80-M312WPA050SH01-K889F45 [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;
| 型号： | 80-M312WPA050SH01-K889F45 |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;High speed switching;Low switching losses |
| 文件： | 总28页 (文件大小：8508K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
80-M312WPA050SH01-K889F45
datasheet
MiniSKiiP® Twin 3
1200 V / 50 A
Topology features
MiniSKiiP® 3 16 mm housing
● Open Emitter configuration
● Temperature sensor
● 2xInverter
● Tandem diode
● HS IGBT4
Component features
● Easy paralleling
● High speed switching
● Low switching losses
Housing features
● Base isolation: Al2O3
Schematic
● Easy assembly in one mounting step
● Flexible PCB design w/o pin holes
● Rugged solderless spring contacts
Target applications
● Embedded Drives
● Industrial Drives
Types
● 80-M312WPA050SH01-K889F45
Copyright Vincotech
1
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
58
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
163
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1300
40
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
100
109
175
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Inverter Switch 2
VCES
Collector-emitter voltage
1200
58
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
150
163
±20
10
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Copyright Vincotech
2
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Diode 2
VRRM
Peak repetitive reverse voltage
1200
53
V
A
IF
Forward current (DC current)
Surge (non-repetitive) forward current
Surge current capability
Tj = Tjmax
Ts = 80 °C
Tj = 150 °C
Ts = 80 °C
IFSM
I2t
270
365
123
175
A
Single Half Sine Wave,
tp = 10 ms
A2s
W
°C
Ptot
Total power dissipation
Tj = Tjmax
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Visol
Visol
DC Test Voltage*
tp = 2 s
5500
2500
V
V
Isolation voltage
AC Voltage
With std lid
tp = 1 min
Creepage distance
Clearance
For more informations see handling
instructions
6,3
mm
mm
With std lid
For more informations see handling
instructions
6,3
Comparative Tracking Index
*100 % tested in production
CTI
≥ 600
Copyright Vincotech
3
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0017
50
25
5,3
5,8
6,3
V
V
25
1,78
2,05
2,38
2,46
2,42(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
1
µA
nA
Ω
20
120
4
Cies
Cres
Qg
2770
160
380
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
0
Thermal
λpaste = 2,5 W/mK
(HPTP)
Thermal resistance junction to sink(2)
Dynamic
0,58
K/W
Rth(j-s)
25
92,2
94,6
96
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
20,2
24
tr
125
150
25
24,6
184,6
236,4
251,6
54,57
87
Rgon = 8 Ω
Rgoff = 8 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
50
tf
125
150
25
ns
90,1
2,05
2,9
QrFWD=1,61 µC
QrFWD=3,04 µC
QrFWD=3,55 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
3,13
2,01
3,18
3,52
Eoff
125
150
Copyright Vincotech
4
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
3,23
3,09
3,03
3,84(1)
2,65
VF
IR
Forward voltage
50
125
150
V
Reverse leakage current
Thermal
Vr = 1300 V
25
µA
λpaste = 2,5 W/mK
(HPTP)
Thermal resistance junction to sink(2)
Dynamic
0,87
K/W
Rth(j-s)
25
32,13
39,68
43,22
108,64
148,68
166,83
1,61
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=2600 A/µs
di/dt=2009 A/µs
di/dt=3015 A/µs
Qr
Recovered charge
±15
600
50
125
150
25
3,04
μC
3,55
0,516
0,987
1,17
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
mWs
A/µs
1844
(dirf/dt)max
125
150
155,86
170,69
Copyright Vincotech
5
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch 2
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0017
50
25
5,3
5,8
6,3
V
V
25
1,78
2,05
2,38
2,46
2,42(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
1
µA
nA
Ω
20
120
4
Cies
Cres
Qg
2770
160
380
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
0
Thermal
λpaste = 2,5 W/mK
(HPTP)
Thermal resistance junction to sink(2)
Dynamic
0,58
K/W
Rth(j-s)
25
99
103
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
103
22
tr
125
150
25
24
25
Rgon = 8 Ω
Rgoff = 8 Ω
185
td(off)
Turn-off delay time
Fall time
125
150
25
245
ns
260
±15
600
50
54,75
90,57
105,76
2,78
4,09
4,57
2,03
3,52
3,92
tf
125
150
25
ns
QrFWD=3,7 µC
QrFWD=7,15 µC
QrFWD=8,84 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
mWs
mWs
Eoff
125
150
Copyright Vincotech
6
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode 2
Static
25
2,22
2,31
2,21
2,54(1)
VF
IR
Forward voltage
50
125
150
25
V
2,5(1)
60
Reverse leakage current
Thermal
Vr = 1200 V
µA
150
4400
8800
λpaste = 2,5 W/mK
(HPTP)
Thermal resistance junction to sink(2)
Dynamic
0,77
K/W
Rth(j-s)
25
