70-W612NMA1K8M702-LC09FP7 [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC;
| 型号： | 70-W612NMA1K8M702-LC09FP7 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;Switching optimized for EMC |
| 文件： | 总27页 (文件大小：1572K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
70-W612NMA1K8M702-LC09FP70
datasheet
VINcoMNPC X12
1200 V / 1800 A
Features
VINco X12 housing
● IGBT M7 technology
● Low VCEsat and improved EMC behavior
● Low inductive package
● High efficiency
● Integrated snubber capacitors
Schematic
Target applications
● Solar Inverters
Types
● 70-W612NMA1K8M702-LC09FP70
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Switch
VCES
IC
ICRM
Ptot
VGES
Tjmax
Collector-emitter voltage
1200
1454
3600
2500
±20
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
W
V
Maximum junction temperature
175
°C
Copyright Vincotech
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09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Buck Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
650
1078
3600
1417
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Buck Sw. Protection Diode
VRRM
IF
Ptot
Tjmax
Peak repetitive reverse voltage
1200
90
V
A
Continuous (direct) forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
271
175
W
°C
Maximum junction temperature
Boost Switch
Collector-emitter voltage
≤ 50%
> 50%
650
500
VCES
IC
ICRM
Ptot
VGES
Tjmax
Relative moisture level
Tj = Tjmax
V
A
Collector current
Ts = 80 °C
1408
3600
1865
±20
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
A
Ts = 80 °C
W
V
Maximum junction temperature
175
°C
Boost Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
1200
1051
3600
1557
175
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Copyright Vincotech
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09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Boost Sw. Protection Diode
VRRM
Peak repetitive reverse voltage
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
650
91
V
A
IF
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
Ptot
240
127
175
A
Tj = Tjmax
W
°C
Tjmax
Maximum junction temperature
Capacitor (DC)
VMAX
Top
Maximum DC voltage
630
V
Operation Temperature
-40…+105
°C
Module Properties
Thermal Properties
Tstg
Storage temperature
-40…+125
°C
Tjop
Operation temperature under switching condition
Maximum allowed PCB temperature
Isolation Properties
-40…(Tjmax - 25)
°C
°C
TPCB
125
DC Test Voltage*
AC Voltage
tp = 2 s
4000
2500
V
Isolation voltage
Visol
tp = 1 min
V
Creepage distance
11,94
11,94
> 200
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
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70-W612NMA1K8M702-LC09FP70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Switch
Static
Gate-emitter threshold voltage
VGE(th)
VGE = VCE
0,18
25
5,4
6
6,6
V
V
25
125
150
1,57
1,80
1,86
2,05
VCEsat
Collector-emitter saturation voltage
15
1800
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
0
1200
0
25
25
1920
6000
µA
nA
Ω
20
0,25
Cies
Input capacitance
Output capacitance
360000
Coes
0
10
25
25
10560
pF
nC
Cres
Qg
Reverse transfer capacitance
Gate charge
3840
15
600
1800
12000
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,038
K/W
25
359
353
348
79
Turn-on delay time
td(on)
125
150
25
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
74
76
281
314
327
68
Rgon = 0,25 Ω
Rgoff = 0,25 Ω
ns
Turn-off delay time
Fall time
td(off)
-8 / 16
350
1200
tf
83
89
51,07
67,02
66,08
55,22
73,63
Qr
FWD
Qr
FWD
Qr
FWD
= 105,8 μC
= 219,8 μC
= 248,7 μC
Turn-on energy (per pulse)
Eon
mWs
125
Eoff
Turn-off energy (per pulse)
150
76,02
Copyright Vincotech
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09 Apr. 2019 / Revision 2
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Buck Diode
Static
25
1800
1,62
1,63
1,85
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
25
150
650
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,067
K/W
Dynamic
25
724
939
966
IRRM
125
150
25
Peak recovery current
A
397
trr
Qr
Reverse recovery time
125
150
25
125
150
25
125
150
25
125
150
643
738
ns
di/dt = 16335 A/μs
105,80
219,82
248,67
25,97
58,20
64,59
10017
8141
8083
di/dt = 16268 A/μs -8 / 16
di/dt = 16042 A/μs
350
1200
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Buck Sw. Protection Diode
Static
VF
IR
Forward voltage
Reverse leakage current
Thermal
90
25
2,37
2,71
V
25
150
360
10800
1200
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,350
K/W
Copyright Vincotech
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70-W612NMA1K8M702-LC09FP70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Switch
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,18
25
5,4
6
6,6
1,8
V
V
25
1,37
1,44
1,45
Collector-emitter saturation voltage
VCEsat
15
1800
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
650
0
25
25
2880
6000
µA
nA
Ω
20
0,33
228000
9840
Cies
Coes
Cres
Qg
Output capacitance
#VALUE!
