30-PT07NAA300S501-LF64F58Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;型号: | 30-PT07NAA300S501-LF64F58Y |
厂家: | VINCOTECH |
描述: | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
文件: | 总33页 (文件大小:8330K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
30-PT07NAA300S501-LF64F58Y
datasheet
flowANPC 2
650 V / 300 A
Topology features
flow 2 12 mm housing
● Advanced Neutral Point Clamped topology
● Integrated snubber capacitor
● Split output for improved switching performance
● Temperature sensor
Component features
● High speed and smooth switching
● Low gate charge
● Very low collector emitter saturation voltage
Housing features
● Base isolation: Al2O3
● Convex shaped baseplate for superior thermal contact
● Cu baseplate
Schematic
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
● Reliable cold welding connection
Target applications
● Power Supply
● UPS
Types
● 30-PT07NAA300S501-LF64F58Y
Copyright Vincotech
1
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
AC Switch
VCES
Collector-emitter voltage
650
214
900
296
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
AC Diode
VRRM
Peak repetitive reverse voltage
650
183
600
223
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Neutral Point Switch
VCES
Collector-emitter voltage
650
215
675
231
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
2
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
DC-Link Diode
VRRM
Peak repetitive reverse voltage
650
166
450
214
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Neutral Point Switch Prot. Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
650
25
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
40
A
Ptot
43
W
°C
Tjmax
Maximum junction temperature
175
DC-Link Switch
VCES
Collector-emitter voltage
650
215
675
231
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Copyright Vincotech
3
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Neutral Point Diode
VRRM
Peak repetitive reverse voltage
650
166
450
214
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
DC-Link Switch Prot. Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
650
25
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
40
A
Ptot
43
W
°C
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 125
°C
AC Switch Prot. Diode
VRRM
Peak repetitive reverse voltage
650
25
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
40
A
Ptot
43
W
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
>12,7
>12,7
≥ 600
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,003
300
25
3,2
4
4,8
V
V
25
1,43
1,52
1,55
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
400
µA
nA
Ω
20
None
18000
520
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
68
VCC = 520 V
15
300
656
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,32
K/W
25
46
49
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
48
24
tr
125
150
25
25
26
Rgon = 2 Ω
Rgoff = 2 Ω
196
218
223
13,76
23,79
27,07
3,6
td(off)
Turn-off delay time
Fall time
125
150
25
ns
0/15
350
300
tf
125
150
25
ns
QrFWD=7,4 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
QrFWD=14,02 µC
QrFWD=16,46 µC
125
150
25
4,09
4,11
3,03
5,4
mWs
mWs
Eoff
125
150
5,74
Copyright Vincotech
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28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
AC Diode
Static
25
1,53
1,49
1,46
1,92(1)
15,2
VF
IR
Forward voltage
300
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,43
K/W
25
159,65
209,87
225,99
108,11
142,58
159,45
7,4
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=10985 A/µs
Qr
Recovered charge
di/dt=10127 A/µs 0/15
di/dt=9792 A/µs
350
300
125
150
25
14,02
16,46
1,93
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
3,97
mWs
A/µs
4,69
6854
(dirf/dt)max
125
150
2870
3068
Copyright Vincotech
7
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,003
225
25
4,2
5
5,8
V
V
25
1,1
1,45(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,09
1,08
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
120
300
µA
nA
Ω
20
None
34875
90
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
520
225
1308
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,41
K/W
DC-Link Diode
Static
25
1,53
1,49
1,46
1,92(1)
11,4
VF
IR
Forward voltage
225
125
150
V
Reverse leakage current
Vr = 650 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,44
K/W
Copyright Vincotech
8
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Switch Prot. Diode
Static
25
1,23
1,74
1,65
1,61
1,87(1)
0,24
VF
IR
Forward voltage
20
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,21
K/W
DC-Link Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,003
225
25
4,2
5
5,8
V
V
25
1,1
1,45(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,09
1,08
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
120
300
µA
nA
Ω
20
None
34875
90
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
15
520
225
1308
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,41
K/W
Copyright Vincotech
9
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Neutral Point Diode
Static
25
1,53
1,49
1,46
1,92(1)
11,4
VF
IR
Forward voltage
225
125
150
V
Reverse leakage current
Vr = 650 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
0,44
K/W
DC-Link Switch Prot. Diode
Static
25
1,23
1,74
1,65
1,61
1,87(1)
0,24
VF
IR
Forward voltage
20
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,21
K/W
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
25
10
nF
%
%
Tolerance
-5
