EDF1AS-E3 [VISHAY]
DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFS, 4 PIN, Bridge Rectifier Diode;
| 型号： | EDF1AS-E3 |
| 厂家： | 
VISHAY |
| 描述： | DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFS, 4 PIN, Bridge Rectifier Diode 光电二极管 |
| 文件： | 总4页 (文件大小：182K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EDF1AS thru EDF1DS
New Product
Vishay General Semiconductor
Miniature Glass Passivated Ultrafast
Surface Mount Bridge Rectifiers
Case Style DFS
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
IR
1 A
50 V to 200 V
50 A
~
5 µA
VF
1.05 V
~
trr
50 ns
~
Tj max.
150 °C
~
Features
Mechanical Data
• UL Recognition, file number E54214
Case: DFS
• Ideal for automated placement
Epoxy meets UL-94V-0 Flammability rating
• Ultrafast reverse recovery time for high frequency
• High surge current capability
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: As marked on body
• Meets MSL level 1, per J-STD-020C
• Solder Dip 260 °C, 40 seconds
Typical Applications
General purpose use in ac-to-dc bridge full wave rec-
tification for SMPS, Lighting Ballaster, Adapter, Bat-
tery Charger, Home Appliances, Office Equipment,
and Telecommunication applications
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
VRRM
EDF1AS
50
EDF1BS
100
EDF1CS
150
EDF1DS
200
Unit
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRMS
VDC
35
50
70
106
150
140
200
V
V
A
Maximum DC blocking voltage
100
Maximum average forward output rectified
current at TA = 40 °C(2)
IF(AV)
1.0
Peak forward surge current single half sine-
wave superimposed on rated load
IFSM
50
10
A
I2t
A2sec
°C
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature
range
TJ,TSTG
- 55 to + 150
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Test condition Symbol
VF
EDF1AS
EDF1BS
EDF1CS
EDF1DS
Unit
V
at 1.0 A (2)
Max. instantaneous forward
voltage drop per leg
1.05
Document Number 88578
12-Jul-05
www.vishay.com
1
EDF1AS thru EDF1DS
Vishay General Semiconductor
Parameter
Test condition Symbol
A = 25 °C IR
EDF1AS
EDF1BS
EDF1CS
EDF1DS
Unit
Maximum DC reverse current
at rated DC blocking voltage
T
5.0
1.0
µA
mA
TA = 125 °C
Max. reverse recovery time
at IF = 0.5 A,
IR = 1.0 A,
Irr = 0.25 A
trr
50
ns
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Typical thermal resistance per leg(1)
Symbol
RθJA
RθJL
EDF1AS
EDF1BS
EDF1CS
EDF1DS
Unit
38
12
°C/W
Notes:
(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas
(2) Pulse test: 300 ms pulse width, 1 % duty cycle
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
1.0
10
IPK / IAV
or Inductive Load
=
Resistive
π
0.75
0.5
0.25
0
1
0.1
0.51 x 0.51" (13 x 13 mm)
Copper pads
Capacitive
Loads
T
= 25 °C
J
IPK / IAV = 5.0
IPK / IAV = 10
IPK / IAV = 20
Pulse width = 300 µs
1% Duty Cycle
0.01
0.6
0.8
1.0
1.2
1.4
0.4
20
40
60
80
140
160
100
120
Instantaneous Forward Voltage (V)
Ambient Temperature (°C)
Figure 1. Derating Curves Output Rectified Current
Figure 3. Typical Forward Characteristics Per Leg
1,000
60
T
= 150 °C
J
50
40
30
20
Single Sine-Wave
100
10
T
= 125°C
J
1
1.0 Cycle
10
10
0
T
= 25 °C
40
J
0.1
0
20
80
60
100
1
100
Percent of Rated Peak Reverse Voltage (%)
Number of Cycles at 60 Hz
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Figure 4. Typical Reverse Leakage Characteristics Per Leg
www.vishay.com
2
Document Number 88578
12-Jul-05
EDF1AS thru EDF1DS
Vishay General Semiconductor
30
25
20
15
10
5.0
0
T
= 25 °C
J
f = 1.0 MHz
Vsig = 50mVp-p
0.1
1
10
Reverse Voltage (V)
100 200
Figure 5. Typical Junction Capacitance Per Leg
Package outline dimensions in inches (millimeters)
Case Style DFS
Mounting Pad Layout
0.205 (5.2)
0.195 (5.0)
0.047 (1.20)
0.040 (1.02)
0.047 Min.
(1.20 Min.)
0.404 Max.
(10.26 Max.)
0.060 Min.
(1.52 Min.)
0.404 (10.3)
0.386 (9.80)
0.205 (5.2)
0.195 (5.0)
0.335 (8.51)
o
0.320 (8.13)
45
0.255 (6.5)
0.245 (6.2)
0.013 (0.330)
0.009 (0.241)
0.130 (3.3)
0.120 (3.05)
0.060 (1.524)
0.040 (1.016)
0.013 (0.330)
0.003 (0.076)
Document Number 88578
12-Jul-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
相关型号：
EDF1AS/72
Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, MINIATURE, PLASTIC, CASE DFS, 4 PIN
VISHAY
EDF1ASE3
DIODE 1 A, 50 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFS, 4 PIN, Bridge Rectifier Diode
VISHAY
EDF1BM-E3
DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, LEAD FREE, MINIATURE, PLASTIC, CASE DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
EDF1BM-E3/50
DIODE 1 A, 100 V, SILICON, BRIDGE RECTIFIER DIODE, PLASTIC, DFM, 4 PIN, Bridge Rectifier Diode
VISHAY
©2020 ICPDF网 联系我们和版权申明