ILD620GB-X001 [VISHAY]
AC Input-Transistor Output Optocoupler, 2-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC,DIP-8;
| 型号： | ILD620GB-X001 |
| 厂家： | 
VISHAY |
| 描述： | AC Input-Transistor Output Optocoupler, 2-Element, 5300V Isolation, ROHS COMPLIANT, PLASTIC,DIP-8 输入元件 输出元件 光电 |
| 文件： | 总10页 (文件大小：180K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
Optocoupler, Phototransistor Output, AC Input (Dual, Quad
Channel)
Features
• Identical Channel to Channel Footprint
Dual Channel
• ILD620 Crosses to TLP620-2
• ILQ620 Crosses to TLP620-4
• High Collector-Emitter Voltage, BV
• Dual and Quad Packages Feature:
- Reduced Board Space
C
E
A/C
A/C
1
2
3
4
8
7
6
5
= 70 V
CEO
A/C
A/C
C
E
- Lower Pin and Parts Count
- Better Channel to Channel CTR Match
- Improved Common Mode Rejection
• Isolation Test Voltage 5300 V
• Lead-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
RMS
Quad Channel
16
15
1
2
C
E
A/C
A/C
A/C
A/C
3
4
5
6
14
13
12
11
C
E
C
E
C
E
Agency Approvals
• UL1577, File No. E52744 System Code H or J,
Double Protection
A/C
A/C
• CSA 93751
A/C
A/C
7
8
10
9
• DIN EN 60747-5-2 (VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
i179053
Pb
e3
• BSI IEC60950 IEC60065
Pb-free
Description
Order Information
The ILD620/ ILQ620 and ILD620GB/ ILQ620GB are
multi-channel input phototransistor optocouplers that
use inverse parallel GaAs IRLED emitter and high
gain NPN silicon phototransistors per channel. These
devices are constructed using over/under leadframe
optical coupling and double molded insulation result-
Part
Remarks
ILD620
CTR > 50 %, DIP-8
CTR > 100 %, DIP-8
CTR > 50 %, DIP-16
CTR > 100 %, DIP-16
ILD620GB
ILQ620
ILQ620GB
ILD620-X007
ILD620-X009
ILD620GB-X009
ILQ620-X009
ILQ620GB-X009
CTR > 50 %, SMD-8 (option 7)
CTR > 50 %, SMD-8 (option 9)
CTR > 100 %, SMD-8 (option 9)
CTR > 50 %, SMD-16 (option 9)
CTR > 100 %, SMD-16 (option 9)
ing in a withstand test voltage of 5300 V
.
RMS
The LED parameters and the linear CTR characteris-
tics make these devices well suited for AC voltage
detection. the ILD/Q620GB with its low I quaranteed
F
CTR
minimizes power dissipation of the AC volt-
CEsat
age detection network that is placed in series with the
LEDs. Eliminating the phototransistor base connec-
tion provides added electrical noise immunity from the
transients found in many industrial control environ-
ments.
For additional information on the available options refer to
Option Information.
Document Number 83653
Rev. 1.4, 26-Oct-04
www.vishay.com
1
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
Absolute Maximum Ratings
Tamb = 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Parameter
Test condition
Symbol
IF
Value
60
Unit
mA
Forward current
Surge current
IFSM
Pdiss
1.5
100
1.3
A
Power dissipation
Derate linearly from 25 °C
mW
mW/°C
Output
Parameter
Test condition
Symbol
BVCEO
Value
70
Unit
V
Collector-emitter breakdown
voltage
Collector current
IC
IC
50
mA
mA
t < 1.0 sec:
100
150
2.0
Power dissipation
Derate from 25 °C
Pdiss
mW
mW/°C
Coupler
Parameter
Test condition
t = 1.0 sec.
