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V23990-P623-F58-PM [VINCOTECH]

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge;
V23990-P623-F58-PM
型号： V23990-P623-F58-PM
厂家： VINCOTECH    VINCOTECH
描述：

High efficiency in hard switching and resonant topologies;High speed switching;Low gate charge
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中文：  中文翻译
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V23990ꢀP623ꢀF58  
datasheet  
fastPACK 0 H  
650 V / 50 A  
Features  
flow 0 12mm housing  
● High efficient Hꢀbridge  
● Highꢀspeed IGBT  
● Highꢀswitching frequency  
● Low inductive design  
Schematic  
Target applications  
● SMPS  
● Welding  
● UPS  
● Solar  
Types  
● V23990ꢀP623ꢀF58  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
HꢀBridge Switch  
Collectorꢀemitter voltage  
VCES  
I C  
650  
43  
V
A
Collector current  
=
= 80 °C  
Ts  
Tj Tjmax  
Repetitive peak collector current  
Total power dissipation  
Gateꢀemitter voltage  
I CRM  
P tot  
VGES  
Tjmax  
tp limited by T jmax  
Tj = Tjmax  
150  
84  
A
Ts = 80 °C  
W
V
±20  
175  
Maximum Junction Temperature  
°C  
Copyright Vincotech  
1
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
Maximum Ratings  
Tj = 25 °C, unless otherwise specified  
Parameter  
Symbol  
Condition  
Value  
Unit  
HꢀBridge Diode  
Peak Repetitive Reverse Voltage  
Continuous (direct) forward current  
Repetitive peak forward current  
Total power dissipation  
VRRM  
I F  
650  
47  
V
A
Tj = T jmax  
T s = 80°C  
Ts = 80°C  
120  
83  
A
I FRM  
P tot  
Tjmax  
Tj = T jmax  
W
°C  
Maximum Junction Temperature  
Module Properties  
175  
Thermal Properties  
Storage temperature  
T stg  
T jop  
ꢀ40…+125  
°C  
°C  
Operation Junction Temperature  
ꢀ40…+(  
ꢀ 25)  
T jmax  
Isolation Properties  
Isolation voltage  
Visol  
DC voltage  
tp=2s  
4000  
min 12,7  
9,55  
V
Creepage distance  
Clearance  
mm  
mm  
Comparative Tracking Index  
CTI  
>200  
Copyright Vincotech  
2
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
HꢀBridge Switch  
Static  
Gateꢀemitter threshold voltage  
=
0,0005  
50  
25  
3,3  
4
4,7  
V
V
VGE VCE  
V
GE(th)  
25  
1,82  
2,00  
2,22  
Collectorꢀemitter saturation voltage  
Collectorꢀemitter cutꢀoff current  
Gateꢀemitter leakage current  
Internal gate resistance  
Input capacitance  
15  
0
V
CEsat  
125  
650  
0
25  
25  
40  
µA  
nA  
ꢂ
I
CES  
20  
120  
I
GES  
none  
3000  
50  
r g  
C
C
C
ies  
oes  
res  
Output capacitance  
f = 1 MHz  
0
25  
25  
25  
pF  
Reverse transfer capacitance  
Gate charge  
11  
15  
520  
50  
120  
nC  
Q
g
Thermal  
phaseꢀchange  
material  
λ = 3,4 W/mK  
Thermal resistance junction to sink  
1,13  
K/W  
R
th(j-s)  
IGBT Switching  
25  
61  
63  
63  
Turnꢀon delay time  
td(on)  
125  
150  
25  
R goff = 8 ꢂ  
R gon = 8 ꢂ  
9
Rise time  
tr  
125  
150  
25  
10  
11  
66  
ns  
Turnꢀoff delay time  
Fall time  
td(off)  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
78  
80  
