A0-VP126TA200SH-L999F74T [VINCOTECH]
Easy paralleling;High speed switching;Low switching losses;型号: | A0-VP126TA200SH-L999F74T |
厂家: | VINCOTECH |
描述: | Easy paralleling;High speed switching;Low switching losses |
文件: | 总18页 (文件大小:6420K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
A0-VP126TA200SH-L999F74T
datasheet
VINcoPACK E3
1200 V / 200 A
Topology features
VINco E3 17 mm housing
● Inverter
● Kelvin Emitter for improved switching performance
● Tandem inverter diode
● Temperature sensor
Component features
● Easy paralleling
● High speed switching
● Low switching losses
Housing features
● Base isolation: IMB
● SoLid Cover Technology
Schematic
● Standard mid-power industry package
● Avaliable with press-fit and solder-pin
● Tin plated solder pin terminals
Target applications
● Industrial Drives
Types
● A0-VP126TA200SH-L999F74T
Copyright Vincotech
1
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Value
Unit
Inverter Switch
VCES
Collector-emitter voltage
1200
208
600
517
±20
10
V
A
IC
Collector current (DC current)
Repetitive peak collector current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
Tj = 150 °C
ICRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
V
VGES
Gate-emitter voltage
tSC
Short circuit ratings
VGE = 15 V, VCC = 800 V
µs
°C
Tjmax
Maximum junction temperature
175
Inverter Diode
VRRM
Peak repetitive reverse voltage
1300
109
300
313
175
V
A
IF
Forward current (DC current)
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
IFRM
tp limited by Tjmax
Tj = Tjmax
A
Ptot
W
°C
Tjmax
Maximum junction temperature
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
-40…+125
°C
°C
Operation temperature under switching
condition
-40…+(Tjmax - 25)
Isolation Properties
Isolation voltage
Isolation voltage
Creepage distance
Clearance
Visol
Visol
DC Test Voltage*
AC Voltage
tp = 2 s
6000
2500
>12,7
9
V
tp = 1 min
V
mm
mm
Comparative Tracking Index
*100 % tested in production
CTI
≥ 200
Copyright Vincotech
2
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Switch
Static
VGE(th)
Gate-emitter threshold voltage
VCE = VGE
0,0076
200
25
5,1
5,8
6,4
V
V
25
1,78
1,99
2,28
2,37
2,42(1)
VCEsat
Collector-emitter saturation voltage
15
125
150
ICES
IGES
rg
Collector-emitter cut-off current
Gate-emitter leakage current
Internal gate resistance
Input capacitance
0
1200
0
25
25
2,6
µA
nA
Ω
20
240
None
12300
690
Cies
Cres
Qg
pF
pF
nC
f = 1 Mhz
0
25
25
25
Reverse transfer capacitance
Gate charge
±15
0
1600
Thermal
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,18
K/W
25
80,64
81,6
td(on)
Turn-on delay time
Rise time
125
150
25
ns
ns
82,24
24,64
27,52
28,16
156,16
218,88
239,04
32,99
73,85
86,27
3,69
tr
125
150
25
Rgon = 2 Ω
Rgoff = 2 Ω
td(off)
Turn-off delay time
Fall time
125
150
25
ns
±15
600
200
tf
125
150
25
ns
QrFWD=5,37 µC
QrFWD=11,29 µC
QrFWD=13,23 µC
Eon
Turn-on energy (per pulse)
Turn-off energy (per pulse)
125
150
25
5,69
mWs
mWs
6,18
7,6
Eoff
125
150
13,75
15,74
Copyright Vincotech
3
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VGE [V]
VGS [V]
Min
Max
VF [V]
IF [A]
Inverter Diode
Static
25
2,06
2,36
2,12
3,32