5
Dissipation factor
f = 1 kHz
0,1
Copyright Vincotech
10
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
AC Switch Prot. Diode
Static
25
1,23
1,74
1,65
1,61
1,87(1)
0,24
VF
IR
Forward voltage
20
125
150
V
Reverse leakage current
Vr = 650 V
25
µA
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
2,21
K/W
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
11
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
AC Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
800
800
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
600
400
200
0
600
400
200
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
300
10
250
200
150
100
50
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,321
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
6,32E-02
6,12E-02
9,23E-02
8,40E-02
1,35E-02
6,54E-03
2,19E+00
3,83E-01
8,00E-02
2,29E-02
2,47E-03
4,38E-04
Copyright Vincotech
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28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
AC Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
AC Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,426
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
3,16E-02
6,09E-02
1,04E-01
1,65E-01
3,48E-02
1,39E-02
1,60E-02
5,87E+00
1,16E+00
1,83E-01
4,07E-02
8,38E-03
1,32E-03
2,81E-04
Copyright Vincotech
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28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Neutral Point Switch Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
700
700
VGE
:
7 V
8 V
600
500
400
300
200
100
0
600
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
175
10
150
125
100
75
-1
10
-2
10
0,5
50
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,412
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,53E-02
6,68E-02
1,07E-01
1,53E-01
2,93E-02
1,11E-02
4,06E+00
9,20E-01
1,59E-01
3,65E-02
7,79E-03
8,69E-04
Copyright Vincotech
15
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Neutral Point Switch Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
16
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
DC-Link Diode Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,443
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,77E-02
5,61E-02
8,82E-02
1,88E-01
5,56E-02
1,65E-02
1,04E-02
7,35E+00
1,27E+00
2,03E-01
4,07E-02
1,11E-02
2,47E-03
5,17E-04
Copyright Vincotech
17
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Neutral Point Switch Prot. Diode Characteristics
figure 15.
FWD
figure 16.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,209
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,86E-02
2,06E-01
1,06E+00
4,76E-01
1,85E-01
1,98E-01
2,28E+00
2,30E-01
3,33E-02
1,15E-02
2,22E-03
3,49E-04
Copyright Vincotech
18
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
DC-Link Switch Characteristics
figure 17.
IGBT
figure 18.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
700
700
VGE
:
7 V
8 V
600
500
400
300
200
100
0
600
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 19.
IGBT
figure 20.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
175
10
150
125
100
75
-1
10
-2
10
0,5
50
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,412
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,53E-02
6,68E-02
1,07E-01
1,53E-01
2,93E-02
1,11E-02
4,06E+00
9,20E-01
1,59E-01
3,65E-02
7,79E-03
8,69E-04
Copyright Vincotech
19
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
DC-Link Switch Characteristics
figure 21.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
1
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
20
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Neutral Point Diode Characteristics
figure 22.
FWD
figure 23.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
600
500
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,443
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,77E-02
5,61E-02
8,82E-02
1,88E-01
5,56E-02
1,65E-02
1,04E-02
7,35E+00
1,27E+00
2,03E-01
4,07E-02
1,11E-02
2,47E-03
5,17E-04
Copyright Vincotech
21
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
DC-Link Switch Prot. Diode Characteristics
figure 24.
FWD
figure 25.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,209
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,86E-02
2,06E-01
1,06E+00
4,76E-01
1,85E-01
1,98E-01
2,28E+00
2,30E-01
3,33E-02
1,15E-02
2,22E-03
3,49E-04
Copyright Vincotech
22
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Thermistor Characteristics
figure 26.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
23
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
AC Switch Prot. Diode Characteristics
figure 27.
FWD
figure 28.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
60
50
40
30
20
10
0
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
3,0
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,209
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
8,86E-02
2,06E-01
1,06E+00
4,76E-01
1,85E-01
1,98E-01
2,28E+00
2,30E-01
3,33E-02
1,15E-02
2,22E-03
3,49E-04
Copyright Vincotech
24
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
AC Switching Characteristics
figure 29.
IGBT
figure 30.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
12,5
10,0
7,5
10
Eon
Eon
Eon
Eoff
Eoff
8
Eoff
Eoff
6
Eon
Eon
Eon
Eoff
Eoff
5,0
4
2,5
2
0,0
0
0
100
200
300
400
500
600
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
V
Ω
Ω
125 °C
150 °C
350
0/15
300
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 31.