0
10
25
25
pF
Reverse transfer capacitance
Gate charge
4200
15
300
1800
8760
nC
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,051
K/W
Dynamic
25
218
220
220
49
Turn-on delay time
td(on)
125
150
25
Rise time
tr
125
150
25
125
150
25
125
150
25
125
150
25
48
49
Rgon = 0,25 Ω
Rgoff = 0,25 Ω
ns
248
290
298
75
103
109
20
26
29
38
Turn-off delay time
Fall time
td(off)
-8 / 16
350
800
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 98,7 μC
= 161,5 μC
= 196,4 μC
Turn-on energy (per pulse)
Eon
mWs
125
51
Eoff
Turn-off energy (per pulse)
150
53
Copyright Vincotech
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09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Boost Diode
Static
25
1800
1,80
1,90
2,15
VF
IR
Forward voltage
Reverse leakage current
Thermal
V
125
25
1200
150
µA
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,061
K/W
Dynamic
25
940
1112
1188
255
IRRM
125
150
25
Peak recovery current
A
trr
Qr
Reverse recovery time
125
150
25
125
150
25
385
449
99
161
196
26
ns
di/dt = 18140 A/μs
di/dt = 16879 A/μs -8 / 16
di/dt = 16744 A/μs
350
800
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
125
150
44
53
16727
14031
13253
mWs
A/µs
(dirf/dt)max
Boost Sw. Protection Diode
Static
25
1,74
1,66
1,61
1,87
1,44
VF
IR
125
150
25
Forward voltage
120
V
Reverse leakage current
650
µA
150
Thermal
λpaste = 3,4 W/mK
(PSX)
Rth(j-s)
Thermal resistance junction to sink
0,749
K/W
Copyright Vincotech
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09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Capacitor (DC)
C
Capacitance
4080
nF
%
%
Tolerance
-10
+10
0,04
Dissipation factor
Climatic category
f = 1 kHz
20
40/105/56
22
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
kΩ
%
Deviation of R100
Power dissipation
Power dissipation constant
B-value
R100 = 1484 Ω
-5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
B-value
K
Vincotech NTC Reference
I
Copyright Vincotech
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09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Buck Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
VGE
=
Tj:
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
10-1
I
I
I
I
Z
Z
Z
Z
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,038
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
5,60E-03
9,64E-03
8,03E-03
1,06E-02
1,75E-03
1,31E-03
1,08E-03
6,56E-01
1,54E-01
3,48E-02
6,87E-03
1,56E-03
1,53E-04
4,78E-05
Copyright Vincotech
9
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Buck Switch Characteristics
figure 5.
IGBT
figure 6.
