GI858-E3 [VISHAY]
DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode;型号: | GI858-E3 |
厂家: | VISHAY |
描述: | DIODE 3 A, 800 V, SILICON, RECTIFIER DIODE, DO-201AD, LEAD FREE, PLASTIC PACKAGE-2, Rectifier Diode 功效 二极管 |
文件: | 总4页 (文件大小:297K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
GI850 thru GI858
Vishay General Semiconductor
Fast Switching Plastic Rectifier
Major Ratings and Characteristics
IF(AV)
VRRM
IFSM
trr
3.0 A
50 V to 800 V
100 A
200 ns
IR
10 µA
VF
1.25 V
DO-201AD
Tj max.
150 °C
Features
Mechanical Data
• Fast switching for high efficiency
• Low forward voltage drop
• Low leakage current
Case: DO-201AD, molded epoxy body
Epoxy meets UL-94V-0 Flammability rating
Terminals: Matte tin plated (E3 Suffix) leads, solder-
able per J-STD-002B and JESD22-B102D
Polarity: Color band denotes cathode end
• High forward surge capability
• Solder Dip 260 °C, 40 seconds
Typical Applications
For use in fast switching rectification of power supply,
inverters, converters and freewheeling diodes for
consumer and Telecommunication.
(Note: These devices are not Q101 qualified. There-
fore, the devices specified in this datasheet have not
been designed for use in automotive or Hi-Rel appli-
cations.)
Maximum Ratings
(TA = 25 °C unless otherwise noted)
Parameter
Symbol
VRRM
GI850
50
GI851
100
GI852
200
GI854
400
GI856
600
GI858
800
Unit
V
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRMS
VDC
35
50
75
70
140
200
250
280
400
450
420
600
650
560
800
880
V
V
V
A
Maximum DC blocking voltage
Maximum non-repetitive peak reverse voltage
100
150
VRSM
IF(AV)
Maximum average forward rectified current 0.375"
(9.5 mm) lead length at TA= 90 °C
3.0
Peak forward surge current 8.3 ms single half sine-
wave superimposed on rated load
IFSM
100
A
Operating junction and storage temperature range TJ,TSTG
- 50 to + 150
°C
Document Number 88630
10-Oct-05
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1
GI850 thru GI858
Vishay General Semiconductor
Electrical Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Maximum
instantaneous
forward voltage
Test condition
at 3.0 A
at 9.4 A, TJ = 175 °C
Symbol
VF
GI850
150
GI851
150
GI852
200
GI854
250
GI856
300
GI858
500
Unit
V
1.25
1.10
MaximumDCreverse
current at rated DC
blocking voltage
TA = 25 °C
TA = 100 °C
IR
10
µA
ns
Maximum reverse
recovery time
at IF = 1.0 A, VR = 30 V,
trr
200
di/dt = 50 A/µs,
Irr = 10 % IRM
Maximum reverse
recovery time
at IF = 1.0 A, VR = 30 V,
IRM(REC)
2.0
28
A
di/dt = 50 A/µs,
Irr = 10 % IRM
Typical junction
capacitance
at 4.0 V, 1 MHz
CJ
pF
Thermal Characteristics
(TA = 25 °C unless otherwise noted)
Parameter
Typical thermal resistance (1)
Symbol
RθJA
RθJL
GI850
GI851
GI852
GI854
GI856
GI858
Unit
22
8.0
°C/W
Notes:
(1) Thermal resistance from junction to ambient and from junction to lead at 0.375" (9.5 mm) lead length, with both leads equally heat sink
Ratings and Characteristics Curves
(TA = 25 °C unless otherwise noted)
200
100
8.0
6.0
4.0
L = Lead Length
TL = Lead Temperature
8.3 ms Single Half Sine-Wave
Non-Repetitive
TJ = 25 °C
0.8 x 0.8 x 0.40"
(20 x 20 x 1mm)
Copper Heatsinks
L = 0.375" (9.5mm)
Lead Length
TJ = 150 °C
TJ = 25 °C
TA = Ambient Temperature
0.375" (9.5mm) Lead Length
2.0
0
TJ = 150 °C
Repetitive
10
50
30
70
90
Temperature (°C)
Figure 1. Forward Current Derating Curves
110
130
150
170
1
10
100
Number of Cycles at 60 Hz
Figure 2. Maximum Peak Forward Surge Current
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Document Number 88630
10-Oct-05
GI850 thru GI858
Vishay General Semiconductor
100
100
10
1
TJ = 25 °C
f = 1.0 MHz
Vsig = 50mVp-p
TJ = 25 °C
Pulse Width = 300 µs
1% Duty Cycle
0.1
10
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
Reverse Voltage (V)
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
10
TJ = 100°C
1
TJ = 50°C
0.1
TJ = 25°C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Characteristics
Package outline dimensions in inches (millimeters)
DO-201AD
1.0 (25.4)
Min.
0.210 (5.3)
0.190 (4.8)
Dia.
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
Min.
0.052 (1.32)
0.048 (1.22)
Dia.
Document Number 88630
10-Oct-05
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3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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