GB50NA120UX [VISHAY]

'High Side Chopper' IGBT SOT-227 (Ultrafast IGBT), 50 A; “高端砍刀” IGBT SOT- 227 (超高速IGBT ) , 50 A
GB50NA120UX
型号: GB50NA120UX
厂家: VISHAY    VISHAY
描述:

'High Side Chopper' IGBT SOT-227 (Ultrafast IGBT), 50 A
“高端砍刀” IGBT SOT- 227 (超高速IGBT ) , 50 A

晶体 晶体管 功率控制 双极性晶体管 栅 局域网
文件: 总10页 (文件大小:177K)
中文:  中文翻译
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GB50NA120UX  
Vishay Semiconductors  
"High Side Chopper" IGBT SOT-227  
(Ultrafast IGBT), 50 A  
FEATURES  
• NPT Generation V IGBT technology  
• Square RBSOA  
• HEXFRED® clamping diode  
• Positive VCE(on) temperature coefficient  
• Fully isolated package  
SOT-227  
• Speed 8 kHz to 60 kHz  
• Very low internal inductance (5 nH typical)  
• Industry standard outline  
• UL approved file E78996  
• Compliant to RoHS directive 2002/95/EC  
PRODUCT SUMMARY  
BENEFITS  
VCES  
1200 V  
50 A at 92 °C  
3.22 V  
• Designed for increased operating efficiency in power  
conversion: UPS, SMPS, welding, induction heating  
IC DC  
VCE(on) typical at 50 A, 25 °C  
• Easy to assemble and parallel  
• Direct mounting on heatsink  
• Plug-in compatible with other SOT-227 packages  
• Low EMI, requires less snubbing  
ABSOLUTE MAXIMUM RATINGS  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MAX.  
1200  
84  
UNITS  
Collector to emitter voltage  
VCES  
V
TC = 25 °C  
Continuous collector current  
IC  
TC = 80 °C  
57  
Pulsed collector current  
ICM  
ILM  
150  
150  
76  
A
Clamped inductive load current  
TC = 25 °C  
TC = 80 °C  
Diode continuous forward current  
Gate to emitter voltage  
IF  
52  
VGE  
PD  
20  
V
W
V
TC = 25 °C  
431  
242  
278  
156  
2500  
Power dissipation, IGBT  
TC = 80 °C  
TC = 25 °C  
Power dissipation, diode  
RMS isolation voltage  
PD  
TC = 80 °C  
VISOL  
Any terminal to case, t = 1 min  
Document Number: 93101  
Revision: 22-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
1
GB50NA120UX  
Vishay Semiconductors  
"High Side Chopper" IGBT SOT-227  
(Ultrafast IGBT), 50 A  
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
MAX.  
UNITS  
Collector to emitter breakdown  
voltage  
VBR(CES)  
VGE = 0 V, IC = 1 mA  
1200  
-
-
VGE = 15 V, IC = 25 A  
VGE = 15 V, IC = 50 A  
-
-
2.46  
3.22  
2.84  
3.78  
5
-
2.80  
3.60  
3.0  
4
V
Collector to emitter voltage  
VCE(on)  
VGE = 15 V, IC = 25 A, TJ = 125 °C  
-
VGE = 15 V, IC = 50 A, TJ = 125 °C  
VCE = VGE, IC = 500 μA  
-
Gate threshold voltage  
VGE(th)  
4
Temperature coefficient of  
threshold voltage  
V
GE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)  
-
- 10  
-
mV/°C  
VGE = 0 V, VCE = 1200 V  
VGE = 0 V, VCE = 1200 V, TJ = 125 °C  
IR = 1 mA  
-
6
0.7  
-
50  
2.0  
-
μA  
mA  
V
Collector to emitter leakage current  
Diode reverse breakdown voltage  
ICES  
VBR  
-
1200  
IC = 25 A, VGE = 0 V  
-
-
-
-
-
-
-
1.99  
2.53  
1.96  
2.66  
4
2.42  
3.00  
2.30  
3.08  
50  
I
C = 50 A, VGE = 0 V  
IC = 25 A, VGE = 0 V, TJ = 125 °C  
C = 50 A, VGE = 0 V, TJ = 125 °C  
Diode forward voltage drop  
VFM  
V
I
VR = VR rated  
μA  
mA  
nA  
Diode reverse leakage current  
Gate to emitter leakage current  
IRM  
TJ = 125 °C, VR = VR rated  
0.6  
-
3
IGES  
VGE  
=
20 V  
200  
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)  
PARAMETER  
SYMBOL  
TEST CONDITIONS  
MIN.  
