V23990-P704-F-PM [VINCOTECH]
Low gate charge;Low collector emitter saturation voltage;
| 型号： | V23990-P704-F-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Low gate charge;Low collector emitter saturation voltage 栅 |
| 文件： | 总16页 (文件大小：1725K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990ꢀP704ꢀFꢀPM
datasheet
flow90PACK 1
600 V / 30 A
Features
flow 90 1 housing
● IGBT3 (600 V) technology for low saturation losses
● Supports designs with 90° mounting angle
● Clipꢀin PCB mounting
Schematic
Target applications
● Industrial
Types
● V23990ꢀP704ꢀFꢀPM
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Switch
VCES
IC
Collectorꢀemitter voltage
600
35
V
A
Collector current
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
ICRM
Ptot
VGES
Repetitive peak collector current
Total power dissipation
Gateꢀemitter voltage
tp limited by Tjmax
Tj = Tjmax
90
A
70
W
V
±20
tSC
Tj ≤ 150 °C
VGE = 15 V
6
µs
V
Short circuit ratings
VCC
360
Tjmax
Maximum junction temperature
175
°C
Copyright Vincotech
1
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Maximum Ratings
Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Condition
Value
Unit
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak repetitive reverse voltage
600
34
V
A
Continuous (direct) forward current
Repetitive peak forward current
Total power dissipation
Tj = Tjmax
Ts = 80 °C
Ts = 80 °C
60
A
Tj = Tjmax
50
W
°C
Tjmax
Maximum junction temperature
175
Module Properties
Thermal Properties
Tstg
Tjop
Storage temperature
ꢀ40…+125
°C
°C
Operation temperature under switching condition
Isolation Properties
Isolation voltage
ꢀ40…(Tjmax ꢀ 25)
Visol
DC Test Voltage
tp = 2 s
4000
min. 12,7
11,84
V
Creepage distance
mm
mm
Clearance
Comparative Tracking Index
CTI
> 200
Copyright Vincotech
2
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Switch
Static
VGE(th)
VCEsat
ICES
Gateꢀemitter threshold voltage
Collectorꢀemitter saturation voltage
Collectorꢀemitter cutꢀoff current
Gateꢀemitter leakage current
Internal gate resistance
Input capacitance
VGE = VCE
0,00043 25
5
5,8
6,5
1,9
V
V
25
1,1
1,54
1,71
15
0
30
125
600
0
25
25
1,6
µA
nA
ꢁ
IGES
rg
20
300
none
1630
108
50
Cies
Coes
Cres
Output capacitance
f = 1 MHz
0
25
25
pF
Reverse transfer capacitance
Thermal
phaseꢀchange
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,36
K/W
Dynamic
25
91
95
td(on)
Turnꢀon delay time
Rise time
125
25
17
tr
125
25
19
Rgoff = 16 ꢁ
Rgon = 16 ꢁ
ns
138
159
65
td(off)
Turnꢀoff delay time
Fall time
125
25
±15
300
30
tf
125
83
25
0,372
0,496
0,667
0,823
QrFWD = 1,4 ꢂC
QrFWD = 2,3 ꢂC
Eon
Eoff
Turnꢀon energy (per pulse)
Turnꢀoff energy (per pulse)
125
25
mWs
125
Copyright Vincotech
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30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Characteristic Values
Parameter
Symbol
Conditions
Value
Typ
Unit
VCE [V] IC [A]
VGE [V]
VGS [V]
VDS [V] ID [A] Tj [°C]
VF [V] IF [A]
Min
Max
Inverter Diode
Static
25
1,47
1,44
1,95
27
Forward voltage
Reverse leakage current
Thermal
VF
IR
30
V
125
600
25
µA
phaseꢀchange
material
λ = 3,4 W/mK
Rth(j-s)
Thermal resistance junction to sink
1,88
K/W
Dynamic
25
125
25
125
25
125
25
125
25
125
37
41
67
156
1,429
2,304
0,306
0,509
2170
1769
Peak recovery current
Reverse recovery time
Recovered charge
IRRM
A
trr
Qr
ns
di/dt = 3643 A/ꢂs
di/dt = 2533 A/ꢂs
±15
300
30
ꢂC
Erec
Reverse recovered energy
Peak rate of fall of recovery current
mWs
A/µs
(dirf/dt)max
Thermistor
Rated resistance
R
ΔR/R
P
25
100
25
25
25
25
22
kꢁ
%
Deviation of R100
Power dissipation
Power dissipation constant
Bꢀvalue
R100 = 1484 ꢁ
ꢀ5
5
5
mW
mW/K
K
1,5
B(25/50) Tol. ±1 %
B(25/100) Tol. ±1 %
3962
4000
Bꢀvalue
K
Vincotech NTC Reference
I
Copyright Vincotech
4
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Inverter Switch Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
I C = f(VCE)
VGE
:
I
I
I
I
I
I
I
I
tp
=
250
15
ꢂs
V
25 °C
125 °C
tp
Tj
=
=
250
125
7 V to 17 V in steps of 1 V
ꢂs
Tj:
VGE
=
°C
VGE from
figure 3.