5
8
±15  
300  
50  
tf  
9
QrFWD = 0,8 ꢁC  
QrFWD = 1,6 ꢁC  
QrFWD = 1,8 ꢁC  
0,454  
0,569  
0,606  
0,171  
0,302  
0,334  
Turnꢀon energy (per pulse)  
Turnꢀoff energy (per pulse)  
E on  
mWs  
E off  
Copyright Vincotech  
3
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
Characteristic Values  
Parameter  
Symbol  
Conditions  
Value  
Typ  
Unit  
VCE [V] IC [A]  
VGE [V]  
VGS [V]  
VDS [V] ID [A] Tj [°C]  
VF [V] IF [A]  
Min  
Max  
HꢀBridge Diode  
Forward voltage  
25  
1,94  
1,97  
1,95  
2,22  
3,2  
VF  
60  
125  
150  
V
Reverse leakage current  
I r  
650  
25  
µA  
Thermal  
phaseꢀchange  
R th(j-s) material  
λ = 3,4 W/mK  
Thermal resistance junction to sink  
1,15  
K/W  
FWD Switching  
25  
44  
58  
63  
Peak recovery current  
I RRM  
125  
150  
25  
A
ns  
28  
Reverse recovery time  
t rr  
125  
150  
25  
125  
150  
25  
125  
150  
25  
125  
150  
42  
47  
di /dt = 3540 A/ꢁs  
di /dt = 4127 A/ꢁs  
di /dt = 4560 A/ꢁs  
0,776  
1,553  
1,822  
0,084  
0,235  
0,288  
2585  
2673  
2525  
Recovered charge  
Qr  
±15  
300  
50  
ꢁC  
Reverse recovered energy  
Peak rate of fall of recovery current  
E rec  
mWs  
A/µs  
(di rf/dt)max  
Thermistor  
Rated resistance  
Deviation of R 100  
R
ΔR/R  
P
25  
100  
25  
25  
25  
25  
21,5  
kꢂ  
%
R 100 = 1486 ꢂ  
ꢀ4,5  
+4,5  
Power dissipation  
Power dissipation constant  
Bꢀvalue  
210  
3,5  
mW  
mW/K  
K
B(25/50)  
3884  
3964  
Bꢀvalue  
B(25/100)  
K
Vincotech NTC Reference  
F
Copyright Vincotech  
4
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
HꢀBridge Switch Characteristics  
figure 1.  
IGBT  
figure 2.  
IGBT  
Typical output characteristics  
Typical output characteristics  
I C = f(VCE  
)
I C = f(VCE)  
I
I
I
I
I
I
I
I
tp  
=
250  
15  
ꢁs  
V
25 °C  
125 °C  
tp  
Tj  
=
=
250  
125  
ꢁs  
°C  
VGE  
=
Tj:  
VGE from  
8 V to 18 V in steps of 1 V  
figure 3.  
Typical transfer characteristics  
IGBT  
figure 4.  
IGBT  
Transient Thermal Impedance as function of Pulse duration  
I C = f(VGE  
)
Z th(j-s) = f(tp)  
101  
I
I
I
I
Z
Z
Z
Z
100  
10ꢀ1  
10ꢀ2  
10ꢀ3  
10ꢀ5  
10ꢀ4  
10ꢀ3  
10ꢀ2  
10ꢀ1  
100  
101  
102  
tp(s)  
tp  
=
100  
10  
ꢁs  
V
25 °C  
125 °C  
D =  
R th(j-s)  
tp / T  
VCE  
=
Tj:  
=
1,13  
K/W  
IGBT thermal model values  
(K/W)  
R
τ
(s)  
7,12Eꢀ02  
1,29Eꢀ01  
4,31Eꢀ01  
3,15Eꢀ01  
1,31Eꢀ01  
5,02Eꢀ02  
8,15E+00  
6,00Eꢀ01  
9,13Eꢀ02  
2,59Eꢀ02  
5,80Eꢀ03  
8,53Eꢀ04  
Copyright Vincotech  
5
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
HꢀBridge Switch Characteristics  
Gate voltage vs Gate charge  
IGBT  
Safe operating area  
IGBT  
VGE = f(Q G  
)
I C = f(VCE)  
V
V
V
V
I
I
I
I
not for linear use  
At  
At  
D =  
single pulse  
25  
IC=  
50  
A
Tc  
=
ºC  
VGE  
=
15  
V
Tj  
=
Tjmax  
ºC  
Copyright Vincotech  
6
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
HꢀBridge Diode Characteristics  
Typical forward characteristics  
FWD  
Transient thermal impedance as a function of pulse width  