2,64(1)
VF
IR
Forward voltage
45
125
150
V
Reverse leakage current
Thermal
Vr = 1300 V
25
1,8
µA
λpaste = 3,4 W/mK
(PSX)
(2)
Rth(j-s)
Thermal resistance junction to sink
Dynamic
0,3
K/W
25
111,02
144,05
153,64
155,23
237,96
264,04
5,37
IRRM
Peak recovery current
125
150
25
A
trr
Reverse recovery time
125
150
25
ns
di/dt=7186 A/µs
di/dt=6822 A/µs
di/dt=6809 A/µs
Qr
Recovered charge
±15
600
200
125
150
25
11,29
13,23
2,38
μC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
125
150
25
5,04
mWs
A/µs
5,91
5086
(dirf/dt)max
125
150
3885
3862
Copyright Vincotech
4
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Characteristic Values
Symbol
Parameter
Conditions
Values
Typ
Unit
VCE [V] IC [A]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
VGE [V]
VGS [V]
Min
Max
Thermistor
Static
R
ΔR/R
P
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
25
5
kΩ
%
R100 = 493 Ω
100
-5
5
245
1,4
mW
mW/K
K
d
25
B(25/50)
Tol. ±2 %
Tol. ±2 %
3375
3437
B(25/100)
B-value
K
Vincotech Thermistor Reference
K
(1)
Value at chip level
(2)
Only valid with pre-applied Vincotech thermal interface material.
Copyright Vincotech
5
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
600
600
VGE
:
7 V
8 V
500
400
300
200
100
0
500
400
300
200
100
0
9 V
10 V
11 V
12 V
13 V
14 V
15 V
16 V
17 V
0
1
2
3
4
5
6
7
0
1
2
3
4
5
6
7
V
CE(V)
VCE(V)
tp
=
=
tp
=
250
15
μs
250
150
μs
°C
25 °C
VGE
Tj =
V
125 °C
150 °C
Tj:
VGE from 7 V to 17 V in steps of 1 V
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as a function of pulse width
IC = f(VGE
)
Zth(j-s) = f(tp)
0
150
10
125
100
75
50
25
0
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
0
2
4
6
8
10
10
10
tp(s)
V
GE(V)
tp
=
=
250
10
μs
V
D =
tp / T
0,184
25 °C
VCE
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
IGBT thermal model values
R (K/W)
τ (s)
4,08E-02
3,87E-02
6,61E-02
2,71E-02
1,12E-02
2,91E+00
5,88E-01
9,69E-02
1,85E-02
6,04E-04
Copyright Vincotech
6
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Inverter Switch Characteristics
figure 5.
IGBT
Safe operating area
IC = f(VCE
)
1000
10µs
100
10
100µs
1ms
10ms
1
100ms
DC
0,1
0,01
1
10
100
1000
10000
V
CE(V)
D =
single pulse
Ts =
80
15
°C
V
VGE
=
Tj =
Tjmax
Copyright Vincotech
7
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Inverter Diode Characteristics
figure 6.
FWD
figure 7.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Zth(j-s) = f(tp)
0
400
300
200
100
0
10
-1
10
-2
10
0,5
0,2
0,1
-3
10
0,05
0,02
0,01
0,005
0
-4
10
-5
-4
10
-3
10
-2
10
-1
10
0
1
2
0
1
2
3
4
5
6
7
10
10
10
10
tp(s)
VF(V)
tp
=
250
μs
D =
tp / T
0,303
25 °C
125 °C
150 °C
Rth(j-s) =
Tj:
K/W
FWD thermal model values
R (K/W)
τ (s)
3,66E-02
5,62E-02
1,04E-01
9,43E-02
1,17E-02
3,45E+00
7,71E-01
1,24E-01
2,46E-02
1,19E-03
Copyright Vincotech
8
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Thermistor Characteristics
figure 8.
Thermistor
Typical NTC characteristic as function of temperature
RT = f(T)
6000
5000
4000
3000
2000
1000
0
20
40
60
80
100
120
140
T(°C)
Copyright Vincotech
9
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Inverter Switching Characteristics
figure 9.