TYP.  
400  
43  
MAX.  
UNITS  
Total gate charge (turn-on)  
Gate to emitter charge (turn-on)  
Gate to collector charge (turn-on)  
Turn-on switching loss  
Turn-off switching loss  
Total switching loss  
Turn-on switching loss  
Turn-off switching loss  
Total switching loss  
Turn-on delay time  
Qg  
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Qge  
Qgc  
Eon  
IC = 50 A, VCC = 600 V, VGE = 15 V  
nC  
187  
2.72  
1.11  
3.83  
3.94  
2.31  
6.25  
191  
53  
IC = 50 A, VCC = 600 V,  
VGE = 15 V, Rg = 5   
L = 500 μH, TJ = 25 °C  
Eoff  
Etot  
Eon  
mJ  
ns  
Energy losses  
include tail and  
diode recovery  
(see fig. 18)  
Eoff  
Etot  
td(on)  
tr  
IC = 50 A, VCC = 600 V,  
VGE = 15 V, Rg = 5   
L = 500 μH, TJ = 125 °C  
Rise time  
Turn-off delay time  
td(off)  
tf  
223  
143  
Fall time  
TJ = 150 °C, IC = 150 A, Rg = 22   
GE = 15 V to 0 V, VCC = 900 V,  
Reverse bias safe operating area  
RBSOA  
V
Fullsquare  
VP = 1200 V  
Diode reverse recovery time  
Diode peak reverse current  
Diode recovery charge  
trr  
Irr  
-
-
-
-
-
-
129  
11  
161  
14  
ns  
A
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V  
Qrr  
trr  
700  
208  
17  
1046  
257  
21  
nC  
ns  
A
Diode reverse recovery time  
Diode peak reverse current  
Diode recovery charge  
IF = 50 A, dIF/dt = 200 A/μs,  
Irr  
VR = 200 V, TJ = 125 °C  
Qrr  
1768  
2698  
nC  
www.vishay.com  
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For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 93101  
Revision: 22-Jul-10  
GB50NA120UX  
Vishay Semiconductors  
"High Side Chopper" IGBT SOT-227  
(Ultrafast IGBT), 50 A  
THERMAL AND MECHANICAL SPECIFICATIONS  
PARAMETER  
SYMBOL  
MIN.  
TYP.  
MAX.  
UNITS  
Maximum junction and  
storage temperature range  
TJ, TStg  
- 40  
-
150  
°C  
IGBT  
-
-
-
-
-
-
-
0.29  
0.45  
-
Thermal resistance, junction to case  
RthJC  
RthCS  
Diode  
°C/W  
Thermal resistance, case to sink per module  
Mounting torque, 6-32 or M3 screw  
Weight  
0.05  
-
1.3  
-
Nm  
g
30  
160  
140  
120  
100  
80  
200  
175  
150  
125  
100  
75  
TJ = 25 °C  
TJ = 125 °C  
60  
40  
50  
20  
25  
0
0
0
10 20 30 40 50 60 70 80 90  
0
1
2
3
4
5
6
7
8
IC - Continuous Collector Current (A)  
VCE (V)  
Fig. 1 - Maximum DC IGBT Collector Current vs.  