FWD
figure 32.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
7
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
V
Ω
125 °C
150 °C
350
0/15
300
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
25
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
AC Switching Characteristics
figure 33.
IGBT
figure 34.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
td(on)
tr
tf
-1
10
td(on)
-2
10
tr
tf
-3
10
-2
10
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
0/15
2
°C
V
150
350
0/15
300
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 35.
FWD
figure 36.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,225
0,200
0,175
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
V
Ω
125 °C
150 °C
350
0/15
300
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
26
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
AC Switching Characteristics
figure 37.
FWD
figure 38.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
30
25
20
15
10
5
20,0
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
Qr
5,0
2,5
0
0,0
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
V
Ω
125 °C
150 °C
350
0/15
300
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 39.
FWD
figure 40.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
300
250
200
150
100
50
300
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
100
200
300
400
500
600
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
V
Ω
125 °C
150 °C
350
0/15
300
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
27
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
AC Switching Characteristics
figure 41.
FWD
figure 42.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
15000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
100
200
300
400
500
600
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
0/15
2
V
V
Ω
125 °C
150 °C
350
0/15
300
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 43.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
700
IC MAX
600
500
400
300
200
100
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
Copyright Vincotech
28
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Switching Definitions
figure 44.
IGBT
figure 45.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 46.
IGBT
figure 47.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
29
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Switching Definitions
figure 48.
FWD
figure 49.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
30
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
30-PT07NAA300S501-LF64F58Y
30-PT07NAA300S501-LF64F58Y-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
0
Y
36
Function
DC+2
DC+2
DC+2
DC+2
GND2
GND2
GND2
S16
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
67,5
70
36
36
DC+1
DC+1
S11
G11
G13
S13
Ph1
2
2,5
5
36
70
30,5
27,5
3,5
0,5
0
3
36
69
4
7,5
13
36
55,5
54,5
45,5
43
5
36
6
15,5
19,2
0
36
7
36
0
Ph1
8
23,7
20,7
36
40,5
38
0
Ph1
9
1
G16
0
Ph1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
24,5
27
DC-2
DC-2
DC-2
DC-2
S12
32
0
Ph2
36
29,5
27
0
Ph2
29,5
32
36
0
Ph2
36
24,5
0
0
Ph2
32
28,5
25,5
36
0
Therm1
Therm2
P2
31
G12
1
3
38
DC-1
DC-1
DC-1
DC-1
GND1
GND1
GND1
DC+1
DC+1
11,7
19,7
32
11
38
33
18,6
12,8
15,8
15,9
12,2
27,5
30,5
N2
40,5
40,5
46
36
G14
S14
N1
33
32
36
43,5
54,7
56,9
57,9
52,5
57
36
P1
36
G15
S15
62,5
65
36
36
Copyright Vincotech
31
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Pinout
23,24,25,26
DC+1
1,2,3,4
DC+2
T11
D41
D11
28
G11
S11
27
41
P2
P1
46
T16
9
T13
D46
D16
D14
D43
29
30
G16
S16
G13
S13
C20
8
31,32,33,34
35,36,37,38
Ph1
Ph2
5,6,7
GND2
GND1
C10
20,21,22
T14
43
T15
47
D44
D45
D15
D13
G14
S14
G15
S15
44
48
42
N2
N1
45
T12
15
D42
D12
G12
S12
Rt
14
39
Therm1
40
Therm2
DC-1
16,17,18,19
DC-2
10,11,12,13
Identification
Component
Voltage
Current
Function
Comment
ID
D43, D44
T13, T14
D13, D14
T15, T16
D11, D12
D45, D46
T11, T12
D15, D16
D41, D42
C10, C20
Rt
FWD
IGBT
FWD
650 V
650 V
650 V
650 V
650 V
650 V
650 V
650 V
650 V
630 V
20 A
300 A
300 A
225 A
225 A
20 A
AC Switch Prot. Diode
AC Switch
AC Diode
IGBT
FWD
Neutral Point Switch
DC-Link Diode
FWD
Neutral Point Switch Prot. Diode
DC-Link Switch
IGBT
FWD
225 A
225 A
20 A
Neutral Point Diode
DC-Link Switch Prot. Diode
Capacitor (DC)
FWD
Capacitor
NTC
Thermistor
Copyright Vincotech
32
28 Apr. 2022 / Revision 3
30-PT07NAA300S501-LF64F58Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
30-PT07NAA300S501-LF64F58Y-D3-14
28 Apr. 2022
New Datasheet format, module is unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
33
28 Apr. 2022 / Revision 3
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