V23990-K237-F40-PM [VINCOTECH]
High speed switching;Low collector emitter saturation voltage;
| 型号： | V23990-K237-F40-PM |
| 厂家： | 
VINCOTECH |
| 描述： | High speed switching;Low collector emitter saturation voltage |
| 文件： | 总16页 (文件大小：1139K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-K237-F40-PM
MiniSKiiP®2 PACK
1200V / 25A
Features
MiniSKiiP® 2 housing
● Solderless interconnection
● Trench Fieldstop IGBT4 technology
Target Applications
Schematic
● Servo Drives
● Industrial Motor Drives
● UPS
Types
● V23990-K237-F40-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
T1,T2,T3,T4,T5,T6
VCE
IC
ICpulse
Ptot
Collector-emitter break down voltage
DC collector current
1200
V
A
Th=80°C
33
40
Tj=Tjmax
Tc=80°C
tp limited by Tjmax
Repetitive peak collector current
Power dissipation
75
A
Th=80°C
Tc=80°C
89
W
V
135
Tj≤150°C
VGE
Gate-emitter peak voltage
Short circuit ratings
±20
VGE=15V
tSC
10
µs
V
VCC
800
Tjmax
Maximum Junction Temperature
175
°C
copyright Vincotech
1
Revision: 1
V23990-K237-F40-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
D1,D2,D3,D4,D5,D6
Peak Repetitive Reverse Voltage
DC forward current
VRRM
IF
IFRM
Ptot
1200
V
A
Th=80°C
Tc=80°C
25
32
Tj=Tjmax
tp=10ms half sine
Tj=Tjmax
Repetitive peak forward current
Power dissipation
160
A
Th=80°C
Tc=80°C
62
95
W
°C
Tjmax
Maximum Junction Temperature
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
°C
°C
Operation temperature under switching condition
-40…+(Tjmax - 25)
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
t=2s
DC voltage
4000
V
min 12,7
min 12,7
mm
mm
copyright Vincotech
2
Revision: 1
V23990-K237-F40-PM
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
T1,T2,T3,T4,T5,T6
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,15
0,05
300
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
0,00085
25
V
V
1,35
1,88
2,2
15
0
1200
0
mA
nA
Ω
20
-
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
112
113
29,3
34,7
231
303
91
137
1,87
2,77
1,49
2,43
Rise time
ns
td(off)
tf
Turn-off delay time
Rgoff=32 Ω
Rgon=32 Ω
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
1430
115
85
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
Vcc=960V
±15
40
120
nC
Thermal grease
thickness≤50µm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
1,2
D1,D2,D3,D4,D5,D6
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,5
2,47
2,49
13,5
18,3
319
544
1,48
3,69
174
64
2,75
VF
IRRM
trr
Diode forward voltage
25
V
A
Peak reverse recovery current
Reverse recovery time
ns
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
µC
di(rec)max
/dt
A/µs
mWs
0,52
1,44
Erec
Thermal grease
thickness≤50µm
λ=1W/mK
RthJH
K/W
Thermal resistance chip to heatsink per chip
1,52
Thermistor
Rated resistance
Deviation of R100
R100
R
T=25°C
T=100°C
T=100°C
T=25°C
T=25°C
T=25°C
1000
Ω
%
∆R/R R100=1670 Ω
-3
3
P
1670,313
Ω
Power dissipation constant
A-value
mW/K
1/K
1/K²
B(25/50) Tol. %
B(25/100) Tol. %
7,635*10-3
1,731*10-5
B-value
Vincotech NTC Reference
E
copyright Vincotech
3
Revision: 1
V23990-K237-F40-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 1
T1,T2,T3,T4,T5,T6 IGBT
Figure 2
T1,T2,T3,T4,T5,T6 IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
75
75
60
45
30
15
60
45
30
15
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
tp =
250
25
µs
250
150
µs
Tj =
Tj =
°C
°C
VGE from
VGE from
7 V to 17 V in steps of 1 V
7 V to 17 V in steps of 1 V
Figure 3
T1,T2,T3,T4,T5,T6 IGBT
Figure 4
D1,D2,D3,D4,D5,D6 FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
IC = f(VGE
)
25
75
60
45
30
15
0
Tj = 25°C
20
15
10
5
Tj = Tjmax-25°C
Tj = Tjmax-25°C
Tj = 25°C
0
0
VGE (V)
VF (V)
2
4
6
8
10
12
0
1
2
3
4
5
At
At
tp =
tp =
250
10
µs
250
µs
VCE
=
V
copyright Vincotech
4
Revision: 1
V23990-K237-F40-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 5
T1,T2,T3,T4,T5,T6 IGBT
Figure 6
T1,T2,T3,T4,T5,T6 IGBT
Typical switching energy losses