FWD  
IF = f(VF  
)
Z th(j-s) = f(tp)  
100  
Z
Z
Z
Z
10ꢀ1  
D = 0,5  
0,2  
0,1  
0,05  
0,02  
0,01  
0,005  
0.000  
10ꢀ2  
10ꢀ4  
=
10ꢀ3  
10ꢀ2  
10ꢀ1  
100  
101  
102  
D =  
R th(j-s)  
tp  
=
250  
ꢁs  
25 °C  
125 °C  
150 °C  
tp / T  
1,15  
T j:  
K/W  
FWD thermal model values  
R (K/W)  
τ
(s)  
7,96E-02  
1,58E-01  
4,60E-01  
2,26E-01  
1,52E-01  
6,96E-02  
2,71E+00  
4,48E-01  
9,11E-02  
2,44E-02  
5,42E-03  
7,31E-04  
Thermistor Characteristics  
Typical Thermistor resistance values  
Thermistor typical temperature characteristic  
Typical NTC characteristic  
as a function of temperature  
R T = f(T)  
Copyright Vincotech  
7
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
HꢀBridge Switching Characteristics  
Figure 1.  
IGBT  
Figure 2.  
IGBT  
Typical switching energy losses as a function of collector current  
Typical switching energy losses as a function of gate resistor  
E = f(rg)  
E = f(I C  
)
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
300  
±15  
8
V
V
ꢂ
ꢂ
j
:
300  
±15  
50  
V
V
A
VCE  
VGE  
=
=
=
=
T
VCE  
VGE  
I C  
=
=
=
T j:  
R gon  
R goff  
8
Figure 3.  
FWD  
Figure 4.  
FWD  
Typical reverse recovered energy loss as a function of collector current  
Typical reverse recovered energy loss as a function of gate resistor  
Erec = f(I c)  
Erec = f(r g )  
E
E
E
E
E
E
E
E
25 °C  
125 °C  
150 °C  
25 °C  
125 °C  
150 °C  
With an inductive load at  
With an inductive load at  
:
T j  
300  
±15  
8
V
V
ꢂ
:
300  
±15  
50  
V
V
A
VCE  
VGE  
=
=
=
T j  
VCE  
VGE  
I C  
=
=
=
R gon  
Copyright Vincotech  
8
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
HꢀBridge Switching Characteristics  
Figure 5.  
IGBT  
Figure 6.  
IGBT  
Typical switching times as a function of collector current  
Typical switching times as a function of gate resistor  
t = f(I C)  
t = f(r g)  
t
t
t
t
t
t
t
t
With an inductive load at  
With an inductive load at  
150  
300  
±15  
8
°C  
V
150  
300  
±15  
50  
°C  
V
Tj =  
Tj =  
VCE  
=
=
=
=
VCE  
=
=
=
VGE  
R gon  
R goff  
V
VGE  
I C  
V
ꢂ
ꢂ
A
8
Figure 7.  
FWD  
Figure 8.  
FWD  
Typical reverse recovery time as a function of collector current  
Typical reverse recovery time as a function of IGBT turn on gate resistor  
t rr = f(I C  
)
trr = f(R gon  
)
t
t
t
t
t
t
t
t
300  
±15  
8
V
V
ꢂ
25 °C  
125 °C  
150 °C  
300  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE =  
:
:
Tj  
±15  
50  
VGE  
R gon  
=
=
Tj  
VGE  
I C  
=
=
Copyright Vincotech  
9
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
HꢀBridge Switching Characteristics  
Figure 9.  
FWD  
Figure 10.  
FWD  
Typical recovered charge as a function of collector current  
Typical recoved charge as a function of IGBT turn on gate resistor  
Q r = f(I C  
)
Q r = f(R gon)  
Q
Q
Q
Q
Q
Q
Q
Q
300  
±15  
8
V
V
ꢂ
25 °C  
125 °C  
150 °C  
300  
±15  
50  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
VGE  
R gon  
=
At  
VCE  
VGE  
I C  
=
:
:
T j  
=
T j  
=
=
=
Figure 11.  