52,81
63,56
68,09
199,74
355,14
413,02
3,7
IRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=2640 A/µs
di/dt=2128 A/µs
di/dt=2300 A/µs
Qr
Recovered charge
±15
600
50
125
150
25
7,15
μC
8,84
1,33
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
2,72
mWs
A/µs
3,42
2544
1714
1531
(dirf/dt)max
125
150
Copyright Vincotech
7
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
Imax
d
Rated resistance
Deviation of R100
Maximum Current
Power dissipation constant
A-value
25
1
kΩ
%
R100 = 1670 Ω
100
-2
2
3
mA
25
0,76
mW/K
1/K
7,635x10-3
1,73x10-5
A
B-value
1/K2
B
Vincotech Thermistor Reference
E
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
8
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
50
10
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,582
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,36E-02
7,77E-02
3,13E-01
1,16E-01
3,15E-02
3,29E+00
5,45E-01
8,58E-02
2,13E-02
1,87E-03
Copyright Vincotech
9
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
10
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
10
50
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,871
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
5,56E-02
1,83E-01
4,21E-01
1,66E-01
4,56E-02
2,54E+00
3,24E-01
4,60E-02
7,54E-03
6,91E-04
Copyright Vincotech
11
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switch 2 Characteristics
figure 8.
IGBT
figure 9.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
150
150
VGE
:
7 V
8 V
125
100
75
50
25
0
125
100
75
50
25
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
6
7
8
0
1
2
3
4
5
6
7
8
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
V
250
150
μs
°C
25 °C
VGE
Tj =
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 10.
IGBT
figure 11.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
50
10
40
30
20
10
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0,0
2,5
5,0
7,5
10,0
12,5
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,582
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,36E-02
7,77E-02
3,13E-01
1,16E-01
3,15E-02
3,29E+00
5,45E-01
8,58E-02
2,13E-02
1,87E-03
Copyright Vincotech
12
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switch 2 Characteristics
figure 12.
IGBT
Safe operating area
IC = f(VCE
)
1000
100
10
100µs
1ms
1
10ms
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
13
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Diode 2 Characteristics
figure 13.
FWD
figure 14.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
150
125
100
75
10
-1
10
-2
10
50
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
25
-4
0
0,0
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0,5
1,0
1,5
2,0
2,5
3,0
3,5
4,0
4,5
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,77
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
6,81E-02
1,41E-01
4,03E-01
1,01E-01
5,84E-02
2,32E+00
2,74E-01
6,14E-02
8,37E-03
9,85E-04
Copyright Vincotech
14
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Thermistor Characteristics
figure 15.
Thermistor
Typical PTC characteristic as function of temperature
RT = f(T)
2200
2000
1800
1600
1400
1200
1000
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
15
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switching Characteristics
figure 16.
IGBT
figure 17.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
7
6
5
4
3
2
1
0
7
6
5
4
3
2
1
0
Eon
Eon
Eon
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eoff
Eoff
Eoff
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 18.
FWD
figure 19.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
1,75
1,50
1,25
1,00
0,75
0,50
0,25
0,00
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
16
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switching Characteristics
figure 20.
IGBT
figure 21.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(on)
td(off)
td(on)
tf
tf
-1
10
-1
10
tr
tr
-2
10
-2
10
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 22.
FWD
figure 23.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
17
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switching Characteristics
figure 24.
FWD
figure 25.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
6
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Qr
Qr
Qr
Qr
Qr
Qr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 26.
FWD
figure 27.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
60
50
40
30
20
10
0
100
80
60
40
20
0
IRM
IRM
IRM
IRM
IRM
IRM
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
18
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switching Characteristics
figure 28.
