BYT62 [VISHAY]

Silicon Mesa Rectifier; 硅梅萨整流器
BYT62
型号: BYT62
厂家: VISHAY    VISHAY
描述:

Silicon Mesa Rectifier
硅梅萨整流器

整流二极管
文件: 总3页 (文件大小:40K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
BYT62  
Vishay Telefunken  
Silicon Mesa Rectifier  
Features  
Glass passivated junction  
Hermetically sealed package  
Controlled avalanche characteristic  
Low reverse current  
Applications  
94 9539  
High voltage rectifier  
Absolute Maximum Ratings  
T = 25 C  
j
Parameter  
Reverse voltage  
Test Conditions  
Type  
Symbol  
Value  
2400  
Unit  
V
V
R
=Repetitive peak reverse voltage  
=V  
RRM  
Peak forward surge current  
Average forward current  
t =10ms, half sinewave  
I
I
10  
350  
60  
A
mA  
mJ  
p
FSM  
T
amb  
=25 C, R  
60K/W  
FAV  
thJA  
Non repetitive reverse  
avalanche energy  
I
=1A, inductive load  
E
R
(BR)R  
Junction temperature  
Storage temperature range  
T
T
stg  
175  
–55...+190  
C
C
j
Maximum Thermal Resistance  
T = 25 C  
j
Parameter  
Junction ambient  
Test Conditions  
Symbol  
R
thJA  
Value  
60  
Unit  
K/W  
l=10mm, T =constant  
L
Electrical Characteristics  
T = 25 C  
j
Parameter  
Test Conditions  
Type  
Symbol Min  
Typ Max Unit  
Forward voltage  
I =200mA  
V
V
V
V
3.0  
3.6  
2.9  
4.0  
5
V
V
V
V
F
F
F
F
F
I =1A  
F
I =1A, T =175 C  
F
j
I =1A, T =–40 C  
F
j
Reverse current  
V =V  
I
I
I
A
R
RRM  
RRM  
RRM  
R
V =V  
, T =175 C  
, T =–40 C  
j
250  
400  
A
nA  
V
R
j
R
R
V =V  
R
Reverse breakdown voltage I =100 A  
V
2500  
R
(BR)R  
Reverse recovery time  
I =0.5A, I =1A, i =0.25A  
t
rr  
5
s
F
R
R
Document Number 86033  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
1 (3)  
BYT62  
Vishay Telefunken  
Characteristics (Tj = 25 C unless otherwise specified)  
600  
500  
400  
300  
200  
100  
0
10  
T =+175°C  
j
1
R
=30K/W  
thJA  
T =+25°C  
j
0.1  
R
thJA  
=60K/W  
T =40°C  
j
0.01  
0.001  
V =V  
R
R RM  
200  
7
0
40  
80  
120  
160  
0
1
2
3
4
5
6
95 9725  
T – Junction Temperature ( °C )  
j
95 9727  
V – Forward Voltage ( V )  
F
Figure 3. Max. Forward Current vs. Forward Voltage  
Figure 1. Max. Reverse Power Dissipation vs.  
Junction Temperature  
1000  
V =V  
R
R RM  
100  
10  
1
0.1  
200  
0
40  
80  
120  
160  
95 9726  
T – Junction Temperature ( °C )  
j
Figure 2. Max. Reverse Current vs.  
Junction Temperature  
Dimensions in mm  
3.6 max.  
94 9538  
Sintered Glass Case  
SOD 57  
Weight max. 0.5g  
Cathode Identification  
technical drawings  
according to DIN  
specifications  
0.82 max.  
26 min.  
26 min.  
4.2 max.  
www.vishay.de FaxBack +1-408-970-5600  
Document Number 86033  
Rev. 2, 24-Jun-98  
2 (3)  
BYT62  
Vishay Telefunken  
Ozone Depleting Substances Policy Statement  
It is the policy of Vishay Semiconductor GmbH to  
1. Meet all present and future national and international statutory requirements.  
2. Regularly and continuously improve the performance of our products, processes, distribution and operating  
systems  
with respect to their impact on the health and safety of our employees and the public, as well as their impact on  
the environment.  
It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as  
ozone depleting substances (ODSs).  
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and  
forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban  
on these substances.  
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of  
ODSs listed in the following documents.  
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively  
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental  
Protection Agency (EPA) in the USA  
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.  
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting  
substances and do not contain such substances.  
We reserve the right to make changes to improve technical design and may do so without further notice.  
Parameters can vary in different applications. All operating parameters must be validated for each customer application  
by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the  
buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or  
indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.  
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany  
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423  
Document Number 86033  
Rev. 2, 24-Jun-98  
www.vishay.de FaxBack +1-408-970-5600  
3 (3)  

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