BAV103 [VISHAY]
Small Signal Diodes; 小信号二极管
| 型号： | BAV103 |
| 厂家： | 
VISHAY |
| 描述： | Small Signal Diodes |
| 文件： | 总4页 (文件大小：146K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BAV100 THRU BAV103
Small Signal Diodes
FEATURES
MiniMELF
♦ Silicon Epitaxial Planar Diodes
For general purpose
♦
♦
Cathode Mark
These diodes are also available in other
case styles including: the DO-35 case with
the type designations BAV19 to BAV21, the SOD-123
case with the type designations BAV19W to BAV21W,
and the SOT-23 case with the type designation
BAS19 - BAS21.
.019 (0.48)
.011 (0.28)
.142 (3.6)
.134 (3.4)
MECHANICAL DATA
Dimensions in inches and (millimeters)
Case: MiniMELF Glass Case (SOD-80)
Weight: approx. 0.05 g
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Value
Unit
Reverse Voltage
BAV100
BAV101
BAV102
BAV103
V
R
V
R
V
R
V
R
60
V
V
V
V
120
200
250
Forward DC Current at T
= 25 °C
I
2501)
2001)
mA
mA
amb
F
0
Rectified Current (Average)
Half Wave Rectification with Resist. Load
≥ 50 Hz
I
at T
= 25 °C and f
amb
Repetitive Peak Forward Current
≥ 50 Hz, Θ = 180 °C, T = 25 °C
I
I
6251)
mA
FRM
at f
amb
Surge Forward Current at t < 1 s, T = 25 °C
1
A
j
FSM
Power Dissipation at T
= 25 °C
P
4001)
mW
°C
°C
amb
tot
Junction Temperature
T
T
175
j
Storage Temperature Range
–65 to +175
S
1) Valid provided that electrodes are kept at ambient temperature.
4/98
BAV100 THRU BAV103
ELECTRICAL CHARACTERISTICS
Ratings at
ambient temperature unless otherwise specified
25 °C
Symbol
Min.
–
Typ.
–
Max.
1
Unit
V
Forward voltage at I = 100 mA
V
F
F
Leakage Current
at V = 50 V
BAV100
BAV100
BAV101
BAV101
BAV102
BAV102
BAV103
BAV103
I
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
15
100
15
100
15
nA
µ
A
nA
R
R
at V = 50 V, T = 100 °C
I
I
I
I
I
I
I
R
j
R
at V = 100 V
R
R
R
R
R
R
R
at V = 100 V, T = 100 °C
µ
A
R
j
at V = 150 V
nA
R
at V = 150 V, T = 100 °C
µ
A
R
j
at V = 200 V
100
15
nA
R
at V = 200 V, T = 100 °C
µ
A
R
j
Ω
Dynamic Forward Resistance
r
–
–
–
5
–
f
at I = 10 mA
F
Capacitance
C
1.5
–
–
pF
ns
tot
at V = 0, f = 1 MHz
R
Reverse Recovery Time
t
rr
50
from I = 30 mA through I = 30 mA to
F
R
Ω
I = 3 mA; R = 100
R
L
Thermal Resistance
Junction to Ambient Air
R
–
–
0.3751)
K/mW
thJA
1) Valid provided that electrodes are kept at ambient temperature.
RATINGS AND CHARACTERISTIC CURVES BAV100 THRU BAV103
RATINGS AND CHARACTERISTIC CURVES BAV100 THRU BAV103
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