G2B/1 [VISHAY]
Rectifier Diode, 1 Element, 2A, 100V V(RRM),;
| 型号： | G2B/1 |
| 厂家： | 
VISHAY |
| 描述： | Rectifier Diode, 1 Element, 2A, 100V V(RRM), 二极管 |
| 文件： | 总2页 (文件大小：22K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
G2A thru G2M
Vishay Semiconductors
formerly General Semiconductor
Glass Passivated Junction Rectifiers
Reverse Voltage
50 to 1000V
Forward Current 2.0A
Features
DO-204AP
• High temperature metallurgically bonded
constructed rectifiers
0.034 (0.86)
• Cavity-free glass passivated junction
• Hermetically sealed package
• 2.0 ampere operation at TA=75°C with no thermal runaway
• Typical IR less than 0.1µA
0.028 (0.71)
DIA.
1.0 (25.4)
MIN.
• Capable of meeting environmental standards of
MIL-S-19500
• High temperature soldering guaranteed: 350°C/10 seconds,
0.375" (9.5mm) lead length, 5 lbs. (2.3kg) tension
Dimensions in inches
and (millimeters)
0.240 (6.1)
MAX.
Mechanical Data
Case: JEDEC DO-204AP Solid glass body
Terminals: Solder plated axial leads, solderable per
MIL-STD-750, Method 2026
0.150 (3.8)
0.100 (2.5)
DIA.
Polarity: Color band denotes cathode end
1.0 (25.4)
MIN.
Mounting Position: Any
Weight: 0.02 oz., 0.56 g
Packaging Codes – Options:
1 – 4K per Bulk box, 40k/ carton
4 – 4.5K per 13” reel (52.4mm Tape), 18K/carton
23 – 3K per Ammo mag. (52.4mm Tape), 27K/carton
*Brazed-lead assembly is covered by Patent No. 3,930,306
Maximum Ratings & Thermal Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Parameter
Symbol G2A G2B G2D G2G G2J G2K G2M Unit
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VDC
50
35
50
100
70
200
140
200
400
280
400
600
420
600
800 1000
560 700
800 1000
V
V
V
Maximum DC blocking voltage
70
Maximum average forward rectified current
0.375” (9.5mm) lead length at TA = 75°C
IF(AV)
IFSM
2.0
50
A
A
Peak forward surge current 8.3ms single half sine-wave
superimposed on rated load (JEDEC Method)
Maximum full load reverse current, full cycle average
0.375” (9.5mm) lead length at TA = 100°C
IR(AV)
100
55
µA
Typical thermal resistance(1)
RθJA
°C/W
Operating junction and storage temperature range
TJ, TSTG
–65 to +175
°C
Electrical Characteristics Ratings at 25°C ambient temperature unless otherwise specified.
Maximum instantaneous forward voltage at 2.0A
VF
1.2
1.1
V
Maximum DC reverse current
at rated DC blocking voltage
TA = 25°C
TA = 150°C
1.0
100
IR
µA
Typical reverse recovery time at
IF = 0.5A, IR = 1.0A, Irr = 0.25A
trr
3.5
15
µs
Typical junction capacitance at 4.0V, 1MHz
CJ
pF
Note: (1) Thermal resistance from junction to ambient at 0.375” (9.5mm) lead length, P.C.B. mounted
Document Number 88602
26-Feb-02
www.vishay.com
1
G2A thru G2M
Vishay Semiconductors
formerly General Semiconductor
Ratings and
Characteristic Curves (TA = 25°C unless otherwise noted)
Fig. 1 – Maximum Forward Current
Fig. 2 – Maximum Non-Repetitive Peak
Forward Surge Current
Derating Curve
50
40
30
20
10
0
2.0
TJ = TJ max.
8.3ms Single Half Sine-Wave
(JEDEC Method)
60HZ Resistive or
Inductive Load
1.5
1.0
Capacitance Load
Inductive Load
Ipk/IAV = 5.0
10
0.5
20
0.375 (9.5mm)
Lead Length
0
0
25
50
75
100
125
150
175
1
10
100
Ambient Temperature (°C)
Number of Cycles at 60 H
Z
Fig. 3 – Typical Instantaneous
Forward Characteristics
Fig. 4 – Typical Reverse Characteristics
10
10
TJ = 125°C
TJ = 150°C
1
1
TJ = 25°C
TJ = 75°C
TJ = 25°C
0.1
0.1
Pulse Width = 300µs
1% Duty Cycle
0.01
0.01
0
20
40
60
80
100
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Instantaneous Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 – Typical Junction Capacitance
30
10
TJ = 25°C
f = 1.0MHZ
Vsig = 50mVp — p
1
1
10
100
Reverse Voltage (V)
www.vishay.com
2
Document Number 88602
26-Feb-02
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