40TPS12APBF [VISHAY]
Phase Control SCR, 35 A; 相位控制可控硅，一个35
| 型号： | 40TPS12APBF |
| 厂家： | 
VISHAY |
| 描述： | Phase Control SCR, 35 A |
| 文件： | 总7页 (文件大小：149K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
40TPS...APbF/40TPS...PbF High Voltage Series
Vishay High Power Products
Phase Control SCR, 35 A
DESCRIPTION/FEATURES
2
The 40TPS...APbF High Voltage Series of silicon
controlled rectifiers are specifically designed for
medium power switching and phase control
applications. The glass passivation technology
(A)
Pb-free
Available
RoHS*
COMPLIANT
used has reliable operation up to 125 °C junction
temperature. Low Igt parts available.
1 (K)
(G) 3
TO-247AC
Typical applications are in input rectification (soft start) and
these products are designed to be used with Vishay HPP
input diodes, switches and output rectifiers which are
available in identical package outlines.
PRODUCT SUMMARY
VT at 40 A
< 1.45 V
500 A
ITSM
This product has been designed and qualified for industrial
level and lead (Pb)-free (“PbF” suffix).
VRRM
800/1200 V
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER
TEST CONDITIONS
VALUES
35
UNITS
IT(AV)
Sinusoidal waveform
A
IRMS
55
VRRM/VDRM
ITSM
800/1200
500
V
A
VT
40 A, TJ = 25 °C
1.45
V
dV/dt
1000
V/µs
A/µs
°C
dI/dt
100
TJ
- 40 to 125
VOLTAGE RATINGS
V
RRM/VDRM, MAXIMUM
VRSM, MAXIMUM
NON-REPETITIVE PEAK
REVERSE VOLTAGE
V
I
RRM/IDRM
REPETITIVE PEAK AND
OFF-STATE VOLTAGE
V
PART NUMBER
AT 125 °C
mA
40TPS08APbF
40TPS12APbF
40TPS08PbF
40TPS12PbF
800
1200
800
900
1300
900
10
1200
1300
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94388
Revision: 12-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
1
40TPS...APbF/40TPS...PbF High Voltage Series
Phase Control SCR, 35 A
Vishay High Power Products
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES UNITS
Maximum average on-state current
IT(AV)
TC = 79 °C, 180° conduction half sine wave
35
Maximum continuous RMS
on-state current as AC switch
IT(RMS)
55
A
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
500
600
Maximum peak, one-cycle
non-repetitive surge current
ITSM
Initial TJ =
TJ maximum
10 ms sine pulse, rated VRRM applied
10 ms sine pulse, no voltage reapplied
t = 0.1 to 10 ms, no voltage reapplied
1250
A2s
Maximum I2t for fusing
I2t
1760
Maximum I2√t for fusing
I2√t
VT(TO)1
VT(TO)2
rt1
12 500
1.02
1.23
9.74
7.50
1.85
100
A2√s
Low level value of threshold voltage
High level value of threshold voltage
Low level value of on-state slope resistance
High level value of on-state slope resistance
Maximum peak on-state voltage
Maximum rate of rise of turned-on current
Maximum holding current
V
TJ = 125 °C
mΩ
rt2
VTM
dI/dt
IH
110 A, TJ = 25 °C
TJ = 25 °C
V
A/µs
150
Maximum latching current
IL
300
mA
TJ = 25 °C
0.5
Maximum reverse and direct leakage current
IRRM/ DRM
I
VR = Rated VRRM/VDRM
TJ = 125 °C
10
Maximum rate of rise of off-state voltage 40TPS08
Maximum rate of rise of off-state voltage 40TPS12
500
dV/dt
TJ = TJ maximum, linear to 80 % VDRM, Rg-k = Open
V/µs
1000
TRIGGERING
PARAMETER
SYMBOL
PGM
TEST CONDITIONS
VALUES UNITS
Maximum peak gate power
Maximum average gate power
Maximum peak gate current
Maximum peak negative gate voltage
10
W
PG(AV)
IGM
2.5
2.5
10
A
V
- VGM
TJ = - 40 °C
4.0
2.5
1.7
270
150
80
Maximum required DC gate
voltage to trigger
Anode supply = 6 V
resistive load
VGT
TJ = 25 °C
V
TJ = 125 °C
TJ = - 40 °C
TJ = 25 °C
Maximum required DC gate current to trigger
IGT
mA
TJ = 125 °C
TJ = 25 °C, for 40TPS08APbF and 40TPS12APbF
TJ = 125 °C, VDRM = Rated value
40
Maximum DC gate voltage not to trigger
Maximum DC gate current not to trigger
VGD
IGD
0.25
6
V
mA
www.vishay.com
2
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94388
Revision: 12-Sep-08
40TPS...APbF/40TPS...PbF High Voltage Series
Phase Control SCR, 35 A
Vishay High Power Products
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum junction and storage
temperature range
TJ, TStg
- 40 to 125
°C
Maximum thermal resistance,
junction to case
RthJC
RthJA
RthCS
0.6
40
DC operation
Maximum thermal resistance,
junction to ambient
°C/W
Maximum thermal resistance,
case to heatsink
Mounting surface, smooth and greased
0.2
6
g
Approximate weight
Mounting torque
0.21
oz.