IGBT
Gate voltage vs gate charge
Safe operating area
VGE = f(Q G
)
I C = f(VCE)
I
I
I
I
V
V
V
V
1800
D =
single pulse
80
I C=
A
Ts
=
ºC
V
VGE
=
±15
Tj =
Tjmax
Copyright Vincotech
10
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Buck Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-3
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,067
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
4,72E-03
9,38E-03
1,36E-02
2,45E-02
8,70E-03
3,44E-03
2,66E-03
8,31E-01
1,39E-01
2,92E-02
7,11E-03
2,38E-03
3,38E-04
9,17E-05
Copyright Vincotech
11
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Buck Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
D =
R th(j-s)
tp / T
0,350
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
1,65E-02
3,35E-02
8,98E-02
1,07E-01
6,29E-02
2,24E-02
1,78E-02
4,88E-01
5,92E-02
9,33E-03
3,01E-03
5,15E-04
1,38E-04
9,12E-05
Copyright Vincotech
12
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Boost Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
μs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
μs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
10-1
I
I
I
I
Z
Z
Z
Z
10-2
10-3
10-4
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
0,051
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
7,51E-03
1,29E-02
1,08E-02
1,42E-02
2,35E-03
1,76E-03
1,45E-03
8,80E-01
2,07E-01
4,67E-02
9,23E-03
2,10E-03
2,05E-04
6,42E-05
Copyright Vincotech
13
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Boost Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
I
I
I
D =
single pulse
80 ºC
Ts
=
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
14
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Boost Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
10-1
Z
Z
Z
Z
10-2
10-3
10-4
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
Tj:
0,061
K/W
FWD thermal model values
R (K/W)
τ
(s)
5,55E-03
1,06E-02
1,36E-02
1,75E-02
9,19E-03
1,97E-03
2,64E-03
8,74E-01
1,82E-01
4,64E-02
9,66E-03
3,12E-03
4,08E-04
7,64E-05
Copyright Vincotech
15
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Boost Sw. Protection Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
0,749
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
2,40E-02
5,23E-02
1,96E-01
2,51E-01
1,12E-01
1,14E-01
1,91E+00
1,67E-01
2,18E-02
6,18E-03
1,21E-03
1,50E-04
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical NTC characteristic as a function of temperature
as a function of temperature
R = f(T)
Copyright Vincotech
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09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Buck Switching Characteristics
figure 1.
IGBT
figure 2.
FWD
Typical switching energy losses as a function of collector current
Typical reverse recovered energy loss as a function of collector current
E = f(I C
)
Erec = f(I c)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
350
-8 / 16
0,25
V
V
Ω
Ω
Tj:
350
-8 / 16
0,25
V
V
Ω
VCE
VGE
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
R gon
0,25
figure 3.
IGBT
figure 4.
FWD
Typical switching times as a function of collector current
Typical reverse recovery time as a function of collector current
t = f(I C
)
t rr = f(I C
)
t
t
t
t
t
t
t
t
With an inductive load at
At
VCE
=
350
-8 / 16
0,25
V
V
Ω
25 °C
150
°C
V
Tj =
VGE
R gon
=
=
Tj:
125 °C
150 °C
350
VCE
=
=
=
=
-8 / 16
0,25
V
VGE
R gon
R goff
Ω
Ω
0,25
Copyright Vincotech
17
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Buck Switching Characteristics
figure 6.
FWD
figure 5.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical recovered charge as a function of collector current
I RM = f(I C
)
Q r = f(I C
)
Q
Q
Q
Q
I
I
I
I
350
-8 / 16
0,25
V
V
Ω
At
VCE =
350
-8 / 16
0,25
V
V
Ω
25 °C
At
VCE
VGE
R gon
=
25 °C
VGE
=
=
Tj:
125 °C
150 °C
=
Tj:
125 °C
150 °C
R gon
=
figure 7.
FWD
figure 8.
IGBT
Typical rate of fall of forward and reverse recovery current as a function of collector current
Reverse bias safe operating area
I C = f(VCE
)
di F/dt, di rr/dt = f(I C
)
diF
/
dt
IC MAX
t
t
t
t
I
I
I
I
i
i
i
i
d
ir r
/dt
I
I
I
I
I
I
I
I
V
V
V
V
350
At
V
V
Ω
25 °C
125 °C
150 °C
At
VCE =
-8 / 16
0,25
:
Tj
Tj
=
=
=
175
°C
Ω
VGE
R gon
=
=
R gon
R goff
0,25
0,25
Ω
Copyright Vincotech
18
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Buck Switching Definitions
General conditions
=
=
=
125 °C
0,25 Ω
0,25 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
-8
V
-8
V
VGE (0%) =
VGE (0%) =
16
V
16
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
350
1200
314
V
350
1200
353
V
A
A
ns
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
350
1200
83
V
VC (100%) =
I C (100%) =
350
1200
74
V
A
A
ns
ns
tr
=
Copyright Vincotech
19
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Buck Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
fitted
IF
VF
350
1200
939
643
V
1200
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
219,82
μC
A
ns
t rr
=
Copyright Vincotech
20
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Boost Switching Characteristics
figure 1.
