80-M212WPA035SC-K389F [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 80-M212WPA035SC-K389F |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总28页 (文件大小：4131K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M212WPA035SC-K389F
datasheet
MiniSKiiP®PACK 2
1200 V / 35 A
Features
MiniSkiip®2 housing
● Twin sixpack configuration for 4Q inverters
● Trench IGBT4 Technology
● Solderless spring contact mounting system
Schematic
Target applications
● Industrial Drives
Types
● 80-M212WPA035SC-K389F
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch (T11-T16)
VCES
IC
Collector-emitter voltage
1200
35
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Vcc = 800 V
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
75
A
113
±20
10
W
V
Short circuit ratings
Tj ≤ 150 °C VGE = 15 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
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80-M212WPA035SC-K389F
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode (D11-D16)
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1200
31
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
100
50
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
81
Maximum junction temperature
175
Inverter Switch (T21-T26)
VCES
IC
Collector-emitter voltage
1200
46
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
VCC = 800 V
ICRM
Ptot
VGES
tSC
Repetitive peak collector current
Total power dissipation
Gate-emitter voltage
tp limited by Tjmax
Tj = Tjmax
105
134
±20
10
A
W
V
Short circuit ratings
Tj ≤ 150 °C
VGE = 15 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode (D21-D26)
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak repetitive reverse voltage
1200
40
V
A
Continuous (direct) forward current
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
170
145
99
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
Maximum junction temperature
175
Copyright Vincotech
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datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
-40…(Tjmax - 25)
DC Test Voltage*
tp = 2 s
5500
2500
6,3
V
Visol
Isolation voltage
AC Voltage
tp = 1 min
V
With std lid
Creepage distance
Clearance
mm
mm
For more informations see handling instructions
With std lid
6,3
For more informations see handling instructions
Comparative Tracking Index
*100 % tested in production
CTI
> 200
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch (T11-T16)
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,00085 25
25
5,3
5,8
6,3
V
V
1,58
1,82
2,11
2,18
2,07
VCEsat
Collector-emitter saturation voltage
15
25
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2,4
µA
nA
Ω
20
120
none
1450
50
Cies
Cres
Qg
f = 1 Mhz
0
25
25
pF
Reverse transfer capacitance
Gate charge
-15/15
#VALUE! #VALUE! 25
200
nC
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
0,84
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
25
150
71
72
32
td(on)
tr
td(off)
tf
Turn-on delay time
Rise time
36
Rgon = 16 Ω
Rgoff = 16 Ω
ns
199
270
90
135
1,61
2,46
1,53
2,50
Turn-off delay time
Fall time
±15
600
25
Qr
Qr
= 1,5 μC
= 3,9 μC
FWD
Eon
Eoff
Turn-on energy (per pulse)
Turn-off energy (per pulse)
FWD
mWs
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode (D11-D16)
Static
25
2,27
2,44
2,36
2,74
VF
IR
125
150
25
Forward voltage
25
V
60
Reverse leakage current
1200
µA
150
3300
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
1,17
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
12
17
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
277
580
1,55
3,88
0,61
1,63
111
89
trr
Qr
ns
di/dt = 690,487 A/μs
di/dt = 577,762 A/μs
±15
600
25
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch (T21-T26)
Static
VGE(th)
Gate-emitter threshold voltage
VGE = VCE
0,0012 25
5,3
5,8
6,3
V
25
150
1,58
1,87
2,30
2,07
VCEsat
ICES
IGES
rg
Collector-emitter saturation voltage
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
15
0
35
V
1200
0
25
25
5
µA
nA
Ω
20
120
none
2000
70
Cies
Cres
Qg
f = 1 Mhz
0
25
25
pF
Reverse transfer capacitance
Gate charge