FWD  
Figure 12.  
FWD  
Typical peak reverse recovery current current as a function of collector current  
Typical peak reverse recovery current as a function of IGBT turn on gate resistor  
I RM = f(I C  
)
I RM = f(R gon  
)
I
I
I I  
I I  
I
I
300  
±15  
8
V
V
ꢂ
25 °C  
125 °C  
150 °C  
300  
±15  
50  
V
V
A
25 °C  
125 °C  
150 °C  
At  
VCE  
=
At  
VCE =  
:
:
T j  
VGE  
=
=
T j  
VGE  
I C  
=
R gon  
=
Copyright Vincotech  
10  
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
HꢀBridge Switching Characteristics  
Figure 13.  
FWD  
Figure 14.  
FWD  
Typical rate of fall of forward and reverse recovery current as a function of collector current  
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor  
di F/dt,di rr/dt = f(I c)  
di F/dt,di rr/dt = f(R g)  
d
iF  
/
d
t
t
t
t
t
d
iF  
/
/dt  
d
t
t
t
t
t
i
i
i
i
dir r/d  
t
i
i
i
i
dirr  
25 °C  
125 °C  
150 °C  
300  
±15  
8
V
V
ꢂ
300  
±15  
50  
V
V
A
At  
VCE  
=
At  
VCE  
VGE  
I C  
=
:
VGE  
=
=
T j  
=
R gon  
=
Figure 15.  
IGBT  
Reverse bias safe operating area  
I C = f(V CE  
)
IC MAX  
I
I
I
I
I
I
I
I
I
I
I
I
V
V
V
V
At  
Tj =  
175  
°C  
ꢂ
8
8
R gon =  
R goff =  
ꢂ
Copyright Vincotech  
11  
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
HꢀBridge Switching Definitions  
General conditions  
=
=
=
125 °C  
8 ꢁ  
T j  
Rgon  
R goff  
8 ꢁ  
Figure 1.  
IGBT  
Figure 2.  
IGBT  
Turnꢀoff Switching Waveforms & definition of tdoff, tEoff (tEoff  
=
integrating time for Eoff)  
Turnꢀon Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)  
IC  
tdoff  
VCE  
VCE  
IC  
VGE  
VGE  
tEoff  
tEon  
ꢀ15  
V
ꢀ15  
V
VGE (0%) =  
GE (100%) =  
VC (100%) =  
C (100%) =  
VGE (0%) =  
15  
V
15  
V
V
A
V
VGE (100%) =  
VC (100%) =  
I C (100%) =  
300  
50  
V
300  
50  
I
A
t doff  
t Eoff  
=
=
0,078  
0,119  
ꢁs  
ꢁs  
tdon  
tEon  
=
=
0,063  
0,133  
ꢁs  
ꢁs  
Figure 3.  
IGBT  
Figure 4.  
IGBT  
Turnꢀoff Switching Waveforms & definition of tf  
Turnꢀon Switching Waveforms & definition of tr  
IC  
VCE  
IC  
VCE  
tr  
tf  
300  
50  
V
300  
50  
V
VC (100%) =  
I C (100%) =  
t f =  
VC (100%) =  
I C (100%) =  
A
A
0,008  
µs  
0,01  
µs  
tr  
=
Copyright Vincotech  
12  
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
HꢀBridge Switching Definitions  
Figure 5.  
IGBT  
Figure 6.  
IGBT  
Turnꢀoff Switching Waveforms & definition of tEoff  
Turnꢀon Switching Waveforms & definition of tEon  
Pon  
Poff  
Eoff  
Eon  
tEoff  
tEon  
P off (100%) =  
Eoff (100%) =  
14,96  
0,30  
kW  
mJ  
ꢁs  
P on (100%) =  
Eon (100%) =  
14,96  
0,57  
kW  
mJ  
ꢁs  
t Eoff  
=
0,119  
tEon  
=
0,133  
Figure 7.  
