30-PT07NIB300S503-LH36F58Y [VINCOTECH]
High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage;
| 型号： | 30-PT07NIB300S503-LH36F58Y |
| 厂家： | 
VINCOTECH |
| 描述： | High speed and smooth switching;Low gate charge;Very low collector emitter saturation voltage |
| 文件： | 总32页 (文件大小：9049K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
30-PT07NIB300S503-LH36F58Y
datasheet
flowNPC 2
650 V / 300 A
Topology features
flow 2 13 mm housing
● Capacitor
● Kelvin Emitter for improved switching performance
● Neutral Point Clamped Topology (I-Type)
● Temperature sensor
Component features
● High speed and smooth switching
● Low gate charge
● Very low collector emitter saturation voltage
Housing features
● Base isolation: Al2O3
● Convex shaped baseplate for superior thermal contact
● Cu baseplate
● Thermo-mechanical push-and-pull force relief
● Press-fit pin
Schematic
● Reliable cold welding connection
Target applications
● Energy Storage Systems
● Industrial Drives
● Solar Inverters
● UPS
Types
● 30-PT07NIB300S503-LH36F58Y
Copyright Vincotech
1
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Buck Switch
VCES
Collector-emitter voltage
650
260
900
389
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Buck Diode
VRRM
Peak repetitive reverse voltage
650
208
257
175
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
W
°C
Tjmax
Maximum junction temperature
Buck Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
1200
13
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
36
A
Single Half Sine Wave,
tp = 10 ms
6
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
35
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Boost Switch
VCES
Collector-emitter voltage
650
256
900
288
±20
175
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
Tjmax
Maximum junction temperature
°C
Boost Diode
VRRM
Peak repetitive reverse voltage
1300
182
461
175
V
A
IF
Forward current (DC current)
Total power dissipation
Tj = Tjmax
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Ptot
W
°C
Tjmax
Maximum junction temperature
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
1200
13
V
A
IF
IFSM
I2t
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
36
A
Single Half Sine Wave,
tp = 10 ms
6
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
35
Tjmax
Maximum junction temperature
175
Capacitor (DC)
VMAX
Maximum DC voltage
630
V
Top
Operation Temperature
-55 ... 150
°C
Copyright Vincotech
3
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
tp = 2 s
6000
2500
V
AC Voltage
tp = 1 min
V
>12,7
>12,7
≥ 200
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
4
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,003
300
25
3,2
4
4,8
V
V
25
1,43
1,52
1,55
1,75(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
200
400
µA
nA
Ω
20
None
18000
520
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
68
VCC = 520 V
15
300
656
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,24
K/W
Rth(j-s)
25
40,47
41,02
40,95
17,43
18,97
19,8
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
132,96
157,81
165,3
21,93
28,2
td(off)
Turn-off delay time
Fall time
125
150
25
ns
-5/15
350
180
tf
125
150
25
ns
31,09
1,21
QrFWD=3,1 µC
QrFWD=9,95 µC
QrFWD=12,49 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
1,83
mWs
mWs
1,94
2,22
Eoff
125
150
3,52
3,88
Copyright Vincotech
5
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Buck Diode
Static
25
1,73
1,45
1,41
2,5(1)
VF
IR
Forward voltage
280
125
150
V
Reverse leakage current
Thermal
Vr = 650 V
25
60
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,37
K/W
Rth(j-s)
25
136,13
229,49
257,63
40,8
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
72,91
81,66
3,1
ns
di/dt=7986 A/µs
di/dt=7611 A/µs
di/dt=8106 A/µs
Qr
Recovered charge
-5/15
350
180
125
150
25
9,95
μC
12,49
0,612
2,11
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
2,68
8271,93
6648,6
6899,06
(dirf/dt)max
125
150
Copyright Vincotech
6
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Buck Sw. Protection Diode
Static
25
2,37
2,27
2,65(1)
2,68(1)
0,06
VF
IR
Forward voltage
8
V
150
25
Reverse leakage current
Thermal
Vr = 1200 V
mA
150
0,3
0,7
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
2,68
K/W
Rth(j-s)
Copyright Vincotech
7
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,003
225
25
4,2
5
5,8
V
V
25
1,1
1,45(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
