BF998 [VISHAY]
N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode; N沟道双栅MOS -场效应四极管，耗尽型
| 型号： | BF998 |
| 厂家： | 
VISHAY |
| 描述： | N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode |
| 文件： | 总9页 (文件大小：158K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BF998/BF998R/BF998RW
Vishay Telefunken
N–Channel Dual Gate MOS-Fieldeffect Tetrode,
Depletion Mode
Electrostatic sensitive device.
Observe precautions for handling.
Applications
Input and mixer stages in UHF tuners.
Features
Integrated gate protection diodes
Low noise figure
Low input capacitance
High AGC-range
High gain
Low feedback capacitance
High cross modulation performance
2
1
1
2
13 579
94 9279
94 9278
95 10831
4
3
3
4
BF998 Marking: MO
Plastic case (SOT 143)
BF998R Marking: MOR
Plastic case (SOT 143R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
1
2
13 654
13 566
4
3
BF998RW Marking: WMO
Plastic case (SOT 343R)
1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1
Document Number 85011
Rev. 4, 23-Jun-99
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1 (9)
BF998/BF998R/BF998RW
Vishay Telefunken
Absolute Maximum Ratings
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source voltage
Test Conditions
Symbol
Value
12
Unit
V
V
DS
Drain current
I
30
10
7
200
150
mA
mA
V
mW
C
D
Gate 1/Gate 2 - source peak current
Gate 1/Gate 2 - source voltage
Total power dissipation
Channel temperature
±I
±V
G1/G2SM
G1S/G2S
T
amb
≤ 60 C
P
tot
T
Ch
Storage temperature range
T
stg
–65 to +150
C
Maximum Thermal Resistance
T
amb
= 25 C, unless otherwise specified
Parameter
Test Conditions
Symbol
R
thChA
Value
450
Unit
K/W
3
Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm
plated with 35 m Cu
Electrical DC Characteristics
T
amb
= 25 C, unless otherwise specified
Parameter
Drain - source
breakdown voltage –V
Test Conditions
I = 10 A,
Type
Symbol
Min Typ Max Unit
V
12
V
D
(BR)DS
= –V
= 4 V
G1S
G2S
Gate 1 - source
breakdown voltage
Gate 2 - source
breakdown voltage
Gate 1 - source
leakage current
Gate 2 - source
leakage current
±I
V
= 10 mA,
±V
±V
7
14
14
50
50
V
G1S
G2S
(BR)G1SS
(BR)G2SS
= V = 0
DS
±I
= 10 mA,
7
V
G2S
G1S
V
= V = 0
DS
±V
= 5 V,
±I
±I
I
nA
nA
G1S
G1SS
G2SS
DSS
V
G2S
= V = 0
DS
±V
= 5 V,
G2S
V
G1S
= V = 0
DS
Drain current
V
V
= 8 V, V
= 0,
BF998/BF998R/
BF998RW
BF998A/BF998RA/
BF998RAW
BF998B/BF998RB/
BF998RBW
4
4
18 mA
10.5 mA
18 mA
DS
G1S
= 4 V
G2S
I
DSS
I
9.5
DSS
Gate 1 - source
cut-off voltage
Gate 2 - source
cut-off voltage
V
= 8 V, V
= 4 V,
= 0,
–V
–V
1.0 2.0
0.6 1.0
V
V
DS
G2S
G1S
G1S(OFF)
G2S(OFF)
I = 20 A
D
V
DS
= 8 V, V
I = 20 A
D
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Document Number 85011
Rev. 4, 23-Jun-99
2 (9)
BF998/BF998R/BF998RW
Vishay Telefunken
Electrical AC Characteristics
V
DS
= 8 V, I = 10 mA, V
= 4 V, f = 1 MHz , T = 25 C, unless otherwise specified
amb
D
G2S
Parameter
Test Conditions
Symbol
Min
21
Typ Max Unit
Forward transadmittance
Gate 1 input capacitance
Gate 2 input capacitance
Feedback capacitance
Output capacitance
Power gain
y
21s
24
2.1
1.1
25
mS
pF
pF
fF
C
issg1
C
issg2
2.5
V
= 0, V
= 4 V
G2S
G1S
C
rss
C
oss
1.05
28
20
pF
dB
dB
dB
dB
dB
G = 2 mS, G = 0.5 mS, f = 200 MHz
G
ps
G
ps
S
L
G = 3,3 mS, G = 1 mS, f = 800 MHz
16.5
40
S
L
AGC range
Noise figure
V
G2S
= 4 to –2 V, f = 800 MHz
G
ps
F
F
G = 2 mS, G = 0.5 mS, f = 200 MHz
1.0
1.5
S
L
G = 3,3 mS, G = 1 mS, f = 800 MHz
S
L
Document Number 85011
Rev. 4, 23-Jun-99
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BF998/BF998R/BF998RW
Vishay Telefunken
Typical Characteristics (Tamb = 25 C unless otherwise specified)
300
4V
20
3V
2V
5V
V
=8V
DS
250
200
150
100
50
16
12
8
1V
0
4
V
=–1V
G1S
0
0
0
20 40 60 80 100 120 140 160
– Ambient Temperature ( °C )
–0.6
–0.2
0.2
0.6
1.0
1.4
96 12159
T
amb
12817
V
– Gate 2 Source Voltage ( V )
G2S
Figure 1. Total Power Dissipation vs.