FWD  
Turnꢀoff Switching Waveforms & definition of trr  
Id  
Vd  
fitted  
300  
50  
V
Vd (100%) =  
I d (100%) =  
A
I
RRM (100%) =  
ꢀ58  
0,042  
A
t rr  
=
ꢁs  
Copyright Vincotech  
13  
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
HꢀBridge Switching Definitions  
Figure 8.  
FWD  
Figure 9.  
FWD  
Turn-on Switching Waveforms & definition of tQrr (tQrr = integrating time for Qrr  
)
Turn-on Switching Waveforms & definition of tErec (tErec= integrating time for Erec)  
Id  
Qrr  
Erec  
tErec  
Prec  
I d (100%) =  
50  
A
P rec (100%) =  
Erec (100%) =  
14,96  
0,24  
kW  
mJ  
ꢁs  
Q rr (100%) =  
1,55  
0,085  
ꢁC  
ꢁs  
t Qrr  
=
tErec  
=
0,085  
Copyright Vincotech  
14  
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
Ordering Code & Marking  
Version  
without thermal paste 12mm housing with solder pins  
with thermal paste 12mm housing with solder pins  
Ordering Code  
V23990ꢀP623ꢀF58  
V23990ꢀP623ꢀF58ꢀ/3/  
Name  
Date code  
WWYY  
UL & VIN  
UL VIN  
Lot  
Serial  
#VALUE!  
Text  
NNꢀNNNNNNNNNNNNNNꢀTTTTTTVV  
LLLLL  
SSSS  
Type&Ver  
Lot number  
Serial  
Date code  
WWYY  
Datamatrix  
TTTTTTTVV  
LLLLL  
SSSS  
Outline  
Pin table [mm]  
Pin  
1
X
Y
Function  
0
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
22,5  
17,8  
15,3  
7,2  
4,7  
0
G11  
S11  
2
2,9  
8,3  
10,8  
19,6  
22,1  
29,1  
32  
3
DCꢀ  
4
DCꢀ  
5
DC+  
DC+  
S12  
6
7
8
G12  
9
33,5  
33,5  
33,5  
33,5  
32  
OUT1  
OUT1  
OUT2  
OUT2  
G14  
10  
11  
12  
13  
14  
15  
16  
17  
18  
19  
20  
21  
22  
29,1  
22,1  
19,6  
10,8  
8,3  
2,9  
0
0
S14  
0
DC+  
DC+  
DCꢀ  
0
0
0
DCꢀ  
0
S13  
0
G13  
0
8
Therm1  
Therm2  
0
14,5  
Copyright Vincotech  
15  
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
Pinout  
Identification  
ID  
Component  
IGBT  
Voltage  
650 V  
Current  
Function  
HꢀBridge Switch  
HꢀBridge Diode  
Thermistor  
Comment  
T11,T12,T13,T14  
D11,D12,D13,D14  
Rt  
50 A  
60 A  
FWD  
650 V  
NTC  
Copyright Vincotech  
16  
16 Jun. 2016 / Revision 1  
V23990ꢀP623ꢀF58  
datasheet  
Packaging instruction  
Handling instruction  
Standard packaging quantity (SPQ) 135  
>SPQ  
Standard  
<SPQ  
Sample  
Handling instructions for flow 0 packages see vincotech.com website.  
Package data  
Package data for flow 0 packages see vincotech.com website.  
UL recognition and file number  
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.  
Document No.:  
Date:  
Modification:  
Pages  
V23990ꢀP623ꢀF58ꢀD1ꢀ14  
16 Jun. 2016  
DISCLAIMER  
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to  
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations  
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,  
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said  
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons  
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine  
the suitability of the information and the product for reader’s intended use.  
LIFE SUPPORT POLICY  
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval  
of Vincotech.  
As used herein:  
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or  
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be  
reasonably expected to result in significant injury to the user.  
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause  
the failure of the life support device or system, or to affect its safety or effectiveness.  
Copyright Vincotech  
17  
16 Jun. 2016 / Revision 1  

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