V23990-P825-F10-PM [VINCOTECH]
Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current;
| 型号： | V23990-P825-F10-PM |
| 厂家： | 
VINCOTECH |
| 描述： | Easy paralleling;Low turn-off losses;Low collector emitter saturation voltage;Positive temperature coefficient;Short tail current |
| 文件： | 总17页 (文件大小：609K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
V23990-P825-F10-PM
datasheet
flow PACK 1 3rd gen
600 V / 100 A
Features
flow 1 housing
● Compact flow1 housing
● Compact and Low Inductance Design
● Built-in NTC
Target Applications
Schematic
● Motor Drive
● Power Generation
● UPS
Types
● V23990-P825-F10-PM
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Inverter Transistor
Collector-emitter break down voltage
DC collector current
VCE
IC
ICpulse
Ptot
600
70
V
A
Th=80°C
Tj=Tjmax
Tc=80°C
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
300
107
tp limited by Tjmax
Tj=Tjmax
Repetitive peak collector current
Power dissipation
A
W
V
VGE
Gate-emitter peak voltage
Short circuit ratings
±20
tSC
Tj≤150°C
6
µs
V
VCC
VGE=15V
360
Tjmax
Maximum Junction Temperature
175
°C
Inverter Diode
VRRM
IF
IFRM
Ptot
Peak Repetitive Reverse Voltage
DC forward current
600
59
V
A
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Th=80°C
Tc=80°C
Tj=Tjmax
300
72
tp limited by Tjmax
Tj=Tjmax
Repetitive peak forward current
Power dissipation
A
W
°C
Tjmax
Maximum Junction Temperature
175
Thermal Properties
Tstg
Top
Storage temperature
-40…+125
-40…+150
°C
°C
Operation temperature under switching condition
copyright Vincotech
1
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Maximum Ratings
Tj=25°C, unless otherwise specified
Condition
Parameter
Symbol
Value
Unit
Insulation Properties
Insulation voltage
Creepage distance
Clearance
Vis
VDC
mm
mm
t=1min
4000
min 12,7
min 12,7
copyright Vincotech
2
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Characteristic Values
Conditions
Value
Typ
Parameter
Symbol
Unit
Vr [V] or
VGE [V] or
IC [A] or
IF [A] or
ID [A]
VCE [V] or
Tj
Min
Max
VGS [V]
VDS [V]
Inverter Transistor
Gate emitter threshold voltage
Collector-emitter saturation voltage
Collector-emitter cut-off current incl. Diode
Gate-emitter leakage current
Integrated Gate resistor
Turn-on delay time
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
5
5,8
6,5
2,25
0,66
650
VGE(th)
VCE(sat)
ICES
IGES
Rgint
td(on)
tr
VCE=VGE
0,0016
100
V
V
1,1
1,54
1,76
15
0
600
0
mA
nA
ꢀ
20
2
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
151
157
19
Rise time
25
ns
205
232
89
101
1,34
2,00
2,35
3,11
td(off)
tf
Turn-off delay time
Rgoff=4 ꢀ
Rgon=4 ꢀ
±15
300
100
Fall time
Eon
Turn-on energy loss per pulse
Turn-off energy loss per pulse
Input capacitance
mWs
pF
Eoff
Cies
Coss
Crss
QGate
6160
384
183
625
Output capacitance
f=1MHz
0
25
Tj=25°C
Tj=25°C
Reverse transfer capacitance
Gate charge
Vcc=480V
±15
100
nC
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink
0,89
K/W
Inverter Diode
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
Tj=25°C
Tj=150°C
1,2
1,65
1,53
97
117
140
2,4
VF
IRRM
trr
Diode forward voltage
100
100
V
A
Peak reverse recovery current
Reverse recovery time
ns
292
4,87
10,01
6149
3433
1,03
2,25
Qrr
Reverse recovered charge
