80-M212WPB025SC-K388F [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | 80-M212WPB025SC-K388F |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总18页 (文件大小：1659K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80ꢀM212WPB025SCꢀK388F
datasheet
1200 V / 25 A
MiniSKiiP PACK 2
Features
MiniSkiip 2 housing
● Twin sixpack configuration for 4Q inverters
● Trench IGBT4 Technology
● Solderless spring contact mounting system
Schematic
Target applications
● Industrial Drives
Types
● 80ꢀM212WPB025SCꢀK388F
Maximum Ratings
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collectorꢀemitter voltage
1200
33
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gateꢀemitter voltage
tp limited by Tjmax
Tj = Tjmax
75
A
95
W
V
±20
tSC
Tj ≤ 150°C
VGE = 15V
10
µs
V
Short circuit ratings
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
Copyright Vincotech
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04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFSM
I2t
Ptot
Tjmax
Peak Repetitive Reverse Voltage
1200
27
V
A
Continuous (direct) forward current
Surge (nonꢀrepetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
100
50
A
50 Hz Single Half Sine Wave
tp = 10 ms
A2s
W
°C
Total power dissipation
Tj = Tjmax
69
Maximum Junction Temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
ꢀ40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
ꢀ40…(Tjmax ꢀ 25)
DC Test Voltage*
AC Voltage
tp = 2 s
5500
2500
V
Visol
Isolation voltage
tp = 1 min
V
Creepage distance
min. 12,7
min. 12,7
> 200
mm
mm
Clearance
Comparative Tracking Index
*100 % tested in production
CTI
Copyright Vincotech
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04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
Gateꢀemitter threshold voltage
VGE = VCE
0,00085 25
25
5,3
1,6
5,8
6,3
2,2
V
V
1,96
2,22
2,28
Collectorꢀemitter saturation voltage
VCEsat
15
25
125
150
ICES
IGES
rg
Collectorꢀemitter cutꢀoff current
Gateꢀemitter leakage current
Internal gate resistance
0
1200
0
25
25
62,5
200
µA
nA
ꢁ
20
none
1450
50
Cies
Cres
Input capacitance
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
Thermal
Thermal grease
thickness ≤ 50 µm
λ = 1 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,00
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
25
71
72
32
td(on)
tr
td(off)
tf
Turnꢀon delay time
Rise time
Rgoff = 16 ꢁ
Rgon = 16 ꢁ
36
ns
199
270
90
135
1,607
2,462
1,527
2,498
Turnꢀoff delay time
Fall time
±15
600
25
Qr
Qr
= 1,5 ꢂC
= 3,9 ꢂC
FWD
Eon
Eoff
Turnꢀon energy (per pulse)
Turnꢀoff energy (per pulse)
FWD
mWs
150
Copyright Vincotech
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04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
150
1
2,47
2,49
2,8
VF
Ir
Forward voltage
25
V
25
60
3300
Reverse leakage current
1200
150
µA
Thermal
Thermal grease
thickness ≤ 50 µm
λ = 1 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,37
K/W
Dynamic
25
150
25
150
25
150
25
150
25
150
12
17
278
IRRM
Peak recovery current
Reverse recovery time
Recovered charge
A
trr
Qr
ns
580
di/dt = 690 A/ꢂs
di/dt = 578 A/ꢂs
1,549
3,882
0,607
1,631
111
±15
600
25
ꢂC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
89
Thermistor
Rated resistance
R
ΔR/R
R
25
1
kꢁ
%
Deviation of R100
R100
R100 = 1670 ꢁ
100
100
25
ꢀ2
+2
1670
0,76
ꢁ
Power dissipation constant
Aꢀvalue
mW/K
1/K
1/K²
7,635*10ꢀ3
1,731*10ꢀ5
A(25/50)
25
B(25/100)
Bꢀvalue
25
Vincotech PTC Reference
E
Copyright Vincotech
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04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
I
I
I
I
I
I
I
I
tp
=
250
15
ꢂs
V
25 °C
125 °C
150 °C
tp
Tj
=
=
250
150
ꢂs
°C
VGE
=
Tj:
VGE from
7 V to 17 V in steps of 1 V
figure 3.
Typical transfer characteristics
IGBT
figure 4.
