ES1PD [VISHAY]
High Current Density Surface Mount Ultrafast Rectifiers; 高电流密度表面贴装超快整流器
| 型号： | ES1PD |
| 厂家： | 
VISHAY |
| 描述： | High Current Density Surface Mount Ultrafast Rectifiers |
| 文件： | 总2页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ES1PA thru ES1PD
Vishay Semiconductors
New Product
formerly General Semiconductor
High Current Density Surface Mount Ultrafast Rectifiers
Reverse Voltage 50 to 200 V
Case Style SMP
Forward Current 1.0 A
Reverse Recovery Time 15 ns
Cathode band
Features
• Very low profile - typical height of 1.0mm
• For surface mount application
0.086 (2.18)
0.074 (1.88)
• Glass passivated chip junction
• Ultrafast recovery times for high efficiency
• Low forward voltage, low power loss
• Built in strain relief, ideal for automated placement
• High temperature soldering:
260°C maximum/10 seconds at terminals
• Meets MSL level 1 per J-STD-020C
0.142 (3.61)
0.126 (3.19)
0.158 (4.00)
0.146 (3.70)
Mechanical Data
Case: SMP
0.013 (0.35)
0.004 (0.10)
Terminals: Matte Tin plated (E3 Suffix) leads, solderable
per J-STD-002B and MIL-STD-750, Method 2026
Polarity: Color band denotes cathode end
Weight: 0.0009 oz., 0.024 g
0.045 (1.15)
0.033 (0.85)
0.012 (0.30)
0.000 (0.00)
0.018 (0.45)
0.006 (0.15)
Epoxy meets UL 94V-0 flammability rating
Mounting Pad Layout
Dimensions in inches
and (millimeters)
0.030
(0.762)
0.012 (0.30) REF
0.105
(2.67)
0.025
(0.635)
0.053 (1.35)
0.041 (1.05)
0.036 (0.91)
0.024 (0.61)
0.050
(1.27)
0.100
(2.54)
0.032 (0.80)
0.016 (0.40)
0.103 (2.60)
0.087 (2.20)
Maximum Ratings & Thermal Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol
ES1PA
EA
ES1PB
EB
ES1PC
EC
ES1PD
ED
Unit
Device marking code
Maximum reverse voltage
Maximum average forward rectified current see Fig.1
Peak forward surge current 10ms single half sine-wave
superimposed on rated load
VRM
IF(AV)
50
100
150
200
V
A
1.0
30
IFSM
A
RθJA
RθJL
RθJC
105
15
Typical thermal resistance (1)
°C/W
°C
20
Operating junction and Storage temperature range
TJ, TSTG
–55 to +150
Electrical Characteristics (TA = 25°C unless otherwise noted.)
Parameter
Symbol
Value
0.865
0.920
Unit
Maximum instantaneous forward voltage(2) at IF=0.6A, TJ=25°C
VF
V
at IF=1A, TJ=25°C
Maximum reverse current
at rated VRM(2)
Maximum reverse recovery time at IF=0.5A, IR=1A, Irr=0.25A
Typical reverse recovery time at TJ=25°C
at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C
TJ = 25°C
TJ =125°C
5.0
IR
trr
trr
µA
ns
ns
500
15
25
30
Typical reverse recovery time at
TJ=25°C
8
Qrr
CJ
nC
pF
at IF = 1.0A, VR = 30V dv/dt = 50A/µs, Irr = 10% IRM TJ=100°C
Typical junction capacitance at 4.0V, 1MHz
10
10
Notes: (1) Thermal resistance from junction to ambient and junction to lead mounted on P.C.B. with 5.0 x 5.0mm copper pad areas. RθJL is measured at the ter-
minal of cathode band. RθJC is measured at the top centre of the body
(2) Pulse test: 300µs pulse width, 1% duty cycle
Document Number 88918
23-Sep-04
www.vishay.com
1
ES1PA thru ES1PD
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Maximum Forward Current
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Derating Curve
30
25
1.2
1.0
0.8
0.6
20
15
10
05
0.4
TL measured
at the cathode band terminal
0.2
0
0
1
10
100
80
90
100
110
120
130
140
150
Lead Temperature (°C)
Number of Cycles at 50 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse Leakage
Characteristics
10000
1000
100
100
10
TJ = 150°C
TJ = 150°C
TJ = 125°C
10
1
TJ = 25°C
1
0.1
0.1
TJ = 25°C
TJ = 125°C
0.01
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
20
30
40 50
60
70
80
90
100
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 6 – Typical Transient Thermal
Impedance
Fig. 5 – Typical Junction Capacitance
1000
100
100
10
10
1
1
0.01
0.1
1
10
100
0.1
1
10
100
Reverse Voltage (V)
t, Pulse Duration (sec.)
www.vishay.com
2
Document Number 88918
23-Sep-04
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