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BF998 [VISHAY]

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode; N沟道双栅MOS -场效应四极管，耗尽型

BF998


元器件型号：	BF998
生产厂家：	VISHAY TELEFUNKEN
描述和应用：	N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode N沟道双栅MOS -场效应四极管，耗尽型晶体晶体管功率场效应晶体管栅
PDF文件：	总10页 (文件大小：319K)
下载文档：	下载PDF数据表文档文件
型号参数：BF998参数

BF998,215

N-channel dual-gate MOSFET SOT-143 4-Pin

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6 PHILIPS

BF998,235

N-channel dual-gate MOSFET SOT-143 4-Pin

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2 PHILIPS

BF998/T1

TRANSISTOR MOSFET

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142 ETC

BF998_07

Silicon N_Channel MOSFET Tetrode

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21 INFINEON

BF998_08

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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46 VISHAY

BF998_15

Silicon N-channel dual-gate

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0 JMNIC

BF998_2015

Silicon N-channel dual-gate MOS-FETs

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0 JMNIC

BF998A

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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25 VISHAY

BF998A

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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44 VISHAY

BF998A

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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52 VISHAY

BF998A

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

BF998A

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

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4 TEMIC

BF998A-GS08

N-Channel Dual Gate MOS-Fieldeffect Tetrode, Depletion Mode

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38 VISHAY

BF998A-GS08

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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0 VISHAY

BF998A-GS18

RF Small Signal Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, PLASTIC PACKAGE-4

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0 VISHAY

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