IGBT
figure 2.
FWD
Typical switching energy losses as a function of collector current
Typical reverse recovered energy loss as a function of collector current
Erec = f(I c)
E = f(I C
)
E
E
E
E
E
E
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
350
-8 / 16
0,25
V
V
Ω
Ω
350
-8 / 16
0,25
V
V
Ω
VCE
VGE
=
=
=
=
Tj:
VCE
VGE
=
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
R gon
0,25
figure 4.
FWD
figure 3.
IGBT
Typical reverse recovery time as a function of collector current
Typical switching times as a function of collector current
t rr = f(I C
)
t = f(I C
)
t
t
t
t
t
t
t
t
A
t
VCE
=
350
-8 / 16
0,25
V
V
Ω
25 °C
With an inductive load at
VGE
R gon
=
=
Tj:
Tj =
150
350
°C
V
125 °C
150 °C
VCE
=
=
=
=
-8 / 16
0,25
V
VGE
R gon
R goff
Ω
Ω
0,25
Copyright Vincotech
21
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Typical recovered charge as a function of collector current
Typical peak reverse recovery current current as a function of collector current
Q r = f(I C
)
I RM = f(I C
)
Q
Q
Q
Q
I
I
I
I
350
-8 / 16
0,25
V
V
Ω
350
-8 / 16
0,25
V
V
Ω
At
VCE
VGE
R gon
=
At
VCE =
25 °C
25 °C
=
Tj:
VGE
=
=
Tj:
125 °C
150 °C
125 °C
150 °C
=
R gon
figure 7.
FWD
figure 8.
IGBT
Typical rate of fall of forward and reverse recovery current as a function of collector current
Reverse bias safe operating area
di F/dt, di rr/dt = f(I C
)
I C = f(VCE
)
diF
/
dt
IC MAX
t
t
t
t
I
I
I
I
i
i
i
i
d
ir r
/dt
I
I
I
I
I
I
I
I
V
V
V
V
350
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
-8 / 16
0,25
:
Tj
VGE
R gon
=
=
Tj
=
=
=
175
°C
Ω
R gon
R goff
0,25
0,25
Ω
Copyright Vincotech
22
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Boost Switching Definitions
General conditions
=
=
=
125 °C
0,25 Ω
0,25 Ω
T j
Rgon
R goff
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
-8
V
-8
V
VGE (0%) =
VGE (0%) =
16
V
16
V
VGE (100%) =
VC (100%) =
I C (100%) =
VGE (100%) =
VC (100%) =
I C (100%) =
350
800
290
V
350
800
220
V
A
A
ns
ns
t doff
=
tdon
=
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
t f =
350
800
103
V
VC (100%) =
I C (100%) =
350
800
48
V
A
A
ns
ns
tr
=
Copyright Vincotech
23
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Boost Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
fitted
IF
VF
350
800
1112
385
V
800
A
VF (100%) =
I F (100%) =
I RRM (100%) =
I F (100%) =
Q r (100%) =
A
161,46
μC
A
ns
t rr
=
Copyright Vincotech
24
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Ordering Code & Marking
Version
Ordering Code
without thermal paste
with thermal paste
70-W612NMA1K8M702-LC09FP70
70-W612NMA1K8M702-LC09FP70-/3/
Name
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
YK/Date code
Lot
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Serial
Vincotech
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
UL
TTTTTTTVV
LLLLL
SSSS
Outline
Driver pins
Driver pins
Pin
1.1
X1
4,5
Y1
Pin
X1
Y1
Function
G11-1
Function
G14-5
G14-6
S14-6
78,65
81,55
78,65
81,55
30,15
30,15
68,4
1.52
1.53
1.54
1.55
1.56
1.57