Part
Symbol
VISO
Value
5300
Unit
Isolation test voltage
VRMS
Package dissipation
ILD620
400
400
mW
mW
ILD620GB
Derate from 25 °C
Package dissipation
5.33
500
mW/°C
mW
ILQ620
ILQ620GB
500
mW
Derate from 25 °C
Creepage
6.67
≥ 7.0
≥ 7.0
mW/°C
mm
Clearance
mm
≥ 1012
≥ 1011
Isolation resistance
VIO = 500 V, Tamb = 25 °C
IO = 500 V, Tamb = 100 °C
RIO
RIO
Tstg
Tamb
Tj
Ω
V
Ω
Storage temperature
Operating temperature
Junction temperature
Soldering temperature
- 55 to + 150
- 55 to + 100
100
°C
°C
°C
°C
2.0 mm from case bottom
Tsld
260
www.vishay.com
2
Document Number 83653
Rev. 1.4, 26-Oct-04
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
Electrical Characteristics
Tamb = 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter
Test condition
IF = 10 mA
VR 0.7 V
Symbol
VF
Min
1.0
Typ.
1.15
Max
1.3
Unit
V
Forward voltage
Forward current
Capacitance
=
IF
2.5
25
20
µA
pF
VF = 0 V, f = 1.0 MHz
CO
Thermal resistance, junction to
lead
RTHJL
750
K/W
Output
Parameter
Test condition
Symbol
CCE
Min
Typ.
6.8
Max
Unit
pF
Collector-emitter capacitance
VCE = 5.0 V, f = 1.0 MHz
Collector-emitter leakage
current
V
CE = 24 V
ICEO
10
100
50
nA
TA = 85 °C, VCE = 24 V
ICEO
2.0
µA
Thermal resistance, junction to
lead
RTHJL
500
K/W
Coupler
Parameter
Test condition
Part
Symbol
ICE(OFF)
Min
Typ.
1.0
Max
10
Unit
Off-state collector current
VF = 0.7 V, VCE = 24 V
µA
Collector-emitter saturation
voltage
IF = 8.0 mA, ICE = 2.4 mA
ILD620
VCEsat
0.4
V
ILQ620
VCEsat
VCEsat
VCEsat
0.4
0.4
0.4
V
V
V
IF = 1.0 mA, ICE = 0.2 mA
ILD620GB
ILQ620GB
Current Transfer Ratio
Parameter
Test condition
IF = 5.0 mA, VCE = 5.0 V
CE(IF = - 5.0 mA)/
Part
Symbol
Min
Typ.
Max
Unit
Channel/Channel CTR match
CTR symmetry
CTRX/CTRY 1 to 1
3 to 1
2.0
I
ICE(RATIO)
0.5
ICE(IF = + 5.0 mA)
Current Transfer Ratio
IF = 1.0 mA, VCE = 0.4 V
ILD620
CTRCEsat
60
%
(collector-emitter saturated)
ILQ620
ILD620
CTRCEsat
CTRCE
60
80
%
%
Current Transfer Ratio
(collector-emitter)
IF = 5.0 mA, VCE = 5.0 V
IF = 1.0 mA, VCE = 0.4 V
IF = 5.0 mA, VCE = 5.0 V
50
600
600
ILQ620
CTRCE
50
30
80
%
%
Current Transfer Ratio
(collector-emitter saturated)
ILD620GB
CTRCEsat
ILQ620GB
ILD620GB
CTRCEsat
CTRCE
30
%
%
Current Transfer Ratio
(collector-emitter)
100
200
200
600
600
ILQ620GB
CTRCE
100
%
Document Number 83653
Rev. 1.4, 26-Oct-04
www.vishay.com
3
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
Switching Characteristics
Non-saturated
Parameter
Test condition
IF = 10 mA, VCC = 5.0 V,
RL = 75 Ω, 50 % of VPP
Symbol
ton
Min
Typ.