-15/15
#VALUE! #VALUE! 25
270
nC
Thermal
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,71
K/W
25
125
150
25
125
150
25
125
150
25
125
150
25
125
150
25
311
298
294
131
140
140
208
269
286
73
136
150
3,87
5,27
5,86
1,94
3,20
td(on)
Turn-on delay time
tr
Rise time
Rgon = 16 Ω
Rgoff = 16 Ω
ns
td(off)
Turn-off delay time
Fall time
±15
600
35
tf
Qr
FWD
Qr
FWD
Qr
FWD
= 2 μC
= 4,2 μC
= 5,2 μC
Eon
Turn-on energy (per pulse)
mWs
125
Eoff
Turn-off energy (per pulse)
150
3,52
Copyright Vincotech
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datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode (D21-D26)
Static
25
150
2,37
2,35
2,62
VF
IR
Forward voltage
Reverse leakage current
Thermal
35
V
25
60
5500
1200
150
µA
λpaste = 2,5 W/mK
(HPTP)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,96
K/W
25
12
16
17
IRRM
125
150
25
125
150
25
125
150
25
125
150
25
Peak recovery current
A
344
514
625
2,01
4,21
5,25
0,76
1,66
2,07
126
64
trr
Qr
Reverse recovery time
ns
di/dt = 213 A/μs
di/dt = 196 A/μs
di/dt = 223 A/μs
±15
600
35
Recovered charge
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
125
150
65
Thermistor
R
ΔR/R
R
Rated resistance
25
1
kΩ
%
Deviation of R100
R100
R100 = 1670 Ω
100
100
25
-2
+2
1670
0,76
Ω
Power dissipation constant
A-value
mW/K
1/K
1/K²
7,635*10-3
1,731*10-5
A(25/50)
25
B(25/100)
B-value
25
Vincotech PTC Reference
E
Copyright Vincotech
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80-M212WPA035SC-K389F
datasheet
Inverter Switch (T11-T16) Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
125 °C
150 °C
tp
=
250
150
μs
°C
VGE
=
V
Tj:
Tj =
VGE from
7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
V
Tj:
=
0,84
K/W
IGBT thermal model values
R (K/W)
τ (s)
3,13E-02
5,86E-02
1,55E-01
4,50E-01
8,39E-02
5,63E-02
3,88E-03
6,26E+00
5,33E-01
9,52E-02
3,18E-02
6,19E-03
9,50E-04
4,59E-04
Copyright Vincotech
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80-M212WPA035SC-K389F
datasheet
Inverter Switch (T11-T16) Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80
Ts
=
ºC
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Inverter Diode (D11-D16) Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
101
Z
100
10-1
10-2
10-3
10-5
=
10-4
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
125 °C
150 °C
D =
tp / T
Tj:
R th(j-s)
1,17
K/W
FWD thermal model values
R (K/W)
τ (s)
4,37E-02
8,19E-02
2,17E-01
6,29E-01
1,17E-01
7,87E-02
5,43E-03
8,75E+00
7,45E-01
1,33E-01
4,45E-02
8,65E-03
1,33E-03
6,41E-04
Copyright Vincotech
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20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Inverter Switch (T21-T26) Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
I C = f(VCE
)
I C = f(VCE)
VGE
:
I
I
tp
=
250
15
μs
25 °C
150 °C
tp
Tj
=
=
250
150
7 V to 17 V in steps of 1 V
μs
Tj:
VGE
=
V
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
I C = f(VGE
)
Z th(j-s) = f(tp)
100
I
Z
10-1
10-2
10-3
10-5
10-4
10-3
10-2
10-1
100
101
tp(s)
102
tp
=
100
10
μs
25 °C
150 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
V
=
0,71
K/W
IGBT thermal model values
R (K/W)
τ (s)
2,63E-02
4,93E-02
1,31E-01
3,79E-01
7,06E-02
4,74E-02
3,27E-03
5,27E+00
4,49E-01
8,01E-02
2,68E-02
5,21E-03
8,00E-04
3,86E-04
Copyright Vincotech
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80-M212WPA035SC-K389F
datasheet
Inverter Switch (T21-T26) Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
D =
single pulse
80
Ts
=
ºC
VGE
=
±15
V
Tj =
Tjmax
Copyright Vincotech
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20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Inverter Diode (D21-D26) Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
I F = f(VF)
Z th(j-s) = f(tp)
100
Z
10-1
10-2
10-4
=
10-3
10-2
10-1
100
101
102
tp
=
250
μs
25 °C
150 °C
D =
tp / T
0,96
Tj:
R th(j-s)
K/W
FWD thermal model values
R (K/W)
τ (s)
3,58E-02
6,71E-02
1,78E-01
5,16E-01
9,61E-02
6,45E-02
4,45E-03
7,17E+00
6,11E-01
1,09E-01
3,64E-02
7,09E-03
1,09E-03
5,25E-04
Thermistor Characteristics
figure 1.