Peak rate of fall of recovery current
Reverse recovered energy
Rgon=4 ꢀ
±15
300
nC
di(rec)max
/dt
A/µs
mWs
Erec
Thermal grease
thickness≤50um
λ = 1 W/mK
RthJH
Thermal resistance chip to heatsink
1,31
K/W
Thermistor
R
∆R/R
P
kΩ
%
Rated resistance
Deviation of R100
Power dissipation
Power dissipation constant
B-value
Tj=25º
C
4,7
R100=401 ꢀ
Tj=100º
C
-12,4
12,4
mW
mW/K
K
Tj=25º
Tj=25º
Tj=25º
Tj=25º
C
210
3,5
C
C
C
B(25/50)
3590
3650
K
B-value
B(25/100)
Vincotech NTC Reference
D
copyright Vincotech
3
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Output Inverter
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Typical output characteristics
Typical output characteristics
IC = f(VCE
)
IC = f(VCE)
300
300
250
200
150
100
50
250
200
150
100
50
0
0
0
0
VCE (V)
VCE (V)
1
2
3
4
5
1
2
3
4
5
At
At
tp =
Tj =
tp =
Tj =
250
25
ꢁs
250
150
ꢁs
°C
°C
VGE from 7 V to 17 V in steps of 1 V
VGE from 7 V to 17 V in steps of 1 V
Figure 3
Output inverter IGBT
Figure 4
Output inverter FWD
Typical transfer characteristics
Typical diode forward current as
a function of forward voltage
IF = f(VF)
Ic = f(VGE
)
100
300
250
80
60
40
20
Tj = Tjmax-25°C
200
150
100
50
Tj = Tjmax-25°C
Tj = 25°C
Tj = 25°C
0
0
0
VF (V)
VGE (V)
2
4
6
8
10
0
0,5
1
1,5
2
2,5
3
At
At
tp =
tp =
250
10
ꢁs
250
ꢁs
VCE
=
V
copyright Vincotech
4
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Typical switching energy losses
as a function of collector current
E = f(Ic)
Typical switching energy losses
as a function of gate resistor
E = f(RG)
6
5
4
3
2
1
0
6
5
4
3
2
1
0
Eon
Eoff
Eon
Eoff
Eoff
Eon
Eoff
Eon:
R G ( Ω )
I C (A)
0
40
80
120
160
200
0
4
8
12
16
20
With an inductive load at
With an inductive load at
Tj =
Tj =
°C
V
°C
V
V
A
25/150
25/150
VCE
VGE
=
=
VCE
VGE
IC =
=
=
300
±15
4
300
±15
100
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
4
Figure 7
Output inverter IGBT
Figure 8
Output inverter IGBT
Typical reverse recovery energy loss
as a function of collector current
Erec = f(Ic)
Typical reverse recovery energy loss
as a function of gate resistor
Erec = f(RG)
3,5
3,5
Erec
3
3
2,5
2
2,5
2
Erec
1,5
1
1,5
1
Erec
Erec
0,5
0
0,5
0
R G ( Ω )
I C (A)
0
40
80
120
160
200
0
4
8
12
16
20
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
25/150
300
±15
4
°C
V
25/150
300
°C
V
V
A
=
=
=
=
V
±15
Rgon
=
ꢀ
100
copyright Vincotech
5
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Output Inverter
Figure 9
Output inverter IGBT
Figure 10
Output inverter IGBT
Typical switching times as a
function of collector current
t = f(IC)
Typical switching times as a
function of gate resistor
t = f(RG)
1
1
tdoff
tdon
tdoff
tdon
0,1
0,1
tf
tf
tr
tr
0,01
0,01
0,001
0,001
R
G ( Ω )
I C (A)
0
40
80
120
160
200
0
4
8
12
16
20
With an inductive load at
With an inductive load at
Tj =
VCE
VGE
Tj =
VCE
VGE
IC =
150
300
±15
4
°C
V
150
300
±15
100
°C
V
V
A
=
=
=
=
V
Rgon
Rgoff
=
=
ꢀ
ꢀ
4
Figure 11
Output inverter FWD
Figure 12
Output inverter FWD
Typical reverse recovery time as a
function of collector current
trr = f(Ic)
Typical reverse recovery time as a
function of IGBT turn on gate resistor
trr = f(Rgon
)
0,4
0,3
0,2
0,1
0
0,4
trr
trr
trr
0,3
0,2
0,1
trr
0
0
I C (A)
R Gon ( Ω )