FWD
figure 29.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
4500
12000
10000
8000
6000
4000
2000
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
4000
dirr/dt ──────
3500
3000
2500
2000
1500
1000
500
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 30.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
19
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switching Characteristics 2
figure 31.
IGBT
figure 32.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
10
10
Eon
Eon
Eon
Eon
8
8
Eoff
Eon
Eon
Eoff
6
6
Eoff
Eoff
4
4
Eoff
Eoff
2
2
0
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Rgon
Rgoff
8
figure 33.
FWD
figure 34.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
5
4
3
2
1
0
4,5
4,0
3,5
3,0
2,5
2,0
1,5
1,0
0,5
0,0
Erec
Erec
Erec
Erec
Erec
Erec
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
20
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switching Characteristics 2
figure 35.
IGBT
figure 36.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
td(on)
tf
-1
10
tr
tf
-1
10
tr
-2
10
-3
10
-2
10
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
8
°C
V
150
600
±15
50
°C
VCE
=
=
=
=
VCE
=
=
=
V
V
A
VGE
Rgon
Rgoff
VGE
IC
V
Ω
Ω
8
figure 37.
FWD
figure 38.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
0,9
0,8
0,7
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
Copyright Vincotech
21
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switching Characteristics 2
figure 39.
FWD
figure 40.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
15,0
12,5
10,0
7,5
12
10
8
Qr
Qr
Qr
Qr
6
Qr
5,0
4
Qr
2,5
2
0,0
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
125 °C
150 °C
Tj:
Tj:
V
A
figure 41.
FWD
figure 42.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
80
70
60
50
40
30
20
10
0
150
125
100
75
IRM
IRM
IRM
50
IRM
IRM
IRM
25
0
0
20
40
60
80
100
0
5
10
15
20
25
30
35
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
22
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Inverter Switching Characteristics 2
figure 43.
FWD
figure 44.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
3500
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
dirr/dt ──────
3000
2500
2000
1500
1000
500
0
0
20
40
60
80
100
IC(A)
0
5
10
15
20
25
30
35
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
8
V
V
Ω
125 °C
150 °C
600
±15
50
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 45.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
120
IC MAX
100
80
60
40
20
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
8
8
Ω
Copyright Vincotech
23
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Switching Definitions
figure 46.
IGBT
figure 47.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 48.
IGBT
figure 49.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
24
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Switching Definitions
figure 50.
FWD
figure 51.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
25
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Ordering Code
Version
Ordering Code
With std lid (6.5mm height) + no thermal grease
With thin lid (2.8mm height) + no thermal grease
80-M312WPA050SH01-K889F45-/0A/
80-M312WPA050SH01-K889F45-/0B/
80-M312WPA050SH01-K889F45-/1A/
80-M312WPA050SH01-K889F45-/1B/
80-M312WPA050SH01-K889F45-/4A/
80-M312WPA050SH01-K889F45-/4B/
80-M312WPA050SH01-K889F45-/5A/
80-M312WPA050SH01-K889F45-/5B/
With std lid (6.5mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With thin lid (2.8mm height) + thermal grease (0,8 W/mK, P12, silicone-based)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, TG20032, silicone-free)
With std lid (6.5mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
With thin lid (2.8mm height) + thermal grease (2,5 W/mK, HPTP, silicone-based)
Marking
Name
NN-NNNNNNNNNNNNNN-
TTTTTTVV