IGBT
figure 4.
IGBT
Typical transfer characteristics
Transient thermal impedance as function of pulse duration
IC = f(VGE
)
Z th(j-s) = f(tp)
101
I
I
I
I
Z
Z
Z
Z
100
10ꢀ1
10ꢀ2
10ꢀ5
10ꢀ4
10ꢀ3
10ꢀ2
10ꢀ1
100
101
tp(s)
102
tp
=
100
10
ꢂs
V
25 °C
125 °C
D =
R th(j-s)
tp / T
Tj:
VCE
=
=
1,36
K/W
IGBT thermal model values
(K/W)
R
τ
(s)
6,35Eꢀ02
1,66Eꢀ01
1,09E+00
2,16Eꢀ01
9,88Eꢀ02
7,00Eꢀ02
3,01E+00
4,76Eꢀ01
7,92Eꢀ02
1,94Eꢀ02
4,23Eꢀ03
5,06Eꢀ04
Copyright Vincotech
5
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Inverter Diode Characteristics
figure 1.
FWD
figure 2.
FWD
Typical forward characteristics
Transient thermal impedance as a function of pulse width
IF = f(VF)
Z th(j-s) = f(tp)
100
Z
Z
Z
Z
10ꢀ1
10ꢀ2
10ꢀ4
=
10ꢀ3
10ꢀ2
10ꢀ1
100
101
102
tp
=
250
ꢂs
25 °C
125 °C
D =
R th(j-s)
tp / T
1,88
Tj:
K/W
FWD thermal model values
R (K/W)
τ
(s)
9,10Eꢀ02
3,45Eꢀ01
7,17Eꢀ01
2,97Eꢀ01
1,15Eꢀ01
2,00E+00
1,68Eꢀ01
4,13Eꢀ02
7,43Eꢀ03
1,80Eꢀ03
Thermistor Characteristics
Typical Thermistor resistance values
Thermistor typical temperature characteristic
Typical NTC characteristic
as a function of temperature
R T = f(T)
Copyright Vincotech
6
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Inverter Switching Characteristics
figure 1.
IGBT
figure 2.
IGBT
Typical switching energy losses as a function of collector current
Typical switching energy losses as a function of gate resistor
E = f(R g)
E = f(I C
)
E
E
E
E
E
E
E
E
25 °C
125 °C
25 °C
125 °C
With an inductive load at
With an inductive load at
300
±15
16
V
V
ꢁ
ꢁ
T
j
:
VCE
VGE
I C
=
=
=
300
±15
30
V
V
A
Tj:
VCE
VGE
=
=
=
=
R gon
R goff
16
figure 3.
FWD
figure 4.
FWD
Typical reverse recovered energy loss as a function of collector current
Typical reverse recovered energy loss as a function of gate resistor
Erec = f(I c)
Erec = f(R g)
E
E
E
E
E
E
E
E
25 °C
125 °C
25 °C
125 °C
With an inductive load at
With an inductive load at
300
±15
16
V
V
ꢁ
:
300
±15
30
V
V
A
:
Tj
VCE
VGE
=
=
=
Tj
VCE
VGE
I C
=
=
=
R gon
Copyright Vincotech
7
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Inverter Switching Characteristics
figure 5.
IGBT
figure 6.
IGBT
Typical switching times as a function of collector current
Typical switching times as a function of gate resistor
t = f(I C)
t = f(R g)
t
t
t
t
t
t
t
t
With an inductive load at
With an inductive load at
125
300
±15
16
°C
V
125
300
±15
30
°C
V
Tj =
Tj =
VCE
=
=
=
=
VCE
=
=
=
VGE
R gon
R goff
V
VGE
I C
V
ꢁ
ꢁ
A
16
figure 7.