IGBT
Transient Thermal Impedance as function of Pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
100
I
I
I
I
Z
Z
Z
Z
10ꢀ1
10ꢀ2
10ꢀ3
10ꢀ5
10ꢀ4
10ꢀ3
10ꢀ2
10ꢀ1
100
101
tp(s)
102
tp
=
100
10
ꢂs
V
25 °C
125 °C
150 °C
D =
R th(j-s)
tp / T
VCE
=
Tj:
=
1,00
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
4,33Eꢀ02
2,16Eꢀ01
4,68Eꢀ01
1,79Eꢀ01
5,59Eꢀ02
3,78Eꢀ02
3,72E+00
6,10Eꢀ01
1,52Eꢀ01
2,85Eꢀ02
4,38Eꢀ03
4,07Eꢀ04
Copyright Vincotech
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04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
I C = f(VCE
)
I
I
I
I
At
D =
single pulse
80
Ts
VGE
Tj
=
ºC
V
=
±15
=
Tjmax
Copyright Vincotech
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04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
101
Z
Z
Z
Z
100
D = 0,5
0,2
10ꢀ1
0,1
0,05
0,02
0,01
0,005
0,000
10ꢀ2
10ꢀ4
=
10ꢀ3
10ꢀ2
10ꢀ1
100
101
102
D =
R th(j-s)
tp
=
250
ꢂs
25 °C
150 °C
tp / T
1,37
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
2,62Eꢀ02
2,01Eꢀ01
5,69Eꢀ01
3,29Eꢀ01
1,55Eꢀ01
8,83Eꢀ02
9,28E+00
7,62Eꢀ01
1,47Eꢀ01
2,99Eꢀ02
4,40Eꢀ03
6,49Eꢀ04
Copyright Vincotech
7
04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Thermistor Characteristics
Typical Thermistor resistance values
figure 1.
Thermistor
Typical PTC characteristic
as a function of temperature
R = f(T)
Copyright Vincotech
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04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Inverter Switching Characteristics
Figure 1.
IGBT
Figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(rg)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
VCE
VGE
=
=
=
=
600
±15
16
V
V
ꢁ
ꢁ
T
j
:
VCE
VGE
I C
=
=
=
600
±15
25
V
V
A
T j:
R gon
R goff
16
Figure 3.
FWD
Figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(r g )
E
E
E
E
E
E
E
E
25 °C
125 °C
150 °C
25 °C
125 °C
150 °C
With an inductive load at
With an inductive load at
:
T j
600
±15
16
V
V
ꢁ
:
600
±15
25
V
V
A
VCE
VGE
=
=
=
T j
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
9
04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(r g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
150
600
±15
16
°C
V
150
600
±15
25
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
ꢁ
ꢁ
A
16
Figure 7.
FWD
Figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
600
600
At
VCE
=
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
V
V
A
25 °C
125 °C
150 °C
:
:
Tj
VGE
R gon
=
=
±15
16
Tj
VGE
I C
=
±15
25
=
Copyright Vincotech
10
04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Inverter Switching Characteristics
Figure 9.
FWD
Figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
600
600
±15
16
V
V
ꢁ
25 °C
125 °C
150 °C
V
V
A
25 °C
125 °C
150 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
:
:
T j
=
T j
=
±15
25
=
=
Figure 11.
FWD
Figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
At
VCE
=
600
±15
16
V
V
ꢁ
25 °C
125 °C
150 °C
At
VCE
=
600
±15
25
V
V
A
25 °C
125 °C
150 °C
:
:
T j
VGE
=
=
T j
VGE
I C
=
R gon
=
Copyright Vincotech
11
04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Inverter Switching Characteristics
Figure 13.
FWD
Figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
d
iF
/
d
t
t
t
t
t
t
t
t
t
dir r/dt
i
i
i
i
i
i
i
i
dirr
/dt
600
25 °C
125 °C
150 °C
At
VCE
=
V
V
ꢁ
At
VCE
VGE
I C
=
600
±15
25
V
V
A
:
±15
16
VGE
R gon
=
=
T j
=
=
Figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
I
I
I
I
IC MAX
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
ꢁ
R gon =
R goff =
16
16
ꢁ
Copyright Vincotech
12
04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Inverter Switching Definitions
General conditions
=
=
=
150 °C
16 ꢁ
T j
Rgon
R goff
16 ꢁ
Figure 1.
IGBT
Figure 2.
IGBT
Turnꢀoff Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turnꢀon Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
VCE
VCE
IC
VGE
VGE
tEoff
tEon
ꢀ15
ꢀ15
VGE (0%) =
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
600
25
V
600
25
V
A
A
0,270
0,653
ꢂs
ꢂs
0,072
0,321
ꢂs
ꢂs
t doff
t Eoff
=
=
tdon
tEon
=
=
Figure 3.
IGBT
Figure 4.
IGBT
Turnꢀoff Switching Waveforms & definition of tf
Turnꢀon Switching Waveforms & definition of tr
VCE
IC
IC
VCE
tr
tf
600
600
V
V
VC (100%) =
I C (100%) =
t f =
VC (100%) =
I C (100%) =
25
A
25
A
0,135
µs
0,036
µs
tr
=
Copyright Vincotech
13
04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Inverter Switching Characteristics
Figure 5.
IGBT
Figure 6.
IGBT
Turnꢀoff Switching Waveforms & definition of tEoff
Turnꢀon Switching Waveforms & definition of tEon
Poff
Pon
Eoff
Eon
tEoff
tEon
P off (100%) =
Eoff (100%) =
15,03
2,50
0,65
kW
mJ
ꢂs
P on (100%) =
Eon (100%) =
15,03
2,46
kW
mJ
ꢂs
0,321
t Eoff
=
tEon =
Figure 7.
