GB50NA120UX [VISHAY]
'High Side Chopper' IGBT SOT-227 (Ultrafast IGBT), 50 A; “高端砍刀” IGBT SOT- 227 (超高速IGBT ) , 50 A型号: | GB50NA120UX |
厂家: | VISHAY |
描述: | 'High Side Chopper' IGBT SOT-227 (Ultrafast IGBT), 50 A |
文件: | 总10页 (文件大小:177K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
FEATURES
• NPT Generation V IGBT technology
• Square RBSOA
• HEXFRED® clamping diode
• Positive VCE(on) temperature coefficient
• Fully isolated package
SOT-227
• Speed 8 kHz to 60 kHz
• Very low internal inductance ( 5 nH typical)
• Industry standard outline
• UL approved file E78996
• Compliant to RoHS directive 2002/95/EC
PRODUCT SUMMARY
BENEFITS
VCES
1200 V
50 A at 92 °C
3.22 V
• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating
IC DC
VCE(on) typical at 50 A, 25 °C
• Easy to assemble and parallel
• Direct mounting on heatsink
• Plug-in compatible with other SOT-227 packages
• Low EMI, requires less snubbing
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
1200
84
UNITS
Collector to emitter voltage
VCES
V
TC = 25 °C
Continuous collector current
IC
TC = 80 °C
57
Pulsed collector current
ICM
ILM
150
150
76
A
Clamped inductive load current
TC = 25 °C
TC = 80 °C
Diode continuous forward current
Gate to emitter voltage
IF
52
VGE
PD
20
V
W
V
TC = 25 °C
431
242
278
156
2500
Power dissipation, IGBT
TC = 80 °C
TC = 25 °C
Power dissipation, diode
RMS isolation voltage
PD
TC = 80 °C
VISOL
Any terminal to case, t = 1 min
Document Number: 93101
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
1
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNITS
Collector to emitter breakdown
voltage
VBR(CES)
VGE = 0 V, IC = 1 mA
1200
-
-
VGE = 15 V, IC = 25 A
VGE = 15 V, IC = 50 A
-
-
2.46
3.22
2.84
3.78
5
-
2.80
3.60
3.0
4
V
Collector to emitter voltage
VCE(on)
VGE = 15 V, IC = 25 A, TJ = 125 °C
-
VGE = 15 V, IC = 50 A, TJ = 125 °C
VCE = VGE, IC = 500 μA
-
Gate threshold voltage
VGE(th)
4
Temperature coefficient of
threshold voltage
V
GE(th)/TJ VCE = VGE, IC = 1 mA (25 °C to 125 °C)
-
- 10
-
mV/°C
VGE = 0 V, VCE = 1200 V
VGE = 0 V, VCE = 1200 V, TJ = 125 °C
IR = 1 mA
-
6
0.7
-
50
2.0
-
μA
mA
V
Collector to emitter leakage current
Diode reverse breakdown voltage
ICES
VBR
-
1200
IC = 25 A, VGE = 0 V
-
-
-
-
-
-
-
1.99
2.53
1.96
2.66
4
2.42
3.00
2.30
3.08
50
I
C = 50 A, VGE = 0 V
IC = 25 A, VGE = 0 V, TJ = 125 °C
C = 50 A, VGE = 0 V, TJ = 125 °C
Diode forward voltage drop
VFM
V
I
VR = VR rated
μA
mA
nA
Diode reverse leakage current
Gate to emitter leakage current
IRM
TJ = 125 °C, VR = VR rated
0.6
-
3
IGES
VGE
=
20 V
200
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
400
43
MAX.