as a function of collector current
E = f(IC)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
8
6
4
2
0
8
6
4
2
0
Eon High T
Eon High T
Eon Low T
Eon Low T
Eoff High T
Eoff High T
Eoff Low T
Eoff Low T
I C (A)
R G ( Ω )
0
10
20
30
40
50
0
30
60
90
120
150
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
32
600
±15
25
V
V
Rgon
Rgoff
=
=
Ω
Ω
A
32
Figure 7
T1,T2,T3,T4,T5,T6 IGBT
Figure 8
T1,T2,T3,T4,T5,T6 IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(IC)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
2
2
Erec
Tj = Tjmax -25°C
1,6
1,6
Tj = Tjmax -25°C
1,2
1,2
0,8
0,4
0
Erec
0,8
Erec
Tj = 25°C
Tj = 25°C
Erec
0,4
0
I C (A)
R G ( Ω )
0
10
20
30
40
50
0
30
60
90
120
150
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
600
±15
32
600
±15
25
V
V
Rgon
=
Ω
A
copyright Vincotech
5
Revision: 1
V23990-K237-F40-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 9
T1,T2,T3,T4,T5,T6 IGBT
Figure 10
T1,T2,T3,T4,T5,T6 IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdoff
tdon
tf
tf
0,1
0,1
tdon
tr
tr
0,01
0,01
0,001
0,001
I C (A)
R G ( Ω )
0
10
20
30
40
50
0
30
60
90
120
150
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
150
600
±15
32
°C
V
150
600
±15
25
°C
V
=
=
=
=
V
V
Rgon
Rgoff
=
=
Ω
Ω
A
32
Figure 11
D1,D2,D3,D4,D5,D6 FWD
Figure 12
D1,D2,D3,D4,D5,D6 FWD
Typical reverse recovery time as a
function of collector current
trr = f(IC)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
1
1
trr
0,8
0,8
0,6
0,4
0,2
trr
Tj = Tjmax -25°C
Tj = Tjmax -25°C
0,6
0,4
0,2
0
trr
trr
Tj = 25°C
Tj = 25°C
0
0
I C (A)
R g on ( Ω )
0
10
20
30
40
50
30
60
90
120
150
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
25/150
600
25/150
600
=
=
±15
V
25
A
Rgon
=
VGE =
32
Ω
±15
V
copyright Vincotech
6
Revision: 1
V23990-K237-F40-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 13
D1,D2,D3,D4,D5,D6 FWD
Figure 14
D1,D2,D3,D4,D5,D6 FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(IC)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
5
5
Qrr
Tj = Tjmax -25°C
4
3
2
1
0
4
3
2
1
Tj = Tjmax -25°C
Qrr
Qrr
Tj = 25°C
Tj = 25°C
Qrr
0
0
I C (A)
R g on ( Ω)
0
10
20
30
40
50
30
60
90
120
150
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
25/150
600
25/150
600
=
=
±15
V
25
A
Rgon
=
VGE =
32
Ω
±15
V
Figure 15
D1,D2,D3,D4,D5,D6 FWD
Figure 16
D1,D2,D3,D4,D5,D6 FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(IC)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
25
50
40
30
20
10
20
Tj = Tjmax -25°C
IRRM
15
Tj = 25°C
IRRM
10
5
Tj = Tjmax - 25°C
Tj = 25°C
IRRM
0
0
0
I C (A)
R gon ( Ω )
0
10
20
30
40
50
30
60
90
120
150
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
°C
V
°C
V
25/150
600
25/150
600
=
=
±15
V
25
A
Rgon
=
VGE =
32
Ω
±15
V
copyright Vincotech
7
Revision: 1
V23990-K237-F40-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 17
D1,D2,D3,D4,D5,D6 FWD
Figure 18
D1,D2,D3,D4,D5,D6 FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(IC)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
1000
1800
dI0/dt
dI0/dt
µ
µ
µ
µ
dIrec/dt
dIrec/dt
1500
1200
900
600
300
0
800
600
400
200
0
dIo/dtLow T
di0/dtHigh T
dIrec/dtLow T
dIrec/dtHigh T
I C (A)
R gon ( Ω )
0
10
20
30
40
50
0
30
60
90
120
150
At
Tj =
At
Tj =
VR =
IF =
°C
V
°C
V
25/150
600
25/150
600
VCE
VGE
=
=
±15
V
25
A
Rgon
=
VGE =
32
Ω
±15
V
Figure 19
T1,T2,T3,T4,T5,T6 IGBT
Figure 20
D1,D2,D3,D4,D5,D6 FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
10-4
10-3
10-2
10-1
100
1011
10-5
10-4
10-3
10-2
10-1
100
101
t p (s)
t p (s)
1
At
At
tp / T
1,20
tp / T
1,52
D =
D =
RthJH
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,03
Tau (s)
5,7E+00
8,1E-01
1,6E-01
4,9E-02
1,0E-02
9,8E-04
R (K/W)
0,03
Tau (s)
9,3E+00
7,6E-01
1,5E-01
3,0E-02
4,4E-03
6,5E-04
0,14
0,22
0,51
0,63
0,27
0,37
0,17
0,17
0,07
0,10
copyright Vincotech
8
Revision: 1
V23990-K237-F40-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 21