Ambient Temperature
Figure 4. Drain Current vs. Gate 2 Source Voltage
30
25
20
15
10
5
3.0
V
=0.6V
G1S
V
=8V
=4V
V
=4V
DS
G2S
2.5
2.0
1.5
1.0
0.5
0
V
G2S
f=1MHz
0.4V
0.2V
0
–0.2V
–0.4V
0
0
2
4
6
8
10
–2 –1.5 –1.0 –0.5 0.0 0.5 1.0 1.5
– Gate 1 Source Voltage ( V )
12812
V
– Drain Source Voltage ( V )
12863
V
G1S
DS
Figure 2. Drain Current vs. Drain Source Voltage
Figure 5. Gate 1 Input Capacitance vs.
Gate 1 Source Voltage
20
3.0
2.5
2.0
1.5
1.0
0.5
0
3V
2V
V
=8V
6V
5V
4V
DS
V
=4V
G2S
16
12
8
f=1MHz
1V
0
=–1V
4
V
G2S
0
–0.8
–0.4
0.0
0.4
0.8
1.2
2
4
6
8
10
12
12816
V
– Gate 1 Source Voltage ( V )
12864
V
DS
– Drain Source Voltage ( V )
G1S
Figure 3. Drain Current vs. Gate 1 Source Voltage
Figure 6. Output Capacitance vs. Drain Source Voltage
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Document Number 85011
Rev. 4, 23-Jun-99
4 (9)
BF998/BF998R/BF998RW
Vishay Telefunken
10
0
5
4V
3V
V
=8V
=4V
f=800MHz
DS
f=100MHz
0
–5
V
G2S
2V
f=100...1300MHz
1V
–10
–20
–30
–40
–50
–10
–15
–20
–25
–30
–35
–40
I =5mA
D
0
10mA
400MHz
700MHz
–0.2V
20mA
–0.4V
1000MHz
V
=–0.8V
G2S
1300MHz
–1
–0.5
0.0
0.5
1.0
1.5
0
4
8
12 16 20 24 28 32
Re (y ( mS )
12818
V
– Gate 1 Source Voltage ( V )
12821
)
21
G1S
Figure 10. Short Circuit Forward Transfer Admittance
Figure 7. Transducer Gain vs. Gate 1 Source Voltage
9
32
V
=8V
V
=4V
3V
DS
G2S
f=1300MHz
8
7
6
5
4
3
2
1
0
28
24
20
16
12
8
f=1MHz
1000MHz
700MHz
2V
V
V
=15V
400MHz
DS
=4V
G2S
I =10mA
D
1V
4
100MHz
f=100...1300MHz
0
4
0
0
0
0.25 0.50 0.75 1.00 1.25 1.50
Re (y ( mS )
8
12
16
20
24
28
12822
)
12819
I
– Drain Current ( mA )
22
D
Figure 11. Short Circuit Output Admittance
Figure 8. Forward Transadmittance vs. Drain Current
20
f=1300MHz
18
16
14
1000MHz
12
10
700MHz
8
V
=8V
=4V
DS
6
4
2
0
400MHz
V
G2S
I =10mA
D
f=100...1300MHz
100MHz
0
2
4
6
8
10
12
14
12820
Re (y
)
( mS )
11
Figure 9. Short Circuit Input Admittance
Document Number 85011
Rev. 4, 23-Jun-99
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5 (9)
BF998/BF998R/BF998RW
Vishay Telefunken
VDS = 8 V, ID = 10 mA, VG2S = 4 V , Z0 = 50
S11
S12
j
90°
120°
60°
j0.5
j2
150°
30°
j0.2
j5
1200
1300MHz
200
100
0
0.2
0.5
1
2
5
180°
0.08
0.16
0°
100
–j0.2
–j5
1300MHz
1000
–150°
–30°
–j0.5
–j2
–120°
–60°
12 960
–j
–90°
12 973
Figure 12. Input reflection coefficient
Figure 14. Reverse transmission coefficient
S21
S22
j
90°
120°
60°
700
j0.5
j2
1000
400
150°
30°
j0.2
j5
1300MHz
1
100
180°
2
0°
0
0.2
0.5
1
2
5
100
–j0.2
–j5
–150°
–30°
1300MHz
–j0.5
–j2
–120°
–60°
12 963
–j
–90°
12 962
Figure 13. Forward transmission coefficient
Figure 15. Output reflection coefficient
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Document Number 85011
Rev. 4, 23-Jun-99
6 (9)
BF998/BF998R/BF998RW
Vishay Telefunken
Dimensions of BF998 in mm
96 12240
Dimensions of BF998R in mm
96 12239
Document Number 85011
Rev. 4, 23-Jun-99
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7 (9)
BF998/BF998R/BF998RW
Vishay Telefunken
Dimensions of BF998RW in mm
96 12238
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Document Number 85011
Rev. 4, 23-Jun-99
8 (9)
BF998/BF998R/BF998RW
Vishay Telefunken
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and operating
systems with respect to their impact on the health and safety of our employees and the public, as well as their
impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as
ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban
on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of
ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each customer application
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 85011
Rev. 4, 23-Jun-99
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