Typical PTC characteristic
Thermistor
Typical Thermistor resistance values
as a function of temperature
R = f(T)
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datasheet
Inverter (T11-T16, D11-D16) Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
=
600
±15
16
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
600
±15
25
V
V
A
150 °C
150 °C
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
Tj:
Tj:
VCE
VGE
=
=
=
600
±15
16
V
V
Ω
VCE
VGE
I C
=
=
=
600
±15
25
V
V
A
150 °C
150 °C
R gon
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Inverter (T11-T16, D11-D16) Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
±15
16
°C
V
Tj =
150
600
±15
25
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
Ω
Ω
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
600
600
At
VCE
=
V
V
Ω
At
VCE
=
V
V
A
25 °C
25 °C
Tj:
Tj:
VGE
R gon
=
=
±15
VGE
I C
=
±15
150 °C
150 °C
16
=
25
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datasheet
Inverter (T11-T16, D11-D16) Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
600
At
VCE
VGE
R gon
=
600
±15
16
V
V
Ω
At
VCE
VGE
I C
=
V
V
A
25 °C
25 °C
Tj:
Tj:
=
=
±15
150 °C
150 °C
=
=
25
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
600
±15
16
V
V
Ω
At
VCE
VGE
I C
=
600
±15
25
V
V
A
25 °C
25 °C
Tj:
Tj:
VGE
=
=
=
150 °C
150 °C
R gon
=
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Inverter (T11-T16, D11-D16) Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
600
At
VCE
=
V
V
Ω
25 °C
150 °C
At
VCE
VGE
I C
=
600
±15
25
V
V
A
25 °C
150 °C
VGE
R gon
=
=
±15
=
Tj:
Tj:
16
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
I
IC MAX
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
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datasheet
Inverter (T11-T16, D11-D16) Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
16 Ω
16 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VCE
VGE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
V
V
A
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
600
25
V
600
25
A
tdoff
=
270
ns
tdon
=
72
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
600
25
V
VC (100%) =
I C (100%) =
600
25
V
A
A
135
ns
tr
=
36
ns
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datasheet
Inverter (T11-T16, D11-D16) Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
25
V
I F (100%) =
Q r (100%) =
25
A
A
3,88
μC
17
A
trr
=
580
ns
Copyright Vincotech
19
20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Inverter (T21-T26, D21-D26) Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
Tj:
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
=
600
±15
16
V
V
Ω
Ω
VCE
VGE
I C
=
=
=
600
±15
35
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
With an inductive load at
25 °C
With an inductive load at
25 °C
VCE
VGE
=
=
=
600
±15
16
V
V
Ω
Tj:
VCE
VGE
I C
=
=
=
600
±15
35
V
V
A
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
Copyright Vincotech
20
20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Inverter (T21-T26, D21-D26) Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C
)
t = f(R g)
t
t
With an inductive load at
With an inductive load at
Tj =
150
600
±15
16
°C
Tj =
150
600
±15
35
°C
V
VCE
=
=
=
=
V
V
Ω
Ω
VCE
=
=
=
VGE
R gon
R goff
VGE
I C
V
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(I C
)
trr = f(R gon
)
t
t
600
600
At
VCE
=
V
V
Ω
At
VCE
=
V
V
A
25 °C
25 °C
VGE
R gon
=
=
±15
Tj:
VGE
I C
=
±15
Tj:
125 °C
150 °C
125 °C
150 °C
16
=
35
Copyright Vincotech
21
20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Inverter (T21-T26, D21-D26) Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
600
At
VCE
VGE
R gon
=
600
±15
16
V
V
Ω
At
VCE
VGE
I C
=
V
V
A
25 °C
25 °C
=
Tj:
=
±15
Tj:
125 °C
150 °C
125 °C
150 °C
=
=
35
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon)
I
I
At
VCE
=
600
±15
16
V
V
Ω
At
VCE
VGE
I C
=
600
±15
35
V
V
A
25 °C
25 °C
VGE
=
=
Tj:
=
Tj:
125 °C
150 °C
125 °C
150 °C
R gon
=
Copyright Vincotech
22
20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Inverter (T21-T26, D21-D26) Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt, di rr/dt = f(I C
)
di F/dt, di rr/dt = f(R gon)
diF/dt
dir r/dt
diF/dt
dirr/dt
t
t
i
i
600
At
VCE
=
V
V
Ω
25 °C
125 °C
150 °C
At
VCE
VGE
I C
=
600
±15
35
V
V
A
25 °C
VGE
R gon
=
=
±15
=
125 °C
Tj:
Tj:
16
=
150 °C
figure 15.
