure 14.
FWD
figure 15.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,372
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,80E-02
8,21E-02
1,26E-01
9,93E-02
1,63E-02
3,48E+00
5,95E-01
8,65E-02
1,93E-02
1,99E-03
Copyright Vincotech
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12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Boost Sw. Inv. Diode Characteristics
figure 16.
FWD
figure 17.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,372
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
4,80E-02
8,21E-02
1,26E-01
9,93E-02
1,63E-02
3,48E+00
5,95E-01
8,65E-02
1,93E-02
1,99E-03
Copyright Vincotech
15
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Thermistor Characteristics
figure 18.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
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12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Buck Switching Characteristics
figure 19.
IGBT
figure 20.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
35
30
25
20
15
10
5
25
20
15
10
5
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eon
0
0
0,0
0
100
200
300
400
500
600
700
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
Ω
125 °C
150 °C
350
±15
475
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
16
figure 21.
FWD
Typical reverse recovered energy loss as a function of collector current
Erec = f(IC)
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
0
100
200
300
400
500
600
700
IC(A)
With an inductive load at
25 °C
VCE
VGE
Rgon
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
Tj:
Copyright Vincotech
17
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Buck Switching Characteristics
figure 23.
IGBT
figure 24.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
td(on)
tr
tr
tf
-1
10
-1
10
-2
10
-2
10
0
100
200
300
400
500
600
700
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
8
°C
150
350
±15
475
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
V
V
A
VGE
Rgon
Rgoff
VGE
IC
16
figure 25.
FWD
figure 26.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
600
700
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
Ω
125 °C
150 °C
350
±15
475
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
18
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Buck Switching Characteristics
figure 27.
FWD
figure 28.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
5,0
5,0
Qr
2,5
2,5
0,0
0,0
0,0
0
100
200
300
400
500
600
700
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
125 °C
150 °C
350
±15
475
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
figure 29.
FWD
figure 30.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
200
175
150
125
100
75
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
50
25
0
0
0,0
0
100
200
300
400
500
600
700
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
125 °C
150 °C
350
±15
475
V
125 °C
150 °C
Tj:
Tj:
V
V
A
Ω
Copyright Vincotech
19
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Buck Switching Characteristics
figure 31.
FWD
figure 32.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
8000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
dirr/dt ──────
0
100
200
300
400
500
600
700
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
8
V
V
125 °C
150 °C
350
±15
475
V
V
A
125 °C
150 °C
Tj:
Tj:
Ω
figure 33.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1500
IC MAX
1250
1000
750
500
250
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
8
°C
Ω
Rgon
Rgoff
=
=
16
Ω
Copyright Vincotech
20
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Boost Switching Characteristics
figure 34.
IGBT
figure 35.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
100
80
60
40
20
0
80
70
60
50
40
30
20
10
0
Eon
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eon
Eon
0
200
400
600
800
1000
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
5,82
12,8
V
V
Ω
Ω
125 °C
150 °C
350
±15
475
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
figure 36.
FWD
Typical reverse recovered energy loss as a function of collector current
Erec = f(IC)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
0
200
400
600
800
1000
IC(A)
With an inductive load at
25 °C
VCE
VGE
Rgon
=
=
=
350
±15
5,82
V
V
Ω
125 °C
150 °C
Tj:
Copyright Vincotech
21
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Boost Switching Characteristics
figure 38.
IGBT
figure 39.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
1
10
1
10
td(on)
td(off)
td(on)
0
0
10
10
tr
tr
tf
-1
10
-1
10
-2
10
-2
10
0
200
400
600
800
1000
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
Rg(Ω)
IC(A)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
°C
V
150
350
±15
475
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
±15
5,82
12,8
V
Ω
Ω
figure 40.
FWD
figure 41.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
200
400
600
800
1000
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
5,82
V
V
Ω
125 °C
150 °C
350
±15
475
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
22
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Boost Switching Characteristics
figure 42.