FWD
figure 8.
FWD
Typical reverse recovery time as a function of collector current
Typical reverse recovery time as a function of IGBT turn on gate resistor
t rr = f(I C
)
trr = f(R gon
)
t
t
t
t
t
t
t
t
300
300
At
VCE
=
V
V
ꢁ
25 °C
125 °C
At
VCE
=
V
V
A
25 °C
125 °C
±15
16
:
Tj
VGE
I C
=
±15
30
:
Tj
VGE
R gon
=
=
=
Copyright Vincotech
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30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Inverter Switching Characteristics
figure 9.
FWD
figure 10.
FWD
Typical recovered charge as a function of collector current
Typical recoved charge as a function of IGBT turn on gate resistor
Q r = f(I C
)
Q r = f(R gon)
Q
Q
Q
Q
Q
Q
Q
Q
300
300
V
V
ꢁ
25 °C
125 °C
V
V
A
25 °C
125 °C
At
VCE
VGE
R gon
=
At
VCE
VGE
I C
=
±15
16
:
Tj
=
±15
30
:
Tj
=
=
=
figure 11.
FWD
figure 12.
FWD
Typical peak reverse recovery current current as a function of collector current
Typical peak reverse recovery current as a function of IGBT turn on gate resistor
I RM = f(I C
)
I RM = f(R gon
)
I
I
I I
I I
I
I
300
At
VCE
=
V
V
ꢁ
25 °C
125 °C
At
VCE
=
300
±15
30
V
V
A
25 °C
125 °C
±15
16
:
Tj
:
Tj
VGE
=
=
VGE
I C
=
R gon
=
Copyright Vincotech
9
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Inverter Switching Characteristics
figure 13.
FWD
figure 14.
FWD
Typical rate of fall of forward and reverse recovery current as a function of collector current
Typical rate of fall of forward and reverse recovery current as a function of IGBT turn on gate resistor
di F/dt,di rr/dt = f(I c)
di F/dt,di rr/dt = f(R g)
diF/dt
dirr/dt
d
iF
/
/
dt
dt
t
t
t
t
t
t
t
t
i
i
i
i
dirr
i
i
i
i
At
VCE
=
300
±15
16
V
V
ꢁ
25 °C
125 °C
At
VCE
VGE
I C
=
300
±15
30
V
25 °C
125 °C
:
Tj
V
A
:
Tj
VGE
=
=
=
R gon
=
figure 15.
IGBT
Reverse bias safe operating area
I C = f(V CE
)
I
I
I
IC MAX
I
I
I
I
I
I
I
I
I
V
V
V
V
At
Tj =
175
°C
ꢁ
R gon
R goff
=
=
16
16
ꢁ
Copyright Vincotech
10
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Inverter Switching Definitions
General conditions
=
=
=
125 °C
8 ꢁ
T j
Rgon
R goff
8 ꢁ
figure 1.
IGBT
figure 2.
IGBT
Turnꢀoff Switching Waveforms & definition of tdoff, tEoff (tEoff = integrating time for Eoff)
Turnꢀon Switching Waveforms & definition of tdon, tEon (tEon = integrating time for Eon)
IC
tdoff
VCE
IC
VCE
VGE
tEoff
VGE
tEon
ꢀ15
VGE (0%) =
ꢀ15
15
V
VGE (0%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
V
VGE (100%) =
VC (100%) =
I C (100%) =
15
V
300
30
V
300
30
V
A
A
0,133
0,471
ꢂs
ꢂs
0,058
0,152
ꢂs
ꢂs
t doff
t Eoff
=
=
tdon
tEon
=
=
figure 3.
IGBT
figure 4.
IGBT
Turnꢀoff Switching Waveforms & definition of tf
Turnꢀon Switching Waveforms & definition of tr
IC
VCE
IC
VCE
tr
tf
300
300
V
V
VC (100%) =
VC (100%) =
I C (100%) =
30
A
30
A
I
C (100%) =
0,114
µs
0,012
µs
t f =
tr
=
Copyright Vincotech
11
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Inverter Switching Definitions
figure 5.
IGBT
figure 6.