minimum
maximum
6 (5)
12 (10)
kgf · cm
(lbf · in)
40TPS08A
40TPS12A
40TPS08
40TPS12
Marking device
Case style TO-247AC
Document Number: 94388
Revision: 12-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
3
40TPS...APbF/40TPS...PbF High Voltage Series
Phase Control SCR, 35 A
Vishay High Power Products
130
120
110
100
90
80
70
60
50
40
30
20
10
0
40TPS.. Series
thJC
DC
180°
120°
90°
R
(DC) = 0.6 °C/W
60°
30°
Conduction Angle
RMS Lim it
30°
60°
90°
20
Conduction Period
40TPS.. Se ri e s
120°
180°
80
T = 125°C
J
70
0
10
Average On-state Current (A)
Fig. 4 - On-State Power Loss Characteristics
20
30
40
50
60
0
10
30
40
Average On-state Current (A)
Fig. 1 - Current Rating Characteristics
130
120
110
100
90
550
40TPS.. Series
At Any Rated Load Condition And With
R
(DC) = 0.6 °C/W
Rated V
Applied Following Surge.
RRM
thJC
Initial T = 125°C
J
500
450
400
350
300
250
@ 60 Hz 0. 0083 s
@ 50 Hz 0. 0100 s
Conduction Period
30°
10
60°
90°
120°
30
180°
80
4 0 TPS. . Se rie s
DC
50
70
0
20
40
60
1
10
100
NumberOf Equal Amplitude Half Cycle Current Pulses(N)
Average On-state Current (A)
Fig. 2 - Current Rating Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
60
50
40
30
20
10
0
600
Maximum Non Repetitive Surge Current
180°
120°
90°
Versus Pulse Train Duration. Control
550
Of Conduction May Not Be Maintained.
Initial T = 125°C
J
60°
500
450
400
350
300
250
No Voltage Reapplied
30°
RMS Lim it
Ra t e d V
Re a p p lie d
RRM
Conduction Angle
40TPS.. Series
40TPS.. Series
T = 125° C
J
0
5
10 15 20 25 30 35 40
0.01
0.1
Pulse Tra in Dura tion (s)
Fig. 6 - Maximum Non-Repetitive Surge Current
1
Average On-state Current (A)
Fig. 3 - On-State Power Loss Characteristics
www.vishay.com
4
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94388
Revision: 12-Sep-08
40TPS...APbF/40TPS...PbF High Voltage Series
Phase Control SCR, 35 A
Vishay High Power Products
100
10
T = 25° C
J
T = 125°C
J
40TPS. . Se rie s
1.5
1
0.5
1
2
InstantaneousOn-state Voltage (V)
Fig. 7 - On-State Voltage Drop Characteristics
100
10
1
Rectangular gate pulse
(1) PGM = 100 W, tp = 500µs
(2) PGM = 50 W, tp = 1 ms
(3) PGM = 20 W, tp = 25 ms
(4) PGM = 10 W, tp = 5 ms
a)Recommended load line for
rated di/dt: 20 V, 30 ohms
tr = 0.5 µs, tp >= 6 µs
b)Recommended load line for
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(a)
(b)
(2)
(3)
(1)
(4)
VGD
IGD
Frequency Limited by PG(AV)
40TPS..A Series
0.1
0.001
0.01
0.1
1
10
100
1000
InstantaneousGateCurrent(A)
Fig. 8 - Gate Characteristics
1
St e a d y St a t e V a l u e
(DC Operation)
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
0.1
Si n g l e Pu lse
40TPS.. Series
0.01
0.0001
0.001
0.01
0.1
1
Sq u a r e W a v e Pu l se D u r a t i o n ( s)
Fig. 9 - Thermal Impedance ZthJC Characteristics
Document Number: 94388
Revision: 12-Sep-08
For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
5
40TPS...APbF/40TPS...PbF High Voltage Series
Phase Control SCR, 35 A
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
40
T
P
S
12
A
PbF
1
2
3
4
5
6
7
1
2
-
-
Current rating (40 = 40 A)
Circuit configuration:
T = Thyristor
3
4
-
-
Package:
P = TO-247
Type of silicon:
S = Standard recovery rectifier
Voltage ratings
08 = 800 V
12 = 1200 V
5
6
-
-
A = Low Igt selection 40 mA maximum
None = Standard Igt selection
None = Standard production
PbF = Lead (Pb)-free
7
-
LINKS TO RELATED DOCUMENTS
Dimensions
http://www.vishay.com/doc?95223
http://www.vishay.com/doc?95226
Part marking information
www.vishay.com
6
For technical questions, contact: diodes-tech@vishay.com
Document Number: 94388
Revision: 12-Sep-08
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
©2020 ICPDF网 联系我们和版权申明