T1,T2,T3,T4,T5,T6 IGBT
Figure 22
T1,T2,T3,T4,T5,T6 IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
160
120
80
40
30
20
10
0
40
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE
175
°C
175
15
°C
V
=
Figure 23
Power dissipation as a
D1,D2,D3,D4,D5,D6 FWD
Figure 24
Forward current as a
D1,D2,D3,D4,D5,D6 FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
120
90
60
30
0
40
30
20
10
0
T h
(
o C)
T h (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
copyright Vincotech
9
Revision: 1
V23990-K237-F40-PM
T1,T2,T3,T4,T5,T6/D1,D2,D3,D4,D5,D6
Figure 25
T1,T2,T3,T4,T5,T6 IGBT
Figure 26
T1,T2,T3,T4,T5,T6 IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(QGE
16
)
103
100uS
1mS
14
12
10
8
240V
960V
102
101
100
10mS
100mS
DC
6
4
2
0
0
10-1
100
20
40
60
80
100
120
103
101
102
VCE (V)
Q g (nC)
At
At
IC
=
D =
Th =
25
A
single pulse
80
ºC
VGE
Tj =
=
±15
V
Tjmax
ºC
copyright Vincotech
10
Revision: 1
V23990-K237-F40-PM
Thermistor
Figure 1
Thermistor
Typical PTC characteristic
as a function of temperature
RT = f(T)
PTC-typical temperature characteristic
2000
1800
1600
1400
1200
1000
T (°C)
25
50
75
100
125
copyright Vincotech
11
Revision: 1
V23990-K237-F40-PM
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
32 Ω
Rgon
Rgoff
32 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon
)
180
%
130
%
tdoff
IC
110
VCE
150
VGE 90%
90
VCE 90%
120
VCE
70
90
IC
50
VGE
tdon
tEoff
60
30
10
IC 1%
30
IC10%
VCE 3%
VGE10%
VGE
-10
0
tEon
-30
-30
-0,2
-0,05
0,1
0,25
0,4
0,55
0,7
0,85
time (us)
5,9
6
6,1
6,2
6,3
6,4
6,5
6,6
6,7
time(us)
VGE (0%) =
VGE (0%) =
-15
V
V
V
A
-15
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
15
V
600
25
600
25
V
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,30
0,68
µs
µs
0,11
0,42
µs
µs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
140
180
%
%
Ic
120
VCE
150
100
120
VCE
IC
IC 90%
80
60
40
20
0
90
60
30
0
IC90%
IC
60%
tr
IC 40%
IC10%
IC10%
tf
fitted
-20
-30
0,2
0,25
0,3
0,35
0,4
0,45
0,5
0,55
time (us)
6,1
6,2
6,3
6,4
6,5
6,6
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
600
V
600
25
V
25
A
A
0,14
µs
0,03
µs
copyright Vincotech
12
Revision: 1
V23990-K237-F40-PM
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
180
%
Poff
100
%
Pon
Eoff
140
100
60
80
60
40
20
Eon
VGE 10%
20
VCE
3%
0
tEoff
tEon
VGE 90%
IC 1%
-20
-20
5,85
6
6,15
6,3
6,45
6,6
6,75
-0,2
0
0,2
0,4
0,6
0,8
1
time(us)
time (us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
14,95
2,43
0,68
kW
mJ
µs
14,95
2,77
0,42
kW
mJ
µs
tEoff
=
tEon =
Figure 7
Output inverter FWD
Turn-off Switching Waveforms & definition of trr
120
%
Id
80
trr
40
Vd
0
IRRM10%
-40
IRRM90%
IRRM100%
-80
fitted
-120
6
6,2
6,4
6,6
6,8
7
time(us)
Vd (100%) =
Id (100%) =
600
25
V
A
IRRM (100%) =
18
A
trr
=
0,54
µs
copyright Vincotech
13
Revision: 1
V23990-K237-F40-PM
Switching Definitions Output Inverter
Figure 8
Output inverter FWD
Figure 9
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
120
%
Erec
%
Qrr
100
100
Id
80
60
40
20
0
50
tErec
tQrr
0
-50
Prec
-100
-20
6
6,2
6,4
6,6
6,8
7
7,2
6
6,2
6,4
6,6
6,8
7
7,2
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
25
A
14,95
1,44
0,90
kW
mJ
µs
Qrr (100%) =
3,69
0,90
µC
µs
tQrr
=
tErec =
copyright Vincotech
14
Revision: 1
V23990-K237-F40-PM
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
with std lid (black V23990-K22-T-PM)
V23990-K237-F40-/0A/-PM
K237F40
K237F40
K237F40
K237F40
K237F40-/0A/
K237F40-/1A/
K237F40-/0B/
K237F40-/1B/
with std lid (black V23990-K22-T-PM) and P12 V23990-K237-F40-/1A/-PM
with thin lid (white V23990-K23-T-PM) V23990-K237-F40-/0B/-PM
with thin lid (white V23990-K23-T-PM) and P12 V23990-K237-F40-/1B/-PM
Outline
Pinout
copyright Vincotech
15
Revision: 1
V23990-K237-F40-PM
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
16
Revision: 1
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