20
0
40
80
120
160
200
4
8
12
16
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
300
±15
4
°C
V
25/150
300
°C
V
A
V
=
=
V
100
Rgon
=
VGE =
ꢀ
±15
copyright Vincotech
6
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Output Inverter
Figure 13
Output inverter FWD
Figure 14
Output inverter FWD
Typical reverse recovery charge as a
function of collector current
Qrr = f(Ic)
Typical reverse recovery charge as a
function of IGBT turn on gate resistor
Qrr = f(Rgon
)
15
12
9
15
Qrr
12
9
Qrr
Qrr
6
6
Qrr
3
3
0
0
0
I C (A)
R Gon ( Ω)
0
40
80
120
160
200
4
8
12
16
20
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
300
±15
4
°C
V
25/150
300
°C
V
A
V
=
=
V
100
Rgon
=
VGE =
ꢀ
±15
Figure 15
Output inverter FWD
Figure 16
Output inverter FWD
Typical reverse recovery current as a
function of collector current
IRRM = f(Ic)
Typical reverse recovery current as a
function of IGBT turn on gate resistor
IRRM = f(Rgon
)
200
160
120
80
200
160
120
80
IRRM
IRRM
IRRM
IRRM
40
40
0
0
0
I C (A)
R Gon ( Ω )
0
40
80
120
160
200
4
8
12
16
20
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
300
±15
4
°C
V
25/150
300
°C
V
A
V
=
=
V
100
Rgon
=
VGE =
ꢀ
±15
copyright Vincotech
7
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Output Inverter
Figure 17
Output inverter FWD
Figure 18
Output inverter FWD
Typical rate of fall of forward
and reverse recovery current as a
function of collector current
dI0/dt,dIrec/dt = f(Ic)
Typical rate of fall of forward
and reverse recovery current as a
function of IGBT turn on gate resistor
dI0/dt,dIrec/dt = f(Rgon
)
8000
6000
4000
2000
0
12000
dI0/dt
dI0/dt
dIrec/dt
dIrec/dt
10000
8000
6000
4000
2000
0
0
I C (A)
R Gon ( Ω)
20
0
40
80
120
160
200
4
8
12
16
At
At
Tj =
VCE
VGE
Tj =
VR =
IF =
25/150
300
±15
4
°C
V
25/150
300
°C
V
A
V
=
=
V
100
Rgon
=
VGE =
ꢀ
±15
Figure 19
Output inverter IGBT
Figure 20
Output inverter FWD
IGBT transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
FWD transient thermal impedance
as a function of pulse width
ZthJH = f(tp)
101
101
100
100
D = 0,5
0,2
D = 0,5
0,2
10-1
10-1
0,1
0,1
0,05
0,02
0,01
0,005
0.000
0,05
0,02
0,01
0,005
0.000
10-2
10-5
10-2
t p (s)
t p (s)
10-4
10-3
10-2
10-1
100
1012
10-5
10-4
10-3
10-2
10-1
100
1012
At
At
D =
RthJH
tp / T
0,89
D =
tp / T
1,31
=
RthJH =
K/W
K/W
IGBT thermal model values
FWD thermal model values
R (K/W)
0,03
Tau (s)
R (K/W)
0,02
Tau (s)
9,9E+00
1,1E+00
1,9E-01
3,2E-02
4,7E-03
3,9E-04
9,9E+00
1,2E+00
1,8E-01
4,7E-02
8,1E-03
5,3E-04
0,15
0,15
0,51
0,59
0,14
0,35
0,03
0,13
0,03
0,07
copyright Vincotech
8
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Output Inverter
Figure 21
Output inverter IGBT
Figure 22
Output inverter IGBT
Power dissipation as a
function of heatsink temperature
Ptot = f(Th)
Collector current as a
function of heatsink temperature
IC = f(Th)
200
160
120
80
125
100
75
50
25
0
40
0
Th
(
o C)
Th (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
VGE =
175
°C
175
15
°C
V
Figure 23
Power dissipation as a
Output inverter FWD
Figure 24
Forward current as a
Output inverter FWD
function of heatsink temperature
function of heatsink temperature
Ptot = f(Th)
IF = f(Th)
160
120
80
100
75
50
25
0
40
0
Th
(
o C)
Th (
