EDF1AM-E3/45 [VISHAY]
Diode Rectifier Bridge Single 50V 1A 4-Pin Case DFM T/R;
| 型号： | EDF1AM-E3/45 |
| 厂家： | 
VISHAY |
| 描述： | Diode Rectifier Bridge Single 50V 1A 4-Pin Case DFM T/R 光电二极管 |
| 文件： | 总4页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EDF1AM, EDF1BM, EDF1CM, EDF1DM
www.vishay.com
Vishay General Semiconductor
Miniature Glass Passivated Ultrafast Bridge Rectifier
FEATURES
• UL recognition, file number E54214
• Ideal for printed circuit boards
• Ultrafast reverse recovery time for high
frequency
• Applicable for automative insertion
~
• High surge current capability
~
• Solder dip 275 °C max. 10 s, per JESD 22-B106
~
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
~
General purpose use in AC/DC bridge full wave rectification
for SMPS, lighting ballaster, adapter, battery charger, home
appliances, office equipment, and telecommunication
applications.
Case Style DFM
PRIMARY CHARACTERISTICS
Package
DFM
1 A
MECHANICAL DATA
IF(AV)
Case: DFM
VRRM
50 V, 100 V, 150 V, 200 V
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
IFSM
IR
50 A
5 μA
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
VF at IF = 1.0 A
trr
1.05 V
50 ns
150 °C
Quad
TJ max.
Polarity: As marked on body
Diode variations
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EDF1AM
EDF1BM EDF1CM EDF1DM
UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
106
150
200
140
200
V
V
V
A
Maximum DC blocking voltage
100
Maximum average forward output rectified current at TA = 40 °C
IF(AV)
1.0
50
10
Peak forward surge current single sine-wave superimposed on
rated load
IFSM
A
Rating for fusing (t < 8.3 ms)
I2t
A2s
°C
Operating junction and storage temperature range
TJ, TSTG
- 55 to + 150
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
SYMBOL
EDF1AM
EDF1BM EDF1CM EDF1DM
UNIT
Maximum instantaneous forward
voltage drop per diode
1.0 A
VF
1.05
V
TA = 25 °C
5.0
1.0
μA
Maximum reverse current at rated DC
blocking voltage per diode
IR
trr
TA = 125 °C
mA
Maximum reverse recovery time per
diode
IF = 0.5 A, IR = 1.0 A,
50
ns
Irr = 0.25 A
Revision: 16-Aug-13
Document Number: 88577
1
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EDF1AM, EDF1BM, EDF1CM, EDF1DM
www.vishay.com
Vishay General Semiconductor
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
EDF1AM
EDF1BM
EDF1CM
EDF1DM
UNIT
RJA
38
12
(1)
Typical thermal resistance
°C/W
RJL
Note
(1)
Thermal resistance from junction to ambient and from junction to lead mounted on PCB with 0.5" x 0.5" (13 mm x 13 mm) copper pads
ORDERING INFORMATION (Example)
PREFERRED P/N
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
EDF1DM-E3/45
0.418
45
50
Tube
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
1.0
0.75
0.5
10
60 Hz Resistive
or Inductive Load
P.C.B. Mounted on
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
1
Capacitive
Loads
IPK/IAV = 5.0
IPK/IAV = 10
0.1
0.01
0.25
0
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
IPK/IAV = 20
20
40
60
80
100
120
140
160
0.6
0.8
1.0
1.2
1.4
0.4
Ambient Temperature (°C)
Instantaneous Forward Voltage (V)
Fig. 1 - Derating Curves Output Rectified Current
Fig. 3 - Typical Forward Characteristics Per Diode
60
1000
TJ = 150 °C
Single Sine-Wave
50
40
30
20
10
0
100
10
1
TJ = 125 °C
TJ = 25 °C
1.0 Cycle
10
0.1
0
20
80
40
60
100
1
100
Percent of Rated Peak Reverse Voltage (%)
Number of Cycles at 60 Hz
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
Current Per Diode
Revision: 16-Aug-13
Document Number: 88577
2
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EDF1AM, EDF1BM, EDF1CM, EDF1DM
www.vishay.com
Vishay General Semiconductor
30
25
20
15
10
5
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0
0.1
1
10
Reverse Voltage (V)
100
1000
Fig. 5 - Typical Junction Capacitance Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style DFM
0.255 (6.5)
0.245 (6.2)
0.315 (8.00)
0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.080 (2.03)
0.050 (1.27)
0.130 (3.30)
0.120 (3.05)
0.045 (1.14)
0.035 (0.89)
0.013 (0.33)
0.0086 (0.22)
0.185 (4.69)
0.150 (3.81)
0.023 (0.58)
0.018 (0.46)
0.350 (8.9)
0.300 (7.6)
0.205 (5.2)
0.195 (5.0)
0.075 (1.90)
0.055 (1.39)
Revision: 16-Aug-13
Document Number: 88577
3
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17
Document Number: 91000
1
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