3.0
Max
Unit
On time
Rise time
Off time
Fall time
µs
IF = 10 mA, VCC = 5.0 V,
tr
toff
20
2.3
2.0
1.1
2.5
µs
µs
µs
µs
µs
RL = 75 Ω, 50 % of VPP
IF = 10 mA, VCC = 5.0 V,
RL = 75 Ω, 50 % of VPP
IF = 10 mA, VCC = 5.0 V,
tf
RL = 75 Ω, 50 % of VPP
Propagation H-L
Propagation L-H
Saturated
IF = 10 mA, VCC = 5.0 V,
tPHL
tPLH
RL = 75 Ω, 50 % of VPP
IF = 10 mA, VCC = 5.0 V,
RL = 75 Ω, 50 % of VPP
Parameter
Test condition
IF = 10 mA, VCC = 5.0 V,
RL = 1.0 KΩ, VTH = 1.5 V
Symbol
ton
Min
Typ.
4.3
Max
Unit
On time
µs
Rise time
IF = 10 mA, VCC = 5.0 V,
tr
toff
2.8
2.5
11
µs
µs
µs
µs
µs
RL = 1.0 KΩ, VTH = 1.5 V
Off time
IF = 10 mA, VCC = 5.0 V,
RL = 1.0 KΩ, VTH = 1.5 V
Fall time
IF = 10 mA, VCC = 5.0 V,
tf
RL = 1.0 KΩ, VTH = 1.5 V
Propagation H-L
Propagation L-H
IF = 10 mA, VCC = 5.0 V,
tPHL
tPLH
2.6
7.2
RL = 1.0 KΩ, VTH = 1.5 V
IF = 10 mA, VCC = 5.0 V,
RL = 1.0 KΩ, VTH = 1.5 V
Typical Characteristics (Tamb = 25 °C unless otherwise specified)
I
= 10 mA
F
F = 10 KHz,
DF = 50%
V
= 5 V
V
CC
= 5 V
CC
R
L
= 1 kΩ
V
O
V
O
RL = 75 Ω
F = 10 KHz,
DF = 50%
I
F
= 10 mA
iild620_01
iild620_02
Figure 1. Non-saturated Switching Timing
Figure 2. Saturated Switching Timing
www.vishay.com
4
Document Number 83653
Rev. 1.4, 26-Oct-04
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
5
10
I
F
4
10
3
10
2
10
t
Vce = 10 V
PLH
1
10
t
PLH
V
O
Typical
0
10
t
S
-1
10
50%
-2
-20
10
0
20
T - Ambient Temperature - °C
A
40
60
80
100
t
F
t
t
D
R
t
t
iild620_06
iild620_03
on
off
Figure 3. Non-saturated Switching Timing
Figure 6. Collector-Emitter Leakage vs. Temperature
120
I
F
100
80
60
t
D
t
R
V
TJ (MAX) = 100 °C
O
40
t
PLH
20
0
V
t
= 1.5 V
TH
t
t
S
F
PHL
iild620 _04
-60 -40 -20
0
20
40 60
80 100
Ta - Ambient Temperature - °C
iild620_07
Figure 4. Saturated Switching Timing
Figure 7. Maximum LED Current vs. Ambient Temperature
60
40
200
150
85 °C
20
25 °C
0
100
–55 °C
-20
-40
-60
50
0
-1.5 -1.0
-0.5
0.0
0.5
1.0
1.5
-60 -40 -20
0
20
40
60
80 100
V
- LED Forward Voltage - V
F
iild620_05
iild620_08
Ta - Ambient Temperature - °C
Figure 5. LED Forward Current vs.Forward Voltage
Figure 8. Maximum LED Power Dissipation
Document Number 83653
Rev. 1.4, 26-Oct-04
www.vishay.com
5
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
100
50
2.0
1.5
1.0
0.5
0.0
Normalized to:
= 10 V, I = 5 mA,
Normalized to
V
CE
F
I
V
= 10 mA
= 5 V
F
CE
ILD/Q620GB
CTRce(sat) V = 0.4 V
CE
10
5.0
2.5
ILD/Q620
NCTRce
1.0
0.5
NCTRce(sat)
T
= 100 °C
A
0.1
.1
1
10
100
1
5
10
20
I
- LED Current - mA
F
Forward Current - I mA
F
iild620_09
iild620_12
Figure 9. Collector Current vs. Diode Forward Current
Figure 12. Normalization Factor for Non-saturated and Saturated
CTR vs. IF
2.0
10000
ˇ
Normalized to:
Duty Factor
V
= 10 V, I = 5 mA,
CE
F
1.5
1.0
0.5
0.0
CTRce(sat) V = 0.4 V
CE
.005