1,09
1,08
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
120
360
µA
nA
Ω
20
None
36300
450
Cies
Coes
Cres
Qg
pF
pF
pF
nC
Output capacitance
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
126
15
520
225
1308
Thermal
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,33
K/W
Rth(j-s)
25
145,02
146,44
147,1
16,66
17,98
18,36
215,32
255,29
263,64
33,82
117,38
170,18
0,733
0,921
1
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
350
180
tf
125
150
25
ns
QrFWD=2,58 µC
QrFWD=8,04 µC
QrFWD=10,16 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
8,63
Eoff
125
150
12,4
13,3
Copyright Vincotech
8
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Boost Diode
Static
25
4
5(1)
VF
IR
Forward voltage
280
125
150
3,33
3,17
V
Reverse leakage current
Thermal
Vr = 1300 V
25
60
µA
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
Dynamic
0,21
K/W
Rth(j-s)
25
139,89
221,28
246,01
32,28
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
67,84
ns
78,27
2,58
di/dt=9038 A/µs
di/dt=8691 A/µs
di/dt=8303 A/µs
Qr
Recovered charge
±15
350
180
125
150
25
8,04
μC
10,16
0,398
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
1,63
mWs
A/µs
2,09
13929,49
9977,38
9746,69
(dirf/dt)max
125
150
Copyright Vincotech
9
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Boost Sw. Protection Diode
Static
25
2,37
2,27
2,65(1)
2,68(1)
0,06
VF
IR
Forward voltage
8
V
150
25
Reverse leakage current
Thermal
Vr = 1200 V
mA
150
0,3
0,7
λpaste = 3,4 W/mK
(PSX)
Thermal resistance junction to sink(2)
2,68
K/W
Rth(j-s)
Capacitor (DC)
Static
DC bias voltage =
0 V
C
Capacitance
25
33
nF
%
Tolerance
-5
5
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
22
kΩ
%
R100 = 1484 Ω
100
25
-5
5
130
1,5
mW
mW/K
K
d
25
B(25/50)
Tol. ±1 %
Tol. ±1 %
3962
4000
B(25/100)
B-value
K
Vincotech Thermistor Reference
I
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
10
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
800
800
VGE
:
7 V
8 V
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
600
400
200
0
600
400
200
0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
0,0
0,5
1,0
1,5
2,0
2,5
3,0
V
CE(V)
VCE(V)
tp
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
=
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
300
10
250
200
150
100
50
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,244
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,19E-02
3,56E-02
5,47E-02
9,39E-02
2,10E-02
7,41E-03
4,04E+00
8,39E-01
1,56E-01
3,22E-02
7,54E-03
1,20E-03
Copyright Vincotech
11
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
100
200
300
400
500
600
700
V
CE(V)
Qg(nC)
D =
IC
=
single pulse
75
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
12
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Buck Diode Characteristics
figure 7.
FWD
figure 8.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,0
0,5
1,0
1,5
2,0
2,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,37
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
1,90E-02
8,58E-02
1,71E-01
6,65E-02
2,75E-02
9,17E+00
1,35E+00
1,16E-01
1,86E-02
1,64E-03
Copyright Vincotech
13
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Buck Sw. Protection Diode Characteristics
figure 9.
FWD
figure 10.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,683
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
1,24E-01
9,92E-01
8,59E-01
5,29E-01
1,79E-01
1,82E+00
7,02E-02
1,48E-02
1,78E-03
4,06E-04
Copyright Vincotech
14
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Boost Switch Characteristics
figure 11.
IGBT
figure 12.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
700
700
VGE
:
7 V
8 V
600
500
400
300
200
100
0
600
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
0,00
0,25
0,50
0,75
1,00
1,25
1,50
1,75
2,00
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 13.
IGBT
figure 14.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
175
10
150
125
100
75
-1
10
-2
10
0,5
50
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
1
2
3
4
5
6
7
8
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,329
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,80E-02
4,42E-02
8,02E-02
1,26E-01
2,79E-02
1,28E-02
5,19E+00
1,12E+00
1,82E-01
3,39E-02
6,91E-03
7,70E-04
Copyright Vincotech
15
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Boost Switch Characteristics
figure 15.
IGBT
figure 16.
