EGP10C-E3/23 [VISHAY]
Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN;
| 型号： | EGP10C-E3/23 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 1A, 150V V(RRM), Silicon, DO-204AL, ROHS COMPLIANT, PLASTIC, DO-41, 2 PIN 二极管 |
| 文件： | 总4页 (文件大小：86K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EGP10A thru EGP10G
Vishay General Semiconductor
Glass Passivated Ultrafast Rectifier
FEATURES
• Cavity-free glass-passivated junction
• Ultrafast reverse recovery time
• Low forward voltage drop
• Low leakage current
• Low switching losses, high efficiency
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
*Glass Encapsulation
technique is covered by
Patent No. 3,996,602,
brazed-lead assembly
to Patent No. 3,930,306
DO-204AL (DO-41)
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
For use in high frequency rectification and free-
wheeling application in switching mode converters
and inverters for consumer, computer and
telecommunication.
MAJOR RATINGS AND CHARACTERISTICS
IF(AV)
VRRM
IFSM
trr
1.0 A
50 V to 200 V
30 A
MECHANICAL DATA
Case: DO-204AL, molded epoxy over glass body
Epoxy meets UL 94V-0 flammability rating
Terminals: Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
50 ns
VF
0.95 V, 1.25 V
150 °C
Tj max.
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity: Color band denotes cathode end
MAXIMUM RATINGS T = 25 °C unless otherwise noted
A
PARAMETER
SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
150
105
150
200
140
200
300
210
300
400
280
400
V
V
V
Maximum DC blocking voltage
100
Maximum average forward rectified current
0.375" (9.5 mm) lead length at TA = 55 °C
IF(AV)
1.0
30
A
Peak forward surge current 8.3 ms single half
sine-wave superimposed on rated load
IFSM
A
Operating and storage temperature range
TJ, TSTG
- 65 to + 150
°C
Document Number 88582
16-May-06
www.vishay.com
1
EGP10A thru EGP10G
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
TEST CONDITIONS
SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Maximum instantaneous
forward voltage
at 1.0 A
VF
0.95
1.25
V
Maximum DC reverse
current at rated DC
blocking voltage
T
T
A = 25 °C
A = 125 °C
5.0
100
IR
µA
Maximum reverse
recovery time
at IF = 0.5 A, IR = 1.0 A,
rr = 0.25 A
trr
50
ns
I
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
22
15
pF
THERMAL CHARACTERISTICS (T = 25 °C unless otherwise noted)
A
PARAMETER
SYMBOL EGP10A EGP10B EGP10C EGP10D EGP10F EGP10G UNIT
Typical thermal resistance (1)
RθJA 50 °C/W
Note:
(1) Thermal resistance from junction to ambient, and from junction to lead at 0.375" (9.5 mm) lead length, P.C.B. mounted
ORDERING INFORMATION
PREFERRED P/N
EGP10D-E3/54
EGP10D-E3/73
UNIT WEIGHT (g)
PREFERRED PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
0.337
54
73
5500
3000
13" Diameter Paper Tape & Reel
Ammo Pack Packaging
0.337
RATINGS AND CHARACTERISTICS CURVES
(T = 25 °C unless otherwise noted)
A
1.0
30
25
20
15
10
5.0
0
TJ = TJ max.
8.3 ms Single Half Sine-Wave
0.5
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
0
1
10
100
0
25
50
75
100
125
150
175
Number of Cycles at 60 Hz
Lead Temperature (°C)
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
www.vishay.com
2
Document Number 88582
16-May-06
EGP10A thru EGP10G
Vishay General Semiconductor
50
10
70
60
50
T
J
= 25 °C
f = 1.0 MHz
sig = 50 mVp-p
Pulse Width = 300 µs
1 % Duty Cycle
V
TJ = 150 °C
40
30
20
1
TJ = 25 °C
0.1
10
0
EGP10A – EGP10D
EGP10F – EGP10G
EGP10A – EGP10D
EGP10F – EGP10G
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
1
10
100
Instantaneous Forward Voltage (V)
Reverse Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
100
10
1000
100
TJ = 150 °C
10
TJ
= 100 °C
1
1
0.1
TJ
= 25 °C
60
0.01
0.1
0.01
0
20
40
80
100
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
DO-204AL (DO-41)
1.0 (25.4)
MIN.
0.107 (2.7)
0.080 (2.0)
DIA.
0.205 (5.2)
0.160 (4.1)
1.0 (25.4)
MIN.
0.034 (0.86)
0.028 (0.71)
DIA.
0.026 (0.66)
0.023 (0.58)
NOTE: Lead diameter is
for suffix “E” part numbers
Document Number 88582
16-May-06
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
www.vishay.com
1
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