o C)
0
50
100
150
200
0
50
100
150
200
At
At
Tj =
Tj =
175
°C
175
°C
copyright Vincotech
9
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Output Inverter
Figure 25
Output inverter IGBT
Figure 26
Output inverter IGBT
Gate voltage vs Gate charge
Safe operating area as a function
of collector-emitter voltage
IC = f(VCE
)
VGE = f(Qg)
20
103
10u
100u
1m
102
101
100
15
10
5
10m
100m
DC
120V
480V
0
10-1
100
0
100
200
300
400
500
600
700
Qg (nC)
101
102
VCE (V)
103
At
At
IC
=
D =
Th =
100
A
single pulse
80
ºC
VGE
Tj =
=
±15
V
Tjmax
ºC
Figure 27
Output inverter IGBT
Figure 28
Output inverter IGBT
Short circuit withstand time as a function of
gate-emitter voltage
Typical short circuit collector current as a function of
gate-emitter voltage
tsc = f(VGE
)
VGE = f(QGE
)
12
1750
11
10
9
1500
1250
1000
750
8
7
6
5
4
500
3
2
250
1
0
0
10
10,5
11
11,5
12
12,5
13
13,5
14
14,5
VGE (V)
15
12
13
14
15
16
17
18
19
20
GE (V)
V
At
At
VCE
=
VCE ≤
600
150
V
400
150
V
Tj ≤
Tj ≤
ºC
ºC
copyright Vincotech
10
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Figure 29
IGBT
Reverse bias safe operating area
IC = f(VCE
220
)
200
180
160
140
120
100
80
IC MAX
60
40
20
0
0
100
200
ºC
300
400
500
600
700
VCE (V)
At
Tj =
Tjmax-25
3phase SPWM
Switching mode :
copyright Vincotech
11
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Thermistor
Figure 1
Thermistor
Typical NTC characteristic
as a function of temperature
RT = f(T)
NTC-typical temperature characteristic
5000
4000
3000
2000
1000
0
T (°C)
25
50
75
100
125
copyright Vincotech
12
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Switching Definitions Output Inverter
General conditions
Tj
=
=
=
150 °C
4 Ω
Rgon
Rgoff
4 Ω
Figure 1
Output inverter IGBT
Figure 2
Output inverter IGBT
Turn-off Switching Waveforms & definition of tdoff, tEoff
Turn-on Switching Waveforms & definition of tdon, tEon
(tEoff = integrating time for Eoff
)
(tEon = integrating time for Eon)
280
140
tdoff
Ic
120
240
200
Uce
100
Uce 90%
Uge 90%
80
160
Ic
60
%
Uce
120
%
tEoff
40
20
0
80
tdon
Uge
Ic 1%
40
Ic10%
Uge
0,4
Uce3%
Uge10%
-20
0
tEon
3,1
-40
-40
-0,2
0
0,2
0,6
0,8
2,8
2,95
3,25
3,4
3,55
time (us)
time(us)
VGE (0%) =
VGE (0%) =
-15
15
V
-15
15
V
VGE (100%) =
VC (100%) =
IC (100%) =
VGE (100%) =
VC (100%) =
IC (100%) =
V
V
300
99
V
300
99
V
A
A
tdoff
tEoff
=
=
tdon
tEon
=
=
0,23
0,51
ꢁs
ꢁs
0,16
0,32
ꢁs
ꢁs
Figure 3
Output inverter IGBT
Figure 4
Output inverter IGBT
Turn-off Switching Waveforms & definition of tf
Turn-on Switching Waveforms & definition of tr
140
260
fitted
120
Uce
220
180
100
Ic
Ic 90%
80
140
%
Ic 60%
%
60
Ic90%
100
Uce
Ic 40%
40
20
0
tr
60
Ic10%
20
tf
Ic10%
Ic
-20
-20
0,15
0,2
0,25
0,3
0,35
0,4
2,9
3
3,1
3,2
3,3
3,4
time (us)
time(us)
VC (100%) =
IC (100%) =
tf =
VC (100%) =
IC (100%) =
tr =
300
99
V
300
99
V
A
A
0,10
ꢁs
0,03
ꢁs
copyright Vincotech
13
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Switching Definitions Output Inverter
Figure 5
Output inverter IGBT
Figure 6
Output inverter IGBT
Turn-off Switching Waveforms & definition of tEoff
Turn-on Switching Waveforms & definition of tEon
120
130
Eoff
Poff
Pon
Eon
100
100
80
70
60
%
%
40
40
20
Uge10%
Uce3%
10
0
Uge90%
tEon
Ic 1%
tEoff