FWD
figure 43.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
5,0
Qr
2,5
2,5
Qr
0,0
0,0
0,0
0
200
400
600
800
1000
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
5,82
V
V
Ω
125 °C
150 °C
350
±15
475
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 44.
FWD
figure 45.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
150
125
100
75
250
200
150
100
50
IRM
IRM
IRM
50
IRM
IRM
25
IRM
0
0
0,0
0
200
400
600
800
1000
2,5
5,0
7,5
10,0
12,5
15,0
17,5
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
5,82
V
V
Ω
125 °C
150 °C
350
±15
475
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
23
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Boost Switching Characteristics
figure 46.
FWD
figure 47.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4500
7000
6000
5000
4000
3000
2000
1000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
200
400
600
800
1000
IC(A)
0,0
2,5
5,0
7,5
10,0
12,5
15,0
17,5
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
5,82
V
V
Ω
125 °C
150 °C
350
±15
475
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 48.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
1000
IC MAX
800
600
400
200
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
5,82
12,8
°C
Ω
Rgon
Rgoff
=
=
Ω
Copyright Vincotech
24
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Switching Definitions
figure 49.
IGBT
figure 50.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 51.
IGBT
figure 52.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
25
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Switching Definitions
figure 53.
FWD
figure 54.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
26
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
30-PT07NIA600S501-PD60F58Y
30-PT07NIA600S501-PD60F58Y-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
2,7
0
Function
GND2
GND2
GND2
GND2
GND2
DC+
DC+
DC+
DC+
DC+
G11
32,9
32,9
30,2
27,5
24,8
16,4
13,7
11
2
3
0
4
0
5
0
6
0
7
0
8
0
9
8,3
0
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
5,6
0
20,8
23,8
32,9
30,2
27,5
24,8
22,1
19,4
16,7
14
12,2
12,2
36,9
36,9
36,9
36,9
36,9
36,9
36,9
36,9
33,9
36,9
33,9
36,9
36,9
36,9
36,9
36,9
36,9
36,9
25,35
25,35
0
S11
Ph2
Ph2
Ph2
Ph2
S13
Ph2
Ph2
Ph2
22,1
0
G13
Therm1
Therm2
Ph1
0
38
40,7
43,4
46,1
48,8
51,5
54,2
70,9
67,9
65,3
62,6
59,9
57,2
54,5
46,1
43,4
40,7
38
Ph1
Ph1
Ph1
Ph1
Ph1
Ph1
S12
G12
DC-
0
DC-
0
DC-
0
DC-
0
DC-
0
GND1
GND1
GND1
GND1
GND1
S14
0
0
0
38
2,7
20,75
23,75
48,25
48,25
G14
Copyright Vincotech
27
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Pinout
DC+
6,7,8,9,10
T11
D41
G11
11
S11
12
T13
C10
D11
D43
G13
21
S13
17
Ph2
GND2
1,2,3,4,5
13,14,15,16,18,19,20
Ph1
GND1
38,39,40,41,42
24,25,26,27,28,29,30
T14
C20
D12
D44
G14
44
S14
43
T12
D42
G12
32
Rt
S12
31
Therm1
22
Therm2
23
DC-
33,34,35,36,37
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
D11, D12
T13, T14
D42, D41
D43, D44
C10, C20
Rt
IGBT
FWD
650 V
650 V
650 V
650 V
650 V
630 V
600 A
375 A
474 A
300 A
300 A
Buck Switch
Buck Diode
IGBT
Boost Switch
FWD
Boost Diode
FWD
Boost Sw. Inv. Diode
Capacitor (DC)
Thermistor
Capacitor
Thermistor
Copyright Vincotech
28
12 Aug. 2022 / Revision 2
30-PT07NIA600S501-PD60F58Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-PT07NIA600S501-PD60F58Y-D1-14
30-PT07NIA600S501-PD60F58Y-D2-14
1 Jul. 2022
12 Aug. 2022
Boost Switch Rth corrected. Module unchanged.
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
29
12 Aug. 2022 / Revision 2
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