Case Temperature  
Fig. 3 - Typical IGBT Collector Current Characteristics  
1000  
100  
10  
10  
1
0.1  
TJ = 125 °C  
1
0.01  
TJ = 25 °C  
900  
0.1  
0.001  
0.0001  
0.01  
100  
300  
500  
700  
1100  
1
10  
100  
1000  
10 000  
VCE (V)  
VCES (V)  
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current  
Fig. 2 - IGBT Reverse Bias SOA  
TJ = 150 °C, VGE = 15 V  
Document Number: 93101  
Revision: 22-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
3
GB50NA120UX  
Vishay Semiconductors  
"High Side Chopper" IGBT SOT-227  
(Ultrafast IGBT), 50 A  
5.5  
200  
175  
150  
125  
100  
75  
TJ = 25 °C  
5.0  
TJ = 25 °C  
4.5  
4.0  
3.5  
3.0  
TJ = 125 °C  
TJ = 125 °C  
50  
25  
0
0.0002  
0.0004  
0.0006  
0.0008  
0.001  
0
1
2
3
4
5
6
IC (mA)  
VFM (V)  
Fig. 5 - Typical IGBT Threshold Voltage  
Fig. 8 - Typical Diode Forward Characteristics  
6
5
4
3
4
3
2
1
0
100 A  
Eon  
50 A  
25 A  
Eoff  
2
10  
30  
50  
70  
90  
110 130 150  
10  
20  
30  
40  
50  
TJ (°C)  
IC (A)  
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.  
Junction Temperature, VGE = 15 V  
Fig. 9 - Typical IGBT Energy Loss vs. IC  
TJ = 125 °C, L = 500 μH, VCC = 600 V,  
Rg = 5 , VGE = 15 V  
160  
140  
120  
100  
80  
1000  
100  
10  
td(off)  
td(on)  
tf  
60  
40  
tr  
20  
0
0
10  
20  
30  
40  
50  
60  
70  
80  
0
10  
20  
30  
40  
50  
60  
IF - Continuous Forward Current (A)  
IC (A)  
Fig. 7 - Maximum DC Forward Current vs.  
Case Temperature  
Fig. 10 - Typical IGBT Switching Time vs. IC  
TJ = 125 °C, L = 500 μH, VCC = 600 V,  
Rg = 5 , VGE = 15 V  
www.vishay.com  
4
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 93101  
Revision: 22-Jul-10  
GB50NA120UX  
Vishay Semiconductors  
"High Side Chopper" IGBT SOT-227  
(Ultrafast IGBT), 50 A  
12  
10  
8
250  
230  
210  
190  
170  
150  
130  
110  
Eon  
TJ = 125 °C  
6
4
TJ = 25 °C  
Eoff  
2
90  
0
70  
100  
0
10  
20  
30  
40  
50  
1000  
Rg (Ω)  
dIF/dt (A/µs)  
Fig. 11 - Typical IGBT Energy Loss vs. Rg  
TJ = 125 °C, IC = 50 A, L = 500 μH,  
Fig. 13 - Typical trr Diode vs. dIF/dt  
VR = 200 V, IF = 50 A  
V
CC = 600 V, VGE = 15 V  
1000  
100  
10  
40  
35  
30  
25  
20  
15  
10  
5
td(off)  
td(on)  
TJ = 125 °C  
tf  
TJ = 25 °C  
tr  
0
100  
0
10  
20  
30  
40  
50  
1000  
Rg (Ω)  
dIF/dt (A/µs)  
Fig. 14 - Typical Irr Diode vs. dIF/dt  
Fig. 12 - Typical IGBT Switching Time vs. Rg  
TJ = 125 °C, L = 500 μH, VCC = 600 V,  
VR = 200 V, IF = 50 A  
I
C = 50 A, VGE = 15 V  
2650  
2400  
2150  
1900  
1650  
1400  
1150  
900  
TJ = 125 °C  
TJ = 25 °C  
650  
400  
100  
1000  
dIF/dt (A/µs)  
Fig. 15 - Typical Qrr Diode vs. dIF/dt, VR = 200 V, IF = 50 A  
Document Number: 93101  
Revision: 22-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
5
GB50NA120UX  
Vishay Semiconductors  
"High Side Chopper" IGBT SOT-227  
(Ultrafast IGBT), 50 A  
1
0.1  
D = 0.50  
D = 0.20  
D = 0.10  
D = 0.05  
0.01  
D = 0.02  
D = 0.01  
DC  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t1 - Rectangular Pulse Duration (s)  
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)  
1
0.1  
D = 0.50  
D = 0.20  
D = 0.10  
D = 0.05  
D = 0.02  
D = 0.01  
0.01  
DC  
0.001  
0.00001  
0.0001  
0.001  
0.01  
0.1  
1
10  
t1 - Rectangular Pulse Duration (s)  
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)  
www.vishay.com  
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For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 93101  
Revision: 22-Jul-10  
GB50NA120UX  
Vishay Semiconductors  
"High Side Chopper" IGBT SOT-227  
(Ultrafast IGBT), 50 A  
VCC  
R =  
ICM  
L
D.U.T.  