-20
-20
2,95
3,05
3,15
3,25
3,35
3,45
-0,2
0
0,2
0,4
0,6
0,8
time (us)
time(us)
Poff (100%) =
Eoff (100%) =
Pon (100%) =
Eon (100%) =
29,79
kW
mJ
ꢁs
29,79
kW
mJ
ꢁs
3,11
0,51
2,00
0,32
tEoff
=
tEon =
Figure 7
Output inverter FWD
Figure 8
Output inverter IGBT
Gate voltage vs Gate charge (measured)
Turn-off Switching Waveforms & definition of trr
20
120
Id
15
10
5
80
trr
40
0
Ud
%
0
IRRM10%
-40
fitted
-5
-80
-120
-160
-10
-15
-20
IRRM90%
IRRM100%
-150
50
250
450
650
850
1050
3,08
3,18
3,28
3,38
3,48
3,58
Qg (nC)
time(us)
VGEoff
VGEon
=
=
Vd (100%) =
Id (100%) =
-15
V
300
99
V
15
V
A
VC (100%) =
IC (100%) =
Qg =
IRRM (100%) =
300
99
V
-117
0,29
A
trr
=
A
ꢁs
979,79
nC
copyright Vincotech
14
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Switching Definitions Output Inverter
Figure 9
Output inverter FWD
Figure 10
Output inverter FWD
Turn-on Switching Waveforms & definition of tQrr
(tQrr = integrating time for Qrr)
Turn-on Switching Waveforms & definition of tErec
(tErec= integrating time for Erec
)
150
120
Erec
Id
Qrr
100
80
100
50
tQint
tErec
60
%
0
%
40
20
0
-50
-100
-150
Prec
-20
2,9
3,15
3,4
3,65
3,9
4,15
2,9
3,15
3,4
3,65
3,9
4,15
time(us)
time(us)
Id (100%) =
Prec (100%) =
Erec (100%) =
99
A
29,79
2,25
0,60
kW
mJ
ꢁs
Qrr (100%) =
10,01
0,60
ꢁC
ꢁs
tQint
=
tErec =
copyright Vincotech
15
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
Ordering Code and Marking - Outline - Pinout
Ordering Code & Marking
Version
Ordering Code
in DataMatrix as
in packaging barcode as
V23990-P825-F10-PM
without thermal paste 17mm housing
P825-F10
P825-F10
Outline
Pin table
Pin
X
Y
1
52,6
49,9
42,65
39,65
35,15
28,4
24
0
0
2
3
0
4
0
5
2,8
0
6
7
2,8
0
8
21
9
12,2
9,2
0
10
11
12
13
14
15
16
17
18
0
2,7
0
0
0
0
14,65
14,65
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
28,6
2,7
0
2,7
5,4
9,6
19 12,6
20 19,6
21 22,3
22
25
23 29,7
24 32,7
25 39,7
26 42,7
27 42,2
28 49,9
29 52,6
30 52,6
31 49,9
14,56
14,56
Pinout
copyright Vincotech
16
19 Nov 2014 / Revision: 3
V23990-P825-F10-PM
datasheet
DISCLAIMER
The information given in this datasheet describes the type of component and does not represent assured characteristics. For tested
values please contact Vincotech.Vincotech reserves the right to make changes without further notice to any products herein to improve
reliability, function or design. Vincotech does not assume any liability arising out of the application or use of any product or circuit
described herein; neither does it convey any license under its patent rights, nor the rights of others.
LIFE SUPPORT POLICY
Vincotech products are not authorised for use as critical components in life support devices or systems without the express written
approval of Vincotech.
As used herein:
1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or
sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in labelling can be
reasonably expected to result in significant injury to the user.
2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to
cause the failure of the life support device or system, or to affect its safety or effectiveness.
copyright Vincotech
17
19 Nov 2014 / Revision: 3
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