IRF-118+/-10% [VISHAY]

General Fixed Inductor, 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED;
IRF-118+/-10%
型号: IRF-118+/-10%
厂家: VISHAY TELEFUNKEN    VISHAY TELEFUNKEN
描述:

General Fixed Inductor, 1 ELEMENT, 18 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

测试 射频感应器 电感器
文件: 总3页 (文件大小:98K)
下载:  下载PDF数据表文档文件

IRF-12.2+/-10%

General Fixed Inductor, 1 ELEMENT, 2.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, AXIAL LEADED

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0 VISHAY

IRF-12.210%

General Fixed Inductor, 1 ELEMENT, 2.2 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR

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0 VISHAY

IRF120

N-CHANNEL POWER MOSFETS

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983 SAMSUNG

IRF120

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

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599 INTERSIL

IRF120

N-Channel Power MOSFETs, 11 A, 60-100 V

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493 FAIRCHILD

IRF120-123

N-Channel Power MOSFETs, 11 A, 60-100 V

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-
119 FAIRCHILD

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-
926 ETC

IRF120E

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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3 IRF

IRF120EA

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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-
1 IRF

IRF120EB

Power Field-Effect Transistor, 100V, 0.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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-
0 IRF

IRF120PBF

Power Field-Effect Transistor, 9.2A I(D), 100V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA

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-
0 IRF

IRF121

N-Channel Power MOSFETs, 11 A, 60-100 V

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-
177 FAIRCHILD

IRF121

N-CHANNEL POWER MOSFETS

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-
90 SAMSUNG

IRF121

8.0A and 9.2A, 80V and 100V, 0.27 and 0.36 Ohm, N-Channel, Power MOSFETs

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-
84 INTERSIL

IRF122

N-Channel Power MOSFETs, 11 A, 60-100 V

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75 FAIRCHILD