IGBT
figure 10.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of IGBT turn on gate resistor
E = f(IC)
E = f(Rg)
30
25
20
15
10
5
20,0
17,5
15,0
12,5
10,0
7,5
Eon
Eon
Eoff
Eoff
Eoff
Eon
Eoff
Eoff
Eon
Eon
Eoff
Eon
5,0
2,5
0
0,0
0
50
100
150
200
250
300
350
400
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
=
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
Rgon
Rgoff
2
figure 11.
FWD
figure 12.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of IGBT turn on gate resistor
Erec = f(IC)
Erec = f(Rg)
8
7
6
5
4
3
2
1
0
8
7
6
5
4
3
2
1
0
Erec
Erec
Erec
Erec
Erec
Erec
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
6
7
8
9
IC(A)
Rg(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
10
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Inverter Switching Characteristics
figure 13.
IGBT
figure 14.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of IGBT turn on gate resistor
t = f(IC)
t = f(Rg)
0
10
0
10
td(off)
td(off)
td(on)
-1
10
tf
td(on)
tr
-1
10
tf
tr
-2
10
-3
10
-2
10
0
50
100
150
200
250
300
350
400
IC(A)
0
1
2
3
4
5
6
7
8
9
Rg(Ω)
With an inductive load at
With an inductive load at
Tj =
Tj =
150
600
±15
2
°C
V
150
600
±15
200
°C
V
VCE
=
=
=
=
VCE
=
=
=
VGE
Rgon
Rgoff
VGE
IC
V
V
Ω
Ω
A
2
figure 15.
FWD
figure 16.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
trr = f(IC)
trr = f(Rgon)
0,40
0,35
0,30
0,25
0,20
0,15
0,10
0,05
0,00
0,6
0,5
0,4
0,3
0,2
0,1
0,0
trr
trr
trr
trr
trr
trr
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
11
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Inverter Switching Characteristics
figure 17.
FWD
figure 18.
FWD
Typical recovered charge as a function of collector current
Typical recovered charge as a function of IGBT turn on gate resistor
Qr = f(IC)
Qr = f(Rgon)
20,0
17,5
15,0
12,5
10,0
7,5
17,5
15,0
12,5
10,0
7,5
Qr
Qr
Qr
Qr
Qr
5,0
Qr
5,0
2,5
2,5
0,0
0,0
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 19.
FWD
figure 20.
FWD
Typical peak reverse recovery current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
IRM = f(IC)
IRM = f(Rgon)
175
150
125
100
75
250
200
150
100
50
IRM
IRM
IRM
IRM
IRM
50
IRM
25
0
0
0
50
100
150
200
250
300
350
400
0
1
2
3
4
5
6
7
8
9
IC(A)
Rgon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
Copyright Vincotech
12
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Inverter Switching Characteristics
figure 21.
FWD
figure 22.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of turn on gate resistor
diF/dt, dirr/dt = f(IC)
diF/dt, dirr/dt = f(Rgon)
9000
15000
12500
10000
7500
5000
2500
0
diF/dt ‒ ‒ ‒ ‒ ‒
diF/dt ‒ ‒ ‒ ‒ ‒
dirr/dt ──────
8000
dirr/dt ──────
7000
6000
5000
4000
3000
2000
1000
0
0
50
100
150
200
250
300
350
400
IC(A)
0
1
2
3
4
5
6
7
8
9
R
gon(Ω)
With an inductive load at
With an inductive load at
25 °C
25 °C
VCE
VGE
Rgon
=
=
=
VCE
VGE
IC
=
=
=
600
±15
2
V
V
Ω
125 °C
150 °C
600
±15
200
V
V
A
125 °C
150 °C
Tj:
Tj:
figure 23.
IGBT
Reverse bias safe operating area
IC = f(VCE
)
450
IC MAX
400
350
300
250
200
150
100
50
0
0
250
500
750
1000
1250
1500
V
CE(V)
Tj =
At
150
°C
Ω
Rgon
Rgoff
=
=
2
2
Ω
Copyright Vincotech
13
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Inverter Switching Definitions
figure 24.