UNITS
Total gate charge (turn-on)
Gate to emitter charge (turn-on)
Gate to collector charge (turn-on)
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Qg
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Qge
Qgc
Eon
IC = 50 A, VCC = 600 V, VGE = 15 V
nC
187
2.72
1.11
3.83
3.94
2.31
6.25
191
53
IC = 50 A, VCC = 600 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 25 °C
Eoff
Etot
Eon
mJ
ns
Energy losses
include tail and
diode recovery
(see fig. 18)
Eoff
Etot
td(on)
tr
IC = 50 A, VCC = 600 V,
VGE = 15 V, Rg = 5
L = 500 μH, TJ = 125 °C
Rise time
Turn-off delay time
td(off)
tf
223
143
Fall time
TJ = 150 °C, IC = 150 A, Rg = 22
GE = 15 V to 0 V, VCC = 900 V,
Reverse bias safe operating area
RBSOA
V
Fullsquare
VP = 1200 V
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
trr
Irr
-
-
-
-
-
-
129
11
161
14
ns
A
IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V
Qrr
trr
700
208
17
1046
257
21
nC
ns
A
Diode reverse recovery time
Diode peak reverse current
Diode recovery charge
IF = 50 A, dIF/dt = 200 A/μs,
Irr
VR = 200 V, TJ = 125 °C
Qrr
1768
2698
nC
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For technical questions within your region, please contact one of the following:
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Document Number: 93101
Revision: 22-Jul-10
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNITS
Maximum junction and
storage temperature range
TJ, TStg
- 40
-
150
°C
IGBT
-
-
-
-
-
-
-
0.29
0.45
-
Thermal resistance, junction to case
RthJC
RthCS
Diode
°C/W
Thermal resistance, case to sink per module
Mounting torque, 6-32 or M3 screw
Weight
0.05
-
1.3
-
Nm
g
30
160
140
120
100
80
200
175
150
125
100
75
TJ = 25 °C
TJ = 125 °C
60
40
50
20
25
0
0
0
10 20 30 40 50 60 70 80 90
0
1
2
3
4
5
6
7
8
IC - Continuous Collector Current (A)
VCE (V)
Fig. 1 - Maximum DC IGBT Collector Current vs.
Case Temperature
Fig. 3 - Typical IGBT Collector Current Characteristics
1000
100
10
10
1
0.1
TJ = 125 °C
1
0.01
TJ = 25 °C
900
0.1
0.001
0.0001
0.01
100
300
500
700
1100
1
10
100
1000
10 000
VCE (V)
VCES (V)
Fig. 4 - Typical IGBT Zero Gate Voltage Collector Current
Fig. 2 - IGBT Reverse Bias SOA
TJ = 150 °C, VGE = 15 V
Document Number: 93101
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
3
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
5.5
200
175
150
125
100
75
TJ = 25 °C
5.0
TJ = 25 °C
4.5
4.0
3.5
3.0
TJ = 125 °C
TJ = 125 °C
50
25
0
0.0002
0.0004
0.0006
0.0008
0.001
0
1
2
3
4
5
6
IC (mA)
VFM (V)
Fig. 5 - Typical IGBT Threshold Voltage
Fig. 8 - Typical Diode Forward Characteristics
6
5
4
3
4
3
2
1
0
100 A
Eon
50 A
25 A
Eoff
2
10
30
50
70
90
110 130 150
10
20
30
40
50
TJ (°C)
IC (A)
Fig. 6 - Typical IGBT Collector to Emitter Voltage vs.
Junction Temperature, VGE = 15 V
Fig. 9 - Typical IGBT Energy Loss vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
160
140
120
100
80
1000
100
10
td(off)
td(on)
tf
60
40
tr
20
0
0
10
20
30
40
50
60
70
80
0
10
20
30
40
50
60
IF - Continuous Forward Current (A)
IC (A)
Fig. 7 - Maximum DC Forward Current vs.
