EDF1AM/51 [VISHAY]
Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, MINIATURE, PLASTIC, CASE DFM, 4 PIN;
| 型号： | EDF1AM/51 |
| 厂家： | 
VISHAY |
| 描述： | Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, MINIATURE, PLASTIC, CASE DFM, 4 PIN 光电二极管 |
| 文件： | 总4页 (文件大小：177K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EDF1AM thru EDF1DM
Vishay General Semiconductor
Miniature Glass Passivated Ultrafast Bridge Rectifier
Case Style DFM
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
IR
1 A
50 V to 200 V
50 A
5 µA
~
~
VF
1.05 V
trr
50 ns
~
~
Tj max.
150 °C
Features
Mechanical Data
• UL Recognition, file number E54214
Case: DFM
• Ideal for printed circuit boards
Epoxy meets UL-94V-0 Flammability rating
• Ultrafast reverse recovery time for high frequency
• Applicable for automative insertion
• High surge current capability
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: As marked on body
• Solder Dip 260 °C, 40 seconds
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for SMPS, Lighting Ballaster, Adapter, Bat-
tery Charger, Home Appliances, Office Equipment,
and Telecommunication applications
Maximum Ratings
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbol
EDF1AM
50
EDF1BM
100
EDF1CM
150
EDF1DM
200
Unit
V
Maximum repetitive peak reverse voltage
VRRM
VRMS
VDC
Maximum RMS voltage
35
50
70
106
150
140
200
V
V
A
A
Maximum DC blocking voltage
100
Max. average forward output rectified current at TA= 40 °C
IF(AV)
IFSM
1.0
50
Peak forward surge current single sine-wave superimposed
on rated load
I2t
A2sec
°C
Rating for fusing (t < 8.3 ms)
10
Operating junction and storage temperature range
TJ,TSTG
- 55 to + 150
Document Number 88577
08-Jul-05
www.vishay.com
1
EDF1AM thru EDF1DM
Vishay General Semiconductor
Electrical Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Test condition
at 1.0 A
Symbol
VF
EDF1AM
EDF1BM
EDF1CM
EDF1DM
Unit
V
Maximum instantaneous
1.05
forward voltage drop per leg
Maximum reverse current at TA = 25 °C
rated DC blocking voltage
IR
trr
5.0
1.0
µA
mA
TA = 125 °C
Maximum reverse recovery at IF = 0.5 A, IR = 1.0 A,
time
50
ns
Irr = 0.25 A
Thermal Characteristics
Ratings at 25 °C ambient temperature unless otherwise specified.
Parameter
Symbol
EDF1AM
EDF1BM
EDF1CM
EDF1DM
Unit
Typical thermal resistance per leg (1)
RθJA
RθJL
38
12
°C/W
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead mounted on P.C.B. with 0.5 x 0.5" (13 x 13 mm) copper pads
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
1.0
10
60 HZ Resistive
or Inductive Load
P.C.B. Mounted on
0.75
0.5
0.25
0
0.51 x 0.51" (13 x 13 mm)
Copper Pads with 0.06"
(1.5 mm) Lead Length
1
Capacitive
Loads
0.1
T
J
= 25 °C
IPK / IAV = 5.0
IPK / IAV = 10
IPK / IAV = 20
Pulse width = 300µs
1% Duty Cycle
0.01
0.6
0.8
1.0
1.2
1.4
0.4
20
40
60
80
140
160
100
120
Instantaneous Forward Voltage (V)
Ambient Temperature (°C)
Figure 3. Typical Forward Characteristics Per Leg
Figure 1. Derating Curves Output Rectified Current
1,000
100
60
T
= 150 °C
J
50
40
30
20
Single Sine-Wave
T
J
= 125 °C
10
1
1.0 Cycle
10
10
0
T
= 25 °C
40
J
0.1
1
100
0
20
80
60
100
Number of Cycles at 60 Hz
Percent of Rated Peak Reverse Voltage (%)
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Reverse Leakage Characteristics Per Leg
www.vishay.com
2
Document Number 88577
08-Jul-05
EDF1AM thru EDF1DM
Vishay General Semiconductor
30
25
20
15
10
5.0
0
T
= 25 °C
J
f = 1.0 MHz
Vsig = 50mVp-p
0.1
1
10
100 200
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Leg
Package outline dimensions in inches (millimeters)
Case Style DFM
0.255 (6.5) 0.315 (8.00)
0.245 (6.2)
0.285 (7.24)
0.335 (8.51)
0.320 (8.12)
0.130 (3.3)
0.120 (3.05)
0.080 (2.03)
0.050 (1.27)
0.045 (1.14)
0.035 (0.89)
0.023 (0.58)
0.018 (0.46)
0.013 (3.3)
0.0086 (0.22)
0.185 (4.69)
0.150 (3.81)
0.350 (8.9)
0.300 (7.6)
0.075 (1.90)
0.055 (1.39)
0.205 (5.2)
0.195 (5.0)
Document Number 88577
08-Jul-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
EDF1AM/51-E3
DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
EDF1AM/72
Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, MINIATURE, PLASTIC, CASE DFM, 4 PIN
VISHAY
EDF1AM/72-E3
DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
EDF1AS-E3
DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFS, 4 PIN, Bridge Rectifier Diode
VISHAY
EDF1AS/72
Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, MINIATURE, PLASTIC, CASE DFS, 4 PIN
VISHAY
EDF1ASE3
DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFS, 4 PIN, Bridge Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明