IGBT
Safe operating area
Gate voltage vs gate charge
IC = f(VCE
)
VGE = f(Qg)
1000
17,5
15,0
12,5
10,0
7,5
100
10
1
5,0
0,1
0,01
2,5
0,0
1
10
100
1000
10000
0
250
500
750
1000
1250
1500
V
CE(V)
Qg(nC)
D =
IC
=
single pulse
75
25
A
Ts =
Tj =
80
15
°C
V
°C
VGE
=
Tj =
Tjmax
Copyright Vincotech
16
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Boost Diode Characteristics
figure 17.
FWD
figure 18.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
800
600
400
200
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,206
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
2,74E-02
4,37E-02
9,32E-02
2,79E-02
1,41E-02
5,35E+00
1,14E+00
1,04E-01
1,70E-02
1,69E-03
Copyright Vincotech
17
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Boost Sw. Protection Diode Characteristics
figure 19.
FWD
figure 20.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
1
20
15
10
5
10
0
10
-1
10
0,5
0,2
0,1
-2
10
0,05
0,02
0,01
0,005
0
-3
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
2,683
25 °C
Tj:
150 °C
Rth(j-s) =
K/W
FWD thermal model values
R (K/W)
τ (s)
1,24E-01
9,92E-01
8,59E-01
5,29E-01
1,79E-01
1,82E+00
7,02E-02
1,48E-02
1,78E-03
4,06E-04
Copyright Vincotech
18
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Thermistor Characteristics
figure 21.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
25000
20000
15000
10000
5000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
19
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Buck Switching Characteristics
figure 22.
IGBT
figure 23.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
8
7
6
5
4
3
2
1
0
5
4
3
2
1
0
Eon
Eoff
Eoff
Eon
Eoff
Eoff
Eoff
Eon
Eoff
Eon
Eon
Eon
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
Ω
125 °C
150 °C
350
-5/15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 24.
FWD
figure 25.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
20
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Buck Switching Characteristics
figure 26.
IGBT
figure 27.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
-1
10
td(on)
td(on)
tr
-1
10
tf
-2
10
tr
tf
-3
10
-2
10
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
-5/15
2
°C
150
350
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
VGE
Rgon
Rgoff
VGE
IC
-5/15
180
V
A
2
figure 28.
FWD
figure 29.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,150
0,125
0,100
0,075
0,050
0,025
0,000
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
21
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Buck Switching Characteristics
figure 30.
FWD
figure 31.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
5,0
Qr
Qr
2,5
2,5
0,0
0,0
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
125 °C
150 °C
350
-5/15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 32.
FWD
figure 33.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
300
250
200
150
100
50
350
300
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
125 °C
150 °C
350
-5/15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
22
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Buck Switching Characteristics
figure 34.
FWD
figure 35.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
15000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
12500
10000
7500
5000
2500
0
0
50
100
150
200
250
300
350
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
-5/15
2
V
V
Ω
125 °C
150 °C
350
-5/15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 36.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
700
IC MAX
600
500
400
300
200
100
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
Copyright Vincotech
23
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Boost Switching Characteristics
figure 37.
IGBT
figure 38.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
22,5
20,0
17,5
15,0
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Eoff
Eoff
Eoff
Eoff
Eoff
Eoff
5,0
Eon
Eon
Eon
5,0
2,5
2,5
Eon
Eon
0,0
Eon
0,0
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
125 °C
150 °C
350
±15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Rgon
Rgoff
Ω
Ω
2
figure 39.
FWD
figure 40.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
3,0
2,5
2,0
1,5
1,0
0,5
0,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
24
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Boost Switching Characteristics
figure 41.
IGBT
figure 42.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(on)
td(off)
tf
td(off)
td(on)
-1
10
tf
tr
-1
10
-2
10
tr
-3
10
-2
10
0
50
100
150
200
250
300
350
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
350
±15
2
°C
150
350
±15
180
°C
V
VCE
=
=
=
=
VCE
=
=
=
V
V
Ω
Ω
VGE
Rgon
Rgoff
VGE
IC
V
A
2
figure 43.
FWD
figure 44.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,12
0,10
0,08
0,06
0,04
0,02
0,00
0,150
0,125
0,100
0,075
0,050
0,025
0,000
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
125 °C
150 °C
350
±15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
25
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Boost Switching Characteristics
figure 45.
FWD
figure 46.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
15,0
12,5
10,0
7,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
5,0
5,0
Qr
2,5
2,5
Qr
0,0
0,0
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
125 °C
150 °C
350
±15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
figure 47.
