1N5822 [VISHAY]
SCHOTTKY BARRIER RECTIFIER; 肖特基势垒整流器
| 型号： | 1N5822 |
| 厂家： | 
VISHAY |
| 描述： | SCHOTTKY BARRIER RECTIFIER |
| 文件： | 总2页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
1N5820 THRU 1N5822
SCHOTTKY BARRIER RECTIFIER
Reverse Voltage - 20 to 40 Volts
Forward Current - 3.0 Amperes
FEATURES
♦ Plastic package has Underwriters Laboratory
Flammability Classification 94V-0
DO-201AD
♦ Metal silicon junction, majority carrier conduction
♦ Low power loss, high efficiency
♦ High current capability, low forward voltage drop
♦ High surge capability
1.0 (25.4)
MIN.
♦ Guardring for overvoltage protection
♦ For use in low voltage, high frequency inverters,
free wheeling, and polarity protection applications
♦ High temperature soldering guaranteed:
250°C/10 seconds, 0.375" (9.5mm) lead length,
5 lbs. (2.3 kg) tension
0.210 (5.3)
0.190 (4.8)
DIA.
0.375 (9.5)
0.285 (7.2)
0.052 (1.32)
1.0 (25.4)
MIN.
MECHANICAL DATA
Case: JEDEC DO-201AD molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
0.048 (1.22)
DIA.
Polarity: Color band denotes cathode end
Mounting Position: Any
Dimensions in inches and (millimeters)
Weight: 0.04 ounce, 1.12 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25°C ambient temperature unless otherwise specified.
SYMBOLS
VRRM
VRMS
VDC
1N5820
20
1N5821
30
1N5822
40
UNITS
Volts
Volts
Volts
Volts
* Maximum repetitive peak reverse voltage
Maximum RMS voltage
14
21
28
* Maximum DC blocking voltage
* Non-repetitive peak reverse voltage
20
30
40
VRSM
24
36
48
* Maximum average forward rectified current
0.375" (9.5mm) lead length at TL=95°C
I(AV)
3.0
Amps
Amps
* Peak forward surge current, 8.3ms single
half sine-wave superimposed on rated load
(JEDEC Method) at TL=75°C
IFSM
80.0
* Maximum instantaneous forward voltage at 3.0 (NOTE 1)
* Maximum instantaneous forward voltage at 9.4 (NOTE 1)
VF
VF
0.475
0.850
0.500
0.900
0.525
0.950
Volts
Volts
* Maximum average reverse current at rated
DC blocking voltage (NOTE 1)
TA=25°C
IR
2.0
mA
TA=100°C
20.0
Typical thermal resistance (NOTE 2)
RΘJA
RΘJL
40.0
10.0
°C/W
°C
* Storage and operating junction temperature range
TJ, TSTG
-65 to +125
*JEDEC registered values
NOTES:
(1) Pulse test: 300µs pulse width, 1% duty cycle
(2) Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5” (63.5 x 63.5mm)
copper pad
4/98
RATINGS AND CHARACTERISTIC CURVES 1N5820 THRU 1N5822
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
FIG. 1 - FORWARD CURRENT DERATING CURVE
80
70
4
3
2
1
0
T =T max.
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
J
J
RESISTIVE OR
INDUCTIVE LOAD
0.375" (9.5mm) LEAD LENGTH
60
50
40
30
20
10
0
20
40
60
80
100
120
140
LEAD TEMPERATURE, °C
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
50
10
10
PULSE WIDTH=300µs
1% DUTY CYCLE
T =125°C
J
T
= 125°C
J
1
1
T =75°C
J
T =25°C
J
0.1
0.1
T =25°C
J
0.01
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0.001
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
1,000
100
10
100
T =25°C
J
f=1.0 MHz
Vsig=50mVp-p
10
1
0.1
0.1
1
10
100
0
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
t, PULSE DURATION, sec.
相关型号：
1N5822-B
Rectifier Diode, Schottky, 1 Phase, 1 Element, 3A, 40V V(RRM), Silicon, DO-201AD, ROHS COMPLIANT, PLASTIC PACKAGE-2
RECTRON
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