1.58
1.59
1.60
1.61
206,85
241,15
244,05
221,45
226,55
199,8
68,4
68,4
68,4
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
1.10
4,5
S11-1
G11-2
39,5
39,5
19,45
24,55
1,95
4,85
39,15
42,05
S11-2
44,65 GND_desat
44,65 GND_desat
DC+desat
DC+desat
S14-1
46
G13-5
S13-5
G13-6
S13-6
S12-5
199,8
48,9
46
68,4
G14-1
248,2
68,4
G14-2
248,2
48,9
29,2
68,4
S14-2
195,25
1.11
1.12
1.13
19,45
24,55
-2,2
44,65 GND_desat
44,65 GND_desat
1.62
1.63
195,25
252,75
32,1
29,2
G12-5
S12-6
46
G13-1
S13-1
1.64
1.65
1.66
252,75
269,65
269,65
32,1
86,7
89,8
G12-6
1.14
1.15
1.16
1.17
1.18
1.19
1.20
1.21
1.22
-2,2
46,2
48,9
46
Therm2-3
Therm1-3
G13-2
46,2
48,9
29,2
32,1
29,2
32,1
86,7
89,8
S13-2
-6,75
-6,75
50,75
50,75
67,65
67,65
S12-1
Power connections
G12-1
M6 screw
2.1
X2
0
Y2
0
Function
Phase
Phase
Phase
DC+
S12-2
G12-2
2.2
22
0
Therm2-1
Therm1-1
2.3
44
0
2.4
0
110,4
110,4
110,4
0
1.23
1.24
1.25
1.26
105,5
105,5
140,5
140,5
78,65
81,55
78,65
81,55
30,15
30,15
68,4
G11-3
S11-3
2.5
22
Neutral
DC-
2.6
44
G11-4
2.7
101
123
145
101
123
145
202
224
246
202
224
246
Phase
Phase
Phase
DC+
S11-4
2.8
0
1.27 120,45
1.28 125,55
1.29 102,95
1.30 105,85
1.31 140,15
1.32 143,05
1.33 120,45
1.34 125,55
DC+desat
DC+desat
S14-3
2.9
0
2.10
2.11
2.12
2.13
2.14
2.15
2.16
2.17
2.18
110,4
110,4
110,4
0
Neutral
DC-
68,4
G14-3
68,4
G14-4
Phase
Phase
Phase
DC+
68,4
S14-4
0
44,65 GND_desat
44,65 GND_desat
0
110,4
110,4
110,4
1.35
1.36
1.37
98,8
98,8
46
48,9
46
G13-3
S13-3
G13-4
Neutral
DC-
147,2
1.38
1.39
1.40
147,2
94,25
94,25
48,9
29,2
S13-4
S12-3
Capacitor positions
Capacitor
X3
Y3
32,1
G12-3
3.1
3.2
-0,3
17,15
17,15
93,25
93,25
17,15
17,15
93,25
93,25
17,15
17,15
93,25
93,25
1.41 151,75
1.42 151,75
1.43 168,65
1.44 168,65
29,2
S12-4
44,8
32,1
G12-4
3.3
-0,3
86,7
Therm2-2
Therm1-2
G11-5
3.4
44,8
89,8
3.5
100,7
145,8
100,7
145,8
201,7
246,8
201,7
246,8
1.45
1.46
1.47
1.48
206,5
206,5
241,5
241,5
78,65
81,55
78,65
81,55
30,15
30,15
68,4
3.6
S11-5
3.7
G11-6
3.8
S11-6
3.9
1.49 221,45
1.50 226,55
1.51 203,95
DC+desat
DC+desat
S14-5
3.10
3.11
3.12
Copyright Vincotech
25
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12
IGBT
1200 V
1800 A
1800 A
90 A
Buck Switch
D11, D12
D41, D42
T13, T14
D13, D14
D43, D44
C10, C20
Rt
FWD
FWD
650 V
1200 V
650 V
1200 V
650 V
630 V
Buck Diode
Buck Sw. Protection Diode
Boost Switch
IGBT
1800 A
1800 A
120 A
FWD
Boost Diode
FWD
Boost Sw. Protection Diode
Capacitor (DC)
Capacitor
NTC
Thermistor
Copyright Vincotech
26
09 Apr. 2019 / Revision 2
70-W612NMA1K8M702-LC09FP70
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 4
>SPQ
Standard
<SPQ
Sample
Handling instructions for VINco X12 packages see vincotech.com website.
Package data
Package data for VINco X12 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
70-W612NMA1K8M702-LC09FP70-D2-14
09 Apr. 2019
Boost switch Vces conditions added
2
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
27
09 Apr. 2019 / Revision 2
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