FWD
figure 48.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
300
250
200
150
100
50
300
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
IRM
0
0
0
50
100
150
200
250
300
350
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
125 °C
150 °C
350
±15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
V
Ω
Copyright Vincotech
26
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Boost Switching Characteristics
figure 49.
FWD
figure 50.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
30000
20000
17500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
25000
20000
15000
10000
5000
0
0
50
100
150
200
250
300
350
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
350
±15
2
V
V
Ω
125 °C
150 °C
350
±15
180
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 51.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
500
IC MAX
400
300
200
100
0
0
100
200
300
400
500
600
700
800
V
CE(V)
Tj =
At
150
2
°C
Ω
Rgon
Rgoff
=
=
2
Ω
Copyright Vincotech
27
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Switching Definitions
figure 52.
IGBT
figure 53.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 54.
IGBT
figure 55.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
28
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Switching Definitions
figure 56.
FWD
figure 57.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
29
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
30-PT07NIB300S503-LH36F58Y
30-PT07NIB300S503-LH36F58Y-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
Date code
UL & VIN
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
6
3
0
3
0
0
0
0
0
0
3
0
3
0
3
0
3
0
3
0
3
0
0
0
0
0
3
0
3
Function
DC+2
DC+2
DC+2
DC+2
DC+2
DC+2
GND2
GND2
GND2
GND2
DC-2
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
51
52
53
54
55
56
57
58
2,75
0,25
0,25
20,1
32,5
29,5
20,2
17,2
0
DC+1
70,25
70,25
70,25
67,75
67,75
65,25
58
3
DC+1
DC+1
TM12
S12
2
0
3
13,75
23,55
23,55
23,95
25,55
4
5
G12
6
S14
7
G14
8
55,5
not assembled
9
53
2,25
4,75
36
36
36
36
36
36
36
36
36
36
36
36
Ph1
Ph1
Ph1
Ph1
Ph1
Ph1
Ph2
Ph2
Ph2
Ph2
Ph2
Ph2
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
50,5
43,25
43,25
40,75
40,75
38,25
38,25
32,25
32,25
29,75
29,75
27,25
27,25
20
7,25
DC-2
9,75
DC-2
12,25
14,75
38,25
40,75
43,25
45,75
48,25
50,75
64,45
70,85
45,95
48,95
DC-2
DC-2
DC-2
DC-1
DC-1
DC-1
DC-1
DC-1
36,6
36,55
24,05
24,05
Therm1
Therm2
S13
DC-1
GND1
GND1
GND1
GND1
DC+1
DC+1
DC+1
17,5
G13
15
not assembled
12,5
59,05
59,45
62,45
16,8
22
TM11
5,25
S11
G11
5,25
22
2,75
Copyright Vincotech
30
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Pinout
S1
S2
DC+2
1-6
DC+1
27-32
D14-1
D14-2
T11
D41
G11
58
C10
C30
S11
57
TM11
Ph1
56
39-44
T13
D11
T14
D43
GND1
23-26
D44
G13
S13
G14
S14
D12
54
53
37
GND2
7-10
C40
36
TM12
33
Ph2
45-50
C20
D13-1
D13-2
T12
D42
G12
S12
35
34
Rt
11-16
51
Therm1
52
17-22
DC-1
DC-2
Therm2
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12
D11, D12
D41, D42
T13, T14
IGBT
FWD
650 V
650 V
300 A
280 A
8 A
Buck Switch
Buck Diode
FWD
1200 V
650 V
Buck Sw. Protection Diode
Boost Switch
IGBT
225 A
280 A
8 A
D13, D14
D43, D44
C10, C20, C30, C40
Rt
FWD
1300 V
1200 V
630 V
Boost Diode
FWD
Boost Sw. Protection Diode
Capacitor (DC)
Capacitor
Thermistor
Thermistor
Copyright Vincotech
31
02 Mar. 2023 / Revision 4
30-PT07NIB300S503-LH36F58Y
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 36
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 2 packages see vincotech.com website.
Package data
Package data for flow 2 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
New Datasheet format
Separate datasheet
Isolation voltage update
Diode change
30-PT07NIB300S503-LH36F58Y-D4-14
2 Mar. 2023
TM14, TM15 pins removal
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
32
02 Mar. 2023 / Revision 4
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