Case Temperature
Fig. 10 - Typical IGBT Switching Time vs. IC
TJ = 125 °C, L = 500 μH, VCC = 600 V,
Rg = 5 , VGE = 15 V
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For technical questions within your region, please contact one of the following:
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Document Number: 93101
Revision: 22-Jul-10
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
12
10
8
250
230
210
190
170
150
130
110
Eon
TJ = 125 °C
6
4
TJ = 25 °C
Eoff
2
90
0
70
100
0
10
20
30
40
50
1000
Rg (Ω)
dIF/dt (A/µs)
Fig. 11 - Typical IGBT Energy Loss vs. Rg
TJ = 125 °C, IC = 50 A, L = 500 μH,
Fig. 13 - Typical trr Diode vs. dIF/dt
VR = 200 V, IF = 50 A
V
CC = 600 V, VGE = 15 V
1000
100
10
40
35
30
25
20
15
10
5
td(off)
td(on)
TJ = 125 °C
tf
TJ = 25 °C
tr
0
100
0
10
20
30
40
50
1000
Rg (Ω)
dIF/dt (A/µs)
Fig. 14 - Typical Irr Diode vs. dIF/dt
Fig. 12 - Typical IGBT Switching Time vs. Rg
TJ = 125 °C, L = 500 μH, VCC = 600 V,
VR = 200 V, IF = 50 A
I
C = 50 A, VGE = 15 V
2650
2400
2150
1900
1650
1400
1150
900
TJ = 125 °C
TJ = 25 °C
650
400
100
1000
dIF/dt (A/µs)
Fig. 15 - Typical Qrr Diode vs. dIF/dt, VR = 200 V, IF = 50 A
Document Number: 93101
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
5
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
0.01
D = 0.02
D = 0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 16 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
1
0.1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.01
DC
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
t1 - Rectangular Pulse Duration (s)
Fig. 17 - Maximum Thermal Impedance ZthJC Characteristics (Diode)
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For technical questions within your region, please contact one of the following:
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Document Number: 93101
Revision: 22-Jul-10
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
VCC
R =
ICM
L
D.U.T.
VC
*
50 V
1000 V
+
- VCC
D.U.T.
1
2
Rg
* Driver same type as D.U.T.; VC = 80 % of Vce(max)
* Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain Id
Fig. 18a - Clamped Inductive Load Test Circuit
Fig. 18b - Pulsed Collector Current Test Circuit
Diode clamp/
D.U.T.
L
-
+
- 5 V
+
-
D.U.T./
driver
VCC
Rg
Fig. 19a - Switching Loss Test Circuit
1
2
90 %
10 %
3
VC
90 %
10 %
td(off)
5 %
IC
tf
tr
td(on)
t = 5 µs
Eoff
Eon
Ets = (Eon + Eoff
)
Fig. 19b - Switching Loss Waveforms Test Circuit
Document Number: 93101
Revision: 22-Jul-10
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
www.vishay.com
7
GB50NA120UX
Vishay Semiconductors
"High Side Chopper" IGBT SOT-227
(Ultrafast IGBT), 50 A
ORDERING INFORMATION TABLE
Device code
G
B
50
N
A
120
U
X
1
2
3
4
5
6
7
8
1
2
3
4
5
6
7
8
-
-
-
-
-
-
-
-
Insulated Gate Bipolar Transistor (IGBT)
B = IGBT Generation 5
Current rating (50 = 50 A)
Circuit configuration (N = High side chopper)
Package indicator (A = SOT-227)
Voltage rating (120 = 1200 V)
Speed/type (U = Ultrafast IGBT)
X = F/W HEXFRED® diode
CIRCUIT CONFIGURATION
4
3
1
2
LINKS TO RELATED DOCUMENTS
Dimensions
www.vishay.com/doc?95036
www.vishay.com/doc?95037
Packaging information
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For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93101
Revision: 22-Jul-10
Outline Dimensions
Vishay Semiconductors
SOT-227
DIMENSIONS in millimeters (inches)
38.30 (1.508)
37.80 (1.488)
Chamfer
2.00 (0.079) x 45°
4 x M4 nuts
Ø 4.40 (0.173)
Ø 4.20 (0.165)
-A-
4
1
3
2
25.70 (1.012)
25.20 (0.992)
6.25 (0.246)
12.50 (0.492)
7.50 (0.295)
-B-
R full
15.00 (0.590)
30.20 (1.189)
29.80 (1.173)
M
M
M
B
0.25 (0.010)
C A
8.10 (0.319)
4 x
7.70 (0.303)
2.10 (0.082)
1.90 (0.075)
2.10 (0.082)
1.90 (0.075)
12.30 (0.484)
11.80 (0.464)
-C-
0.12 (0.005)
Notes
•
•
Dimensioning and tolerancing per ANSI Y14.5M-1982
Controlling dimension: millimeter
Document Number: 95036
Revision: 28-Aug-07
For technical questions, contact: indmodules@vishay.com
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Document Number: 91000
Revision: 11-Mar-11
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