IGBT
figure 25.
IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff (ttEoff = integrating time for Eoff
)
Turn-on Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
tdoff
IC
IC
VGE
VGE
VCE
tEoff
VCE
tEon
figure 26.
IGBT
figure 27.
IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
IC
IC
VCE
tr
VCE
tf
Copyright Vincotech
14
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Inverter Switching Definitions
figure 28.
FWD
figure 29.
FWD
Turn-off Switching Waveforms & definition of trr
Turn-on Switching Waveforms & definition of tQr (tQr = integrating time for Qr)
Qr
IF
IF
fitted
VF
Copyright Vincotech
15
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Ordering Code
Marking
Version
Ordering Code
Without thermal paste
A0-VP126TA200SH-L999F74T
A0-VP126TA200SH-L999F74T-/3/
With thermal paste (3,4 W/mK, PSX-P7)
Name
VIN
Date code
Lot
Serial
Text
NN-NNNNNNNNNNNNNN-
TTTTTTVV
VIN
WWYY
LLLLL
SSSS
Type&Ver
Lot number
Serial
Date code
Datamatrix
TTTTTTTVV
LLLLL
SSSS
WWYY
Outline
Pin table [mm]
Pin
1
X
Y
0
0
0
0
0
0
0
0
0
0
0
0
Function
G12
19,05
22,86
34,29
38,1
2
S12
3
G11
4
S11
5
49,53
53,34
64,77
68,58
80,01
83,82
95,25
99,06
G14
6
S14
7
G13
8
S13
9
G16
10
11
12
13
14
15
16
17
18
S16
G15
S15
118,11 15,865
118,11 19,675
118,11 23,485
118,11 34,915
118,11 38,725
118,11 42,535
DC-123
DC-123
DC-123
DC+123
DC+123
DC+123
Therm1
Therm2
Ph3
19 100,965
58,4
58,4
20
21
22
23
24
25
26
27
28
29
30
31
32
33
34
35
97,155
81,915
78,105
74,295
59,055
55,245
51,435
36,195
32,385
28,575
0
58,4
58,4
Ph3
58,4
Ph3
58,4
Ph2
58,4
Ph2
58,4
Ph2
58,4
Ph1
58,4
Ph1
58,4
Ph1
42,535
38,725
34,915
23,485
19,675
15,865
DC+123
DC+123
DC+123
DC-123
DC-123
DC-123
0
0
0
0
0
Copyright Vincotech
16
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Pinout
DC+123
16,17,18,30,31,32
D11-1
D13-1
D15-1
D15-2
T12
T14
T16
G12
1
D11-2
G14
5
D13-2
G16
9
S12
2
S14
6
S16
10
Ph1
27,28,29
Ph2
24,25,26
Ph3
21,22,23
D12-1
D12-2
D14-1
D14-2
D16-1
T11
T13
T15
G11
3
G13
7
G15
11
D16-2
Rt
S11
4
S13
8
S15
12
Therm1
20
Therm2
19
DC-123
13,14,15,33,34,35
Identification
Component
Voltage
Current
Function
Comment
ID
T11, T12, T13, T14,
IGBT
1200 V
200 A
150 A
Inverter Switch
T15, T16
D11, D12, D13, D14,
D15, D16
FWD
NTC
1300 V
Inverter Diode
Thermistor
Rt
Copyright Vincotech
17
06 Apr. 2022 / Revision 2
A0-VP126TA200SH-L999F74T
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 24
>SPQ
Standard
<SPQ
Sample
Handling instructions for VINco E3 packages see vincotech.com website.
Package data
Package data for VINco E3 packages see vincotech.com website.
Vincotech thermistor reference
See Vincotech thermistor reference table at vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Initial release
Pages
A0-VP126TA200SH-L999F74T-D1-14
A0-VP126TA200SH-L999F74T-D2-14
19 Oct. 2021
6 Apr. 2022
Add UL recognition information
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
18
06 Apr. 2022 / Revision 2
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