VC  
*
50 V  
1000 V  
+
- VCC  
D.U.T.  
1
2
Rg  
* Driver same type as D.U.T.; VC = 80 % of Vce(max)  
* Note: Due to the 50 V power supply, pulse width and inductor  
will increase to obtain Id  
Fig. 18a - Clamped Inductive Load Test Circuit  
Fig. 18b - Pulsed Collector Current Test Circuit  
Diode clamp/  
D.U.T.  
L
-
+
- 5 V  
+
-
D.U.T./  
driver  
VCC  
Rg  
Fig. 19a - Switching Loss Test Circuit  
1
2
90 %  
10 %  
3
VC  
90 %  
10 %  
td(off)  
5 %  
IC  
tf  
tr  
td(on)  
t = 5 µs  
Eoff  
Eon  
Ets = (Eon + Eoff  
)
Fig. 19b - Switching Loss Waveforms Test Circuit  
Document Number: 93101  
Revision: 22-Jul-10  
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
www.vishay.com  
7
GB50NA120UX  
Vishay Semiconductors  
"High Side Chopper" IGBT SOT-227  
(Ultrafast IGBT), 50 A  
ORDERING INFORMATION TABLE  
Device code  
G
B
50  
N
A
120  
U
X
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Insulated Gate Bipolar Transistor (IGBT)  
B = IGBT Generation 5  
Current rating (50 = 50 A)  
Circuit configuration (N = High side chopper)  
Package indicator (A = SOT-227)  
Voltage rating (120 = 1200 V)  
Speed/type (U = Ultrafast IGBT)  
X = F/W HEXFRED® diode  
CIRCUIT CONFIGURATION  
4
3
1
2
LINKS TO RELATED DOCUMENTS  
Dimensions  
www.vishay.com/doc?95036  
www.vishay.com/doc?95037  
Packaging information  
www.vishay.com  
8
For technical questions within your region, please contact one of the following:  
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com  
Document Number: 93101  
Revision: 22-Jul-10  
Outline Dimensions  
Vishay Semiconductors  
SOT-227  
DIMENSIONS in millimeters (inches)  
38.30 (1.508)  
37.80 (1.488)  
Chamfer  
2.00 (0.079) x 45°  
4 x M4 nuts  
Ø 4.40 (0.173)  
Ø 4.20 (0.165)  
-A-  
4
1
3
2
25.70 (1.012)  
25.20 (0.992)  
6.25 (0.246)  
12.50 (0.492)  
7.50 (0.295)  
-B-  
R full  
15.00 (0.590)  
30.20 (1.189)  
29.80 (1.173)  
M
M
M
B
0.25 (0.010)  
C A  
8.10 (0.319)  
4 x  
7.70 (0.303)  
2.10 (0.082)  
1.90 (0.075)  
2.10 (0.082)  
1.90 (0.075)  
12.30 (0.484)  
11.80 (0.464)  
-C-  
0.12 (0.005)  
Notes  
Dimensioning and tolerancing per ANSI Y14.5M-1982  
Controlling dimension: millimeter  
Document Number: 95036  
Revision: 28-Aug-07  
For technical questions, contact: indmodules@vishay.com  
www.vishay.com  
1
Legal Disclaimer Notice  
Vishay  
Disclaimer  
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE  
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.  
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,  
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other  
disclosure relating to any product.  
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or  
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all  
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,  
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular  
purpose, non-infringement and merchantability.  
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical  
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements  
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular  
product with the properties described in the product specification is suitable for use in a particular application. Parameters  
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All  
operating parameters, including typical parameters, must be validated for each customer application by the customer’s  
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,  
including but not limited to the warranty expressed therein.  
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining  
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.  
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree  
to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and  
damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay  
or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to  
obtain written terms and conditions regarding products designed for such applications.  
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by  
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.  
Document Number: 91000  
Revision: 11-Mar-11  
www.vishay.com  
1

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