.01
t
1000
100
10
NCTRce
.02
.05
.1
.2
DF = /t
NCTRce(sat)
= 50 °C
.5
T
A
.1
1
10
- LED Current - mA
100
I
F
-6
-5
-4
-3
-2
-1
0
1
10
10
10
10
10
10
10
10
t - LED Pulse Duration - s
iild620_10
iild620_13
Figure 10. Normalization Factor for Non-saturated and Saturated
CTR vs. IF
Figure 13. Peak LED Current vs. Pulse Duration, Tau
2.0
200
150
100
50
Normalized to:
V
= 10 V, I = 5 mA,
CE
F
1.5
1.0
0.5
0.0
CTRce(sat) V = 0.4 V
CE
NCTRce
NCTRce(sat)
= 70 °C
T
A
.1
1
10
- LED Current - mA
100
0
I
F
-60 -40 -20
0
20
40
60
80 100
Ta - Ambient Temperature - °C
iild620_11
iild620_14
Figure 11. Normalization Factor for Non-saturated and Saturated
CTR vs. IF
Figure 14. Maximum Detector Power Dissipation
www.vishay.com
6
Document Number 83653
Rev. 1.4, 26-Oct-04
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
Figure 15. Maximum Collector Current vs. Collector Voltage
1000
100
10
Rth = 500 °C/W
25 °C
50 °C
75 °C
90 °C
1
.1
.1
10
- Collector-Emitter Voltage - V
100
1
V
CE
iild620_15
Package Dimensions in Inches (mm)
pin one ID
4
5
3
6
1
8
2
7
.255 (6.48)
.268 (6.81)
ISO Method A
.379 (9.63)
.390 (9.91)
.030 (0.76)
.045 (1.14)
.300 (7.62)
.031 (0.79)
typ.
4° typ.
.130 (3.30)
.150 (3.81)
.230(5.84)
.250(6.35)
.050 (1.27)
10°
.110 (2.79)
.130 (3.30)
.020 (.51 )
.035 (.89 )
3°–9°
.008 (.20)
.012 (.30)
.018 (.46)
.022 (.56)
.100 (2.54) typ.
i178006
Document Number 83653
Rev. 1.4, 26-Oct-04
www.vishay.com
7
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
Package Dimensions in Inches (mm)
pin one ID
8
7
6
5
4
3
2
1
.255 (6.48)
.265 (6.81)
9
10 11 12 13 14 15 16
ISO Method A
.779 (19.77 )
.790 (20.07)
.300 (7.62)
typ.
.030 (.76)
.045 (1.14)
.031(.79)
.130 (3.30)
.150 (3.81)
.110 (2.79)
.130 (3.30)
.230 (5.84)
.250 (6.35)
10°
typ.
3°–9°
.008 (.20)
.012 (.30)
4°
.020(.51)
.035 (.89)
.018 (.46)
.022 (.56)
.100 (2.54)typ.
.050 (1.27)
i178007
Option 7
Option 9
.300 (7.62)
TYP.
.375 (9.53)
.395 (10.03)
.300 (7.62)
ref.
.028 (0.7)
MIN.
.180 (4.6)
.160 (4.1)
.0040 (.102)
.0098 (.249)
.012 (.30) typ.
.315 (8.0)
MIN.
.020 (.51)
.040 (1.02)
.331 (8.4)
MIN.
15° max.
18494
.315 (8.00)
min.
.406 (10.3)
MAX.
www.vishay.com
8
Document Number 83653
Rev. 1.4, 26-Oct-04
ILD620/ 620GB / ILQ620/ 620GB
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to
1. Meet all present and future national and international statutory requirements.
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use
of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
Document Number 83653
Rev. 1.4, 26-Oct-04
www.vishay.com
9
Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.
Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.
Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000
Revision: 18-Jul-08
www.vishay.com
1
相关型号：
©2020 ICPDF网 联系我们和版权申明