FWD
Turnꢀoff Switching Waveforms & definition of trr
Id
Vd
fitted
Vd (100%) =
I d (100%) =
I RRM (100%) =
600
V
25
A
ꢀ17
0,580
A
ꢂs
t rr
=
Copyright Vincotech
14
04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Inverter Switching Characteristics
Figure 8.
FWD
Figure 9.
FWD
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)
Qrr
Erec
Id
tErec
Prec
25
A
15,03
1,63
1,00
kW
mJ
ꢂs
I d (100%) =
P rec (100%) =
Erec (100%) =
Q rr (100%) =
3,88
1,00
ꢂC
ꢂs
t Qrr
=
tErec =
Copyright Vincotech
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04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Ordering Code & Marking
Version
with std lid (black V23990ꢀK22ꢀTꢀ2ꢀPM) with thermal paste
with thin lid (white V23990ꢀK23ꢀTꢀ3ꢀPM) with thermal paste
Ordering Code
80ꢀM212WPB025SCꢀK388Fꢀ/1A/
80ꢀM212WPB025SCꢀK388Fꢀ/1B/
Name
Date code
WWYY
UL & VIN
UL VIN
Lot
Serial
NNꢀNNNNNNNNNNNNNN
TTTTTTVV WWYY UL
VIN LLLLL SSSS
Text
NNꢀNNNNNNNNNNNNNNꢀTTTTTTVV
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
WWYY
Datamatrix
TTTTTTTVV
LLLLL
SSSS
Outline
PCB pad table
PCB pad table
Pin
X
Y
Pin
X
Y
Function
DC+2
Function
G15
24,38 ꢀ21,8
1
2
52 ꢀ12,22 21,8
53 ꢀ24,38 ꢀ21,8
Not assembled
G12
3
24,38 ꢀ15,4
24,38 ꢀ12,2
G26
S26
54
Not assembled
Not assembled
4
55
5
24,38
24,38
ꢀ9
Ph23
Ph23
56 ꢀ24,38 ꢀ12,2
DC+1
DC+1
DC+1
6
ꢀ5,8
57 ꢀ24,38
58 ꢀ24,38 ꢀ5,8
ꢀ9
7
Not assembled
8
24,38
12,2
G25
59
60
61
Not assembled
Not assembled
Not assembled
9
Not assembled
10
11
12
13
14
15
16
17
18
19
20
21
22
24,38
24,38
16,58
16,58
16,58
16,58
18,6
21,8
12,2
15,4
18,6
21,8
Therm1
Therm2
G23
Se2
62 ꢀ24,38
7,1
G16
S16
63 ꢀ24,38 15,4
64 ꢀ24,38 18,6
65 ꢀ24,38 21,8
Ph13
Ph13
DCꢀ2
DCꢀ2
DC+2
13,42 ꢀ21,8
Not assembled
13,42 ꢀ15,4
13,42 ꢀ12,2
G24
S24
13,42
13,42
ꢀ9
Ph22
Ph22
ꢀ5,8
Not assembled
Not assembled
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
8,38
12,2
G21
Not assembled
Not assembled
Not assembled
2,46
ꢀ21,8
DC+2
Not assembled
2,46
2,46
2,46
2,46
ꢀ15,4
ꢀ12,2
ꢀ9
G22
S22
Ph21
Ph21
ꢀ5,8
Not assembled
0,03
0,03
0,03
9
Se1
12,2
15,4
DCꢀ1
DCꢀ1
Not assembled
0,03
ꢀ8,5
ꢀ8,5
ꢀ8,5
21,8
ꢀ21,8
ꢀ18,6
ꢀ15,4
G13
S12
Ph11
Ph11
Not assembled
Not assembled
45 ꢀ12,22 ꢀ5,8
G11
G14
46 ꢀ12,22
47 ꢀ12,22
48 ꢀ12,22
0,7
3,9
7,1
S14
Ph12
Ph12
49 ꢀ12,22 10,3
50
51
Not assembled
Not assembled
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
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04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Pinout
Identification
ID
Component
Voltage
Current
Function
Comment
T11 , T12 , T13
T14 , T15 , T16
T21 , T22 , T23
T24 , T25 , T26
IGBT
1200 V
25 A
25 A
Inverter Switch
D11 , D12 , D13
D14 , D15 , D16
D21 , D22 , D23
D24 , D25 , D26
FWD
1200 V
Inverter Diode
Thermistor
Rt
Thermistor
Copyright Vincotech
17
04 Sep. 2017 / Revision 2
80ꢀM212WPB025SCꢀK388F
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 72
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSkiiP® 2 packages see vincotech.com website.
Package data
Package data for MiniSkiiP® 2 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80ꢀM212WPB025SCꢀK388FꢀD2ꢀ14
04 Sep. 2017
New ordering option added
16
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
04 Sep. 2017 / Revision 2
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