IGBT
Turnꢀoff Switching Waveforms & definition of tEoff
Turnꢀon Switching Waveforms & definition of tEon
Eon
Eoff
Pon
Poff
tEon
tEoff
P off (100%) =
Eoff (100%) =
8,97
0,87
0,47
kW
mJ
ꢂs
P on (100%) =
Eon (100%) =
8,97
0,24
0,15
kW
mJ
ꢂs
t Eoff
=
tEon =
figure 7.
FWD
Turnꢀoff Switching Waveforms & definition of trr
IF
fitted
VF
VF (100%) =
I F (100%) =
I RRM (100%) =
300
30
V
A
59
A
0,071
ꢂs
t rr
=
Copyright Vincotech
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30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Inverter Switching Definitions
figure 8.
FWD
figure 9.
FWD
Turnꢀon Switching Waveforms & definition of tQr (tQr = integrating time for Qr
)
Turnꢀon Switching Waveforms & definition of tErec (tErec
=
integrating time for Erec
)
IF
Qr
Prec
Erec
tErec
30
A
8,97
0,62
0,30
kW
mJ
ꢂs
I F (100%) =
Q r (100%) =
P rec (100%) =
Erec (100%) =
2,38
0,30
ꢂC
ꢂs
t Qr
=
tErec =
Copyright Vincotech
13
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Ordering Code & Marking
Version
without thermal paste housing with solder pins
with thermal paste housing with solder pins
Ordering Code
V23990ꢀP704ꢀFꢀPM
V23990ꢀP704ꢀFꢀ/3/ꢀPM
VIN
VIN
Date code
WWYY
Name&Ver
NNNNNNNVV
Serial
UL
UL
Lot
Serial
VIN WWYY
NNNNNNNVV UL
LLLLL SSSS
Text
LLLLL
SSSS
Type&Ver
TTTTTTTVV
Lot number
LLLLL
Date code
WWYY
Datamatrix
SSSS
Outline
Pin table [mm]
Pin
X
Y
Function
1
53
50
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
7
7
7
7
7
7
7
7
7
7
7
7
U+
U+
G6
S6
Uꢀ
Uꢀ
Uꢀ
Uꢀ
S5
G5
G4
S4
Uꢀ
Uꢀ
N2
N1
G1
S1
U
2
3
43
4
40
5
37
6
34,1
31
7
8
28,1
24,05
21,05
17
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
12,95
8,9
6
3
0
0
3
7,2
10,2
17,2
20,2
29,75
32,75
39,75
42,75
47
U
G2
S2
V
V
G3
S3
W
50
W
Copyright Vincotech
14
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Pinout
Identification
ID
Component
IGBT
Voltage
600 V
Current
Function
Inverter Switch
Inverter Diode
Thermistor
Comment
T1ꢀT6
D1ꢀD6
NTC
30 A
30 A
FWD
600 V
Thermistor
Copyright Vincotech
15
30 Jun. 2016 / Revision 2
V23990ꢀP704ꢀFꢀPM
datasheet
Packaging instruction
Handling instruction
Standard packaging quantity (SPQ) 80
>SPQ
Standard
<SPQ
Sample
Handling instructions for flow 90 1 packages see vincotech.com website.
Package data
Package data for flow 90 1 packages see vincotech.com website.
UL recognition and file number
This device is certified according to UL 1557 standard, UL file number E192116. For more information see vincotech.com website.
Document No.:
Date:
Modification:
Pages
V23990ꢀP704ꢀFꢀD2ꢀ14
30 Jun. 2016
DISCLAIMER
The information, specifications, procedures, methods and recommendations herein (together “information”) are presented by Vincotech to
reader in good faith, are believed to be accurate and reliable, but may well be incomplete and/or not applicable to all conditions or situations
that may exist or occur. Vincotech reserves the right to make any changes without further notice to any products to improve reliability,
function or design. No representation, guarantee or warranty is made to reader as to the accuracy, reliability or completeness of said
information or that the application or use of any of the same will avoid hazards, accidents, losses, damages or injury of any kind to persons
or property or that the same will not infringe third parties rights or give desired results. It is reader’s sole responsibility to test and determine
the suitability of the information and the product for reader’s intended use.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written approval
of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause
the failure of the life support device or system, or to affect its safety or effectiveness.
Copyright Vincotech
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30 Jun. 2016 / Revision 2
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