IGBT
Reverse bias safe operating area
I C = f(VCE
)
IC MAX
I
I
I
V
At
Tj =
175
°C
Ω
R gon
R goff
=
=
16
16
Ω
Copyright Vincotech
23
20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Inverter (T21-T26, D21-D26) Switching Definitions
General conditions
T j
=
=
=
125 °C
R gon
R goff
16 Ω
16 Ω
figure 1.
IGBT
figure 2.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
VGE (0%) =
-15
15
V
VGE (0%) =
-15
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
35
V
600
35
V
A
A
tdoff
=
269
ns
tdon
=
298
ns
figure 3.
IGBT
figure 4.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
VC (100%) =
I C (100%) =
tf =
600
35
V
VC (100%) =
I C (100%) =
600
35
V
A
A
136
ns
tr
=
140
ns
Copyright Vincotech
24
20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Inverter (T21-T26, D21-D26) Switching Characteristics
figure 5.
FWD
figure 6.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
600
35
V
I F (100%) =
Q r (100%) =
35
A
A
4,21
μC
16
A
trr
=
514
ns
Copyright Vincotech
25
20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Ordering Code & Marking
Version
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Ordering Code
80-M212WPA035SC-K389F-/0A/
80-M212WPA035SC-K389F-/0B/
80-M212WPA035SC-K389F-/1A/
80-M212WPA035SC-K389F-/1B/
80-M212WPA035SC-K389F-/4A/
80-M212WPA035SC-K389F-/4B/
80-M212WPA035SC-K389F-/5A/
80-M212WPA035SC-K389F-/5B/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NN-NNNNNNNNNNNNNN
TTTTTTVVWWYY UL
VIN LLLLL SSSS
Text
NN-NNNNNNNNNNNNNN-TTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
PCB pad table
PCB pad table
Pin
X
Y
Pin
X
Y
Function
DC+2
Function
G14
24,38 -21,8
1
2
46 -12,22
47 -12,22
48 -12,22
0,7
3,9
7,1
Not assembled
S14
3
4
24,38 -15,4
24,38 -12,2
G26
S26
Ph12
Ph12
49 -12,22 10,3
5
24,38
24,38
-9
Ph23
Ph23
50
Not assembled
Not assembled
6
-5,8
51
7
Not assembled
52 -12,22 21,8
53 -24,38 -21,8
G15
G12
8
24,38
12,2
G25
9
Not assembled
54
Not assembled
Not assembled
10
24,38
18,6
Therm1
55
11
12
13
24,38
16,58
16,58
21,8
12,2
15,4
Therm2
G23
Se2
56 -24,38 -12,2
DC+1
DC+1
57 -24,38
-9
58 -24,38 -5,8
DC+1
14
15
16
17
18
19
20
21
22
16,58
16,58
18,6
21,8
DC-2
DC-2
DC+2
59
60
61
Not assembled
Not assembled
Not assembled
13,42 -21,8
Not assembled
62 -24,38
7,1
G16
S16
13,42 -15,4
13,42 -12,2
G24
S24
63 -24,38 15,4
64 -24,38 18,6
65 -24,38 21,8
Ph13
Ph13
13,42
13,42
-9
Ph22
Ph22
-5,8
Not assembled
Not assembled
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
8,38
12,2
G21
Not assembled
Not assembled
Not assembled
2,46
-21,8
DC+2
Not assembled
2,46
2,46
2,46
2,46
-15,4
-12,2
-9
G22
S22
Ph21
Ph21
-5,8
Not assembled
0,03
0,03
0,03
9
Se1
12,2
15,4
DC-1
DC-1
Not assembled
0,03
-8,5
-8,5
-8,5
21,8
-21,8
-18,6
-15,4
G13
S12
Ph11
Ph11
Not assembled
Not assembled
45 -12,22 -5,8
G11
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
26
20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11, T12, T13, T14,
T15, T16
IGBT
1200 V
25 A
25 A
35 A
35 A
Inverter Switch
D11, D12, D13, D14,
D15, D16
FWD
IGBT
1200 V
1200 V
1200 V
Inverter Diode
T21, T22, T23, T24,
T25, T26
Inverter Switch
D21, D22, D23, D24,
D25, D26
FWD
PTC
Inverter Diode
Thermistor
Rt
Copyright Vincotech
27
20 Mar. 2019 / Revision 2
80-M212WPA035SC-K389F
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 72
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 2 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M212WPA035SC-K389F-D2-14
20 Mar. 2019
Correction of Ic/If values
1,2
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
20 Mar. 2019 / Revision 2
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