Date code
UL & VIN
Lot
Serial
Text
WWYY
UL VIN
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
-25,3
-6,4
-3,2
0
Function
+DC
G11
E11
45
46
47
48
49
50
51
52
53
54
55
56
57
58
59
60
61
62
63
64
65
66
67
68
69
70
71
72
73
74
75
76
77
78
79
80
81
82
83
84
85
86
87
88
not assembled
8,74
15,83
15,83
15,83
15,83
15,83
-29,18
-29,18
-32,82
L3
G5
L3
2
11,94
3
8,74
4
L3'
not assembled
5
3,2
L3'
-35,68
-35,68
-36,58
-36,58
22,1
25,3
-DC/W
-DC/V
+DC
6
not assembled
7
15,83
15,83
15,83
15,83
8,13
15,7
18,9
22,1
25,3
-25,3
-DC/W'
-25,3
-22,1
8
-DC/W'
E12
+DC
9
not assembled
not assembled
not assembled
-6,1
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
36
37
38
39
40
41
42
43
44
G12
+DC
not assembled
-36,58
-39,32
-39,32
-39,32
-39,32
L2
T-
8,13
8,13
22,1
25,3
-DC/V'
15,7
E10
18,9
T+
not assembled
-12,18
22,1
25,3
-DC/W
-DC/V
1,82
1,82
1,82
0,43
0,43
G9
E9
L2'
-8,98
not assembled
not assembled
not assembled
-12,5
-5,79
22,1
25,3
-DC/V'
G10
-40,22
-40,22
-40,22
-50,18
G3
E3
L2
L1
not assembled
not assembled
not assembled
not assembled
-5,79
-9,3
-6,09
-25,3
not assembled
not assembled
not assembled
not assembled
not assembled
not assembled
-1,82
L2'
not assembled
-7,27
-7,27
22,1
25,3
22,1
25,3
-DC/U'
E8
-14,97
-14,97
-DC/U'
G8
-50,18
9,5
-DC/U
not assembled
not assembled
not assembled
-5,42
not assembled
not assembled
-25,3
-53,82
-53,82
-53,82
L1
G1
E1
-16,05
-19,22
L1'
-22,1
-25,3
+DC
-18,9
not assembled
-11,82
not assembled
not assembled
not assembled
3,1
-19,7
-19,7
-19,7
G7
E7
L1'
-8,62
-5,42
-53,82
-53,82
-53,82
-53,82
-53,82
G2
E2
not assembled
not assembled
22,1
6,3
9,5
-DC/U
E4
-22,67
-22,67
E6
22,1
25,3
25,3
G6
G4
not assembled
Pad positions refers to center point. For more informations on pad design please see package data
Copyright Vincotech
26
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Pinout
DC+
1,11,35,52,53
D1-1
D3-1
D5-1
T7
D7
T9
D9
T11
D11
T1
T3
T5
16
17
2
3
37
38
79
80
65
47
G9
E9
G11
E11
G1
E1
G3
E3
G5
G7
E7
D1-2
66
D3-2
D5-2
L1
L2
L3
L1'
L2'
L3'
68,78
57,67
46,48
34,39
18,25
4,5
D2-1
D4-1
D6-1
D6-2
D10
D12
D8
T8
T10
T12
T6
T2
T4
30
28
20
14
10
9
84
85
88
43
G10
E10
G12
G2
E2
G4
E4
G6
G8
E8
D2-2
87
D4-2
42
Rt
E6
E12
-DC/U
75,86
-DC/V
51,61
-DC/W
50,60
-DC/U'
27,29
-DC/V'
13,19
-DC/W'
7,8
T-
58
T+
59
Identification
Component
Voltage
Current
Function
Comment
ID
T2, T1, T4, T3, T6, T5
IGBT
1200 V
50 A
Inverter Switch
Inverter Diode
D1, D2, D3, D4, D5,
FWD
IGBT
1300 V
1200 V
1200 V
50 A
50 A
50 A
D6
T8, T7, T10, T9, T12,
Inverter Switch 2
T11
D7, D8, D9, D10, D11,
FWD
Inverter Diode 2
Thermistor
D12
Rt
Thermistor
Copyright Vincotech
27
16 Dec. 2022 / Revision 2
80-M312WPA050SH01-K889F45
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 48
>SPQ
Standard
<SPQ
Sample
Handling instructions for MiniSKiiP® 3 packages see vincotech.com website.
Package data
Package data for MiniSKiiP® 3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
80-M312WPA050SH01-K889F45-D2-14
16 Dec. 2022
New datasheet format, module is unchanged
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
28
16 Dec. 2022 / Revision 2
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Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
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80.000MHZ49TSMD/3/100/0+50/SR
Series - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZ49TSMD/3/7.5/-10+60/SR
Series - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZ49TSMD/3/7.5/0+50/SR
Series - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZ49TSMD/50/30/-20+70/8
Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
80.000MHZ49TSMD/50/30/0+50/32
Parallel - 5Th Overtone Quartz Crystal, 80MHz Nom, ROHS COMPLIANT, HERMETIC SEALED, RESISTANCE WELD, SMD, 3 PIN
EUROQUARTZ
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